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21. 发明专利

JPS63261745A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63261745A
公开(公告)日：1988-10-28
申请号：JP9513587
申请日：1987-04-20
申请人： HITACHI LTD
发明人： WADA YASUO , YADORI SHOJI , MURAKAMI HIDEKAZU , AOKI MASAAKI , YANO KAZUO , HONJO SHIGERU
IPC分类号： H01L29/41 , H01L21/28 , H01L29/43 , H01L29/47 , H01L29/78 , H01L29/861 , H01L29/872 , H01L39/00 , H01L39/02 , H01L39/22
摘要： PURPOSE:To make it possible to greatly improve the characteristics of the semiconduc tor device by setting a value adequate for the impurity concentration in a superconduc tor within the semiconductor and a semiconductor interface section, operating at temperature less than a critical one Tc of the superconductive materials and reducing a resistance to a great extent in case of bringing the superconductor into contact with the semiconductor. CONSTITUTION:By making use of the superconductive materials for MOSFET or gate 2 of MOSIC, source 3, drain 4 and wiring 5, from MOS capacity to gate 6, etc., formed onto an Si substrate 1 and cooling down to a temperature less than a critical one Tc, any signal delay caused by wiring and a resistance of the conductor section can be eliminated, so that the performances are determined by an intrinsic characteris tic of the MOSFET alone. In order to make a contact resistance value less than 10 OMEGA/cm of a practical one, it is necessary to make an impurity concentration more than approx. 4X10 cm irrespectively of n-type and p-type. Also, in case of a Shottkey coupling of the superconductor with the semiconductor, a fine coupling characteristic is shown at the interface impurity concentration less than 6X10 cm thereof, and in case a concentration is in excess of this one, it is not suitable for use specially because of deterioration of a reverse direction characteristic.

22. 发明专利

JPS62245661A SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS62245661A
公开(公告)日：1987-10-26
申请号：JP8828386
申请日：1986-04-18
申请人： HITACHI LTD
发明人： ISHIBASHI KOICHIRO , MINATO OSAMU , MASUHARA TOSHIAKI , SAKAI YOSHIO , YAMANAKA TOSHIAKI , HASHIMOTO NAOTAKA , HANAMURA SHOJI , MORIWAKI NOBUYUKI , HONJO SHIGERU , UEDA KIYOTSUGU
IPC分类号： G11C11/403 , H01L21/8234 , H01L21/8244 , H01L27/088 , H01L27/10 , H01L27/11 , H01L29/45 , H01L29/78
摘要： PURPOSE:To reduce the area of a memory chip by a method wherein the source of each driving MOSFET is connected to the conductive layer different from the gates of a transmission MOSFET and a driving MOSFET, and an earthing wiring is formed using said layer. CONSTITUTION:The common diffusion layers 31 and 32 of two driving MOSFETs are connected to a poly Si layer 35 through the intermediary of contact holes 33 and 34, and an earthing wiring is conducted using said layer 35. In this case, gate electrodes 18A, 18B, 18E, 18F 19A, 19D, 19E and 19G are formed in the structure v/herein they are bent in the midway of them for the purpose of providing holes 33 and 34 on the layers 31 and 32. According to this constitution, as it is unnecessary to provide the diffusion layer, to be turned to the source of the driving MOSFET, between the electrodes 18A and 18B and also between the electrodes 19D and 19E, the interval between the electrodes 18A and 18B and the electrodes 19D and 19E can be reduced to the limit of processing measurements. The area of a memory cell can also be reduced in this constitution.

