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21. 发明授权

US06821810B1 High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers 有权
标题翻译：高透光率外涂层，用于优化半导体彩色成像器中的长焦距微透镜阵列
公开(公告)号：US06821810B1
公开(公告)日：2004-11-23
申请号：US09633644
申请日：2000-08-07
申请人： Yu-Kung Hsiao , Sheng-Liang Pan , Bii-Juno Chang , Kuo-Liang Lu
发明人： Yu-Kung Hsiao , Sheng-Liang Pan , Bii-Juno Chang , Kuo-Liang Lu
IPC分类号： H01L2100
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14623 , H01L31/02327
摘要： A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectronic fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for lowcost, high volume manufacturing of CMOS and CCD color video cameras.
摘要翻译：在微透镜层之上施加具有有效平面顶表面和特定光学和材料特性的透光率外涂层以延长焦距并增强半导体阵列彩色成像装置的长焦距微透镜的性能。公开了实现优化的长焦距微透镜性能的几何光学设计因子和微电子制造序列。示出了本发明中教导的自适应过程的主要优点，以实现对过程和材料变化的实时补偿调整。外涂层工艺使简化的单层集成微透镜光学器件用于CMOS和CCD彩色摄像机的低成本，大批量制造。

22. 发明授权

US06686292B1 Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer 失效
标题翻译：用于形成均匀线宽无残余图案复合硅的电介质层/硅堆叠层的等离子体蚀刻方法
公开(公告)号：US06686292B1
公开(公告)日：2004-02-03
申请号：US09221958
申请日：1998-12-28
申请人： Szu-Hung Yang , Sheng-Liang Pan
发明人： Szu-Hung Yang , Sheng-Liang Pan
IPC分类号： H01L21311
CPC分类号： H01L21/308 , H01L21/3065 , H01L21/31116 , H01L21/31144 , H01L29/66477
摘要： A method for forming a patterned composite stack layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket silicon layer. There is then formed upon the blanket silicon layer a blanket silicon containing dielectric layer. There is then formed upon the blanket silicon containing dielectric layer a patterned photoresist layer. Finally, there is etched sequentially while employing the patterned photoresist layer as a photoresist etch mask the blanket silicon containing dielectric layer and the blanket silicon layer to form a patterned composite stack layer comprising a patterned silicon containing dielectric layer coextensive with a patterned silicon layer, where the sequential etching is undertaken employing in situ in a single plasma reactor chamber or cluster of adjoining chambers a sequential plasma etch method employing a sequence of etching gas compositions which upon plasma activation perform the etching reactions with uniform linewidth dimensions and attenuated polymer residue formation and defect levels.
摘要翻译：一种在微电子制造中形成图案化复合叠层的方法。首先提供基板。然后在衬底上形成覆盖硅层。然后在橡皮布硅层上形成覆盖硅的介电层。然后在覆盖有硅的电介质层上形成图案化的光致抗蚀剂层。最后，在使用图案化的光致抗蚀剂层作为光刻胶蚀刻掩模，覆盖含硅的介电层和橡皮布硅层以形成图案化复合堆叠层的同时蚀刻顺序地形成图案化复合堆叠层，其包括与图案化的硅层共同延伸的图案化的含硅介电层，其中在单个等离子体反应器腔室或相邻腔室的阵列中采用原位进行顺序腐蚀，其使用蚀刻气体组合物序列的顺序等离子体蚀刻方法，其在等离子体激活时进行具有均匀线宽尺寸和减弱的聚合物残余物形成和缺陷的蚀刻反应水平。

23. 发明授权

US06582988B1 Method for forming micro lens structures 有权
标题翻译：微透镜结构的形成方法
公开(公告)号：US06582988B1
公开(公告)日：2003-06-24
申请号：US09902894
申请日：2001-07-12
申请人： Yu-Kung Hsiao , Sheng-Liang Pan , Bii Junq Chang
发明人： Yu-Kung Hsiao , Sheng-Liang Pan , Bii Junq Chang
IPC分类号： H01L2100
CPC分类号： G02B3/0018 , G02B3/0056 , H01L27/14627 , H01L27/14685 , H01L31/02327
摘要： The present invention features a method for forming micro lens arrays on light-sensitive or light-emitting semiconductor structures. A unique oxygen plasma etch “descum” step is performed prior to the lens reflow hardbake. In addition, a photo-sensitive planarization layer place immediately atop a color filter layer results in fewer process steps. The micro lens array thus formed has a minimal number of merged or collapsed lenses and residue on bond pad areas is significantly reduced.
摘要翻译：本发明的特征在于在光敏或发光半导体结构上形成微透镜阵列的方法。在镜头回流硬烘烤之前执行独特的氧等离子体蚀刻“除尘”步骤。另外，在彩色滤光层之上立即放置的光敏平面化层导致较少的工艺步骤。如此形成的微透镜阵列具有最少数量的合并或折叠的透镜，并且焊接区域上的残留物显着减少。

