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21. 发明授权

US06889447B2 Method for drying a wafer and apparatus for performing the same 失效
标题翻译：干燥晶片的方法及其执行方法
公开(公告)号：US06889447B2
公开(公告)日：2005-05-10
申请号：US10464639
申请日：2003-06-19
申请人： Kwang-Wook Lee , Yong-Sun Ko , In-Seak Hwang
发明人： Kwang-Wook Lee , Yong-Sun Ko , In-Seak Hwang
IPC分类号： H01L21/304 , H01L21/00 , F26B5/04
CPC分类号： H01L21/67034
摘要： An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.
摘要翻译：用于物体（例如晶片）的瞬时减压加热和干燥装置包括减压室; 用于将减压室中的压力降低至大气压的真空泵; 安装在所述减压室内的用于干燥装载在所述干燥室中的物体的干燥室; 安装在所述干燥室的壁中的压力调节阀，其中当所述压力调节阀打开时，所述干燥室中的压力立即降低到所述减压室的压力; 以及用于加热干燥室的加热装置。在操作中，真空泵将减压室的压力降低至低于大气压，并且安装在干燥室的壁中的调压阀打开，从而瞬间将干燥室的压力降低到减压室的减压。

22. 发明授权

US07361547B2 Method for forming a capacitor for use in a semiconductor device 失效
标题翻译：用于形成用于半导体器件的电容器的方法
公开(公告)号：US07361547B2
公开(公告)日：2008-04-22
申请号：US11024981
申请日：2004-12-30
申请人： Kwang Wook Lee , In-Seak Hwang , Yong-Sun Ko , Ki-Hyun Hwang
发明人： Kwang Wook Lee , In-Seak Hwang , Yong-Sun Ko , Ki-Hyun Hwang
IPC分类号： H01L21/8242
CPC分类号： H01L28/84 , H01L27/10852 , H01L28/91
摘要： A method for forming a capacitor for use in a semiconductor device having electrode plugs surrounded by an insulating film and connected to underlying contact pads, includes sequentially forming an etch stop film and a mold oxide film on the insulating film and the electrode plugs, forming recesses in portions of the mold oxide film and the etching stopper film, the recesses exposing the electrode plugs, forming storage node electrodes in the recesses, filling the recesses in which the storage node electrodes are formed with an artificial oxide film, planarizing the storage node electrodes and the artificial oxide film so that the storage node electrodes are separated from one another, and selectively removing the mold oxide film and the artificial oxide film using a diluted hydrofluoric acid solution containing substantially no ammonium bifluoride.
摘要翻译：一种用于形成用于半导体器件的电容器的方法，所述半导体器件具有由绝缘膜包围并连接到下面的接触焊盘的电极塞，包括在所述绝缘膜和所述电极插塞上顺序地形成蚀刻停止膜和模制氧化物膜，在模具氧化膜和蚀刻停止膜的部分中，露出电极塞的凹部，在凹部中形成存储节点电极，用存储节点电极填充形成有人造氧化膜的凹部，使存储节点电极平坦化和人造氧化物膜，使得储存节点电极彼此分离，并且使用基本上不含氟化二氢铵的稀释的氢氟酸溶液选择性地除去模制氧化物膜和人造氧化物膜。

23. 发明申请

US20060287208A1 Methods of Forming Corrosion-Inhibiting Cleaning Compositions for Metal Layers and Patterns on Semiconductor Substrates 审中-公开
标题翻译：在半导体基板上形成金属层和图案的腐蚀抑制清洁组合物的方法
公开(公告)号：US20060287208A1
公开(公告)日：2006-12-21
申请号：US11467736
申请日：2006-08-28
申请人： Kwang-Wook Lee , In-Seak Hwang , Keum-Joo Lee , Chang-Lyong Song , Yong-Sun Ko , Kui-Jong Baek , Woong Han
发明人： Kwang-Wook Lee , In-Seak Hwang , Keum-Joo Lee , Chang-Lyong Song , Yong-Sun Ko , Kui-Jong Baek , Woong Han
IPC分类号： C11D7/32
CPC分类号： H01L21/02071 , C11D3/0084 , C11D7/3281 , C11D11/0047 , C23G1/106
摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.
摘要翻译：用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

