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    • 23. 发明授权
    • Integrated circuit and methods of redistributing bondpad locations
    • 集成电路和重新分配键盘位置的方法
    • US07439169B2
    • 2008-10-21
    • US11445813
    • 2006-06-02
    • Charles M. Watkins
    • Charles M. Watkins
    • H01L21/00
    • H01L23/525H01L23/3114H01L2924/0002H01L2924/00
    • Integrated circuits and methods of redistributing bondpad locations are disclosed. In one implementation, a method of redistributing a bondpad location of an integrated circuit includes providing an integrated circuit comprising an inner lead bondpad. A first insulative passivation layer is formed over the integrated circuit. A bondpad-redistribution line is formed over the first insulative passivation layer and in electrical connection with the inner lead bondpad through the first insulative passivation layer. The bondpad-redistribution line includes an outer lead bondpad area. A second insulative passivation layer is formed over the integrated circuit and the bondpad-redistribution line. The second insulative passivation layer is formed to have a sidewall outline at least a portion of which is proximate to and conforms to at least a portion of the bondpad-redistribution line. Other aspects and implementations are contemplated.
    • 公开了重新分配焊盘位置的集成电路和方法。 在一个实现中,重新分配集成电路的接合板位置的方法包括提供包括内部引线接合板的集成电路。 在集成电路上形成第一绝缘钝化层。 在第一绝缘钝化层上形成键合 - 再分配线,并通过第一绝缘钝化层与内部引线键合电连接。 键盘 - 再分配线包括外部引线键合区域。 第二绝缘钝化层形成在集成电路和键合 - 再分配线上。 第二绝缘钝化层形成为具有侧壁轮廓,其侧面轮廓的至少一部分接近并符合键合 - 再分配线的至少一部分。 考虑了其他方面和实现。
    • 30. 发明授权
    • Specialized phosphors prepared by a multi-stage grinding and firing
sequence
    • 通过多级研磨和烧制顺序制备的专用荧光粉
    • US5635110A
    • 1997-06-03
    • US548088
    • 1995-10-25
    • Surjit S. ChadhaCharles M. Watkins
    • Surjit S. ChadhaCharles M. Watkins
    • C09K11/77F21K2/00H05B33/14C09K11/54C09K11/00
    • F21K2/00C09K11/773C09K11/7731C09K11/7734C09K11/7785C09K11/7787C09K11/7792H05B33/14
    • A multi-stage process for preparing a phosphor product includes the stages of selecting precursors of a dopant and a host lattice as the phosphor starting materials, grinding the starting materials in an initial grinding stage for an initial grinding time period to produce an initial ground material having a smaller particle size distribution than the starting materials, firing the initial ground material in an initial firing stage at an initial firing temperature for an initial firing time period to produce an initial fired material, grinding the initial fired material in an intermediate grinding stage for an intermediate grinding time period to produce an intermediate ground material having a smaller particle size than the initial fired material, wherein the intermediate grinding time period is substantially less than the initial grinding time period, firing the intermediate ground material in an intermediate firing stage at an intermediate firing temperature for an intermediate firing time to produce an intermediate fired material, wherein the intermediate firing temperature is substantially greater than the initial firing temperature, grinding the intermediate fired material in a final grinding stage for a final grinding time period to produce a final ground material having a smaller particle size than the intermediate fired material, and firing the final ground material in a final firing stage at a final firing temperature for a final firing time to produce a phosphor product, wherein the final firing time is substantially less than the intermediate firing time.