24. 发明授权

US06274917B1 High efficiency color filter process for semiconductor array imaging devices 有权
公开(公告)号：US06274917B1
公开(公告)日：2001-08-14
申请号：US09693505
申请日：2000-10-23
申请人： Yang-Tung Fan , Sheng-Liang Pan , Bii-Cheng Chang , Kuo-Liang Lu
发明人： Yang-Tung Fan , Sheng-Liang Pan , Bii-Cheng Chang , Kuo-Liang Lu
IPC分类号： H01L310232
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14627
摘要： A microelectronic method is described for optimizing the fabrication of optical and semiconductor array structures for high efficiency color image formation in solid-state cameras. Disclosed is an ordered fabrication sequence in which microlens formation precedes color filter layer formation to enable increased image light collection efficiency, to encapsulate and protect the microlens elements from chemical and thermal processing damage, to minimize topographical underlayer variations which would axially misalign or otherwise aberrate microlens elements formed on non-planar surfaces, and, to complete the most difficult steps early in the process to minimize rework and scrap. A CMOS, CID, or CCD optoelectronic configuration is formed by photolithographically patterning a planar-array of photodiodes on a Silicon or other III-V, II-VI, or compound semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, planarized, and, a first convex microlens array of high curvature or other suitable lenses are formed thereon. A transparent encapsulant is deposited to planarize the microlens layer and provide a spacer for the successive deposition(s) of one or more color filter layers. The microlens array may be formed from positive photoresists and the spacer from negative resist, with close attention to matching the index of refraction at layer interfaces. A final surface layer comprising a color filter completes the solid-state color image-forming device.

25. 发明授权

US5556806A Spin-on-glass nonetchback planarization process using oxygen plasma treatment 失效
标题翻译：使用氧等离子体处理的旋转玻璃非回转平面化工艺
公开(公告)号：US5556806A
公开(公告)日：1996-09-17
申请号：US496017
申请日：1995-06-28
申请人： Sheng-Liang Pan , Hsien-Wen Chang , Chien-Fong Chen
发明人： Sheng-Liang Pan , Hsien-Wen Chang , Chien-Fong Chen
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/28
CPC分类号： H01L21/3205 , H01L21/76819 , Y10S438/964
摘要： An improved method is described for planarizing dielectric layers which are formed between conductor layers in integrated circuits A three layer spin-on-glass sandwich is formed comprising a first silicon oxide layer, a spin-on-glass layer and a second silicon oxide layer. The improvement comprises performing an O.sub.2 plasma treatment on the first silicon oxide layer prior to forming the overlying spin-on-glass layer. The method prevents delamination (separation) between the first silicon oxide layer and the middle spin-on-glass layer.
摘要翻译：描述了一种用于平面化在集成电路中的导体层之间形成的介电层的改进方法。形成包括第一氧化硅层，旋涂玻璃层和第二氧化硅层的三层旋涂玻璃夹层物。该改进包括在形成上覆旋涂玻璃层之前在第一氧化硅层上进行O 2等离子体处理。该方法防止第一氧化硅层和中间旋涂玻璃层之间的分层（分离）。

