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21. 发明专利

JPH07169931A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07169931A
公开(公告)日：1995-07-04
申请号：JP31627193
申请日：1993-12-16
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TSUJI KAZUTAKA , SAMEJIMA KENJI , NAKANO YASUSHI , MAKISHIMA TATSUO , OSHIMA TETSUYA , KUBOTA SETSU , KATO TSUTOMU , MARUYAMA HIROTAKA
IPC分类号： H01L27/146 , H01L31/0264
摘要： PURPOSE:To obtain a good connecting characteristic with a simple constitution and production method by inserting porous semiconductor layers in connecting surfaces between two or more electronic devices, pressing together and electronically connecting the electronic devices. CONSTITUTION:A porous or corpuscular semiconductor layer 105 is formed on a first electronic device part 101 and a first electrode 102 formed on the surface of it. A second electronic device part 103 and a second electrode 104 on the surface of it are formed separately. The first electronic device part 101 and the second electronic device part 103 with the semiconductor layer 105 inserted between them are press adhered with an external pressure and electrically connected. Concerning the connection, when the connecting surfaces of the electronic device parts are rugged, the semiconductor layer 105 absorb the ruggedness of the surfaces by conforming to the form of the ruggedness of the surfaces by the pressure and good and uniform electric contacts are obtained over all area. Therefore when a large electric field is impressed between the electronic devices, concentration of electric field in the connecting surface is prevented.

22. 发明专利

JPH0696688A IMAGE PICKUP TUBE AND OPERATION METHOD THEREFOR 失效
公开(公告)号：JPH0696688A
公开(公告)日：1994-04-08
申请号：JP15178593
申请日：1993-06-23
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA SHIGEHISA , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOSHITSUMI , AIBA MASAAKI , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA YOSHIO , MAKISHIMA TATSUO , SAMEJIMA KENJI , UDA TAKESHI , GOTO NAOHIRO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J29/45 , H01J31/38
摘要： PURPOSE:To provide an image pickup tube having high sensitivity, generating less afterimage and small dark current, and further having sensitivity even for incident light of long wavelength. CONSTITUTION:A photo-conductive film having a blocking type contact is constituted of a light carrier generation layer 86 for absorbing incident light and generating most of light carriers, and an electric charge multiplying layer 84 consisting of an amorphous semiconductor and having the capability of multiplying the generated light carriers. Also, this tube is operated in an electrical field zone where electrical charge is multiplied in the amorphous semiconductor.

23. 发明专利

JPS63233574A OPTOELECTRONIC TRANSDUCER 失效
公开(公告)号：JPS63233574A
公开(公告)日：1988-09-29
申请号：JP6563487
申请日：1987-03-23
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , TSUJI KAZUTAKA , MAKISHIMA TATSUO , HIRAI TADAAKI , ISHIOKA YOSHIO , KAWAMURA TATSURO , SHIDARA KEIICHI , HIRUMA SHIGEHISA , TANIOKA KENKICHI , YAMAZAKI JUNICHI
IPC分类号： H01L31/107 , H01L31/0248 , H01L31/08 , H01L31/10
摘要： PURPOSE:To increase the gain of photoelectric conversion larger than one and to make an optical response characteristic excellent, by causing charge multiplying action in an amorphous semiconductor layer, in which a compound of silicon and carbon including one of a hydrogen or halogen element is a main body, at a part of a photoconductive layer. CONSTITUTION:An electrode 2, whose main body is Cr, is formed on a semi-insulating semiconductor substrate 1. An a-SiN:H film having a thickness of 10 nm is deposited as a hole injection blocking layer 3 on the electrode 2. Then, as a photoconductive layer, an a-Si80C20:H film having a thickness of 0.5-10mum is deposited. Then, as an electron injection blocking layer, a thin silicon oxide film is deposited to a thickness of 8 nm. A transparent electrode 6, whose main body is tin oxide, is formed. An electric field, which causes avalanche multiplication in an amorphous semiconductor layer, is applied. When light is projected from the side of a light transmitting film, the incident light is absorbed in the photoconductive layer including the amorphous semiconductor layer, and electron-hole pairs are generated. Said pairs run in the reverse direction determined by the direction of the applied voltage. Therefore, the thickness of the amorphous layer and the direction of the electric field are set so that the electric field multiplying action occurs effectively when the electric charge having a high ionization rate runs in the amorphous layer under the high electric field within the adopted amorphous material.

