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21. 发明授权

US08818072B2 Rendered database image-to-inspection image optimization for inspection 有权
标题翻译：渲染数据库图像到检查图像优化进行检查
公开(公告)号：US08818072B2
公开(公告)日：2014-08-26
申请号：US12868483
申请日：2010-08-25
申请人： Biow-Hiem Ong , Rick Lai , Chih-Chiang Tu , Chia-Shih Lin , Jong-Yuh Chang
发明人： Biow-Hiem Ong , Rick Lai , Chih-Chiang Tu , Chia-Shih Lin , Jong-Yuh Chang
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G06T7/001 , G06T2207/30148
摘要： The present disclosure provides a method of inspecting a photolithographic mask wherein a design database is received, and a feature of the design database is adjusted by a bias factor to produce a biased database. Image rendering is performed on the biased database to produce a biased image. A mask is also created using the design database, and the mask is imaged to produce a mask image. The biased image is compared to the mask image, and a new value for the bias factor may be determined based on the comparison.
摘要翻译：本公开提供了一种检查其中接收到设计数据库的光刻掩模的方法，并且通过偏置因子来调整设计数据库的特征以产生偏置的数据库。在偏置数据库上执行图像渲染以产生偏置图像。还使用设计数据库创建掩模，并对掩模进行成像以产生掩模图像。将偏置图像与掩模图像进行比较，并且可以基于比较来确定偏置因子的新值。

22. 发明申请

US20110159410A1 COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION 有权
标题翻译：用于极端超紫外线（EUV）掩蔽生产的成本有效的方法
公开(公告)号：US20110159410A1
公开(公告)日：2011-06-30
申请号：US12650985
申请日：2009-12-31
申请人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
发明人： Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/24 , G03F1/72 , G03F1/84
摘要： The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
摘要翻译：本公开提供了许多不同的实施例。示例性方法可以包括提供空白掩模和要在空白掩模上图案化的设计布局，所述设计布局包括临界区域; 检查空白掩模的缺陷并产生与空白掩模相关联的缺陷分布图; 将缺陷分布图映射到设计布局; 进行面膜制作过程; 以及基于所述映射执行掩模缺陷修复处理。

23. 发明申请

US20110091797A1 SUPERIMPOSE PHOTOMASK AND METHOD OF PATTERNING 有权
标题翻译：超级光电照相机和方式
公开(公告)号：US20110091797A1
公开(公告)日：2011-04-21
申请号：US12582959
申请日：2009-10-21
申请人： Hsiao Chih Chang , Dong-Hsu Cheng , Chih-Chiang Tu
发明人： Hsiao Chih Chang , Dong-Hsu Cheng , Chih-Chiang Tu
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/70466 , G03F1/50 , G03F7/70283 , G03F7/70433
摘要： Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design pattern to be transferred onto a wafer in a lithography process.
摘要翻译：提供一种光掩模，其包括具有第一区域和第二区域的基板，设置在基板的第一区域中的第一图案和设置在基板的第二区域中的第二图案。第一和第二图案是在光刻工艺中转移到晶片上的设计图案的分解。

24. 发明授权

US5792578A Method of forming multiple layer attenuating phase shifting masks 失效
标题翻译：形成多层衰减相移掩模的方法
公开(公告)号：US5792578A
公开(公告)日：1998-08-11
申请号：US782705
申请日：1997-01-13
申请人： San-De Tzu , Jia-Jing Wang , Chih-Chiang Tu , Wen-Hong Huang
发明人： San-De Tzu , Jia-Jing Wang , Chih-Chiang Tu , Wen-Hong Huang
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/142
摘要： This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before this step is carried out is thereby improved.
摘要翻译：本发明描述了形成双层衰减相移掩模的新方法。在衰减相移材料层中形成第一图案，并且在不透明材料层中形成对准图案。使用第一抗蚀剂来形成第一图案。防护薄膜组件仅用于限制第二抗蚀剂沉积到掩模的对准区域，因此第一抗蚀剂和第二抗蚀剂都不能经受干蚀刻步骤。因此，在进行衰减相变材料的形成第一图案的步骤之前和在进行该步骤之前的清洁之前，第一抗蚀剂被去除。

