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    • 25. 发明授权
    • Device to shield a magnetic field in a given plane
    • 屏蔽给定平面内的磁场的装置
    • US5757183A
    • 1998-05-26
    • US686905
    • 1996-07-26
    • Neil SmithFrederick John Jeffers
    • Neil SmithFrederick John Jeffers
    • G01R33/02A61B5/055G01R1/18G01R33/00G01R33/09G01R33/421H05K9/00
    • G01R33/00G01R33/09
    • A magnetic field sensing system comprising: a magnetic field shielding structure including a series of N annular rings of inner diameter, a, outer diameter, b, and thickness, t, the series of magnetic rings being geometrically aligned so to be concentric to a common axis of concentricity, the number of rings N being equal to or greater than two, the rings being formed from a high permeability, magnetically soft ferromagnetic material of permeability .mu., and where the rings are physically separated from each other by a series of N-1 spacer layers made from any nonmagnetic material (including in part air), and which function to space the magnetic rings apart by a distance t', and wherein the series of N high permeability magnetic rings and N-1 nonmagnetic spacer layers form stack of length L=Nt+(N-1) t' along the direction parallel to the axis of concentricity; and a magnetic field sensor located within the structure aligned with common axis of concentricity.
    • 一种磁场感测系统,包括:磁场屏蔽结构,其包括一系列内径,a,外径,b和厚度t的N个环形环,所述一系列磁环几何对准,以使其与共同的 同心度轴,环数N等于或大于2,这些环由磁导率μμ的高磁导率,磁软铁磁材料形成,其中环通过一系列N- 1个间隔层由任何非磁性材料(包括部分空气)制成,并且其功能是将磁环间隔开距离t',并且其中N个高磁导率磁环和N-1个非磁性间隔层的一系列形成 长度L = Nt +(N-1)t'沿着平行于同心度轴线的方向; 并且位于结构内的磁场传感器与同心度的共同轴线对齐。
    • 26. 发明授权
    • Low bias current paired magnetoresistive head with misaligned anisotropy
axes
    • 低偏置电流成对磁阻头与不对齐的各向异性轴
    • US5706151A
    • 1998-01-06
    • US760087
    • 1996-12-12
    • Neil Smith
    • Neil Smith
    • G11B5/39
    • G11B5/3954
    • A magnetoresistive head assembly comprising: a paired magnetoresistive head including first and second magnetoresistive elements, and having a first electrically insulating spacer located between the elements; the first and second magnetoresistive elements being of nominally identical thickness, geometry, magnetic and electrical properties, with the exception that easy-axis of uniaxial anisotropy (excluding shape anisotropy) of the first MR element, is oriented at a first, substantially nonzero angle with respect to the geometrically defined longitudinal axis of the MR elements, and is substantially nonparallel to the easy-axis of uniaxial anisotropy (excluding shape anisotropy) of the second MR element, the easy-axis of uniaxial anisotropy of the second MR element being oriented at a second, substantially nonzero angle with respect to the geometrically defined longitudinal axis of the MR elements; means for making electrical contact to, and supplying a parallel bias current of nominally equal amplitude through both of the MR elements; and means for sensing the difference in voltage across the first and second MR elements.
