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21. 发明专利

JP2003160883A METHOD AND DEVICE FOR ARRANGING FINE PARTICLES 审中-公开
公开(公告)号：JP2003160883A
公开(公告)日：2003-06-06
申请号：JP2001361306
申请日：2001-11-27
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： C23C26/00 , G11B5/855 , H01L31/04 , H01M14/00
摘要： PROBLEM TO BE SOLVED: To arrange fine particles on a substrate with high productivity. SOLUTION: This arranging method comprises forming high dielectric constant area and a low dielectric constant area on the substrate with the use of a thin-film patterning method. Then the charged particles are irradiated on the surface of the substrate to accumulate the charges selectively on the high dielectric constant area. The fine particles of which the surface is electrically charged onto the substrate are supplied. They are adhered and settled selectively on the high dielectric constant area in which the charges is accumulated. COPYRIGHT: (C)2003,JPO

22. 发明专利

JP2001015581A METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001015581A
公开(公告)日：2001-01-19
申请号：JP18670199
申请日：1999-06-30
申请人： TOSHIBA CORP
发明人： NARITA MASAKI , YOSHIDA YUKIMASA , AOKI KATSUAKI , FUJITA HIROSHI , YAMAZAKI OSAMU , OMINE TOSHIMITSU , MATSUI ISAO , OU ROHIN
IPC分类号： H01L21/302 , C23C16/44 , C23C16/50 , H01L21/205 , H01L21/3065 , H01L21/311 , H01L21/683 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To improve the manufacturing yield of a semiconductor device by eliminating the failure cased by particles by inducing the surface of a substrate to be treated to a negative charge by impressing a negative voltage upon an electrostatic chuck. SOLUTION: When the internal pressure of a reaction chamber 21 becomes a prescribed value after a process gas is introduced to the chamber 21 from a process gas supplying source 30 through a gas nozzle 30A, discharge plasma 32 is generated by supplying high-frequency power from a high-frequency power source 25 to a substrate holding base 22, and dry etching is performed on a substrate 24 to be treated. Then the surface of the substrate 24 is induced to a negative charge by stopping the supply of the positive DC voltage impressed upon an electrostatic chuck 23 and, at the same time, by impressing a negative DC voltage upon the chuck 23. Consequently, the manufacturing yield of a semiconductor device can be improved, because the failure caused by particles is eliminated.

23. 发明专利

JP2000283911A PARTICLE MEASURING DEVICE AND PARTICLE MEASURING METHOD 失效
公开(公告)号：JP2000283911A
公开(公告)日：2000-10-13
申请号：JP9288899
申请日：1999-03-31
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： G01N27/60 , G01N15/02
摘要： PROBLEM TO BE SOLVED: To provide a particle measuring device capable of measuring a particle size number distribution easily and highly precisely under a low pressure. SOLUTION: This particle measuring device 1 is equipped with a plasma generator 11, a charged-particle counter 12, a power source 13 for generating a positive high voltage, a filter 14, a pump 15, and a particle size number distribution operation part 16 for operating a particle size. The plasma generator 11 has a positive electrode 17 and a negative electrode 18, arranged oppositely, and the charged-particle counter 12 installed on the positive electrode 17. By paying attention the fact that a particle to be measured draws a flying locus corresponding to a voltage between the electrodes 17, 18 under plasma discharge, the charged-particle counter 12 is placed on a proper position, and the voltage applied between the electrodes 17, 18 is changed, and the particle to be measured having a specific particle size is collected by the charged-particle counter 12 in each voltage. By this, a particle size number distribution of the particles to be measured can be detected easily and precisely under a low pressure.