24. 发明授权

US08053751B2 Phase-change semiconductor device and methods of manufacturing the same 有权
标题翻译：相变半导体器件及其制造方法
公开(公告)号：US08053751B2
公开(公告)日：2011-11-08
申请号：US12591531
申请日：2009-11-23
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L21/4763
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
摘要翻译：在相变半导体器件及其制造方法中，示例性方法可以包括在衬底上形成金属层图案，金属层图案包括露出衬底的一部分的开口，在其上形成蚀刻停止层金属层图案，开口的侧壁和衬底的暴露部分，蚀刻停止层形成为具有小于上部厚度阈值的厚度，以及减少至少一部分蚀刻停止层，蚀刻部分的蚀刻停止层与基底形成电连接。

25. 发明授权

US08048809B2 Polishing method using chemical mechanical slurry composition 有权
标题翻译：抛光方法采用化学机械浆料组成
公开(公告)号：US08048809B2
公开(公告)日：2011-11-01
申请号：US11898850
申请日：2007-09-17
申请人： Hyo-Jin Lee , Kyung-Hyun Kim , Yong-Sun Ko
发明人： Hyo-Jin Lee , Kyung-Hyun Kim , Yong-Sun Ko
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , H01L21/28123 , H01L21/3212
摘要： A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.
摘要翻译：浆料组合物包括约4.25至约18.5重量％的研磨剂，约80至约95重量％的去离子水和约0.05至约1.5重量％的添加剂。浆料组合物还可以包括表面活性剂。在使用浆料组合物的抛光方法中，可以快速抛光多晶硅层，并且可以抑制多晶硅层的凹陷和侵蚀。

26. 发明申请

US20100072446A1 Phase-change semiconductor device and methods of manufacturing the same 有权
标题翻译：相变半导体器件及其制造方法
公开(公告)号：US20100072446A1
公开(公告)日：2010-03-25
申请号：US12591531
申请日：2009-11-23
申请人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
发明人： Tae-Won Kim , Yong-Sun Ko , Ki-Jong Park , Kyung-Hyun Kim
IPC分类号： H01L45/00 , H01L21/768
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer on the metal layer pattern, a sidewall of the opening and the exposed portion of the substrate, the etch stop layer formed with a thickness less than an upper thickness threshold, and reducing at least a portion of the etch stop layer, the reduced portion of the etch stop layer forming an electrical connection with the substrate.
摘要翻译：在相变半导体器件及其制造方法中，示例性方法可以包括在衬底上形成金属层图案，金属层图案包括露出衬底的一部分的开口，在其上形成蚀刻停止层金属层图案，开口的侧壁和衬底的暴露部分，蚀刻停止层形成为具有小于上部厚度阈值的厚度，以及减少至少一部分蚀刻停止层，蚀刻部分的蚀刻停止层与基底形成电连接。

27. 发明申请

US20070057308A1 Electrode structure and method of manufacturing the same, phase-change memory device having the electrode structure and method of manufacturing the same 失效
标题翻译：电极结构及其制造方法，具有电极结构的相变存储器件及其制造方法
公开(公告)号：US20070057308A1
公开(公告)日：2007-03-15
申请号：US11484676
申请日：2006-07-12
申请人： Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： H01L29/76
CPC分类号： H01L45/143 , H01L21/76834 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1675
摘要： Example embodiments of the present invention relate to an electrode structure, a method of manufacturing the electrode structure, a phase-change memory device having the electrode structure and a method of manufacturing the phase-change memory device. The electrode structure may include a pad, a first insulation layer pattern, a second insulation layer pattern and/or an electrode. The first insulation layer pattern may be formed on the pad. The first insulation layer pattern may have a first opening that partially exposes the pad. The second insulation layer pattern may be formed on the first insulation layer pattern. The second insulation layer pattern may have a second opening connected to the first opening. The electrode may be formed on the pad and filling the first and the second openings.
摘要翻译：本发明的示例性实施例涉及电极结构，制造电极结构的方法，具有电极结构的相变存储器件和制造相变存储器件的方法。电极结构可以包括焊盘，第一绝缘层图案，第二绝缘层图案和/或电极。第一绝缘层图案可以形成在垫上。第一绝缘层图案可以具有部分地暴露垫的第一开口。第二绝缘层图案可以形成在第一绝缘层图案上。第二绝缘层图案可以具有连接到第一开口的第二开口。电极可以形成在垫上并填充第一和第二开口。

