专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JP2010170111A Image forming method 有权
标题翻译：图像形成方法
公开(公告)号：JP2010170111A
公开(公告)日：2010-08-05
申请号：JP2009284575
申请日：2009-12-15
申请人： Canon Inc , キヤノン株式会社
发明人： AKIYAMA KAZUYOSHI , TAZAWA DAISUKE , UEDA SHIGENORI , OZAWA TOMOHITO
IPC分类号： G03G21/08 , G03G5/08
CPC分类号： G03G5/14704 , G03G5/08214 , G03G5/08221 , G03G5/08285 , G03G13/045
摘要： PROBLEM TO BE SOLVED: To provide an image forming method (electrophotographic image forming method), which enables high quality images to be formed over a long time period. SOLUTION: In the image forming method, an electrophotographic photoreceptor is used, the photoreceptor having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is equal to or more than 6.60×10 22 atoms/cm 3 . The peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够长时间形成高质量图像的图像形成方法（电子照相图像形成方法）。解决方案：在图像形成方法中，使用电子照相感光体，感光体具有由氢化非晶碳化硅形成的表面层，其中碳原子数与硅原子数之和的和表面层中的碳原子数为0.61以上且0.75以下，表面层中的硅原子的原子密度和原子密度之和等于或大于6.60× 10 22 原子/ cm 3 。预曝光光的峰值波长比图像曝光光的峰值波长短。版权所有（C）2010，JPO＆INPIT

22. 发明专利

JP2010043322A Vacuum vessel and method for forming deposited film 审中-公开
标题翻译：真空容器和形成沉积膜的方法
公开(公告)号：JP2010043322A
公开(公告)日：2010-02-25
申请号：JP2008207944
申请日：2008-08-12
申请人： Canon Inc , キヤノン株式会社
发明人： UEDA SHIGENORI , HOSOI KAZUTO , OHIRA JUN , YAMADA MOTOYA
IPC分类号： C23C16/458 , C23C16/24 , G03G5/08 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vacuum vessel and a method for forming a deposited film, by which image defects are reduced and the cost is reduced through the improvement of the vacuum treatment performance, product quality and the ratio of conforming articles. SOLUTION: The vacuum vessel has a vessel in which a base body holder provided with a cylindrical base body 101 is installed and which can be evacuated, and an exhaust means for discharging air from the inside of the vessel from its atmospheric state. The vacuum vessel has an exhaust port 106a, connected to the exhaust means, in the internal space of the base body holder. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种真空容器和沉积膜形成方法，通过提高真空处理性能，产品质量和一致物品的比例，减少图像缺陷并降低成本。解决方案：真空容器具有容器，其中设置有圆筒形基体101的基体保持器安装并且可以被抽真空，以及用于从容器的内部排出空气的排气装置。真空容器具有在基体保持器的内部空间中连接到排气装置的排气口106a。版权所有（C）2010，JPO＆INPIT

23. 发明专利

JP2010024494A Vacuum treatment apparatus 审中-公开
标题翻译：真空处理设备
公开(公告)号：JP2010024494A
公开(公告)日：2010-02-04
申请号：JP2008187183
申请日：2008-07-18
申请人： Canon Inc , キヤノン株式会社
发明人： YAMADA MOTOYA , UEDA SHIGENORI , HOSOI KAZUTO , OHIRA JUN
IPC分类号： C23C16/44 , H01L21/677 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus for forming a deposition film on a base body for reducing the cost through the enhancement of the product quality and the ratio of non-defective products by improving a spherical projection by suppressing the dust deposited on the base body while maintaining the strength of a chucking part for holding a base body holder for repeatedly conveying a heavy load in the vacuum treatment apparatus.
SOLUTION: The vacuum treatment apparatus has a chucking unit 102 for holding a recessed part of a base body holder 101 with its upper end having a recessed shape, and conveying it in a hanging manner in a decompression type base body conveying container. A plating film containing a fluorine-based resin is formed on a surface of the chucking part.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种用于在基体上形成沉积膜的真空处理装置，通过提高产品质量和通过改善球形突起的无缺陷产品的比例来降低成本，通过抑制灰尘沉积在基体上，同时保持用于保持基体保持器的夹紧部分的强度，以在真空处理装置中重复输送重负荷。解决方案：真空处理装置具有用于保持基体保持器101的凹部的夹持单元102，其上端具有凹形，并将其以悬挂方式输送到减压型基体输送容器中。在夹紧部的表面上形成含有氟系树脂的镀膜。版权所有（C）2010，JPO＆INPIT