    • 一种磁阻头组件,包括:成对磁阻头,包括第一和第二磁阻元件,并且具有位于元件之间的第一电绝缘垫片; 第一和第二磁阻元件具有名义上相同的厚度,几何形状,磁性和电性质,除了第一MR元件的单轴各向异性(不包括形状各向异性)的容易轴被定向在第一,基本上非零的角度与第一, 相对于MR元件的几何限定的纵向轴线,并且与第二MR元件的单轴各向异性(不包括形状各向异性)的易轴基本上不平行,第二MR元件的单轴各向异性的容易轴被定向在 相对于MR元件的几何限定的纵向轴线的第二,基本上非零的角度; 用于通过两个MR元件进行电接触和提供名义上相等幅度的并联偏置电流的装置; 以及用于感测跨越第一和第二MR元件的电压差的装置。
    • 27. 发明授权
    • Apparatus and method for measurement of magnetic remanence-thickness
product of thin magnetic layers
    • 用于测量薄磁层的磁残余厚度乘积的装置和方法
    • US5629620A
    • 1997-05-13
    • US398197
    • 1995-03-02
    • Frederick J. JeffersNeil Smith
    • Frederick J. JeffersNeil Smith
    • G01N27/72G01R33/09G01R33/12G01N27/76
    • G01R33/1207G01N27/72G01R33/09
    • In the simplest embodiment of the invention, the apparatus holds the edge of the magnetized film to be measured close to, and above, a linearly biased magnetoresistive (MR) element. Magnetic poles appearing at the magnetic discontinuity at the edge of the film generate a magnetic field which is incident on the MR element, and which results in a measurable change in the element's resistivity. In a preferred embodiment, a pair of MR elements are placed so that they are both linearly biased by a magnet; only one of the MR elements being in close proximity to, and influenced by the magnetic field emanating from the edge of the magnetized film. The second MR element, selected for matched characteristics with the first MR element, is located out of the field of the magnetized film, but still subject to the same temperature environment and field noise as the first MR element. The two MR elements are configured with associated resistors as arms of a Wheatstone bridge so that the common mode fields and thermal drift signals experienced by both MR elements are canceled to the first order, and the output of the bridge is proportional to the change in resistance in the first MR element due only to the field of the magnetized film.
    • 在本发明的最简单的实施例中,该装置将被测量的被测磁片的边缘保持在线性偏置的磁阻(MR)元件上方和之上。 出现在膜边缘处的磁性不连续处的磁极产生入射在MR元件上的磁场,并导致元件电阻率的可测量的变化。 在优选实施例中,一对MR元件被放置成使得它们都被磁体线性偏置; 只有一个MR元件紧邻并受到从磁化膜的边缘发出的磁场的影响。 被选择用于与第一MR元件的匹配特性的第二MR元件位于磁化膜的场外,但仍然受到与第一MR元件相同的温度环境和场噪声的影响。 两个MR元件配置有相关联的电阻器作为惠斯通电桥的臂,使得由两个MR元件经受的共模场和热漂移信号被抵消到一阶,并且桥的输出与电阻的变化成比例 在第一MR元件中仅由于磁化膜的场。
    • 28. 发明授权
    • Giant magnetoresistive reproduce head having dual magnetoresistive sensor
    • 具有双磁阻传感器的巨磁阻复制头
    • US5442508A
    • 1995-08-15
    • US248772
    • 1994-05-25
    • Neil Smith
    • Neil Smith
    • G01R33/09G11B5/39H01L43/08H01L43/10G11B5/127
    • G11B5/3954G11B5/3903H01L43/10
    • A giant magnetoresistance-dual magnetoresistance sensor or reproduce head (GMR-DMR) comprising multilayers of alternating magnetic and nonmagnetic thin film layers arranged such that sets of N sandwiched magnetic and nonmagnetic film layers are formed on either side of the center-most, conductive, nonmagnetic or magnetic film layer, whereby the layered structure operates in the fashion of a dual magnetoresistive sensor or reproduce head and exhibits giant magnetoresistance. Preferably the outer-most magnetic layers are of a thickness that differs from the remaining magnetic film layers in order to reduce self-bias level variance between the outermost and innermost magnetic film layers. Sense current flow through the GMR-DMR structure is induced by sensed magnetic fields and generated giant magnetoresistance changes are detected as head output voltage variations.