23. 发明专利

JPS62174968A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62174968A
公开(公告)日：1987-07-31
申请号：JP1562686
申请日：1986-01-29
申请人： HITACHI LTD
发明人： YAMANAKA TOSHIAKI , SAKAI YOSHIO , IIJIMA SHINPEI , MINATO OSAMU , HONJO SHIGERU
IPC分类号： H01L27/11 , G11C11/41 , H01L21/8244 , H01L27/10 , H01L27/102
摘要： PURPOSE:To obtain a semiconductor device which is easy to manufacture, occupies a small area and includes a loading element with a high resistance value, by connecting a thin polycrystalline silicon layer for providing a high resistance section on the top of a thicker polycrystalline silicon layer for providing electrical connections so as to provide a load resistance for a memory cell. CONSTITUTION:A first layer of polycrystalline silicon films 3 and 3' is formed as a low resistance layer on a silicon oxide films 2 formed on a silicon substrate 1. Further, a thinner second layer of polycrystalline silicon film 4 is formed such that the ends thereof are directly contacted with the underlying first layer of polycrystalline silicone film 3. According to such construction, the thinner second layer having no impurity added provides a high resistance section and the thicker first layer provides electrical connections connected to a metal electrode. If any thermal treatment is conducted during the manufacturing processes thereafter, an impurity such as arsenic or the like from the first layer of polycrystalline silicon films 3 and 3' is redistributed in the contacts and electrical connection is created there. Accordingly, a static MOS memory cell having a high-resistance element occupying a smaller area and suitable for a high degree of integration can be manufactured easily and with high yield.

24. 发明专利

JPS61129798A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：JPS61129798A
公开(公告)日：1986-06-17
申请号：JP24955284
申请日：1984-11-28
申请人： Hitachi Ltd
发明人： MINATO OSAMU , MASUHARA TOSHIAKI , SHIMOHIGASHI KATSUHIRO , HANAMURA SHOJI , HONJO SHIGERU
IPC分类号： G11C11/405 , G11C11/34
摘要： PURPOSE: To obtain a low electric power able to back up the battery by using a dynamic type memory cell composed of four MOSTs and making a memory cell into a static cell.
CONSTITUTION: When a memory cell is composed of four MOST1W4, a word line goes to be a high level, and then, an electric current flows from a data line through an electric potential node, and therefore, a load transistor is connected to a data line, and when the transistor is in the conducting condition, a DC electric current flows from an electric power source to a memory cell DC, a large quantity of an electric power will be consumed, and therefore, a load transistor connected to the data line is desirable to be in the non- couducting condition as much as possible while the work line is in a high level and the memory cell is selected. Then, after the precharging is executed to a high electric potential beforehand, a load MOST of the data line is made into a non-conducting condition, a charge is supplied from a pair of the data lines to a high electric potential node, the information written to a memory device is reproduced, the electric potential difference between data lines is made smaller and the power consumption spent for precharging is made smaller.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过使用由四个MOST组成的动态型存储单元并使存储单元进入静态单元，获得能够备份电池的低电力。构成：当存储单元由四个MOST1-4组成时，字线变为高电平，然后电流从数据线流过电位节点，因此负载晶体管连接到数据线，当晶体管处于导通状态时，DC电流从电源流向存储单元DC，大量的电力将被消耗，因此连接到晶体管的负载晶体管在工作线处于高电平并且选择存储器单元的情况下，数据线要尽可能地处于非产品状态。然后，预先在高电位执行预充电之后，使数据线的负载MOST成为不导通状态，从一对数据线向高电位节点提供电荷，信息写入到存储装置的数据线的电位差越小，预充电所花费的功耗就越小。

