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21. 发明专利

JP2008152128A Electrophotographic apparatus 审中-公开
标题翻译：电子照相设备
公开(公告)号：JP2008152128A
公开(公告)日：2008-07-03
申请号：JP2006341576
申请日：2006-12-19
申请人： Canon Inc , キヤノン株式会社
发明人： TAKAGI SHINJI , UESUGI HIROTOSHI , ABE YUKIHIRO , OGAKI HARUNOBU
IPC分类号： G03G5/05 , G03G5/147
摘要： PROBLEM TO BE SOLVED: To suppress occurrence of image defects due to scratching of a photoreceptor in repeated use.
SOLUTION: An electrophotographic apparatus has a transfer separation mechanism by which a transfer material is separated from a photoreceptor, wherein a surface layer of the photoreceptor contains a polyarylate having a specific constitutional unit.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：抑制由于重复使用中的感光体的划伤而导致的图像缺陷的发生。解决方案：电子照相设备具有转印分离机构，通过该转印分离机构将转印材料与感光体分离，其中感光体的表面层含有具有特定结构单元的多芳基化合物。版权所有（C）2008，JPO＆INPIT

22. 发明专利

JP2006163219A Electrophotographic photoreceptor 审中-公开
标题翻译：电子照相机
公开(公告)号：JP2006163219A
公开(公告)日：2006-06-22
申请号：JP2004357694
申请日：2004-12-10
申请人： Canon Inc , キヤノン株式会社
发明人： HOSOI KAZUTO , UEDA SHIGENORI , OHIRA JUN , ABE YUKIHIRO
IPC分类号： G03G5/08
摘要： PROBLEM TO BE SOLVED: To provide an electrophotographic photoreceptor having preferable adhesion and excellent durability even when used for a long period, and achieving higher electrostatic chargeability, reduction of an optical memory and increase of sensitivity even in a high-speed electrophotographic process. SOLUTION: The electrophotographic photoreceptor has a photoconductor layer comprising a non-single crystal material having at least silicon atoms as a base material on a conductive substrate, and a surface layer comprising a non-single crystal material layered on the photoconductor layer, and the photoreceptor is characterized in that: the surface layer comprises a first surface layer and a second surface layer; at least a part of the surface layer contains oxygen atoms and/or fluorine atoms; and the content distribution of oxygen atoms and/or fluorine atoms with respect to the entire amount of component atoms in the thickness direction of the surface layer has a peak in a region connecting the first surface layer and the second surface layer. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在长时间使用的情况下，也提供具有优选的附着力和优异的耐久性的电子照相感光体，并且即使在高速电子照相方法中也实现更高的静电电荷率，光学存储器的减少和灵敏度的增加。解决方案：电子照相感光体具有包含在导电性基板上至少具有硅原子作为基材的非单晶材料的感光体层，以及包含层叠在感光体层上的非单晶材料的表层，并且所述感光体的特征在于：所述表面层包括第一表面层和第二表面层; 表层的至少一部分含有氧原子和/或氟原子; 氧原子和/或氟原子相对于表层的厚度方向的全部量的含量分布在连接第一表面层和第二表面层的区域中具有峰值。版权所有（C）2006，JPO＆NCIPI

23. 发明专利

JP2004193419A Vacuum processing method 审中-公开
公开(公告)号：JP2004193419A
公开(公告)日：2004-07-08
申请号：JP2002361028
申请日：2002-12-12
申请人： Canon Inc , キヤノン株式会社
发明人： ABE YUKIHIRO , KARAKI TETSUYA , KAWAMURA KUNIMASA
IPC分类号： G03G5/08 , C23C14/50 , C23C16/46 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing method which enhances the adhesion between a substrate and an in-furnace component except for the substrate; and a deposited film, and reduces defects of the deposited film on the substrate.
SOLUTION: The vacuum processing method comprises at least the step of conveying and installing the substrate on a substrate support in a reactor which can be depressurized, the heating step of heating the substrate, and the deposited film forming step of forming the deposited film on the substrate. The heating step comprises at least the first heating step and the second heating step, and in at least the first heating step, a heat conduction accelerating gas is fed into the reactor, and the heat conductivity due to the atmosphere between an exothermic body installed in the reactor, and the substrate and the substrate support is increased. In the second heating step, the heat conductivity due to the atmosphere is made lower than in the first heating step, to heat the substrate. Thus, the adhesion of the deposited film is enhanced to enhance an efficiency percentage of a semiconductor device, an electrophotographic sensitive body or the like having a superior characteristic.
COPYRIGHT: (C)2004,JPO&NCIPI

