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21. 发明申请

US20100173439A1 Methods and systems of transferring a substrate to minimize heat loss 有权
标题翻译：转移衬底以最小化热损失的方法和系统
公开(公告)号：US20100173439A1
公开(公告)日：2010-07-08
申请号：US12319223
申请日：2009-01-03
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry WU , Simon Zhu , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry WU , Simon Zhu , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L31/18
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67173 , H01L21/67196 , H01L21/67207 , H01L21/67706 , H01L21/67748 , H01L21/67754 , Y10S414/135
摘要： A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：提供了一种在过程模块或加载锁定站之间传送一个或多个基板同时最小化热损失的方法。在一些实施例中，该方法包括以下步骤：识别存在于初始处理位置P1的衬底S1的目的地位置D1; 如果目的地位置D1被基板S2占用，则将基板S1保持在初始处理位置P1; 并且如果目的地位置D1可用，则将基板S1传送到目的地位置D1。根据另外的实施例，该方法在用于处理基板的系统上进行，该系统包括两个或更多个处理模块，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

22. 发明授权

US07501344B2 Formation of boride barrier layers using chemisorption techniques 有权
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US07501344B2
公开(公告)日：2009-03-10
申请号：US11739549
申请日：2007-04-24
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process, and exposing the substrate to the boron-containing compound, the tungsten precursor, and ammonia to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. In one example, the tungsten precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和钨前体以形成第一含硼化物层，以及在第二顺序化学吸附过程期间将所述衬底暴露于含硼化合物，钨前体和氨以在第一含硼化物层上形成第二含硼化物层。在一个实例中，钨前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

23. 发明申请

US20050153564A1 Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control 有权
标题翻译：用于前馈和反馈过程控制的集成相位角和光学关键尺寸测量计量
公开(公告)号：US20050153564A1
公开(公告)日：2005-07-14
申请号：US10754321
申请日：2004-01-09
申请人： Alfred Mak , Yung-Hee Lee , Cynthia Brooks , Melisa Buie , Turgut Sahin , Jian Ding
发明人： Alfred Mak , Yung-Hee Lee , Cynthia Brooks , Melisa Buie , Turgut Sahin , Jian Ding
IPC分类号： G03F1/00 , H01L21/302 , H01L21/461
CPC分类号： G03F1/32 , G03F1/30
摘要： Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.
摘要翻译：用于控制关键尺寸和监测光掩模相移角的方法和装置。晶圆处理之前和晶片处理后的关键尺寸测量数据由集成计量工具收集，以调整工艺配方，以确定临界尺寸是否在规范中，并确定是否需要额外的蚀刻。晶圆处理后的基板测量的相移角和均匀度由集成计量工具收集，以确定相移角及其均匀性是否在规范中。如果需要额外的蚀刻，则实时处理配方调整和确定允许过程控制的紧固。相移角和均匀性监测允许在线筛选相移光掩模。

24. 发明申请

US20050067103A1 Interferometer endpoint monitoring device 审中-公开
标题翻译：干涉仪终点监测装置
公开(公告)号：US20050067103A1
公开(公告)日：2005-03-31
申请号：US10672420
申请日：2003-09-26
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： C23F1/00 , G03F1/08 , H01J37/32
CPC分类号： G03F1/80 , H01J37/321 , H01J37/32935
摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
摘要翻译：光掩模蚀刻室，其包括设置在室内的基板支撑构件。衬底支撑构件被配置为支撑光掩模衬底。腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

25. 发明授权

US06309713B1 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition 失效
公开(公告)号：US06309713B1
公开(公告)日：2001-10-30
申请号：US08884811
申请日：1997-06-30
申请人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
发明人： Alfred Mak , Ling Chen , David C. Smith , Mei Chang , Steve Ghanayem
IPC分类号： H05H124
CPC分类号： H01L21/76843 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L29/4941 , H01L29/66583
摘要： A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

26. 发明授权

US06251190B1 Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构
公开(公告)号：US06251190B1
公开(公告)日：2001-06-26
申请号：US09657880
申请日：2000-09-08
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C1600
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