25. 发明专利

JP2006138755A Dangerous material detector and dangerous material detecting method 审中-公开
标题翻译：危险材料检测和危险材料检测方法
公开(公告)号：JP2006138755A
公开(公告)日：2006-06-01
申请号：JP2004328995
申请日：2004-11-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NISHIHIRA TAKESHI , KATAKURA KAGEYOSHI , HONJO SHIGERU
IPC分类号： G01N27/62
CPC分类号： G01N1/2273 , G01N2001/022 , H01J49/0036
摘要： PROBLEM TO BE SOLVED: To accurately identify an objective material to be detected and a non-objective material that is not to be detected, to suppress the possibility of incorrect determination, and to improve detection performance of the objective material to be detected, in a device for detecting dangerous material such as explosive substances and prohibited chemicals by mass analysis in a short time at an airport.
SOLUTION: Standard mass chromatogram indicated by the objective material to be detected is prepared as a database in the device. Measuring mass chromatogram obtained by measuring and the standard mass chromatogram in the database are normalized and then compared with each other, and it is determined whether the objective material is detected using the coincidence. Two ions are selected from a plurality of ions originated from the objective material to be detected, the correlation seen between mass chromatograms of two selected ions is compared with the correlation seen between mass chromatograms of two selected ions in the database, and it is determined whether the objective material is detected using the consistency.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了准确地识别待检测的目标材料和不被检测的非物质材料，以抑制不正确确定的可能性，并且提高要检测的物质的检测性能用于在机场短时间内通过质量分析检测危险物质如爆炸物质和禁用化学品的装置。
解决方案：由待检测的目标材料指示的标准质量色谱图作为设备中的数据库进行准备。通过测量获得的质量色谱图和数据库中的标准质量色谱图进行归一化，然后进行比较，并确定是否使用重合检测到目标材料。从要检测的目标物质的多个离子中选择两个离子，将两个选定离子的质谱图之间的相关性与数据库中两个选定离子的质谱图之间的相关性进行比较，并确定是否使用一致性检测目标物质。版权所有（C）2006，JPO＆NCIPI

26. 发明专利

JP2005353340A Mass spectrometer 审中-公开
标题翻译：质谱仪
公开(公告)号：JP2005353340A
公开(公告)日：2005-12-22
申请号：JP2004170807
申请日：2004-06-09
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HONJO SHIGERU , HOSODA SHIGERU , NOJIRI TATSUO
IPC分类号： G01N27/62 , H01J49/04 , H01J49/26
摘要： PROBLEM TO BE SOLVED: To provide a mass spectrometer preventing lowering of detection rate occurring in conventional devices and analyzing respective substances to be detected in proper condition. SOLUTION: The mass spectrometer is constructed so as to analyze the substance to be detected by providing a single sample guiding part 1 for guiding and evaporating the sample, a plurality of ion sources 3, 6 for generating specific ions at every substances contained in the vapor of the sample supplied from the single sample guiding part, and mass analyzing parts 5, 8 performing the mass spectrometry, arranged so as to correspond to respective ion sources. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种防止传统装置中发生的检测率降低的质谱仪，并在适当的条件下分析待检测的各种物质。解决方案：质谱仪被构造成通过提供用于引导和蒸发样品的单个样品引导部分1来分析待检测的物质，用于在每个含有的物质产生特定离子的多个离子源4,6 在从单个样品引导部供给的样品的蒸气中以及进行质谱分析的质量分析部件5,8配置成对应于各离子源。版权所有（C）2006，JPO＆NCIPI

27. 发明专利

JP2004158296A Detection device and detection method of chemical agent 有权
公开(公告)号：JP2004158296A
公开(公告)日：2004-06-03
申请号：JP2002322680
申请日：2002-11-06
申请人： Hitachi Ltd , National Research Institute Of Police Science Japan , 株式会社日立製作所 , 警察庁科学警察研究所長
发明人： HONJO SHIGERU , TAKADA YASUAKI , NAGANO HISASHI , FUKANO MASUMI , SETO YASUO , ITOI TERUO , IURA KAZUMITSU , KATAOKA MIEKO , TSUGE KOICHIRO
IPC分类号： G01N27/62 , G01N27/64 , G01N27/68 , H01J49/04 , H01J49/10 , H01J49/42
CPC分类号： G01N27/622
摘要： PROBLEM TO BE SOLVED: To obtain a detection device and a detection method of a chemical agent suitable for using for detection of sarin, soman or the like, wherein specifications are provided such as speed to detect the chemical agent, reduction of a misinformation rate, squeezing of kinds of the chemical agent, and an unmanned continuous monitoring device.
SOLUTION: This detection device is constituted of a sample introduction part 1 to take in and heat a sample, an ionization part 2 to ionize the sample from the sample introduction part 1, a mass spectrometric part 3, and a computer 6 to analyze data. When a prescribed signal specific to sarin and soman is recognized by the computer 6, it becomes possible to identify that sample.
COPYRIGHT: (C)2004,JPO