24. 发明专利

JP2003313667A Vapor-processing process 审中-公开
标题翻译：蒸汽加工过程
公开(公告)号：JP2003313667A
公开(公告)日：2003-11-06
申请号：JP2002122430
申请日：2002-04-24
申请人： Canon Inc , キヤノン株式会社
发明人： KAWAMURA KUNIMASA , NIINO HIROAKI , ABE YUKIHIRO
IPC分类号： G03G5/08 , C23C16/44 , C23C16/507
摘要： PROBLEM TO BE SOLVED: To enable a plasma treatment providing a film having excellent characteristics and uniformity in a vacuum processing process for forming a deposited film on a cylindrical substrate, and to reduce globular projections causing image defects such as white spots and black spots formed on images and unevenness in image density upon manufacturing an electrophotographic photoreceptor comprising multiple layers made of amorphous materials. SOLUTION: When forming the deposited film on the surface of the cylindrical substrate 101 while rotating it, the formation of the deposited-film is started by rotating the substrate 101 at a revolving speed of n1 [rpm] and generating a discharge with a power p1 [W]. After a predetermined time tp [min], the power is increased to p2 [W] which is larger than p1 [W], and after a predetermined time tn [min], the revolving speed is changed to n2 [rpm] which is slower than n1 [rpm]. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了能够提供在圆柱形基板上形成沉积膜的真空处理工艺中具有优异特性和均匀性的膜的等离子体处理，并且减少引起像白点和黑色的图像缺陷的球状突起在制造由非晶材料制成的多层的电子照相感光体时，在图像上形成的斑点和图像浓度的不均匀性。解决方案：当在圆筒形基板101的表面旋转时形成沉积膜时，通过以n1 [rpm]的转速旋转基板101开始沉积膜的形成，并产生放电功率p1 [W]。在预定时间tp [min]之后，功率增加到大于p1 [W]的p2 [W]，并且在预定时间tn [min]之后，转速变为n2 [rpm] 比n1 [rpm]。版权所有（C）2004，JPO

25. 发明专利

JP2003034872A Method and apparatus for vacuum treatment 审中-公开
标题翻译：用于真空治疗的方法和装置
公开(公告)号：JP2003034872A
公开(公告)日：2003-02-07
申请号：JP2001221764
申请日：2001-07-23
申请人： Canon Inc , キヤノン株式会社
发明人： MURAYAMA HITOSHI , AOKI MAKOTO , ABE YUKIHIRO
IPC分类号： G03G5/08 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To improve a vacuum treatment speed in addition to vacuum treatment characteristics, reproducibility, and uniformity, and to reduce a vacuum treatment cost.
SOLUTION: This vacuum treatment apparatus comprises installing several high-frequency electrodes 102 in a reaction vessel 101, and supplying high-frequency powers of different frequencies to the endpoints of the high-frequency electrodes 102 through matching boxes 104 and 116, from the first high-frequency power source 103, the second high-frequency power source 113, the third high-frequency power source 115, and the fourth high-frequency power source 117. A power value P1 of the highest electric power out of supplied high-frequency powers in a range of 10 MHz or more but 250 MHz or less, and a power value P2 of the second highest electric power, satisfy the relationship of 0.1≤P2/(P1+P2)≤0.9.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：除了真空处理特性，再现性和均匀性之外，还提高真空处理速度，并降低真空处理成本。解决方案：该真空处理装置包括在反应容器101中安装若干高频电极102，并通过匹配箱104和116从高频电极102的第一高频向高频电极102的端点提供不同频率的高频功率频率电源103，第二高频电源113，第三高频电源115和第四高频电源117.提供的高频电力中最高电力的功率值P1 在10MHz以上且250MHz以下的范围内，并且第二高功率的功率值P2满足0.1 <= P2 /（P1 + P2）<= 0.9的关系。