26. 发明申请

US20060175290A1 Photo resist stripping and de-charge method for metal post etching to prevent metal corrosion 审中-公开
标题翻译：用于金属后蚀刻的光刻胶剥离和去电方法，以防止金属腐蚀
公开(公告)号：US20060175290A1
公开(公告)日：2006-08-10
申请号：US11054015
申请日：2005-02-09
申请人： Yuan-Bang Lee , Tzu-Yang Wu , Sheng-Liang Pan , Chung-Yuan Cheng , Sheng-Chieh Liu
发明人： Yuan-Bang Lee , Tzu-Yang Wu , Sheng-Liang Pan , Chung-Yuan Cheng , Sheng-Chieh Liu
IPC分类号： C23F1/00 , H01L21/302 , B44C1/22 , C03C15/00
CPC分类号： H01L21/32138 , C23F4/00 , G03F7/427 , H01L21/31138 , H01L21/32136
摘要： An pure H2O stripping process for etched metal wafers effectively solves the metal corrosion deficiencies induced by O2, N2 plasma charging. The pure H2O plasma stripping releases and neutralizes the storage of positive charge accumulated in the wafer, reduces chlorine concentration, and effectively strips the photoresist and etching residue. Thereby reducing metal corrosion and increases the anti-metal corrosion window. The pure H2O plasma stripping requires no additional equipment and or steps.
摘要翻译：用于蚀刻的金属晶片的纯H 2 O 2剥离工艺有效地解决了由O 2，N 2等离子体充电引起的金属腐蚀缺陷。纯H 2 O等离子体剥离释放和中和积聚在晶片中的正电荷的存储，降低氯浓度，并有效地剥离光致抗蚀剂和蚀刻残留物。从而减少金属腐蚀并增加抗金属腐蚀窗口。纯H 2 O 3等离子体剥离不需要额外的设备和/或步骤。

27. 发明授权

US06911097B1 Photoresist stripper using nitrogen bubbler 失效
标题翻译：使用氮气鼓泡机的光刻胶剥离器
公开(公告)号：US06911097B1
公开(公告)日：2005-06-28
申请号：US09629213
申请日：2000-07-31
申请人： Chie-Chi Chen , Wen-Hsiang Tseng , Sheng-Liang Pan , Jen-Shiang Fang
发明人： Chie-Chi Chen , Wen-Hsiang Tseng , Sheng-Liang Pan , Jen-Shiang Fang
IPC分类号： B08B3/10 , B08B5/00 , H01L21/00
CPC分类号： H01L21/67086 , B08B3/102 , Y10S438/906
摘要： Provided is a process and apparatus characterized by a gas distribution plate in which a gas supply manifold directs gas bubbles from the bottom of a process tank upward and between wafers contained in a cassette and supported therewithin. This improved method and apparatus is used for effectively stripping photoresist from the larger semiconductor wafers having dense top conductive patterns with protuberant sidewalls. The method provides a scrubbing action that is parallel to the device array being formed on the wafer's surface. Broadly stated, the method of a chemical action on large substrates supported adjacent respective edge portions thereof in a carrier includes submerging the carrier and substrates supported thereby in a process tank containing a liquid chemical, and a gas distribution plate disposed on the bottom of the tank for directing gas bubbles upward and parallel to the surfaces of each substrate contained in the carrier to ensure that a uniform chemical action occurs.
摘要翻译：提供了一种工艺和装置，其特征在于气体分配板，其中气体供应歧管将处理罐底部的气泡向上引导到包含在盒中并在其中支撑的晶片之间。这种改进的方法和装置用于从具有突出侧壁的致密顶部导电图案的较大半导体晶片有效地剥离光致抗蚀剂。该方法提供了平行于在晶片表面上形成的器件阵列的擦洗动作。广泛地说，在载体附近支撑在其各个边缘部分上的大的基板上的化学作用的方法包括将载体和由其支撑的基板浸没在包含液体化学品的处理槽中，以及设置在罐的底部上的气体分配板用于将气泡向上引导并平行于包含在载体中的每个基底的表面，以确保发生均匀的化学作用。