24. 发明专利

JP2009204827A Manufacturing method for electrophotographic photoreceptor 审中-公开
标题翻译：电子光电子器件制造方法
公开(公告)号：JP2009204827A
公开(公告)日：2009-09-10
申请号：JP2008046253
申请日：2008-02-27
申请人： Canon Inc , キヤノン株式会社
发明人： YAMADA MOTOYA , UEDA SHIGENORI , TAZAWA DAISUKE
IPC分类号： G03G5/08 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for electrophotographic photoreceptor, capable of stably forming the electrophotographic photoreceptor which is markedly improved in the generation probability of consecutive spherical protrusions, without impairing the film characteristics.
SOLUTION: This manufacturing method for the electrophotographic photoreceptor is installed with a cylindrical base body in a decompressible reactor, introduces a layer-forming gas into the reactor by a gas inlet means, and decomposes the layer-forming gas by high-frequency electric power, to form a plurality of layers on the cylindrical base body, and the conductance of the gas inlet means, when the layer is formed having a maximum total flow rate per unit time of the layer-forming gas is made larger than that of the gas inlet means, when forming the other layers, at the formation of the plurality of layers.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够稳定地形成电子照相感光体的电子照相感光体的制造方法，其显着地提高了连续球形突起的产生概率，而不损害膜特性。解决方案：该电子照相感光体的制造方法在可减压反应器中安装有圆筒形基体，通过气体入口装置将成层气体引入反应器，并通过高频分解成层气体电力，以在圆筒形基体上形成多个层，并且当形成具有层形成气体的每单位时间的最大总流量的层时，气体入口装置的电导比大于当形成其它层时，气体入口装置形成多个层。版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2009188042A Semiconductor manufacturing system and specifying method of locating contaminants in semiconductor device manufactured by this system 审中-公开
标题翻译：半导体制造系统及本系统制造的半导体器件中的污染物定位方法
公开(公告)号：JP2009188042A
公开(公告)日：2009-08-20
申请号：JP2008024078
申请日：2008-02-04
申请人： Canon Inc , キヤノン株式会社
发明人： OHIRA JUN , UEDA SHIGENORI , HOSOI KAZUTO , YAMADA MOTOYA
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To quickly specifying locations containing contaminants in semiconductor devices manufactured by a semiconductor manufacturing system without deteriorating characteristics of semiconductor devices and enabling quick-startup of the manufacturing system and high yield ratios. SOLUTION: In a semiconductor manufacturing system containing at least a film depositing device, a metallic member existing at least in a manufacturing process space constituting the semiconductor manufacturing system can identify a location where a contaminant coming from the metallic member contained in a semiconductor device manufactured by the semiconductor manufacturing system generates in the semiconductor manufacturing system. Therefore, each metallic member contains any other specific element than a main component of the metallic member and the kinds and/or quantities of the specific elements are different. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：快速指定由半导体制造系统制造的半导体器件中含有污染物的位置，而不会劣化半导体器件的特性，并且能够快速启动制造系统和高屈服比。解决方案：在至少含有成膜装置的半导体制造系统中，至少存在于构成半导体制造系统的制造工艺空间中的金属构件可以识别来自包含在半导体中的金属构件的污染物的位置由半导体制造系统制造的器件在半导体制造系统中产生。因此，每个金属构件包含除了金属构件的主要成分之外的任何其它特定元素，并且特定元素的种类和/或数量不同。版权所有（C）2009，JPO＆INPIT

26. 发明专利

JP2008214659A Method for forming deposition film 审中-公开
标题翻译：形成沉积膜的方法
公开(公告)号：JP2008214659A
公开(公告)日：2008-09-18
申请号：JP2007049665
申请日：2007-02-28
申请人： Canon Inc , キヤノン株式会社
发明人： UEDA SHIGENORI , MURAYAMA HITOSHI , TAZAWA DAISUKE , KAWAMURA KUNIMASA
IPC分类号： C23C16/455 , G03G5/08 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for forming such a high-quality deposition film as to cause few image defects, when forming the deposition film which can be used for an electrophotographic photoreceptor.
SOLUTION: The method for forming the deposition film includes placing an electroconductive substrate in a reaction vessel which can be decompressed and subjecting the electroconductive substrate to the deposition-film-forming process which decomposes a source gas supplied into the reaction vessel with a high-frequency power and forms a silicon-based non-single-crystal film on the electroconductive substrate. The inner pressure in the deposition-film-forming process is 13.4 Pa or less. The deposition-film-forming process includes an inner-pressure changing process including an inner-pressure raising step and an inner-pressure lowering step. The inner-pressure changing process is a process of changing the inner pressure in the deposition-film-forming process in which the type and supply ratio of the source gas are constant.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：当形成可用于电子照相感光体的沉积膜时，提供一种形成这种高质量沉积膜以产生少量图像缺陷的方法。解决方案：用于形成沉积膜的方法包括将导电衬底放置在可以减压的反应容器中，并使导电衬底经受沉积膜形成过程，其中将沉积膜形成过程分解成供应到反应容器中的源气体高频功率，并在导电性基体上形成硅系非单晶膜。沉积膜形成工艺中的内部压力为13.4Pa以下。沉积膜形成工艺包括内压升高步骤和内压降低步骤的内压变化过程。内压变化过程是改变源气体的类型和供应比恒定的沉积膜形成过程中的内部压力的过程。版权所有（C）2008，JPO＆INPIT