26. 发明专利

JP2003027245A Vacuum treatment method, and vacuum treatment device 审中-公开
标题翻译：真空处理方法和真空处理装置
公开(公告)号：JP2003027245A
公开(公告)日：2003-01-29
申请号：JP2001215387
申请日：2001-07-16
申请人： Canon Inc , キヤノン株式会社
发明人： MURAYAMA HITOSHI , ABE YUKIHIRO , AOKI MAKOTO
IPC分类号： G03G5/08 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To improve vacuum treatment rate, vacuum treatment characteristic, and the reproducibility of the vacuum treatment characteristic, to maintain the uniformity of the vacuum treatment characteristic to a very high level, and to reduce the vacuum treatment cost.
SOLUTION: In a method for treating a work by plasma formed by simultaneously feeding the high-frequency power of the frequencies different from each other to the same feed point on a same high-frequency electrode, the main transmitting direction of the high-frequency power transmitted on at least one high-frequency electrode is different from the main transmitting direction of the high-frequency power transmitted on the other high-frequency electrode, a plurality of high frequency powers include at least two high-frequency powers of the frequency of ≥10 MHz to ≤250 MHz, and for the high-frequency power having the highest power value and the second highest power value among the high-frequency powers in the frequency range, the power values P1 and P2 satisfy the inequalities 0.1≤P2/(P1+P2)≤0.9, where f1 and P1 are the frequency and the power value of the high-frequency power of the highest frequency, and f2 and P2 are the frequency and the power value of the high-frequency power of the second highest frequency.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提高真空处理率，真空处理特性和真空处理特性的再现性，将真空处理特性的均匀性保持在非常高的水平，并降低真空处理成本。解决方案：在通过同时将彼此不同的频率的高频功率同时馈送到同一高频电极上的相同馈电点的等离子体处理工件的方法中，高频功率的主发射方向在至少一个高频电极上传输的高频电力与在另一个高频电极上传输的高频电力的主发送方向不同，多个高频功率包括至少两个频率> = 10MHz至<= 250MHz，对于在频率范围内的高频功率中具有最高功率值和第二高功率值的高频功率，功率值P1和P2满足不等式0.1 < P2 /（P1 + P2）<= 0.9，其中f1和P1是最高频率的高频功率的频率和功率值，f2和P2是高频功率的频率和功率值的t 他排名第二高。

27. 发明专利

JP2003027244A Vacuum treatment device, and vacuum treatment method 审中-公开
标题翻译：真空处理装置和真空处理方法
公开(公告)号：JP2003027244A
公开(公告)日：2003-01-29
申请号：JP2001212195
申请日：2001-07-12
申请人： Canon Inc , キヤノン株式会社
发明人： ABE YUKIHIRO , TSUCHIDA NOBUFUMI , TAZAWA DAISUKE , AKIYAMA KAZUYOSHI
IPC分类号： G03G5/08 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To improve vacuum treatment characteristic, to perform the vacuum treatment of a work, in particular, a work of a large area in a very uniform manner, and to reduce the vacuum treatment cost.
SOLUTION: A vacuum treatment device 300 comprises a base body supporter 306 for installing a cylindrical base body 301 in a reaction vessel 302, a gas pipe 303 for introducing a raw gas in the reaction vessel 302, and an exhaust pipe 307 for exhausting the reaction vessel 302. The vacuum treatment device 300 further comprises a high-frequency power introducing means comprising a plurality of high-frequency power sources 308 and 317 for feeding the high-frequency power of the frequencies different from each other, a plurality of high-frequency electrodes 304 for introducing the high-frequency power fed from the high-frequency power sources 308 and 317 in a reaction space of the vessel 302, and a power branching plate 313 in which the high-frequency power respectively fed from the high-frequency power sources 308 and 317 is introduced in a synthesized manner, and the synthesized high-frequency power is respectively distributed. The power branching plate 313 is formed in a flat plate-like shape.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了改善真空处理特性，以非常均匀的方式进行工件，特别是大面积的工作的真空处理，并降低真空处理成本。解决方案：真空处理装置300包括用于将圆筒形基体301安装在反应容器302中的基体支撑件306，用于将反应容器302中的原料气体引入的气体管303和用于排出反应的排气管307 真空处理装置300还包括高频功率引入装置，其包括用于馈送彼此不同的频率的高频功率的多个高频电源308和317，多个高频用于将从高频电源308和317馈送的高频电力引入容器302的反应空间的电极304和分别从高频电源分别供给的高频功率的功率分支板313 以合成的方式引入源308和317，分别分配合成的高频功率。功率分支板313形成为平板状。