28. 发明授权

US06712260B1 Bump reflow method by inert gas plasma 失效
标题翻译：通过惰性气体等离子体进行爆破回流
公开(公告)号：US06712260B1
公开(公告)日：2004-03-30
申请号：US10124998
申请日：2002-04-18
申请人： Wen-Chang Kuo , Chia-Fu Lin , Sheng-Liang Pan , Szu-Yao Wang , Cheng-Yu Chu
发明人： Wen-Chang Kuo , Chia-Fu Lin , Sheng-Liang Pan , Szu-Yao Wang , Cheng-Yu Chu
IPC分类号： B23K3102
CPC分类号： B23K35/38 , B23K1/0016 , B23K1/206 , B23K2101/40 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05572 , H01L2224/056 , H01L2224/13099 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H05K3/3457 , H05K2203/0315 , H05K2203/043 , H05K2203/095 , H01L2224/05099
摘要： A method of forming reflowed bumps comprising the following sequential steps. A wafer is provided. A series of spaced initial bumps is formed upon the wafer. The initial bumps having exposed side walls and top surfaces and organic residue over the initial bump side walls and/or the initial bump top surfaces. The organic residue is simultaneously removed from the initial bump side walls and top surfaces with the forming a surface oxide layer over the initial bump side walls and top surfaces. The surface oxide layer is stripped from the initial bump top surfaces and an upper portion of the initial bump side walls to form partially exposed bumps. The partially exposed bumps are heat treated to melt the partially exposed bumps to form the reflowed bumps.
摘要翻译：一种形成回流凸块的方法，包括以下顺序步骤。提供晶片。在晶片上形成一系列间隔开的初始凸块。初始凸起在初始凸起侧壁和/或初始凸起顶表面上具有暴露的侧壁和顶表面以及有机残余物。有机残余物同时从初始凸块侧壁和顶表面去除，在初始凸块侧壁和顶表面上形成表面氧化层。表面氧化物层从初始凸起顶表面和初始凸块侧壁的上部剥离以形成部分暴露的凸块。部分暴露的凸起被热处理以熔化部分暴露的凸块以形成回流的凸块。

29. 发明授权

US06623912B1 Method to form the ring shape contact to cathode on wafer edge for electroplating in the bump process when using the negative type dry film photoresist 有权
标题翻译：在使用负型干膜光致抗蚀剂时，在凸块工艺中形成与晶片边缘上的阴极形成环形电镀方法
公开(公告)号：US06623912B1
公开(公告)日：2003-09-23
申请号：US09867094
申请日：2001-05-30
申请人： Kai-Ming Ching , Yu-Kung Hsiao , Sheng-Liang Pan , Kuo-Liang Lu
发明人： Kai-Ming Ching , Yu-Kung Hsiao , Sheng-Liang Pan , Kuo-Liang Lu
IPC分类号： G03F730
CPC分类号： H01L21/76885 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/1147 , H01L2224/13099 , H01L2924/00014 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01075 , H01L2924/01078 , H01L2924/014 , H01L2224/05599
摘要： A method of clearing photoresist on a wafer edge, including the following steps. A wafer having a upper exposed conductive layer is provided. The wafer having a center, an edge and a ring-shaped area proximate the wafer edge. A photoresist layer is formed upon the exposed conductive layer. The photoresist layer is removed from within the ring-shaped area by a rinse process to expose the conductive layer within the ring-shaped area. An oxygen diffusion barrier layer is formed over the photoresist layer.
摘要翻译：一种在晶片边缘上清除光致抗蚀剂的方法，包括以下步骤。提供具有上暴露导电层的晶片。该晶片具有靠近晶片边缘的中心，边缘和环形区域。在暴露的导电层上形成光致抗蚀剂层。通过漂洗工艺从环形区域内去除光致抗蚀剂层，以暴露环形区域内的导电层。在光致抗蚀剂层上形成氧扩散阻挡层。

30. 发明授权

US06360756B1 Wafer rinse tank for metal etching and method for using 有权
标题翻译：用于金属蚀刻的晶圆冲洗槽和使用方法
公开(公告)号：US06360756B1
公开(公告)日：2002-03-26
申请号：US09325307
申请日：1999-06-03
申请人： Chie-Chi Chen , Tzu-Yang Chung , Szu-Yao Wang , Sheng-Liang Pan
发明人： Chie-Chi Chen , Tzu-Yang Chung , Szu-Yao Wang , Sheng-Liang Pan
IPC分类号： B08B704
CPC分类号： H01L21/67057 , B08B3/102 , Y10S134/902
摘要： A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2˜3 minutes shorter than that required by using conventional rinse tanks.
摘要翻译：提供了一种用于在化学过程之后冲洗电子基板的冲洗槽和用于使用这种冲洗槽的方法。在冲洗槽中，进行快速冲洗冲洗的装置; 在单个冲洗槽的空腔中设置用于进行级联溢流冲洗和用于进料惰性气体鼓泡的装置。通过利用本发明的新型漂洗槽，在常规冲洗槽中经常观察到的处理问题，其中需要两个漂洗槽用于快速冲洗冲洗和级联溢流冲洗，例如颗粒再沉积和大的占地空间面积要求，消除了此外，在金属蚀刻工艺之后的晶片冲洗过程可以在比使用常规冲洗槽所需的总处理时间短至少2〜3分钟的时间内完成。

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