27. 发明授权

US5316278A Clamping ring apparatus for processing semiconductor wafers 失效
标题翻译：用于处理半导体晶圆的夹紧环装置
公开(公告)号：US5316278A
公开(公告)日：1994-05-31
申请号：US947212
申请日：1992-09-18
申请人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
发明人： Semyon Sherstinsky , Mei Chang , Charles C. Harris , Alfred Mak , James F. Roberts , Simon W. Tam , Wen T. Chang
IPC分类号： H01L21/687 , B25B1/00
CPC分类号： H01L21/68721 , Y10S269/903
摘要： An improved clamping ring apparatus is disclosed comprising a clamping ring means for yieldably engaging a generally circular semiconductor wafer to peripherally clamp the wafer to a support pedestal to provide a peripheral seal between the wafer and the surface of the pedestal facing the wafer, adjacent the generally circular end edge of the wafer by providing a central generally circular opening in the clamping ring and a series of slots which radially extend outwardly from the central opening in the clamping ring means to thereby divide the inner portion of the clamping ring means into a series of yieldable fingers inwardly extending toward the central opening in the clamping ring means.In one embodiment, the sidewalls of the slots are slanted with respect to the planar surface of the clamping ring means at an angle sufficient, with respect to the thickness of the clamping ring means and the width of the slot,, to prevent a ray or a particle from a plasma, traveling in a direction perpendicular to the plane of the surface of the clamping ring means from striking surfaces underlying the clamping ring means, through the slot.
摘要翻译：公开了一种改进的夹紧环装置，其包括夹紧环装置，用于可屈服地接合大致圆形的半导体晶片以将晶片周边夹持到支撑基座，以在晶片与面对晶片的基座的表面之间提供周边密封，通过在夹紧环中提供中心大致圆形的开口，以及从夹紧环装置中的中心开口径向向外延伸的一系列槽，从而将夹紧环装置的内部分成一系列可伸缩的手指向内延伸朝向夹紧环装置中的中心开口。在一个实施例中，槽的侧壁相对于夹紧环装置的平坦表面以相对于夹紧环装置的厚度和槽的宽度足够的角度倾斜以防止光线或来自等离子体的颗粒通过狭槽从垂直于夹紧环装置的表面的平面的方向通过夹紧环装置下方的冲击表面行进。

28. 发明授权

US08367565B2 Methods and systems of transferring, docking and processing substrates 有权
标题翻译：转移，对接和处理基材的方法和系统
公开(公告)号：US08367565B2
公开(公告)日：2013-02-05
申请号：US12973736
申请日：2010-12-20
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/00
CPC分类号： B05D3/04 , C23C16/44 , H01L21/673 , H01L21/677
摘要： In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.
摘要翻译：根据本文描述的一些实施例，提供了用于转移衬底的方法。该方法包括将一个或多个基底装载到一个或多个移动室的相应移动室中。移动室可在与两个或更多个处理模块相邻定位的第一轨上移动。每个移动室被构造成维持指定的气体状态。相应的移动室沿着第一轨道移动。相应的移动室被对接到两个或更多个处理模块的相应处理模块。一个或多个基板中的至少一个从相应的移动室传送到相应的处理模块。

29. 发明授权

US08110511B2 Methods and systems of transferring a substrate to minimize heat loss 有权
标题翻译：转移衬底以最小化热损失的方法和系统
公开(公告)号：US08110511B2
公开(公告)日：2012-02-07
申请号：US12319223
申请日：2009-01-03
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Simon Zhu , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry Wu , Simon Zhu , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/00
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67173 , H01L21/67196 , H01L21/67207 , H01L21/67706 , H01L21/67748 , H01L21/67754 , Y10S414/135
摘要： A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：提供了一种在过程模块或加载锁定站之间传送一个或多个基板同时最小化热损失的方法。在一些实施例中，该方法包括以下步骤：识别存在于初始处理位置P1的衬底S1的目的地位置D1; 如果目的地位置D1被基板S2占用，则将基板S1保持在初始处理位置P1; 并且如果目的地位置D1可用，则将基板S1传送到目的地位置D1。根据另外的实施例，该方法在用于处理基板的系统上进行，该系统包括两个或更多个处理模块，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

30. 发明申请

US20110217469A1 Methods and Systems of Transferring, Docking and Processing Substrates 有权
标题翻译：转移，对接和处理基板的方法和系统
公开(公告)号：US20110217469A1
公开(公告)日：2011-09-08
申请号：US12973736
申请日：2010-12-20
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/673 , B05D3/04 , C23C16/44
CPC分类号： B05D3/04 , C23C16/44 , H01L21/673 , H01L21/677
摘要： In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.
摘要翻译：根据本文描述的一些实施例，提供了用于转移衬底的方法。该方法包括将一个或多个基底装载到一个或多个移动室的相应移动室中。移动室可在与两个或更多个处理模块相邻定位的第一轨上移动。每个移动室被构造成维持指定的气体状态。相应的移动室沿着第一轨道移动。相应的移动室被对接到两个或更多个处理模块的相应处理模块。一个或多个基板中的至少一个从相应的移动室传送到相应的处理模块。

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