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21. 发明申请

US20050146929A1 Nonvolatile semiconductor memory device with scalable two transistor memory cells 有权
标题翻译：具有可伸缩双晶体管存储单元的非易失性半导体存储器件
公开(公告)号：US20050146929A1
公开(公告)日：2005-07-07
申请号：US10976626
申请日：2004-10-29
申请人： Woo-Yeong Cho , Byung-Gil Choi
发明人： Woo-Yeong Cho , Byung-Gil Choi
IPC分类号： G11C16/04 , G11C11/34 , G11C11/404 , G11C16/02 , H01L27/115
CPC分类号： G11C11/404
摘要： A nonvolatile memory device includes a bit line, a pair of data lines and a plurality of scalable two transistor memory (STTM) cells. The memory cells are arranged between a pair of datalines so as to share the bit line. The memory device further includes a data line selection circuit and a sense amplification circuit. The data line selection circuit selects one of a pair of data lines, and the sense amplification circuit senses and amplifies a voltage difference between the bit line and the selected data line. Operation speed is increased, while improving device cell array structure.
摘要翻译：非易失性存储器件包括位线，一对数据线和多个可伸缩双晶体管存储器（STTM）单元。存储单元布置在一对数据之间，以便共享位线。存储器件还包括数据线选择电路和读出放大电路。数据线选择电路选择一对数据线之一，并且感测放大电路感测并放大位线与所选数据线之间的电压差。操作速度提高，同时提高器件单元阵列结构。

22. 发明授权

US08040716B2 Controlling a variable resistive memory wordline switch 有权
标题翻译：控制可变电阻式存储器字线开关
公开(公告)号：US08040716B2
公开(公告)日：2011-10-18
申请号：US12613136
申请日：2009-11-05
申请人： Byung-Gil Choi , Woo-Yeong Cho
发明人： Byung-Gil Choi , Woo-Yeong Cho
IPC分类号： G11C11/00
CPC分类号： G11C13/0028 , G11C8/08 , G11C8/14 , G11C13/00 , G11C13/0004 , G11C2213/72
摘要： A method of controlling the voltage of a sub-wordline in a variable resistive memory device includes switchably passing a voltage from a main wordline to the sub-wordline, and substantially blocking forward current flow from the sub-wordline to a variable resistive memory cell of the device.
摘要翻译：一种控制可变电阻存储器件中的子字线电压的方法包括将电压从主字线切换到通过子字线，并且基本上阻止从副字线到可变电阻存储器单元的正向电流装置。

23. 发明授权

US07885098B2 Non-volatile phase-change memory device and method of reading the same 有权
标题翻译：非易失性相变存储器件及其读取方法
公开(公告)号：US07885098B2
公开(公告)日：2011-02-08
申请号：US11316017
申请日：2005-12-23
申请人： Yu-Hwan Ro , Woo-Yeong Cho , Byung-Gil Choi
发明人： Yu-Hwan Ro , Woo-Yeong Cho , Byung-Gil Choi
IPC分类号： G11C11/00
CPC分类号： G11C5/145 , G11C5/143 , G11C7/12 , G11C11/5678 , G11C13/0004 , G11C13/0026 , G11C13/004 , G11C2013/0057 , G11C2213/72
摘要： In one aspect, a non-volatile semiconductor memory device includes a phase phase-change memory cell array including a plurality of word lines, a plurality of bit lines, and a plurality of phase-change memory cells, where each the phase-change memory cells includes a phase-change resistive element and a diode connected in series between a word line and a bit line among the plurality of word lines and bit lines of the phase-change memory cell array. The memory device of this aspect further includes a sense node which is selectively connected to a bit line of the phase-change memory cell array, a boosting circuit which generates a boosted voltage which is greater than an internal power supply voltage, a pre-charge and biasing circuit which is driven by the boosted voltage to pre-charge and bias the sense node, and a sense amplifier connected to the sense node. The boosted voltage may be equal to or greater than a sum of the internal power supply voltage and a threshold voltage of the diode of each phase-change memory cell.
摘要翻译：一方面，一种非易失性半导体存储器件包括：相位相变存储单元阵列，包括多个字线，多个位线和多个相变存储器单元，其中每个相变存储器单元包括在相变存储单元阵列的多个字线和位线之间串联连接在字线和位线之间的相变电阻元件和二极管。该方面的存储装置还包括有选择地连接到相变存储单元阵列的位线的感测节点，产生大于内部电源电压的升压电压的升压电路，预充电以及由升压电压驱动以对感测节点进行预充电和偏置的偏置电路，以及连接到感测节点的读出放大器。升压电压可以等于或大于内部电源电压和每个相变存储单元的二极管的阈值电压之和。