24. 发明专利

JPH07169758A METHOD FOR GENERATING EXCITED OXYGEN AND METHOD FOR SUPPLYING IT 失效
公开(公告)号：JPH07169758A
公开(公告)日：1995-07-04
申请号：JP22995194
申请日：1994-09-26
申请人： TOSHIBA CORP
发明人： UI AKIO , MATSUI ISAO , NAKAMURA YOSHIAKI
IPC分类号： C23C16/44 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To generate a large amount of excited oxygen in a plasma discharge area and to reduce the extinguished amount of the excited oxygen in a first reaction area so as to supply a large amount of excited oxygen to a second reaction area by supplying the excited oxygen to the first reaction area while the pressure in the first reaction area is maintained at a lower level than the plasma discharge area. CONSTITUTION:A plasma discharge section 10 and a first reaction chamber 12 are separated from each other by a nozzle 16 and the aperture of the nozzle 16 is appropriately set so that a pressure difference can be created between the section 10 and chamber 12. A large amount of excited oxygen generated in the higher-pressure section 10 is blown into the lower-pressure chamber 12 through the nozzle 16 and supplied to a second reaction chamber 13 with a less extinguished amount. Namely, a large amount of excited oxygen is generated in the higher-pressure section 1 and the extinguished amount of the excited oxygen in the lower-pressure chamber 12 is reduced. Therefore, the excited oxygen can be effectively supplied to the second reaction chamber 13.

25. 发明专利

JPH06140339A VAPOR GROWTH METHOD AND DEVICE, AND OXYGEN EXCITATION METHOD 失效
公开(公告)号：JPH06140339A
公开(公告)日：1994-05-20
申请号：JP28840792
申请日：1992-10-27
申请人： TOSHIBA CORP
发明人： MATSUI ISAO , UI AKIO
IPC分类号： H01L21/205 , C23C16/40 , C23C16/44 , C23C16/452 , H01L21/31
摘要： PURPOSE:To provide a vapor growth method which can form a film favorable in step coverage and excellent in insulation property at low temperature inside a groove at high aspect ratio. CONSTITUTION:A film is formed on the surface of a sample 4 while introducing gas containing silicon and ozone into the reactor 1 accommodating a sample 4 and introducing excited oxygen by exciting oxygen or gas containing oxygen. Moreover, a film is formed on the surface of a sample 4 while introducing the gas containing silicon into the reactor 1 accommodating the sample 4 and introducing ozone and excited oxygen each being produced by exciting oxygen and gas containing oxygen.

26. 发明专利

JPS6482520A VAPOR GROWTH DEVICE 失效
公开(公告)号：JPS6482520A
公开(公告)日：1989-03-28
申请号：JP23884287
申请日：1987-09-25
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： H01L21/205
摘要： PURPOSE:To inhibit the precipitation of a solid group V substance onto a reaction pipe wall while reducing the quantity of an unreacted group V raw gas by installing fillers to a flow section lower than a crystal substrate in the direction of flow of a reaction gas and uniformly heating the fillers. CONSTITUTION:A granular filler layer 5 is heated at the point of sublimation or more of a group V substance contained in a reaction gas by a filler heating unit 7, and the reaction gas is heated at the temperature of the granular filler layer 5 when it passes through the layer 5. An undecomposed group V raw gas in the reaction gas is decomposed to a group V element by a decomposition reaction. A group V substance under a solid state in the reaction gas generated at that time generates a sublimation reaction. Since the sublimation reaction is an equilibrium reaction, sublimation pressure is determined by a temperature. All of the reaction gas heated at the point of sublimation or more are brought to a gaseous state, and discharged outside a reaction pipe from a reaction-gas discharge port 3. Accordingly, the group V substance included in the reaction gas is not precipitated into the reaction pipe under the solid state, and no undecomposed group V raw gas is contained in discharged gas from the reaction pipe.

27. 发明专利

JPS63278222A VAPOR GROWTH EQUIPMENT 失效
公开(公告)号：JPS63278222A
公开(公告)日：1988-11-15
申请号：JP8407987
申请日：1987-04-06
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： H01L21/205
摘要： PURPOSE:To obtain a crystal with a uniform film thickness and a uniform film composition by a method wherein a reflecting means which reflects a thermol radiation emitted from the surface of a sample so as to apply the reflected radiation to the sample surface is provided in a vapor growth equipment. CONSTITUTION:Eddy currents are induced in a susceptor 2 by a radio frequency current applied to a radio frequency coil 3. The susceptor 2 is heated by the induced eddy current. Substrates 6 attached to the susceptor 2 are heated by heat conduction. Heat rays are emitted from the surfaces of the substrates 6. The thermol radiation are reflected by mirrors 5 attached to the coil 3 and partially returned to the substrates 6. The end parts of the substrates 6 which have lower temperatures than the center parts are heated again by the reflected thermol radiation and the temperature of the substrate 6 becomes uniform. Reactive gas supplied from a supply inlet 1 is decomposed and made to react to make crystal growth. As the temperature of the substrate 1 is uniform, the uniformity of the film thickness and composition of the crystal made to grow can be obtained.