25. 发明授权

US5714285A Using (LaNiO.sub.3).sub.X (TiO.sub.2).sub.1-x oxide absorption composite for attenuating phase shifting blanks and masks 失效
标题翻译：使用（LaNiO3）X（TiO2）1-x氧化物吸收复合材料来衰减相移毛坯和掩模
公开(公告)号：US5714285A
公开(公告)日：1998-02-03
申请号：US682475
申请日：1996-07-17
申请人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chao-Chen Cheng
发明人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chao-Chen Cheng
IPC分类号： G06F1/20 , G03F1/00 , G03F1/32 , G06F1/04 , H01L21/822 , H01L27/04 , G03F9/00
CPC分类号： G03F1/32
摘要： An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is TiO.sub.2. The first and second materials are combined as a composite of (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and TiO.sub.2 using rf magnetron sputtering is used to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x film on a transparent quartz substrate.
摘要翻译：使用组合具有高消光系数的第一材料和具有高折射率的第二材料的光学特性的衰减相移复合材料形成衰减相移光掩模。第一种材料是LaNiO3，第二种材料是TiO2。将第一和第二材料作为（LaNiO 3）x（TiO 2）1-x的复合物组合以形成衰减相变坯料和掩模。使用rf磁控溅射法共沉积LaNiO3和TiO2，在透明石英衬底上形成（LaNiO3）x（TiO2）1-x薄膜。

26. 发明授权

US09063097B2 Systems and methods eliminating false defect detections 有权
标题翻译：消除假缺陷检测的系统和方法
公开(公告)号：US09063097B2
公开(公告)日：2015-06-23
申请号：US13025709
申请日：2011-02-11
申请人： Biow-Hiem Ong , Chien-Hung Lai , Chih-Chiang Tu , Jong-Yuh Chang , Kuang-Yu Liu
发明人： Biow-Hiem Ong , Chien-Hung Lai , Chih-Chiang Tu , Jong-Yuh Chang , Kuang-Yu Liu
IPC分类号： G01N21/956 , H01L21/66
CPC分类号： G01N21/8806 , G01N21/55 , G01N21/59 , G01N21/9501 , G01N21/956 , G01N2021/558 , G01N2021/8809 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method for inspecting a manufactured product includes applying a first test regimen to the manufactured product to identify product defects. The first test regimen produces a first set of defect candidates. The method further includes applying a second test regimen to the manufactured product to identify product defects. The second test regimen produces a second set of defect candidates, and the second test regimen is different from the first test regimen. The method also includes generating a first filtered defect set by eliminating ones of the first set of defect candidates that are not indentified in the second set of defect candidates.
摘要翻译：用于检查制造产品的方法包括将第一测试方案应用于所制造的产品以识别产品缺陷。第一个测试方案产生第一组缺陷候选物。该方法还包括将第二测试方案应用于所制造的产品以鉴定产品缺陷。第二个测试方案产生第二组缺陷候选物，第二个测试方案与第一个测试方案不同。该方法还包括通过消除在第二组缺陷候选中未识别的第一组缺陷候选中的一个产生第一过滤缺陷集。

27. 发明授权

US08120767B2 Mask making decision for manufacturing (DFM) on mask quality control 有权
标题翻译：面罩制作决策（DFM）对面罩质量控制
公开(公告)号：US08120767B2
公开(公告)日：2012-02-21
申请号：US12048043
申请日：2008-03-13
申请人： Chih-Chiang Tu , Chien-Chao Huang
发明人： Chih-Chiang Tu , Chien-Chao Huang
IPC分类号： G01N21/00 , G06K9/00
CPC分类号： G03F1/84
摘要： The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities according to assigned data types; and repairing the plurality of pattern features on the mask according to the inspecting of the plurality of pattern features.
摘要翻译：本公开提供了一种制造掩模的方法。该方法包括将多个模式特征分配给不同的数据类型; 在掩模上写入多个图案特征; 根据分配的数据类型检查具有不同检查灵敏度的多个图案特征; 以及根据所述多个图案特征的检查来修复所述掩模上的所述多个图案特征。

28. 发明授权

US07571421B2 System, method, and computer-readable medium for performing data preparation for a mask design 有权
标题翻译：用于执行掩模设计的数据准备的系统，方法和计算机可读介质
公开(公告)号：US07571421B2
公开(公告)日：2009-08-04
申请号：US11738844
申请日：2007-04-23
申请人： Peng-Ren Chen , Chien-Chao Huang , Chih-Chiang Tu
发明人： Peng-Ren Chen , Chien-Chao Huang , Chih-Chiang Tu
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method, computer-readable medium, and system for performing data preparation are provided. An integrated circuit design is received, and a plurality of pre-optical proximity correction processes are invoked such that the plurality of pre-optical proximity correction processes are performed in parallel. An optical proximity correction process is invoked in response to a determination that each of the plurality of pre-optical proximity correction processes have completed. A post-optical proximity correction process is invoked in response to a determination that the optical proximity correction process has completed.
摘要翻译：提供了一种用于执行数据准备的方法，计算机可读介质和系统。接收集成电路设计，并且调用多个预光学邻近校正处理，使得并行地执行多个预光学邻近校正处理。响应于多个预光学邻近校正处理中的每一个已经完成的确定来调用光学邻近校正处理。响应于光学邻近校正处理已经完成的确定，调用后光学邻近校正处理。

