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21. 发明授权

US09243328B2 Susceptor with roll-formed surface and method for making same 有权
标题翻译：具有辊形表面的受体和制造它的方法
公开(公告)号：US09243328B2
公开(公告)日：2016-01-26
申请号：US12407766
申请日：2009-03-19
申请人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
发明人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
IPC分类号： B01J19/08 , C23C16/458
CPC分类号： C23C16/4581
摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.
摘要翻译：本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

22. 发明申请

US20080190886A1 DIFFERENTIAL ETCH RATE CONTROL OF LAYERS DEPOSITED BY CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过化学蒸气沉积沉积的层的差异蚀刻速率控制
公开(公告)号：US20080190886A1
公开(公告)日：2008-08-14
申请号：US12027964
申请日：2008-02-07
申请人： Soo Young Choi , Gaku Furuta
发明人： Soo Young Choi , Gaku Furuta
IPC分类号： C23F1/00
CPC分类号： H01L21/31116 , C03C17/34 , C03C2218/33 , C23C16/308 , C23C16/345 , C23C16/401 , H01L21/31111
摘要： A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
摘要翻译：提供了一种方法和装置，用于通过在相同或不同的处理室中沉积差分蚀刻速率的第一和第二材料层来控制多层堆叠的蚀刻轮廓。在本发明的一个实施例中，提供了一种用于蚀刻衬底材料的方法，包括：以第一流速从含氮前体沉积具有第一蚀刻速率的第一含硅材料层，并在第一流速下沉积含硅前体在第一含硅材料层上以不同于第一流速的第二流量从含氮前体沉积具有与第一蚀刻速率不同的第二蚀刻速率的第二含硅材料层，蚀刻第一含硅材料层和第二含硅材料层，并在第一含硅材料层和第二含硅材料层中形成锥形蚀刻轮廓。

23. 发明申请

US20110146577A1 SHOWERHEAD WITH INSULATED CORNER REGIONS 审中-公开
标题翻译：具有绝缘角区域的淋浴
公开(公告)号：US20110146577A1
公开(公告)日：2011-06-23
申请号：US12975708
申请日：2010-12-22
申请人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
发明人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/458 , C23C16/50 , B05B1/14
CPC分类号： C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32174 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer.
摘要翻译：本发明的实施方案一般涉及具有绝缘拐角区域以减少电弧放电并改善沉积均匀性控制的气体分配喷头。在一个实施例中，气体分配喷头由导电材料形成，其中去除了角部区域的材料。基本上形成角部区域的去除部分形状的角部件被附接到导电花洒。角部件可以由具有电绝缘性的材料制成，例如陶瓷或绝缘聚合物。

24. 发明申请

US20100196626A1 GROUND RETURN FOR PLASMA PROCESSES 有权
标题翻译：等离子体工艺的接地返回
公开(公告)号：US20100196626A1
公开(公告)日：2010-08-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

25. 发明申请

US20090238734A1 SUSCEPTOR WITH ROLL-FORMED SURFACE AND METHOD FOR MAKING SAME 有权
标题翻译：具有辊形表面的SUSCEPTOR及其制造方法
公开(公告)号：US20090238734A1
公开(公告)日：2009-09-24
申请号：US12407766
申请日：2009-03-19
申请人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
发明人： Gaku Furuta , David Atchley , Soo Young Choi , John M. White
IPC分类号： B01J19/08 , B21B23/00
CPC分类号： C23C16/4581
摘要： The present invention generally provides apparatus for supporting a large area substrate in a plasma reactor. One embodiment, a substrate support for using in a plasma reactor includes an electrically conductive body has a top surface with a plurality of roll-formed indents.
摘要翻译：本发明通常提供用于在等离子体反应器中支撑大面积基板的装置。一个实施例中，用于在等离子体反应器中使用的衬底支撑件包括导电体，其具有具有多个辊形凹口的顶表面。

26. 发明授权

US07988875B2 Differential etch rate control of layers deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的层的差分蚀刻速率控制
公开(公告)号：US07988875B2
公开(公告)日：2011-08-02
申请号：US12027964
申请日：2008-02-07
申请人： Soo Young Choi , Gaku Furuta
发明人： Soo Young Choi , Gaku Furuta
IPC分类号： C23F3/00
CPC分类号： H01L21/31116 , C03C17/34 , C03C2218/33 , C23C16/308 , C23C16/345 , C23C16/401 , H01L21/31111
摘要： A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
摘要翻译：提供了一种方法和装置，用于通过在相同或不同的处理室中沉积差分蚀刻速率的第一和第二材料层来控制多层堆叠的蚀刻轮廓。在本发明的一个实施例中，提供了一种用于蚀刻衬底材料的方法，包括：以第一流速从含氮前体沉积具有第一蚀刻速率的第一含硅材料层，并在第一流速下沉积含硅前体在第一含硅材料层上以不同于第一流速的第二流量从含氮前体沉积具有与第一蚀刻速率不同的第二蚀刻速率的第二含硅材料层，蚀刻第一含硅材料层和第二含硅材料层，并在第一含硅材料层和第二含硅材料层中形成锥形蚀刻轮廓。

27. 发明申请

US20090197015A1 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：US20090197015A1
公开(公告)日：2009-08-06
申请号：US12344210
申请日：2008-12-24
申请人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： C23C16/513
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
摘要翻译：系统，方法和装置包括用于在基板上沉积膜的等离子体处理室。等离子体处理室包括具有接地板，背板和存在于接地板和背板之间的不均匀性的盖组件。不均匀性可能会干扰RF波均匀性，并导致接地板和背板的部分之间的阻抗不平衡。不均匀性可以包括非均匀表面的结构或减小的间隔。存在不均匀表面的减小的间隔，其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。该结构可以是2cm至10cm厚，覆盖背板的20％至50％，并且位于远离存在于腔室内的不连续处。

28. 外观设计

USD713200S1 Susceptor with heater 有权
公开(公告)号：USD713200S1
公开(公告)日：2014-09-16
申请号：US29430967
申请日：2012-08-31
申请人： Gaku Furuta , John M. White , Robin L. Tiner , Suhail Anwar , Soo Young Choi
设计人： Gaku Furuta , John M. White , Robin L. Tiner , Suhail Anwar , Soo Young Choi

29. 外观设计

USD680946S1 Gas flow diffuser faceplate 有权
标题翻译：气流扩散面板
公开(公告)号：USD680946S1
公开(公告)日：2013-04-30
申请号：US29353504
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

30. 外观设计

USD669032S1 Flow blocking shadow frame support 有权
标题翻译：流阻挡影框支持
公开(公告)号：USD669032S1
公开(公告)日：2012-10-16
申请号：US29353503
申请日：2010-01-09
申请人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
设计人： Suhail Anwar , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner

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