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    • 23. 发明授权
    • Acoustic semiconductor device
    • 声学半导体器件
    • US08648431B2
    • 2014-02-11
    • US13220116
    • 2011-08-29
    • Kazuhide AbeTadahiro SasakiAtsuko IidaKazuhiko ItayaTakashi Kawakubo
    • Kazuhide AbeTadahiro SasakiAtsuko IidaKazuhiko ItayaTakashi Kawakubo
    • H01L29/84
    • H03J3/20H03B5/326H03H9/02566
    • According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.
    • 根据一个实施例,声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的,并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元,并且输入电信号进入声共振单元。
    • 24. 发明授权
    • Power amplifier
    • 功率放大器
    • US08324707B2
    • 2012-12-04
    • US13050545
    • 2011-03-17
    • Tadahiro SasakiKazuhide AbeAtsuko IidaKazuhiko Itaya
    • Tadahiro SasakiKazuhide AbeAtsuko IidaKazuhiko Itaya
    • H01L27/105
    • H01L27/088H01L21/823493H01L27/0207H01L27/0922H01L29/41758H01L29/4238H01L29/78
    • According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
    • 根据实施例,功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。 第一生长环栅极结构由半导体层限制并进行功率放大操作。 多个第二生长环形栅极结构由半导体层限制,并且以周围的方式围绕第一生长环栅极结构相邻布置。 当第一生长环栅极结构执行功率放大操作时,通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构,由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离 结构从周围部分。