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21. 发明专利

JPS6150348A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6150348A
公开(公告)日：1986-03-12
申请号：JP16185985
申请日：1985-07-24
申请人： Hitachi Ltd
发明人： NITTA TAKEHISA , OGIUE KATSUMI , OTSUKA KANJI , ONISHI SHINJI
IPC分类号： H01L23/02 , H01L23/556
CPC分类号： H01L23/556 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To prevent any erroneous operation due to alpha ray irradiation from happening by a method wherein, after bonding a alpha ray shielding sheet such as silicon and quartz etc. on the surface of active region of semiconductor element, separated individual chips are bonded on a substrate while electrodes are connected to corresponding external conductive means before they are sealed by an insulating cap. CONSTITUTION:A semiconductor chip 14 is bonded on the surface of a ceramics- made insulating base 10 through the intermediary of an adhesive layer 13 and then multiple electrodes are electrically connected to corresponding leads 12 by bonding wires. A alpha ray shielding sheet 17 made of high purity (preferably exceeding 5-9) silicon several 100mum thick including the thickness of another adhesive layer 16 is bonded on the surface of active region of semiconductor chip 14 before or after wire bonding process while a ceramics-made insulating cap 18 is bonded on the base 10 through the intermediary of a low melting point glass layer 19.
摘要翻译：目的：为了防止由于α射线照射而发生的任何错误操作，其中在将半导体元件的有源区的表面上结合了诸如硅和石英等的α射线屏蔽片之后，将分离的单个芯片接合在基板，同时电极在被绝缘盖密封之前连接到相应的外部导电装置。构成：半导体芯片14通过粘合剂层13的中间结合在陶瓷制绝缘基底10的表面上，然后通过接合线将多个电极电连接到相应的引线12。在导线接合工艺之前或之后，在半导体芯片14的有源区域的表面上接合由包括另一粘合剂层16的厚度的多个厚度为100微米的高纯度（优选超过5-9）的硅制成的α-射线屏蔽片17，通过中间的低熔点玻璃层19将绝缘帽18接合在基座10上。

22. 发明专利

JPH06298360A PNEUMATIC TYPE CONVEYANCE DEVICE 失效
公开(公告)号：JPH06298360A
公开(公告)日：1994-10-25
申请号：JP8373293
申请日：1993-04-12
申请人： HITACHI LTD
发明人： NITTA TAKEHISA , SAITO YOSHIO , ITO HIDEFUMI , TANABE YOSHIKAZU
IPC分类号： B65G49/06
摘要： PURPOSE:To prevent dust from adhering to an article to be conveyed and the inside of a conveyance passage at the time of conveyance by making the sectional shape of the conveyance passage meet that of the article to be conveyed, and forming an internal conveyance space into a hollow structure blocked from the outside. CONSTITUTION:A conveyance passage 12 of this pneumatic type conveyance device 10 is constituted of hollow pipes, and a conveyance surface is blocked from the atmosphere. Stream injecting holes 16 are formed in the conveyance surface, and gas is injected from the injecting holes 16 to convey the article to be conveyed on the conveyance surface in a fixed direction and determine the sectional area of a conveyance space 11 in the conveyance passage 12 according to the sectional area of the article to be conveyed. It is thus possible to make the sectional area of the conveyance passage 12 a minimum value necessary for conveyance. As a result, when gas of the identical flow rate is passed, its flow velocity increases relatively. It is thus possible to prevent dust from adhering to the article to be conveyed and the inside of the carrier passage 12 at the time of conveyance.

23. 发明专利

JPH0687531A DELIVERY JIG AND DEVICE 失效
公开(公告)号：JPH0687531A
公开(公告)日：1994-03-29
申请号：JP24035292
申请日：1992-09-09
申请人： HITACHI LTD
发明人： NITTA TAKEHISA , SAITO YOSHIO , TOMIOKA HIDEKI , TANABE YOSHIKAZU
IPC分类号： B65G49/07 , H01L21/677 , H01L21/68
摘要： PURPOSE:To provide a delivery technique enabling the sure prevention of contamination of held material by foreign matter and the like in delivery operation. CONSTITUTION:One face of a plate like base body part 1 is provided with a stepped part 2 and a stepped part 3 recessed into circular arc shape forming concentric circles and into step like cross section, and it is set to that the outer diameter of the inner stepped part 2 is smaller than that of a wafer 4 to be the object of delivery operation and that the outer diameter of the outer stepped part 3 is slightly larger than that of the wafer 4. According to the level of cleanliness of the wafer 4, the wafer 4 is suitably placed in each of the position of the wafer 4 with one end edge 4a side brought into contact with the contact face 3a of the outer stepped part 3 and with the other end edge 4b brought into contact with the contact face 2b of the inner stepped part 2, and the position of the wafer 4 with the end edge 4a brought into contact with the contact face 2a of the inner stepped part 2 and with the end edge 4b side brought into contact with the contact face 3b of the outer stepped part 3.

