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    • 22. 发明授权
    • Electrostatic information recording medium and electrostatic information
recording and reproducing method
    • 静电信息记录介质和静电信息记录和再现方法
    • US5439768A
    • 1995-08-08
    • US616445
    • 1990-11-20
    • Makoto MatsuoMinoru UtsumiMasayuki IijimaYukio TaniguchiHiroyuki ObataSeiji Take
    • Makoto MatsuoMinoru UtsumiMasayuki IijimaYukio TaniguchiHiroyuki ObataSeiji Take
    • G03G5/02G03G15/05G11B9/08G11B11/08H04N5/80H04N9/802G03G15/00
    • H04N5/80G03G15/05G03G5/02G03G5/0205G03G5/0208G11B11/08G11B9/08H04N9/802
    • The present invention relates to an electrostatic information recording medium in which a charge retaining layer having high insulating properties is laminated on an electrode, and an electrostatic information recording/reproducing process wherein, while said electrostatic information recording medium is positioned in opposition to a photosensitive member on which a photoconductive layer is laminated, the recording medium is subjected to information exposure with the application of voltage between both electrodes to accumulate electrostatic charges thereon depending upon the dosage of said information exposure, and the electrostatic information thus accumulated is reproduced by potential reading.The present electrostatic information recording medium has an information density as expressed in terms of a high recording capacity of the order of 8.times.10.sup.8 bits/cm.sup.2, and makes it possible to process information in a planar state so that analog or digital information such as characters, line pictures, images, (0.1) information and sounds can be accumulated in the form of electrostatic charges. With the present electrostatic information recording medium, it is possible to obtain information of high quality and resolving power because of the information being accumulatable in electrostatic charge units. Due to its high charge retainability, it is further possible to store information permanently. Still further, it is possible to make inexpensive and simple recording/reproducing systems, since information can be output by reading local potentials of electrostatic latent images at any time and any scanning density.
    • 本发明涉及一种静电信息记录介质,其中具有高绝缘性的电荷保持层层压在电极上,以及静电信息记录/再现过程,其中当所述静电信息记录介质与感光构件相对置 在其上层叠有光电导层,根据所述信息曝光的剂量,通过施加两电极之间的电压来对记录介质进行信息曝光,以在其上累积静电电荷,并且通过潜在读数再现累积的静电信息。 本静电信息记录介质具有以8×10 8位/ cm 2的高记录容量表示的信息密度,并且使得可以在平面状态下处理信息,使得诸如字符,行等的模拟或数字信息 图像,图像,(0.1)信息和声音可以以静电电荷的形式累积。 利用本静电信息记录介质,由于信息可以在静电荷单元中累积,所以可以获得高质量和分辨能力的信息。 由于其高的电荷保持性,因此还可以永久地存储信息。 此外,由于可以通过在任何时间读取静电潜像的局部电位和任何扫描密度来输出信息,所以可以制造便宜且简单的记录/再现系统。
    • 23. 发明授权
    • Potential sensor employing electrooptic crystal and potential measuring
method
    • 采用电光晶体的潜在传感器和电位测量方法
    • US5434698A
    • 1995-07-18
    • US94907
    • 1993-07-20
    • Atsushi TakanoMinoru UtsumiHiroyuki Obata
    • Atsushi TakanoMinoru UtsumiHiroyuki Obata
    • G01R1/07G01R15/24G02F1/015G01R31/00
    • G01R1/071G01R15/242
    • A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used. The high-resistance compound semiconductor 12 is also required to have a large electrooptic constant and a resistivity of 10.sup.5 .OMEGA.cm or more.
    • 在低电阻化合物半导体11上外延生长高电阻化合物半导体12,并在其上形成电介质反射膜13,从而形成单片传感器10.作为低电阻化合物半导体11,使用化合物半导体 具有大的带隙,使得探针光能够通过而不被吸收并且具有接近于高电阻化合物半导体的晶格常数和热膨胀系数。 此外,由于低电阻化合物半导体11也用作电极,所以使用电阻率为10 + 1欧姆·厘米或更小的化合物半导体。 由于使用的探针光的波长越短,延迟变化越大,信号输出越大,所以使用具有大带隙的化合物半导体作为高电阻化合物半导体12,能够使用短波长的光 。 高电阻化合物半导体12还需要具有大的电光常数和105欧姆·厘米或更高的电阻率。
    • 27. 发明授权
    • Printed circuit board
    • 印刷电路板
    • US06369336B1
    • 2002-04-09
    • US09267442
    • 1999-03-12
    • Hiroyuki Obata
    • Hiroyuki Obata
    • H05K111
    • H01R12/721H01R12/714H01R13/2464H05K1/117H05K3/429H05K2201/09154H05K2201/09481
    • A printed circuit board is disclosed which has conductive pads located near an edge of a board main body on its upper and lower surfaces to reduce the width in the direction of contact sliding and to provide for a smoother connection between electrical contacts of an electrical connector and the conductive pads despite a powdered substance produced as a result of friction between the conductive pads and the electrical contacts. The printed circuit board (1) has conductive pads (14a, 14b) on upper and lower surfaces of the board main body (2) near the edge (3) of the main body (2). Electrical contacts (20) slide over the conductive pads (14a, 14b) from the edge (3) of the board main body (2). The conductive pads (14a, 14b) are connected together by via holes (15a) that are located in the paths of the contacts (20).
    • 公开了一种印刷电路板,其具有位于其上表面和下表面上的板主体的边缘附近的导电焊盘,以减小接触滑动方向上的宽度,并提供电连接器的电触点与 导电焊盘,尽管由于导电焊盘和电触头之间的摩擦而产生的粉末状物质。 印刷电路板(1)在主体(2)的边缘(3)附近在板主体(2)的上表面和下表面上具有导电焊盘(14a,14b)。 电触点(20)从电路板主体(2)的边缘(3)滑过导电焊盘(14a,14b)。 导电焊盘(14a,14b)通过位于触点(20)的路径中的通孔(15a)连接在一起。