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1. 发明授权

US06360756B1 Wafer rinse tank for metal etching and method for using 有权
标题翻译：用于金属蚀刻的晶圆冲洗槽和使用方法
公开(公告)号：US06360756B1
公开(公告)日：2002-03-26
申请号：US09325307
申请日：1999-06-03
申请人： Chie-Chi Chen , Tzu-Yang Chung , Szu-Yao Wang , Sheng-Liang Pan
发明人： Chie-Chi Chen , Tzu-Yang Chung , Szu-Yao Wang , Sheng-Liang Pan
IPC分类号： B08B704
CPC分类号： H01L21/67057 , B08B3/102 , Y10S134/902
摘要： A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2˜3 minutes shorter than that required by using conventional rinse tanks.
摘要翻译：提供了一种用于在化学过程之后冲洗电子基板的冲洗槽和用于使用这种冲洗槽的方法。在冲洗槽中，进行快速冲洗冲洗的装置; 在单个冲洗槽的空腔中设置用于进行级联溢流冲洗和用于进料惰性气体鼓泡的装置。通过利用本发明的新型漂洗槽，在常规冲洗槽中经常观察到的处理问题，其中需要两个漂洗槽用于快速冲洗冲洗和级联溢流冲洗，例如颗粒再沉积和大的占地空间面积要求，消除了此外，在金属蚀刻工艺之后的晶片冲洗过程可以在比使用常规冲洗槽所需的总处理时间短至少2〜3分钟的时间内完成。

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