27. 发明专利

JP2006163219A Electrophotographic photoreceptor 审中-公开
标题翻译：电子照相机
公开(公告)号：JP2006163219A
公开(公告)日：2006-06-22
申请号：JP2004357694
申请日：2004-12-10
申请人： Canon Inc , キヤノン株式会社
发明人： HOSOI KAZUTO , UEDA SHIGENORI , OHIRA JUN , ABE YUKIHIRO
IPC分类号： G03G5/08
摘要： PROBLEM TO BE SOLVED: To provide an electrophotographic photoreceptor having preferable adhesion and excellent durability even when used for a long period, and achieving higher electrostatic chargeability, reduction of an optical memory and increase of sensitivity even in a high-speed electrophotographic process. SOLUTION: The electrophotographic photoreceptor has a photoconductor layer comprising a non-single crystal material having at least silicon atoms as a base material on a conductive substrate, and a surface layer comprising a non-single crystal material layered on the photoconductor layer, and the photoreceptor is characterized in that: the surface layer comprises a first surface layer and a second surface layer; at least a part of the surface layer contains oxygen atoms and/or fluorine atoms; and the content distribution of oxygen atoms and/or fluorine atoms with respect to the entire amount of component atoms in the thickness direction of the surface layer has a peak in a region connecting the first surface layer and the second surface layer. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在长时间使用的情况下，也提供具有优选的附着力和优异的耐久性的电子照相感光体，并且即使在高速电子照相方法中也实现更高的静电电荷率，光学存储器的减少和灵敏度的增加。解决方案：电子照相感光体具有包含在导电性基板上至少具有硅原子作为基材的非单晶材料的感光体层，以及包含层叠在感光体层上的非单晶材料的表层，并且所述感光体的特征在于：所述表面层包括第一表面层和第二表面层; 表层的至少一部分含有氧原子和/或氟原子; 氧原子和/或氟原子相对于表层的厚度方向的全部量的含量分布在连接第一表面层和第二表面层的区域中具有峰值。版权所有（C）2006，JPO＆NCIPI

28. 发明专利

JP2005344151A Deposition film forming device and method 审中-公开
标题翻译：沉积膜形成装置和方法
公开(公告)号：JP2005344151A
公开(公告)日：2005-12-15
申请号：JP2004164348
申请日：2004-06-02
申请人： Canon Inc , キヤノン株式会社
发明人： OKAMURA TATSUJI , HASHIZUME JUNICHIRO , UEDA SHIGENORI , TSUCHIDA NOBUFUMI
IPC分类号： G03G5/08 , C23C16/24 , C23C16/507
摘要： PROBLEM TO BE SOLVED: To provide a deposition film forming device where unevenness in the characteristics of electrophotographic sensitive bodies is reduced, and uniform images can be stably provided at a low cost. SOLUTION: In the deposition film forming device where a plurality of cylindrical substrates arranged on the same circumference at the inside of a cylindrical body composing a part of a reaction vessel, a gaseous starting material introducing means and a plurality of high frequency electrodes arranged at the outside of the reaction vessel are provided, and high frequency electric power is applied to the high frequency electrodes and glow discharge is generated inside the reaction vessels, thus a gaseous starting material introduced into the reaction vessel is cracked, so as to form deposition films on the plurality cylindrical substrates, both the ends of the cylindrical body are made of cylindrical members formed of dielectrics, and also, the space between the cylindrical members formed of dielectrics is provided with a cylindrical member formed of a metallic member. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种沉积膜形成装置，其中电子照相感光体的特性不均匀性降低，并且可以以低成本稳定地提供均匀的图像。解决方案：在沉积膜形成装置中，在构成反应容器的一部分的圆筒体的内部布置有多个圆柱形基板的多个圆柱形基板，气态原料引入装置和多个高频电极设置在反应容器的外部，并且高频电力被施加到高频电极并且在反应容器内部产生辉光放电，因此引入反应容器的气态原料被破裂，从而形成多个圆筒形基板上的沉积膜，圆筒体的两端由电介质形成的圆柱形构件制成，并且由电介质形成的圆柱形构件之间的空间设置有由金属构件形成的圆柱形构件。版权所有（C）2006，JPO＆NCIPI

