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21. 发明授权

US07706181B2 Multi-bit programming device and method using single-bit memory cells 有权
标题翻译：多位编程设备和使用单位存储单元的方法
公开(公告)号：US07706181B2
公开(公告)日：2010-04-27
申请号：US11896349
申请日：2007-08-31
申请人： Sung-Jae Byun , Dong Hyuk Chae , Kyoung Lae Cho , Jun Jin Kong , Young Hwan Lee , Seung Jae Lee , Nam Phil Jo , Dong Ku Kang
发明人： Sung-Jae Byun , Dong Hyuk Chae , Kyoung Lae Cho , Jun Jin Kong , Young Hwan Lee , Seung Jae Lee , Nam Phil Jo , Dong Ku Kang
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C11/5628 , G11C2211/5621 , G11C2211/5641
摘要： A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.
摘要翻译：提供了一种用于非易失性存储器的多位编程设备和方法。在一个示例实施例中，多位编程设备可以包括多位编程单元，其被配置为将原始多位数据多位地编程到存储单元阵列中的目标存储器单元，以及备份编程单元，被配置为选择备份相对于原始多位数据的每个位存储单元阵列中的存储器单元，以及将原始多位数据的每个位编程到所选择的备份存储器单元中的相应一个。

22. 发明授权

US07495968B2 Wired-or typed page buffer having cache function in a nonvolatile memory device and related method of programming 有权
标题翻译：在非易失性存储器件中具有高速缓存功能的有线或类型页面缓冲器和相关编程方法
公开(公告)号：US07495968B2
公开(公告)日：2009-02-24
申请号：US11317079
申请日：2005-12-27
申请人： Sung Soo Lee , Min Su Kim , Seung Jae Lee
发明人： Sung Soo Lee , Min Su Kim , Seung Jae Lee
IPC分类号： G11C7/10
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/24 , G11C16/3454
摘要： Disclosed is a page buffer having a wired-OR type structure and a cache function which is adapted for use in a nonvolatile semiconductor memory device and a method of programming same. The page buffer embeds the cache latch block in relation to the cache function. Moreover, the nonvolatile semiconductor memory device includes an output driver enabling an internal output line to be unidirectional driven, thereby enabling a program-verifying operation using the wired-OR scheme.
摘要翻译：公开了一种适用于非易失性半导体存储器件的线或OR型结构和高速缓存功能的页缓冲器及其编程方法。页面缓冲区相对于缓存功能嵌入高速缓存锁存块。此外，非易失性半导体存储器件包括能够使内部输出线单向驱动的输出驱动器，从而能够进行使用有线方案的程序验证操作。

23. 发明申请

US20080285340A1 Apparatus for reading data and method using the same 有权
标题翻译：用于读取数据的装置和使用该装置的方法
公开(公告)号：US20080285340A1
公开(公告)日：2008-11-20
申请号：US12007921
申请日：2008-01-17
申请人： Seung-Hwan Song , Jun Jin Kong , Sung Chung Park , Dong Hyuk Chae , Seung Jae Lee , Dong Ku Kang
发明人： Seung-Hwan Song , Jun Jin Kong , Sung Chung Park , Dong Hyuk Chae , Seung Jae Lee , Dong Ku Kang
IPC分类号： G11C16/06 , G11C7/02
CPC分类号： G11C16/26 , G11C7/1006 , G11C11/5642
摘要： Disclosed are an apparatus and a method for reading data. The method for reading data according to example embodiments includes comparing a threshold voltage of a memory cell with a first boundary voltage, comparing the threshold voltage with a second boundary voltage having a higher voltage level than that of the first boundary voltage, and determining data of the memory cell based on the threshold voltage, the first boundary voltage, and the second boundary voltage.
摘要翻译：公开了一种用于读取数据的装置和方法。根据示例实施例的用于读取数据的方法包括将存储器单元的阈值电压与第一边界电压进行比较，将阈值电压与具有比第一边界电压的电压电平更高的电压电平的第二边界电压进行比较，以及确定数据所述存储单元基于所述阈值电压，所述第一边界电压和所述第二边界电压。