28. 发明授权

US07156722B2 Platen structure of polishing apparatus for processing semiconductor wafer and method for exchanging polishing pad affixed to the same 有权
标题翻译：用于处理半导体晶片的抛光装置的压板结构和用于更换固定在其上的抛光垫的方法
公开(公告)号：US07156722B2
公开(公告)日：2007-01-02
申请号：US11260902
申请日：2005-10-28
申请人： Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： B24B1/00
CPC分类号： B24B37/16
摘要： A platen structure of a polishing apparatus for semiconductor wafer and a method for exchanging a polishing pad affixed to the same are provided in which the polishing pad supported by the platen is exchanged with convenience within a short time. The platen structure of the polishing apparatus in which the polishing pad attached to the platen of the polishing apparatus comprises a pad plate to which the polishing pad for polishing a wafer is attached, and a platen body combined with the pad plate and having at least one vacuum hole formed thereto to provide a vacuum passage.
摘要翻译：提供了一种用于半导体晶片的抛光装置的压板结构和用于更换固定在其上的抛光垫的方法，其中在短时间内方便地更换由压板支撑的抛光垫。抛光装置的压板结构，其中安装在抛光装置的压板上的抛光垫包括一个垫板，用于抛光晶片的抛光垫被安装到该垫板上，以及压板体与该焊盘板组合并具有至少一个形成真空孔以提供真空通道。

29. 发明授权

US07144301B2 Method and system for planarizing integrated circuit material 有权
标题翻译：用于平面化集成电路材料的方法和系统
公开(公告)号：US07144301B2
公开(公告)日：2006-12-05
申请号：US10947458
申请日：2004-09-22
申请人： Kwang-Bok Kim , Jae-Kwang Choi , Yong-Sun Ko , Chang-Ki Hong , Kyung-Hyun Kim , Jae-Dong Lee
发明人： Kwang-Bok Kim , Jae-Kwang Choi , Yong-Sun Ko , Chang-Ki Hong , Kyung-Hyun Kim , Jae-Dong Lee
IPC分类号： B24B7/22
CPC分类号： C09G1/02 , B24B37/044 , B24B49/16 , B24B57/02
摘要： For planarizing an IC (integrate circuit) material, a first slurry is dispensed for a first planarization of the IC material using the first slurry, and a second slurry is dispensed for a second planarization of the IC material using the second slurry. The first and second slurries are different. For example, the first slurry is silica based for faster planarization during the first planarization. Thereafter, the second planarization is performed with the second slurry that is ceria based with higher planarity for attaining sufficient planarization of the IC material.
摘要翻译：为了平坦化IC（集成电路）材料，使用第一浆料分配第一浆料以使IC材料的第一平面化，并且使用第二浆料分配第二浆料以进行IC材料的第二平面化。第一和第二种浆料是不同的。例如，第一浆料是二氧化硅基，用于在第一平面化期间更快的平坦化。此后，利用二氧化铈为基础，以更高的平面度进行第二平坦化，以获得IC材料的充分平坦化。

30. 发明申请

US20060189152A1 Slurry composition, method of polishing an object and method of forming a contact in a semiconductor device using the slurry composition 审中-公开
标题翻译：浆料组合物，抛光物体的方法和使用该浆料组合物在半导体器件中形成接触的方法
公开(公告)号：US20060189152A1
公开(公告)日：2006-08-24
申请号：US11323356
申请日：2005-12-29
申请人： Ki-Hoon Jang , Yong-Sun Ko , Kyung-Hyun Kim
发明人： Ki-Hoon Jang , Yong-Sun Ko , Kyung-Hyun Kim
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： C09G1/02 , H01L21/3212
摘要： In a slurry composition preventing damage to an insulation layer, and uniformly polishing a metal layer, the slurry composition includes an acidic aqueous solution having a first pH and an anionic surfactant having a second pH lower than or equal to the first pH. Irregular polishing of the metal layer relative to a pattern density may be prevented and a contact having a uniform thickness may be formed using the slurry composition.
摘要翻译：在防止对绝缘层的损伤并均匀研磨金属层的浆料组合物中，浆料组合物包括具有第一pH的酸性水溶液和具有低于或等于第一pH的第二pH的阴离子表面活性剂。可以防止金属层相对于图案密度的不规则抛光，并且可以使用浆料组合物形成具有均匀厚度的接触。

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