24. 发明授权

US07796425B2 Control of set/reset pulse in response to peripheral temperature in PRAM device 有权
标题翻译：根据PRAM器件的外围温度控制置位/复位脉冲
公开(公告)号：US07796425B2
公开(公告)日：2010-09-14
申请号：US11985975
申请日：2007-11-19
申请人： Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
发明人： Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
IPC分类号： G11C11/00 , G11C7/04 , G11C11/4193 , G11C11/4197
CPC分类号： G11C13/0069 , G11C7/04 , G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C2013/0078
摘要： A driver circuit for a PRAM (phase-change random access memory) device includes a write driver that generates a set/reset current in response to a set/reset pulse. In addition, a temperature compensator controls a pulse width of the set/reset pulse in response to a peripheral temperature of the PRAM device. For example, the temperature compensator maintains the pulse width to be substantially constant irrespective of the peripheral temperature. In another example, the temperature compensator decreases the pulse width for higher peripheral temperature.
摘要翻译：用于PRAM（相变随机存取存储器）装置的驱动器电路包括响应于置位/复位脉冲而产生置位/复位电流的写入驱动器。此外，温度补偿器响应于PRAM器件的外围温度来控制置位/复位脉冲的脉冲宽度。例如，温度补偿器将脉冲宽度保持为基本恒定，而与外围温度无关。在另一个例子中，温度补偿器降低脉冲宽度，以提高外围温度。

25. 发明授权

US07633788B2 Variable resistive memory wordline switch 有权
标题翻译：可变电阻存储器字线开关
公开(公告)号：US07633788B2
公开(公告)日：2009-12-15
申请号：US11750802
申请日：2007-05-18
申请人： Byung-Gil Choi , Woo-Yeong Cho
发明人： Byung-Gil Choi , Woo-Yeong Cho
IPC分类号： G11C11/00
CPC分类号： G11C13/0028 , G11C8/08 , G11C8/14 , G11C13/00 , G11C13/0004 , G11C2213/72
摘要： A variable resistive memory device includes a main wordline, a wordline connecting switch in signal communication with the main wordline, a sub-wordline in signal communication with the wordline connecting switch, and a variable resistive memory cell having a variable resistance in signal communication with a first terminal of a switching element, a second terminal of the switching element disposed in signal communication with the sub-wordline; and a method of controlling the voltage of a sub-wordline in a variable resistive memory device includes switchably passing a voltage from a main wordline to the sub-wordline, and substantially blocking forward current flow from the sub-wordline to a variable resistive memory cell of the device.
摘要翻译：一种可变电阻式存储器件包括主字线，与主字线信号通信的字线连接开关，与字线连接开关信号通信的子字线，以及具有可变电阻的可变电阻存储器单元，开关元件的第一端子，与所述副字线信号通信设置的所述开关元件的第二端子; 并且一种控制可变电阻存储器件中的子字线的电压的方法包括：可切换地将电压从主字线传递到子字线，并且基本上阻挡从子字线到可变电阻存储器单元的正向电流的设备。

26. 发明授权

US07447092B2 Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature 有权
标题翻译：写入驱动电路，用于根据环境温度控制施加到相变存储器的写入电流
公开(公告)号：US07447092B2
公开(公告)日：2008-11-04
申请号：US11079198
申请日：2005-03-15
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C7/04
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied TO Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the phase change material (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到TO相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持在较高电阻状态下的PCM的电阻与相变材料（PCM）的电阻在较低电阻状态下的比率恒定或基本恒定，而与环境温度无关。可以通过增加，减少或保持复位电流和/或设定电流来保持该比率。