24. 发明专利

JPS59149604A Method of producing metal oxide thin film 失效
标题翻译：生产金属氧化物薄膜的方法
公开(公告)号：JPS59149604A
公开(公告)日：1984-08-27
申请号：JP2274583
申请日：1983-02-16
申请人： Hitachi Ltd
发明人： OGAWA HIROBUMI , MAKISHIMA TATSUO , HIRAI TADAAKI
IPC分类号： H01J9/233 , C03C17/245 , C23C14/34 , H01B5/14 , H01B13/00 , H01J29/45

25. 发明专利

JPH1054878A FLUORESCENT DEVICE AND IMAGE PICKUP DEVICE AND INSPECTION DEVICE USING THE FLUORESCENT DEVICE 失效
公开(公告)号：JPH1054878A
公开(公告)日：1998-02-24
申请号：JP11908497
申请日：1997-05-09
申请人： HITACHI LTD
发明人： TAKAGUCHI MASANARI , KAKIBAYASHI HIROSHI , OSHIMA TETSUYA , SAMEJIMA KENJI , MAKISHIMA TATSUO , KANEBORI KEIICHI , SHINADA HIROYUKI
IPC分类号： G01T1/20 , H01J37/22 , H01J40/18
摘要： PROBLEM TO BE SOLVED: To maintain a fluorescent device under a large light emitting quantity condition, a high-resolution condition, and a high-S/N condition by providing electrodes on the electron incident surface and fluorescence radiating surface of a phosphor and applying a voltage across the electrodes, and then, controlling the scattering direction of a charged particle ray to the fluorescence radiating surface. SOLUTION: A transparent electrode 17 is provided and a DC power source 16 is connected between the electrode 17 and a reflecting film 15 which is also used as an electrode so as to apply a voltage across the electrode 17 and film 15. The electrode 17 side is set to a high voltage and the diffusion of an electron beam is prevented by pulling the beam to the incident axis side. The suitable material for forming the electrode 17 includes a tin oxide, indium oxide, titanium oxide., etc. Since the track 13 of the low-energy electron beam which largely affects the deterioration of the resolution and S/N of a fluorescent device is maintained so that the track 13 cannot deviate from the incident axis in a phosphor, the out-of-focus of an image which occurs in the phosphor is reduced and the resolution of the fluorescent device is improved. Namely, the resolution and S/N of the device can be improved even when the applied voltage is low, because the resolution and S/N deteriorating effects of the electron beam become larger as the energy of the beam decreases.

26. 发明专利

JPH08265645A IMAGE INPUT DEVICE 失效
公开(公告)号：JPH08265645A
公开(公告)日：1996-10-11
申请号：JP6554495
申请日：1995-03-24
申请人： HITACHI LTD
发明人： NAKANO YASUSHI , TSUJI KAZUTAKA , MAKISHIMA TATSUO
IPC分类号： H04N5/32 , H04N5/335 , H04N5/353 , H04N5/355 , H04N5/378 , H04N7/18
摘要： PURPOSE: To obtain image information having a wider dynamic range than a dynamic range of a single image pickup element as a signal of an image by synthesizing plural signals obtained under different sensitivity setting conditions with one and same image pickup element. CONSTITUTION: In the image input device, an incident light 101 is converted into an electric signal by an accumulation image pickup element 102 using charge amplification in the inside of a semiconductor such as avalanche phenomenon. The sensitivity of the image pickup element 102 is variable by a sensitivity controller 103. A signal correction device 104 decides an output signal level for each picture element proportional to an incident luminous quantity based on an output of the image pickup element 102 and the sensitivity setting condition of the sensitivity controller 103 and stores it to a frame memory 105. Then signals obtained by picking up an object under different sensitivity setting conditions are synthesized by an image processing circuit 106 to form a video signal by one picture element and the signal is outputted to a monitor 107 and a storage device 108 or the like.

27. 发明专利

JPH06176704A CAMERA DEVICE AND OPERATION METHOD THEREOF 失效
公开(公告)号：JPH06176704A
公开(公告)日：1994-06-24
申请号：JP32291192
申请日：1992-12-02
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： YAMAGISHI TOSHIRO , NANBA MASAKAZU , EGAMI NORIFUMI , TANIOKA KENKICHI , KURASHIGE MITSUHIRO , TSUJI KAZUTAKA , KANEKO YOSHIYUKI , MAKISHIMA TATSUO , NAGATSUMA KAZUYUKI , OSHIMA TETSUYA , NAKANO YASUSHI
IPC分类号： H01J29/04 , H01J29/45 , H01J31/26 , H01J31/38 , H04N5/225 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/378 , H01J1/30 , H01J31/28
摘要： PURPOSE:To provide a camera device of low after-image and low noise, which is this and suited for making large area, in a camera device for reading out with an electron beam the distribution of a signal electric charge amount generated and accumulated in a photoconductive film by incident light. CONSTITUTION:A photoconductive target comprising a translucent electrode 102 and a photoconductive film 103 on a translucent base board 101 is arranged opposite to an electron emission surface comprising integrated plural electron sources 106 and gate electrodes 104, and the plural electron sources for radiating an electron beam to the photoconductive target is timewise switched over by an electron source selection circuit 107 and a gate selection circuit 108. Thereby, a signal electric charge amount generated and stored in a photoconductive film is read out to generate a time series electric signal corresponding to the spatial distribution of incident light.