    • 包括交替磁性和非磁性薄膜层的多层磁阻双重磁阻传感器或再现磁头(GMR-DMR),其布置成使得N个夹层的磁性和非磁性膜层的集合形成在最中心,导电的, 非磁性或磁性膜层,由此层状结构以双磁阻传感器或再现头的方式操作并呈现出巨大的磁阻。 优选地,最外层的磁性层的厚度与剩余的磁性膜层不同,以便减小最外层和最内层的磁性膜层之间的自偏置电平差异。 感测电流流过GMR-DMR结构是由感应磁场引起的,并且产生的巨磁电阻变化被检测为磁头输出电压变化。
    • 29. 发明授权
    • Directly overwrite information by using two radiation beams onto a
single magneto-optical recording
    • 通过在单个磁光记录上使用两个辐射束直接覆盖信息
    • US5381390A
    • 1995-01-10
    • US72262
    • 1993-06-03
    • Charles F. BruckerNeil Smith
    • Charles F. BruckerNeil Smith
    • G11B11/105G11B13/04
    • G11B11/10584G11B11/10519
    • Apparatus is disclosed for the direct overwriting of an optical storage medium having a magneto-optical recording layer. The apparatus includes a condensing lens for focusing radiation from first and second radiation sources on a first and a second region respectively of the recording layer, wherein a region illuminated by the first radiation source is thereafter illuminated by the second radiation source. First and second magnets are provided. The first magnet is proximate the first radiation beam and has a first magnetic pole proximate the first region without contacting the storage medium. The second magnet is proximate the second radiation beam and has a magnetic pole opposite the first magnetic pole proximate the second region. The first magnet and the first radiation beam are selected to provide a first orientation of magnetic domains in the magneto-optical recording layer. The second magnet and the second radiation beam are selected to provide a second orientation of magnetic domains in the storage medium.
    • 公开了用于直接重写具有磁光记录层的光学存储介质的装置。 该装置包括聚光透镜,用于将来自第一和第二辐射源的辐射聚焦在记录层的第一和第二区域上,其中由第一辐射源照亮的区域此后被第二辐射源照射。 提供第一和第二磁体。 第一磁体靠近第一辐射束并且具有靠近第一区域的第一磁极而不接触存储介质。 第二磁体靠近第二辐射束并且具有与第二区域附近的第一磁极相对的磁极。 选择第一磁体和第一辐射束以在磁光记录层中提供磁畴的第一取向。 选择第二磁体和第二辐射束以在存储介质中提供磁畴的第二取向。
    • 30. 发明授权
    • Shielded dual element magnetoresistive reproduce head exhibiting high
density signal amplification
    • 显示高密度信号放大的屏蔽双元件磁阻复制头
    • US5323285A
    • 1994-06-21
    • US902619
    • 1992-06-23
    • Neil Smith
    • Neil Smith
    • G11B5/115G11B5/02G11B5/31G11B5/39G11B5/30
    • G11B5/3954G11B5/3912
    • A shorted dual MR head which is magnetically shielded for the purpose of isolating the dual MR head from extraneous magnetic fields and from long wavelength recorded signals which could cause nonlinear distortion of the dual MR head but not shielded for the purpose of improving linear resolution. The magnetic shields do not significantly affect linear resolution of the dual MR head and can be spaced apart from the dual MR head over a wide range of separation distances limited by factors other than the characteristic bit length of the magnetic signal to be resolved. In one embodiment, at least one shielding element for the dual MR head can be one of the poles or other components of an inductive record head and, together, the two heads can form an integrated thin-film inductive record/MR reproduce head assembly.
    • 用于将双MR磁头与外部磁场和长波长记录信号隔离的短路双MR磁头,其可能导致双MR磁头的非线性失真,而不是为了提高线性分辨率的目的而被屏蔽。 磁屏蔽不会显着影响双MR磁头的线性分辨率,并且可以在由要分辨的磁信号的特征位长度以外的因素限制的宽范围的间隔距离处与双MR磁头间隔开。 在一个实施例中,用于双MR头的至少一个屏蔽元件可以是感应记录头的极或其它部件中的一个,并且两个头一起可以形成集成的薄膜感应记录/ MR再现头组件。