24. 发明申请

US20080211511A1 Method of Generating Fault Indication in Feeder Remote Terminal Unit for Power Distribution Automation System 审中-公开
标题翻译：配电自动化系统馈线远程终端单元故障指示生成方法
公开(公告)号：US20080211511A1
公开(公告)日：2008-09-04
申请号：US12019762
申请日：2008-01-25
申请人： Myeon Song Choi , Seong Il Lim , Seung Jae Lee
发明人： Myeon Song Choi , Seong Il Lim , Seung Jae Lee
IPC分类号： G01R31/08
CPC分类号： G01R31/086 , H02H3/081 , H02H3/385 , Y04S10/522
摘要： The present invention relates to a method of generating fault indication in a feeder remote terminal unit for a power distribution automation system. The method is performed in a distribution system that includes a plurality of feeder remote terminal units, which are installed in respective sections of a line and are configured to measure voltage, current and a phase difference of the line, and a central control unit for determining whether a fault occurs and controlling operation of the feeder remote terminal units. In the method, phases are measured by each of the feeder remote terminal units. The phase of a zero-sequence current is compared with that of a zero-sequence voltage. A direction of a fault current is calculated, and fault indication information is generated in the calculated direction of the fault current.
摘要翻译：本发明涉及在配电自动化系统的馈线远程终端单元中产生故障指示的方法。该方法在包括多个馈线远程终端单元的分配系统中执行，该多个馈线远程终端单元安装在线路的各个部分中，并被配置为测量线路的电压，电流和相位差;以及中央控制单元，用于确定是否发生故障并控制馈线远程终端单元的操作。在该方法中，通过每个馈线远程终端单元测量相位。将零序电流的相位与零序电压的相位进行比较。计算故障电流的方向，并根据故障电流的计算方向生成故障指示信息。

25. 发明申请

US20080183406A1 Online IED Fault Diagnosis Device and Method for Substation Automation System Based on IEC61850 审中-公开
标题翻译：基于IEC61850的变电站自动化系统在线IED故障诊断装置及方法
公开(公告)号：US20080183406A1
公开(公告)日：2008-07-31
申请号：US12021501
申请日：2008-01-29
申请人： Seung Jae Lee , Seong Jeong Rim , Seong II Lim
发明人： Seung Jae Lee , Seong Jeong Rim , Seong II Lim
IPC分类号： G01R31/02
CPC分类号： G01R19/2513 , G01R31/2827
摘要： Disclosed is a fault diagnosis device for diagnosing a fault in a bay Intelligent Electronic Device (IED) for a substation automation system, which includes an online IED diagnosis device and a backup IED. The online IED diagnosis device includes an IED selection unit, an IED switch unit, a fault diagnosis, and a result display unit. With reference to a Substation Configuration Description (SCD) file, the online IED diagnosis device designates an IED to be tested, and extracts backup information for the IED to be tested. A backup IED replaces the operation of the IED to be tested based on the extracted backup information. Further, the online IED diagnosis device determines the occurrence or non-occurrence of a fault in the IED to be tested by analyzing response information received in response to transmission of a test pattern to the IED to be tested.
摘要翻译：公开了用于诊断用于变电站自动化系统的托架智能电子设备（IED）中的故障的故障诊断装置，其包括在线IED诊断装置和备用IED。在线IED诊断装置包括IED选择单元，IED开关单元，故障诊断和结果显示单元。参考变电站配置说明（SCD）文件，在线IED诊断设备指定要测试的IED，并提取要测试的IED的备份信息。备份IED根据提取的备份信息替换要测试的IED的操作。此外，在线IED诊断装置通过分析响应于测试模式的发送而接收到的响应信息，来测试待测IED中的故障的发生或不发生。