24. 发明专利

JPS61150924A CONVEYING DEVICE 失效
公开(公告)号：JPS61150924A
公开(公告)日：1986-07-09
申请号：JP24748785
申请日：1985-11-05
申请人： HITACHI LTD , HITACHI KIDEN KOGYO KK
发明人： NITTA TAKEHISA , SAITO YOSHIO , FUKUWATARI ICHIRO , WATANABE SEIJU
IPC分类号： B65G49/00 , B65G54/02 , H01L21/67 , H01L21/677 , H01L21/68
摘要： PURPOSE:To enable to convey loads with accuracy, stability and reliability, in the condition where vibration and dust of the load are restrained, by keeping the carrier pallet sloped to the conveying direction. CONSTITUTION:On the carrier pallet 6 is furnished a reaction plate 6a, on which supporting bars 6b are arranged projecting upward. On the supporting bars 6b is arranged a holding plate 6c with a slope to the conveying direction, over which loads (such as electronic parts or medicinal goods that must be free from dust) are placed. The reaction plate 6a of the pallet 6 is driven as the secondary circuit of the linear motor, by a propelling power received from the primary magnetic flux of the linear motor, to drive the pallet 6 in the direction of the arrow. In this case, the load is, together with the holding plate 6c, conveyed in the position sloped in a given angle constantly, causing to improve stability to the conveying direction, and to reduce vibration of the load coming from inertia of motions and halts of the pallet 6.

25. 发明专利

JPS61101032A Treating equipment 失效
标题翻译：处理设备
公开(公告)号：JPS61101032A
公开(公告)日：1986-05-19
申请号：JP22215884
申请日：1984-10-24
申请人： Hitachi Ltd
发明人： NITTA TAKEHISA , KANEGAE MASAMI , HARA SHOJI , ITO KATSUHIKO
IPC分类号： H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/67023 , H01L21/306
摘要： PURPOSE:To prevent a foreign material from readhering by simultaneously performing an etching and a vapor drying by exposing with mixture vapor of hydrogen fluoride, water and alcohol when removing a thin film on a semiconductor wafer. CONSTITUTION:A storage tank 27 for storing mixture solution 28 is provided in the lower portion of a treating chamber 2. The solution 28 mixes hydrogen fluoride, water and alcohol. The solution 28 is heated by a heater 32 to generate mixture vapor 29. The vapor 28 rises, is cooled by a cooling tube 23, and returned through deflectors 24 to the tank 27. A wafer 1 is put in the vapor 29. A thin film of silicon dioxide on the surface of the wafer 1 is etched. the alcohol is substituted for hexafluoro silicic acid and water on the surface of the wafer to wash the surface.
摘要翻译：目的：通过在半导体晶片上去除薄膜时，通过与氟化氢，水和醇的混合蒸气进行曝光同时进行蚀刻和蒸汽干燥来防止异物再现。构成：在处理室2的下部设置有用于储存混合液28的储存箱27.溶液28混合氟化氢，水和醇。溶液28由加热器32加热以产生混合物蒸汽29.蒸汽28升高，由冷却管23冷却，并通过偏转器24返回到罐27.晶片1放入蒸气29中。薄的蚀刻晶片1表面上的二氧化硅膜。在晶片的表面上用醇代替六氟硅酸和水以洗涤表面。

26. 发明专利

JPS6150349A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6150349A
公开(公告)日：1986-03-12
申请号：JP16186085
申请日：1985-07-24
申请人： Hitachi Ltd
发明人： NITTA TAKEHISA , OGIUE KATSUMI , OTSUKA KANJI , ONISHI SHINJI
IPC分类号： H01L23/02 , H01L23/556
CPC分类号： H01L23/556 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/15153 , H01L2924/15165 , H01L2924/16152 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE:To prevent any erroneous operation due to alpha ray irradiation from happening by a method wherein a semiconductor chip is bonded on a substrate and then multiple electrodes on the chip are connected to corresponding external conductive means simultaneously bonding alpha ray shielding sheet on the surface of active region of semiconductor chip. CONSTITUTION:A semiconductor chip 14 is bonded on the surface of ceramics- made insulating base 10 through the intermediary of an adhesive layer 13 made of Au foil or Au metallized layer while multiple electrodes are electrically connected to corresponding leads 12 by bonding wires. An alpha ray shielding sheet 17 made of high purity (preferably exceeding 5-9) silicon several 100mum thick including the thickness of another adhesive layer 16 made of phosphorus silicide glass or lead glass etc. is bonded on the surface of active region of semiconductor chip 14 before or after wire bonding process while a ceramics-made insulating cap 18 is bonded on the base 10 through the intermediary of a low melting point glass layer 19.
摘要翻译：目的：为了防止由于通过半导体芯片接合在基板上而将芯片上的多个电极连接到相应的外部导电装置的方法发生由于α射线照射引起的任何错误操作，同时将α射线屏蔽片粘合在半导体芯片的有源区。构成：半导体芯片14通过由金箔或Au金属化层制成的粘合剂层13的中间结合在陶瓷制绝缘基底10的表面上，而多个电极通过接合线电连接到相应的引线12。包含由磷化硅玻璃或铅玻璃等制成的另一粘合剂层16的厚度为100μm厚的高纯度（优选为5-9）的硅线屏蔽片17，被接合在半导体芯片的有源区域的表面上在陶瓷制绝缘帽18通过低熔点玻璃层19的中间结合在基底10上之前或之后，进行引线接合处理。

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