27. 发明申请

US20080212362A1 Control of set/reset pulse in response to peripheral temperature in pram device 有权
标题翻译：根据婴儿车装置中的外围温度控制设定/复位脉冲
公开(公告)号：US20080212362A1
公开(公告)日：2008-09-04
申请号：US11985975
申请日：2007-11-19
申请人： Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
发明人： Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0069 , G11C7/04 , G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C2013/0078
摘要： A driver circuit for a PRAM (phase-change random access memory) device includes a write driver that generates a set/reset current in response to a set/reset pulse. In addition, a temperature compensator controls a pulse width of the set/reset pulse in response to a peripheral temperature of the PRAM device. For example, the temperature compensator maintains the pulse width to be substantially constant irrespective of the peripheral temperature. In another example, the temperature compensator decreases the pulse width for higher peripheral temperature.
摘要翻译：用于PRAM（相变随机存取存储器）装置的驱动器电路包括响应于置位/复位脉冲而产生置位/复位电流的写入驱动器。此外，温度补偿器响应于PRAM器件的外围温度来控制置位/复位脉冲的脉冲宽度。例如，温度补偿器将脉冲宽度保持为基本恒定，而与外围温度无关。在另一个例子中，温度补偿器降低脉冲宽度，以提高外围温度。

28. 发明授权

US07315469B2 Control of set/reset pulse in response to peripheral temperature in PRAM device 有权
标题翻译：根据PRAM器件的外围温度控制置位/复位脉冲
公开(公告)号：US07315469B2
公开(公告)日：2008-01-01
申请号：US11124341
申请日：2005-05-06
申请人： Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
发明人： Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
IPC分类号： G11C11/00 , G11C7/04 , G11C7/22
CPC分类号： G11C13/0069 , G11C7/04 , G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C2013/0078
摘要： A drive circuit for a PRAM (phase-change random access memory) device includes a write driver that generates a set/reset current in response to a set/reset pulse. In addition, a temperature compensator controls a pulse width of the set/reset pulse in response to a peripheral temperature of the PRAM device. For example, the temperature compensator maintains the pulse width to be substantially constant irrespective of the peripheral temperature. In another example, the temperature compensator decreases the width for higher peripheral temperature.
摘要翻译：用于PRAM（相变随机存取存储器）装置的驱动电路包括响应于置位/复位脉冲而产生置位/复位电流的写入驱动器。此外，温度补偿器响应于PRAM器件的外围温度来控制置位/复位脉冲的脉冲宽度。例如，温度补偿器将脉冲宽度保持为基本恒定，而与外围温度无关。在另一个例子中，温度补偿器减小了较高外围温度的宽度。

29. 发明授权

US06885602B2 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor 有权
标题翻译：控制施加到相变存储器件的写入电流和写入驱动器电路的编程方法
公开(公告)号：US06885602B2
公开(公告)日：2005-04-26
申请号：US10921797
申请日：2004-08-20
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C13/00 , G11C13/02 , G11C16/02 , H01L27/105 , H01L45/00 , G11C7/04
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the Phase-change Memory (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing, or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持在较高电阻状态下的PCM的电阻与相位变化存储器（PCM）的电阻在较低电阻状态下的比率恒定或基本上恒定，而与环境温度无关。可以通过增加，减少或保持相同的复位电流和/或设定电流来维持该比率。

30. 发明申请

US20050041464A1 PROGRAMMING METHOD OF CONTROLLING THE AMOUNT OF WRITE CURRENT APPLIED TO PHASE CHANGE MEMORY DEVICE AND WRITE DRIVER CIRCUIT THEREFOR 有权
标题翻译：控制适用于相变存储器件和写驱动电路的写电流量的编程方法
公开(公告)号：US20050041464A1
公开(公告)日：2005-02-24
申请号：US10921797
申请日：2004-08-20
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C13/00 , G11C13/02 , G11C16/02 , H01L27/105 , H01L45/00 , G11C11/00
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the PCM in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing, or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持PCM在较高电阻状态下的电阻与PCM在较低电阻状态下的电阻的比率恒定或基本恒定，而与环境温度无关。可以通过增加，减少或保持相同的复位电流和/或设定电流来维持该比率。

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