29. 发明授权

US06495297B1 Type mask for combining off axis illumination and attenuating phase shifting mask patterns 有权
标题翻译：用于组合离轴照明和衰减相移掩模图案的类型掩模
公开(公告)号：US06495297B1
公开(公告)日：2002-12-17
申请号：US09666314
申请日：2000-09-21
申请人： Chih-Chiang Tu , San-De Tzu
发明人： Chih-Chiang Tu , San-De Tzu
IPC分类号： G03F900
CPC分类号： G03F1/78 , G03F1/32
摘要： A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a binary pattern formed using opaque material in the region of the mask with closely spaced lines. The mask design data is used to determine the mask regions using attenuating phase shifting material and the regions of the mask using a binary pattern. The mask is illuminated using off axis illumination, preferably quadrapole off axis illumination. The mask is formed using electron beam exposure of a resist using more than one exposure dose so that only one layer of resist is required to form the two regions of the mask one using attenuating phase shifting material and one using a binary pattern.
摘要翻译：形成掩模的掩模和方法，用于形成具有彼此间隔很远的线和线的电极图案，并且它们之间具有更大的间隔。掩模使用通过使用衰减相移材料形成的图案，用于具有较大分离的线的掩模区域，并且使用不透明材料在具有紧密间隔的线的区域中形成二元图案。掩模设计数据用于使用衰减相移材料和掩模的区域使用二进制图案来确定掩模区域。使用离轴照明照亮掩模，最好是四极偏离轴照明。使用多于一个曝光剂量的抗蚀剂的电子束曝光来形成掩模，使得仅使用一层抗蚀剂来形成使用衰减相移材料的掩模一个的两个区域，而使用二元图案形成掩模的两个区域。

30. 发明授权

US06311319B1 Solving line-end shortening and corner rounding problems by using a simple checking rule 失效
标题翻译：通过简单的检查规则解决线端缩短和圆角问题
公开(公告)号：US06311319B1
公开(公告)日：2001-10-30
申请号：US09083273
申请日：1998-05-22
申请人： Chih-Chiang Tu , Ren-Guey Hsieh
发明人： Chih-Chiang Tu , Ren-Guey Hsieh
IPC分类号： G06F760
CPC分类号： G03F7/70433 , G03F1/36 , G03F7/70441
摘要： A methodolgy is described which allows a variety of optical proximity corrections to be added to a mask pattern at low cost and with a view to minimizing the number of electron beam exposures that will be needed later when the reticle is prepared. The basic approach is to add serifs and/or hammerheads to the vertices of the mask pattern on the basis of a small number of simple rule checks. The first check is for the presence of an overlapping pattern at the next level. If this is not detected noting is added at the vertex in question. If some overlap is etected, a predefined search area (at the same mask level) is quickly scanned and, if another stripe is found to be located within a preset distance, serifs are added at the appropriate vertices. If no stripe was found, a second search area, further away, is scanned and if a neighbouring stripe is detected this time, larger serifs are added. If the second search also comes up empty, a hammerhead is added at the appropriate line end. The method may be refined by using additional searches, if so desired.
摘要翻译：描述了一种方法，其允许以低成本将各种光学邻近校正添加到掩模图案中，并且考虑到最小化当准备掩模版时稍后将需要的电子束曝光的数量。基本方法是基于少量简单的规则检查，将衬线和/或锤头添加到掩模图案的顶点。第一个检查是在下一个级别存在重叠模式。如果没有检测到，则在相关顶点添加注释。如果检测到一些重叠，则快速扫描预定义的搜索区域（处于相同的掩码级别），并且如果发现另一个条带位于预设的距离内，则在适当的顶点添加衬线。如果没有找到条带，则扫描更远的第二搜索区域，并且如果此时检测到相邻的条带，则添加更大的衬线。如果第二次搜索也是空的，那么在适当的行尾添加一个锤头。如果需要，可以通过使用其他搜索来改进该方法。

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