28. 发明专利

JPH0530433A IMAGE PICKUP DEVICE 失效
公开(公告)号：JPH0530433A
公开(公告)日：1993-02-05
申请号：JP17802191
申请日：1991-07-18
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TSUJI KAZUTAKA , MAKISHIMA TATSUO , OSHIMA TETSUYA , HIRAI TADAAKI , KUBOTA SETSU , TANIOKA KENKICHI , SHIDARA KEIICHI
IPC分类号： H01J31/26 , H04N5/335 , H04N5/355 , H04N5/369 , H04N5/374
摘要： PURPOSE:To take sufficient gradation of a bright part and to widen the dynamic range by forming a video signal by one field period from a signal read or integrated or added for one field period. CONSTITUTION:A signal charge generated in a light receiving section of a photoelectric conversion section 1 is stored to a storage capacitor for a prescribed period in response to an external incident luminous quantity and the signal charge stored for each picture element is read sequentially by a read out scanning section 3 to generate a time series electric signal corresponding to the spatial distribution of the incident luminous quantity. In this case, at least part of the signal charge stored in the storage capacitor is read to the outside of the storage capacitor for twice or over within one field period of the video output signal and the signal read for one field period is integrated or added to generate the video signal for one field period. Thus, the deterioration in the effective sensitivity is suppressed and even when the incident luminous quantity is increased, the luminous quantity dependency of the output signal is not weaken. Thus, the gradation of the bright part is taken sufficiently to widen the dynamic range.

29. 发明专利

JPH0360297A IMAGE PICKUP DEVICE AND ITS OPERATING METHOD 失效
公开(公告)号：JPH0360297A
公开(公告)日：1991-03-15
申请号：JP19411689
申请日：1989-07-28
申请人： HITACHI LTD
发明人： MAKISHIMA TATSUO , TSUJI KAZUTAKA , HIRAI TADAAKI
IPC分类号： H01J31/38 , H01J31/50 , H04N9/07
摘要： PURPOSE:To reproduce an incident optical image on a photoconductive face wholly with fidelity by varying an electron beam on-period and an electron beam off-period in one field in time series so as to set a scanning area concentrical to the photoconductive film. CONSTITUTION:The device consists of an object 1, a lens 2, a convergence deflection coil 3, an image pickup tube 4, a signal amplifier circuit 5, a convergence deflection circuit 6, a power supply circuit 7, an electron beam control circuit 8, a video monitor 9, a photoconductive film 10 and an electron beam 11. Then the deflection angle of the scanning electron beam 11 is increased more than that of a conventional device and the blanking period of the electron beam 11 is varied sequentially for each horizontal scanning period to expand the effective scanning area of the electron beam 11 to the entire area of the circular photoconductive film 11. Thus, the incident optical image formed to the entire area of the circular photoconductive film 10 is read as a video signal with fidelity.

30. 发明专利

JPS63174245A IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPS63174245A
公开(公告)日：1988-07-18
申请号：JP486987
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： ISHIOKA YOSHIO , TAKASAKI YUKIO , TSUJI KAZUTAKA , MAKISHIMA TATSUO , YAMASHITA TAKASHI , KAWAMURA TATSURO , TANIOKA KENKICHI , AIBA MASAAKI
IPC分类号： H01J29/45
摘要： PURPOSE:To obtain the low afterimage and high resolution and improve sensitivity by applying the electric field multiplying charges in a semiconductor layer to a photoconductive target having a blocking type structure and operating it at the preset temperature or below. CONSTITUTION:The electric field is applied to a pickup tube target having a translucent substrate 1, a transparent conductive film 2, an amorphous Se photoconductive layer 4, and an electron injection blocking layer 5 as basic portions with a preset signal current. Under this condition, when the light is radiated from the glass substrate side, most of the incident light is absorbed mainly by the transparent electrode side of the amorphous Se layer to generate a pair of electrons and positive holes. Among them, electrons run to the transparent electrode side, and posive holes run to the electron injection blocking layer through the amorphous Se layer. Therefore, a charge multiplying action occurs when the positive holes run through the amorphous Se layer in the high electric field, if the amorphous is made thick enough to get the desired characteristic, electric charges are multiplied, and high sensitivity having a gain larger than 1 can be obtained, with the low-afterimage property of a blocking type target maintained. Furthermore, if the temperature of the target is made 40 deg.C or below, highlight burning is quickly eliminated, and a good image can be obtained.

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