28. 发明专利

JP2000323642A COMPACT ELECTRONIC EQUIPMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000323642A
公开(公告)日：2000-11-24
申请号：JP13081699
申请日：1999-05-12
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： SHIMOISHI TOMOAKI , NAKAJIMA HIROSHI , HONJO SHIGERU
IPC分类号： H01L25/00
摘要： PROBLEM TO BE SOLVED: To prevent chip cracks at the time compact electronic equipment is dropped. SOLUTION: This compact electronic equipment is constituted of a mounted board 13 on which a TCP 4 having a memory chip 1 is mounted, a front case 11 arranged so as to face the mounted substrate 13 for covering the TCP 4 at the surface side of the mounted substrate 13, a back case 12 arranged so as to face the mounted substrate 13 for covering the TCP 4 at the back side of the mounted substrate 13, a connector member 14 electrically connected with a land for a connector of the mounted substrate 13, a chip capacitor 15 of a chip protecting member arranged around the TCP 4 between the front case 11 and the mounted substrate 13 and between the back case 12 and the mounted substrate 13, and formed so as to be longer than a distance between the back face of the memory chip 1 of the TCP 4 in the uppermost layer and the mounted substrate 13 in the height direction of the TCP 4, and insulating film members 11c and 12c. Thus, the chip crack at the time of drop of a compact memory card 10 can be prevented.

29. 发明专利

JPH08274253A MODULE WIRING BOARD AND MEMORY MODULE CONSTITUTED BY USING THE BOARD 失效
公开(公告)号：JPH08274253A
公开(公告)日：1996-10-18
申请号：JP7342295
申请日：1995-03-30
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KANNO TOSHIO , TSUKUI SEIICHIRO , CHIKADA TOMOSHI , HONJO SHIGERU , SASAKI TOSHIO
IPC分类号： H01L25/10 , H01L25/18 , H01L27/10 , H05K3/22
摘要： PURPOSE: To accomplish the same efficiency as in the module using a semiconductor device of a perfect article, without generation of access delay using a semiconductor device of incomplete article. CONSTITUTION: On lands 3a to 3d and 4a to 4d on which memory I/O pins are mounted, the lands 3a, 3c, 3d, 4a to 4c on the positions where two each of them are mounted from the end part of a module board 2, are connected to a module I/O terminal 5, the lands 3c and 4d are connected to a land 7, and a land 7a is connected to power source voltage. Other lands 3a, 3c, 3d and 4a to 4c are connected to the module I/O terminal 5, and the lands 3c and 4d are connected to a land 8a. When the lands 3c and 4a are pulled up, a resistor is mounted on lands 8a and 8b, a jumper is mounted on lands 8 and 8a for connection of the lands 3c and 4d to the module I/O terminal 5, and the defective I/O pin only is selectively brought into an electrically fixed state by changing the mounting lands 3 and 4, and also by mounting and dismounting the resistor or the jumper.

30. 发明专利

JPH0778948A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0778948A
公开(公告)日：1995-03-20
申请号：JP17380793
申请日：1993-06-21
申请人： HITACHI LTD
发明人： HONJO SHIGERU , KITANO JUN , TSUNOSAKI MANABU , YANAGISAWA KAZUMASA , YAMAMURA MASAHIRO
IPC分类号： H01L27/118 , H01L21/82
摘要： PURPOSE:To efficiently and accurately test the performance, of in-built logic part and memory part by providing the logic part which selectively forms an input signal and an external output signal and a test signal selecting circuit which selects the input signal and outputs the signal front an external terminal. CONSTITUTION:A semiconductor device is provided with the memory part of a random access memory RAM. A logic part LC1 is also provided so as to form a memory enable signal (me), which becomes a start control signal for a memory part after receiving external input signals DI0-DIj, a light enable signal (we), an output enable signal (oe), an address signal a0-aF and the input signal of writing data w0-w7. A logical part LC2 which forms the external output signal after receiving the output signals r0-r7 from the memory part is provided. The device is provided with a test signal selecting circuit TSSL which transmits an input signal or an output signal of the memory part to the logical part LC2 on the output side following test selecting signals TS0-TS4 and outputs the signal from the external terminals DO0-DOk.

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