29. 发明专利

JP2005344150A Deposition film depositing device and deposition film depositing method 审中-公开
标题翻译：沉积膜沉积装置和沉积膜沉积方法
公开(公告)号：JP2005344150A
公开(公告)日：2005-12-15
申请号：JP2004164347
申请日：2004-06-02
申请人： Canon Inc , キヤノン株式会社
发明人： TSUCHIDA NOBUFUMI , UEDA SHIGENORI , HASHIZUME JUNICHIRO , OKAMURA TATSUJI
IPC分类号： G03G5/08 , C23C16/24 , C23C16/507
摘要： PROBLEM TO BE SOLVED: To provide a deposition film depositing device and a deposition film depositing method where the substrates to be treated can be uniformly subjected to plasma treatment, and image defects can be reduced.
SOLUTION: In the deposition film depositing device where a reaction vessel capable of evacuating, a plurality of cylindrical substrates arranged on the same circumference at the inside of the reaction vessel, a gaseous starting introduction means and a plurality of high frequency electrodes arranged at the outside of the reaction vessel are provided, and high frequency electric power is applied to the plurality of high frequency electrodes and glow discharge is generated inside the reaction vessel, thus a gaseous starting material introduced into the reaction vessel is cracked, so as to deposit deposition films on the plurality of cylindrical substrates, one or both the ends of a cylindrical body composing the reaction vessel are made of a metallic member, and the other part of the cylindrical body is made of a dielectric member.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供可以均匀地进行等离子体处理的待处理基板的沉积膜沉积装置和沉积膜沉积方法，并且可以降低图像缺陷。解决方案：在能够抽真空的反应容器的沉积膜沉积装置中，在反应容器内部布置在相同圆周上的多个圆柱形基板，气态起始引入装置和多个高频电极，其布置在反应容器的外部设置高频电力，在反应容器内产生辉光放电，导入反应容器内的气态原料破裂，从而在多个圆柱形基板上沉积沉积膜，构成反应容器的圆筒体的一端或两端由金属构件制成，圆柱体的另一部分由电介质构成。版权所有（C）2006，JPO＆NCIPI

30. 发明专利

JP2005148374A Method for manufacturing electrophotographic photoreceptor 审中-公开
标题翻译：制造电子照相光电子的方法
公开(公告)号：JP2005148374A
公开(公告)日：2005-06-09
申请号：JP2003385219
申请日：2003-11-14
申请人： Canon Inc , キヤノン株式会社
发明人： AOKI MAKOTO , UEDA SHIGENORI , OZAWA TOMOHITO
IPC分类号： G03G5/08
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an electrophotographic photoreceptor by which abnormal grown can be significantly decreased and both of high quality and a low cost can be achieved in a high level.
SOLUTION: The method aims to manufacture an electrophotographic photoreceptor having at least an adhesion layer and a light accepting layer formed on a conductive substrate by a plasma CVD method. The light accepting layer is formed under the following manufacture conditions by plasma CVD. They are: when a layered film and a substrate obtained by forming an adhesion layer on a glass substrate or on a substrate equivalent to the glass substrate, and a light-accepting layer formed to 5.0 μm thickness on the adhesion layer, are subjected to a micro-scratch test, the critical load for fracture ranges from 50 mN to 700 mN.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种电子照相感光体的制造方法，通过该方法可以显着降低异常生长，并且能够以高水平实现高质量和低成本。解决方案：该方法旨在通过等离子体CVD方法制造至少具有粘附层和在导电基板上形成的受光层的电子照相感光体。光接收层通过等离子体CVD在以下制造条件下形成。它们是：当通过在玻璃基板上或与玻璃基板相当的基板上形成粘合层而获得的层状膜和基板以及在粘合层上形成为厚度为5.0μm的受光层时，微划痕测试，断裂的临界载荷范围为50 mN至700 mN。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式