26. 发明申请

US20080008916A1 COOLING PLATE HAVING IMPROVED FLOW CHANNELS 失效
标题翻译：具有改进流量通道的冷却板
公开(公告)号：US20080008916A1
公开(公告)日：2008-01-10
申请号：US11684247
申请日：2007-03-09
申请人： Jae-young Shin , Jie Peng , Seung Jae Lee , Tae-won Song
发明人： Jae-young Shin , Jie Peng , Seung Jae Lee , Tae-won Song
IPC分类号： H01M8/04
CPC分类号： H01M8/0267 , H01M8/026 , H01M8/0265 , H01M8/04029 , H01M8/04074 , H01M8/241
摘要： A cooling plate in which flow channels are modified to reduce temperature differences between portions of the cooling plate and provide for more uniform heat distribution within a heat generator. The flow channels of the cooling plate are formed such that a central portion of the flow channels has a greater volume than the end portions near an inlet and an outlet so that the amount of cooling water that is contained in the central portion at any one time is larger than either of the end portions near the inlet and the outlet. Likelihood of thermal deformation of the cooling plate due to thermal stress is decreased, and stability of performance of the fuel cell is increased.
摘要翻译：一种冷却板，其中流动通道被修改以减少冷却板的部分之间的温度差，并且在发热体内提供更均匀的热分布。冷却板的流动通道形成为使得流动通道的中心部分具有比入口和出口附近的端部更大的体积，使得在任何一个时间内包含在中心部分中的冷却水的量大于入口和出口附近的端部中的任一个。由于热应力引起的冷却板的热变形的可能性降低，燃料电池的性能的稳定性提高。

27. 发明申请

US20210189534A1 FERRITIC ALLOY AND METHOD OF MANUFACTURING NUCLEAR FUEL CLADDING TUBE USING THE SAME 有权
公开(公告)号：US20210189534A1
公开(公告)日：2021-06-24
申请号：US16799612
申请日：2020-02-24
申请人： Sung Yong Lee , Hun Jang , Seung Jae Lee , Yoon Ho Kim , Dae Gyun Ko , Changheui Jang , Chaewon Kim , Hyunmyung Kim
发明人： Sung Yong Lee , Hun Jang , Seung Jae Lee , Yoon Ho Kim , Dae Gyun Ko , Changheui Jang , Chaewon Kim , Hyunmyung Kim
IPC分类号： C22C38/40 , C22C38/04 , C22C38/06 , C22C38/00 , C21D8/10
摘要： Embodiments of the disclosure relate to a ferritic alloy having excellent ability to withstand nuclear power plant accidents and a method of manufacturing a nuclear fuel cladding tube using the same. The alloy includes iron (Fe), aluminum (Al), chromium (Cr), and nickel (Ni). The nickel (Ni) may be included 0.5 to 10 wt % based on a total amount of the alloy. The chromium may be included 13 to 18 wt % based on the total amount of the alloy. The aluminum may be included 5 to 7 wt % based on the total amount of the alloy.

28. 发明授权

US09633640B1 Guitar effector 有权
公开(公告)号：US09633640B1
公开(公告)日：2017-04-25
申请号：US15363322
申请日：2016-11-29
申请人： Seung Jae Lee
发明人： Seung Jae Lee
IPC分类号： G10H1/34 , G10H1/46
CPC分类号： G10H1/348 , G10H1/0091 , G10H1/46 , G10H2210/251 , G10H2210/281 , G10H2210/311
摘要： Provided is an adjustment unit for guitar effector that is installed between input unit and output unit to adjust a volume and a tone based on the output signal by using a variable resistor in an analog circuit. The adjustment unit comprises one or more of a level part that adjusts a size of the output signal, a tone part that adjusts an amount of high-pitched sound and an amount of low-pitched sound, and a distortion part that adjusts a degree of distortion, one or more of the level part, the tone part and the distortion part are plural, and a switch comprising one or more of a level switch for selecting any one of the plurality of level parts, a tone switch for selecting any one of the plurality of tone parts, and a distortion switch for selecting any one of the plurality of distortion parts is installed.