28. 发明专利

JP2004256841A APPARATUS FOR FORMING PARTICLE-DEPOSITED LAYER 审中-公开
公开(公告)号：JP2004256841A
公开(公告)日：2004-09-16
申请号：JP2003046232
申请日：2003-02-24
申请人： TOSHIBA CORP
发明人： HIRAOKA TAKAFUMI , MATSUI ISAO , NAKAMURA YOSHIAKI
IPC分类号： H05H1/24 , B01J19/00 , B05B5/025 , B05D1/06 , C23C24/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for forming a particle-deposited layer, which can make particles absorbed to an electrically charged part on a substrate surface with high selectivity. SOLUTION: The apparatus for forming particle-deposited layer 1 comprises: a particle-forming unit 2 for forming particles; an electrification unit 4 which electrifies the particles formed in the particle-forming unit 2; a holder 8 for holding a substrate 10; a particle spouting pipe 6 that has an electrically insulative inner surface, has one opening to which the particles electrified by the electrification unit 4 are supplied together with a carrier gas, and has the other opening from which the particles are spouted to the substrate 10 with the carrier gas; an electroconductive member 7 installed along the perimeter of the edge part on the substrate side of the particle spouting pipe 6; and a control means 9 which controls the electropotential of the electroconductive member 7 constant. COPYRIGHT: (C)2004,JPO&NCIPI

29. 发明专利

JP2001261335A METHOD AND APPARATUS FOR PRODUCING PARTICLE 失效
公开(公告)号：JP2001261335A
公开(公告)日：2001-09-26
申请号：JP2000077210
申请日：2000-03-17
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： C01G9/08 , B22F1/02 , B22F9/28
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing particles for restraining the particles formed in a reaction vessel from getting larger due to aggregation proceeding simultaneously with their growth. SOLUTION: This apparatus for producing particles is constituted of a reaction vessel 1, a raw gas charging unit 2 for charging a raw gas into the reaction vessel 1, a surface-adhering matter charging unit 3 for charging surface-adhering matter into the reaction vessel 1, an inert gas charging unit 4 for charging a carrier gas into the reaction vessel 1, a heater 5 equipped on the reaction vessel 1, a discharge unit 6, a cooler 7 into which microparticles formed in the reaction vessel 1 and then discharged via the unit 6 from the reaction vessel 1 and an inert gas are to be charged, a storage unit 8 for storing the particles passed through the cooler 7, a heater 9 for removing liquid component and surface-adhering matter from a solvent containing the particles stored in the storage section 8, and a filter 10 for extracting only the particles each of a desired size from particles of varying sizes.

30. 发明专利

JP2000331994A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JP2000331994A
公开(公告)日：2000-11-30
申请号：JP13887999
申请日：1999-05-19
申请人： TOSHIBA CORP
发明人： AOKI KATSUAKI , FUJITA HIROSHI , YAMAZAKI OSAMU , NARITA MASAKI , YOSHIDA YUKIMASA , OU ROHIN , MATSUI ISAO , OMINE TOSHIMITSU
IPC分类号： H01L21/302 , C23F4/00 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device in which particles producing during plasma processing of semiconductor wafer are hard to remain on the upper surface of the semiconductor wafer. SOLUTION: This plasma processing device for processing a semiconductor wafer 13 by a reactive gas converted into plasma is provided with a processing chamber, an outer peripheral ring 15 provided around the periphery of the semiconductor wafer arranged within the processing chamber, and a conductive member 16 which is provided in the outer peripheral ring 15 so as to allow particles floating on the upper surface of the semiconductor wafer to flow out outwardly in the radial direction of the semiconductor wafer to be processed without being blocked with a sheath generated on the surface of the outer peripheral ring.

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