28. 发明专利

JP2013151714A Deposited film forming method 审中-公开
标题翻译：沉积膜形成方法
公开(公告)号：JP2013151714A
公开(公告)日：2013-08-08
申请号：JP2012012122
申请日：2012-01-24
申请人： Canon Inc , キヤノン株式会社
发明人： OHIRA JUN , ABE YUKIHIRO , UENO TAKANORI
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a deposited film forming method capable of suppressing influence to characteristics of a deposited film by back diffusion to the side of a deposition container of a cleaning gas, and further capable of properly determining an end point of a cleaning process in the deposition container.SOLUTION: A deposited film forming method repeats a deposited film formation step and a cleaning step of removing a by-product deposited in a deposition container and an exhaust piping 1122 using a cleaning gas introduced from a gas introduction means 1124, after taking out a base 1112 with a deposited film formed thereon from the deposition container 1101. A cleaning gas introduction means provides at least one reaction detection means 1128 at the deposition container rather than a part connected with the exhaust piping. The deposited film formation step forms the deposited film while regulating introduction conditions of the cleaning gas introduced from the cleaning gas introduction means according to a reaction detection situation of the reaction detection means. The cleaning step decides completion according to the reaction detection situation of the reaction detection means.
摘要翻译：要解决的问题：提供一种沉积膜形成方法，其能够通过向清洁气体的沉积容器的侧面的反向扩散来抑制对沉积膜的特性的影响，并且还能够适当地确定清洁过程的终点在沉积容器中。沉积膜形成方法重复沉积膜形成步骤和清洁步骤，其使用从气体引入装置1124引入的清洁气体除去沉积在沉积容器中的副产物和排气管道1122，在从沉积容器1101取出其上形成有沉积膜的基底1112之后。清洁气体引入装置在沉积容器上提供至少一个反应检测装置1128，而不是与排气管道连接的部分。沉积膜形成步骤根据反应检测装置的反应检测情况，调节从清洗气体引入装置引入的清洗气体的导入条件，形成沉积膜。清洗步骤根据反应检测装置的反应检测情况决定完成。

29. 发明专利

JP2010168611A Deposited film forming device 审中-公开
标题翻译：沉积膜形成装置
公开(公告)号：JP2010168611A
公开(公告)日：2010-08-05
申请号：JP2009010712
申请日：2009-01-21
申请人： Canon Inc , キヤノン株式会社
发明人： OKAMURA TATSUJI , ABE YUKIHIRO , HASHIZUME JUNICHIRO
IPC分类号： C23C16/509 , G03G5/08
摘要： PROBLEM TO BE SOLVED: To provide a deposited film forming device capable of uniformly and stably forming a functional deposited film of a large area, and to provide, particularly, a deposited film forming device capable of producing a high-quality electrophotographic photosensitive element excellent in charging properties inexpensively in high productivity.
SOLUTION: In the deposited film forming device 100 where a raw material gas and discharge energy are applied to the inside of a reaction vessel 101 in which a high frequency electrode also serves as a side wall so as to form a deposited film on the surface of a substrate, an exhaust part 109 connected to the exhaust system is provided at a part of the side wall of the reaction vessel 101, and a screen member 111 having a potential same as that of a high frequency electrode is provided in such a manner that the exhaust part 109 is made into a blind spot from the substrate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够均匀且稳定地形成大面积的功能性沉积膜的沉积膜形成装置，并且特别提供能够生产高质量电子照相感光体的沉积膜形成装置元件的成本优异，成本低廉。解决方案：在沉积膜形成装置100中，其中将原料气体和排出能量施加到反应容器101的内部，其中高频电极也用作侧壁以形成沉积膜基板的表面，与排气系统连接的排气部109设置在反应容器101的侧壁的一部分，并且具有与高频电极相同的电位的屏幕部件111 排气部109从基板制成盲点的方式。版权所有（C）2010，JPO＆INPIT

30. 发明专利

JP2010077500A Method for forming deposited film and method for manufacturing amorphous silicone photoreceptor 审中-公开
标题翻译：形成沉积膜的方法和制造非晶硅光电子器件的方法
公开(公告)号：JP2010077500A
公开(公告)日：2010-04-08
申请号：JP2008247432
申请日：2008-09-26
申请人： Canon Inc , キヤノン株式会社
发明人： OKAMURA TATSUJI , ABE YUKIHIRO
IPC分类号： C23C16/24 , C23C16/44 , G03G5/08 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method by which a functional deposited film having a large area can be stably formed in the thickness direction, especially a method by which a high quality electrophotographic photoreceptor having excellent electrification properties is manufactured inexpensively with a good productivity.
SOLUTION: A method for forming a deposited film includes arranging a base body in a reaction vessel which can be vacuum sealed and forming the deposited film on the base body by decomposing a raw material gas containing silicon atom by a high frequency power. In the method, a gas containing chlorine trifluoride is supplied into an exhaust tube connecting the reaction vessel and an exhaust means during a process for forming the deposited film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种方法，通过该方法可以在厚度方向上稳定地形成具有大面积的功能性沉积膜，特别是一种方法是廉价地制造具有优异的起电特性的高质量电子照相感光体，良好的生产力。解决方案：一种用于形成沉积膜的方法，包括将基体布置在可被真空密封的反应容器中，并通过高频功率分解含有硅原子的原料气体将沉积膜形成在基体上。在该方法中，在形成沉积膜的过程中，将含有三氟化氯的气体供给到连接反应容器和排气装置的排气管中。版权所有（C）2010，JPO＆INPIT

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