29. 发明申请

US20140114071A1 PROCESS FOR THE PREPARATION OF ANHYDROUS ARIPIPRAZOLE CRYSTAL FORM II 有权
标题翻译：制备无水阿维拉唑晶体形式的方法II
公开(公告)号：US20140114071A1
公开(公告)日：2014-04-24
申请号：US14008167
申请日：2012-03-30
申请人： Soo Jin Choi , Seong Soo Oh , Yong Suk Jin , Yong Tae Kim , Seung Jae Lee , Jeong Hyun Son
发明人： Soo Jin Choi , Seong Soo Oh , Yong Suk Jin , Yong Tae Kim , Seung Jae Lee , Jeong Hyun Son
IPC分类号： C07D215/227
CPC分类号： C07D215/227 , A61K31/4709 , A61K31/496
摘要： The present invention relates to a process for preparation of aripiprazole crystal form II by recrystallizing aripiprazole in a mixture of acetone and 1-methoxy-2-propanol or a single solvent of 1-methoxy-2-propanol. The simple process according to the present invention can produce aripiprazole crystal form II with high purity and high yield in a mass scale.
摘要翻译：本发明涉及通过将阿立哌唑在丙酮和1-甲氧基-2-丙醇或1-甲氧基-2-丙醇的单一溶剂的混合物中重结晶制备阿立哌唑晶型II的方法。根据本发明的简单方法可以以大规模生产高纯度和高产率的阿立哌唑晶型II。

30. 发明申请

US20140042600A1 Semiconductor Package and Manufacturing Method Thereof 有权
标题翻译：半导体封装及制造方法
公开(公告)号：US20140042600A1
公开(公告)日：2014-02-13
申请号：US13962735
申请日：2013-08-08
申请人： Jin Young Kim , No Sun Park , Yoon Joo Kim , Choon Heung Lee , Jin Han Kim , Seung Jae Lee , Se Woong Cha , Sung Kyu Kim , Glenn Rinne
发明人： Jin Young Kim , No Sun Park , Yoon Joo Kim , Choon Heung Lee , Jin Han Kim , Seung Jae Lee , Se Woong Cha , Sung Kyu Kim , Glenn Rinne
IPC分类号： H01L23/00
CPC分类号： H01L25/0657 , H01L23/00 , H01L23/293 , H01L23/3135 , H01L23/3171 , H01L24/09 , H01L24/19 , H01L24/73 , H01L24/81 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73209 , H01L2224/73267 , H01L2924/1461 , H01L2924/18162 , H01L2924/19107 , H01L2924/00
摘要： A semiconductor package and manufacturing method thereof are disclosed and may include a first semiconductor device comprising a first bond pad on a first surface of the first semiconductor device, a first encapsulant material surrounding side edges of the first semiconductor device, and a redistribution layer (RDL) formed on the first surface of the first semiconductor device and on a first surface of the encapsulant material. The RDL may electrically couple the first bond pad to a second bond pad formed above the first surface of the encapsulant material. A second semiconductor device comprising a third bond pad on a first surface of the second semiconductor device may face the first surface of the first semiconductor device and be electrically coupled to the first bond pad on the first semiconductor device. The first surface of the first semiconductor device may be coplanar with the first surface of the encapsulant material.
摘要翻译：公开了半导体封装及其制造方法，并且可以包括第一半导体器件，其包括在第一半导体器件的第一表面上的第一接合焊盘，围绕第一半导体器件的侧边缘的第一密封材料和再分配层（RDL ）形成在第一半导体器件的第一表面上并且在密封剂材料的第一表面上。 RDL可以将第一接合焊盘电耦合到形成在密封剂材料的第一表面上方的第二接合焊盘。包括在第二半导体器件的第一表面上的第三接合焊盘的第二半导体器件可面向第一半导体器件的第一表面并且电耦合到第一半导体器件上的第一接合焊盘。第一半导体器件的第一表面可以与密封剂材料的第一表面共面。

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