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21. 发明授权

US08365682B2 Methods and apparatus for supporting substrates 有权
标题翻译：用于支撑基材的方法和装置
公开(公告)号：US08365682B2
公开(公告)日：2013-02-05
申请号：US11140777
申请日：2005-05-31
申请人： Wendell T. Blonigan , Carl Sorensen , John M. White , Robin L. Tiner
发明人： Wendell T. Blonigan , Carl Sorensen , John M. White , Robin L. Tiner
IPC分类号： B65G49/07
CPC分类号： H01L21/67259 , H01L21/68742 , H01L21/68778
摘要： Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of the lift pins during substrate lifting. In some embodiments, a magnetic field and/or weighting may alternatively or additionally be used to control the vertical orientation of the lift pins, limit the angle of the lift pins, and/or prevent the lift pins from unintentionally binding in a susceptor as the susceptor is raised and prevent the resulting uneven support of the substrate.
摘要翻译：衬底支撑方法和装置包括垂直对齐的提升销，其具有接合摩擦板和/或磁场的承载表面，以在衬垫提升期间保持提升销的垂直取向。在一些实施例中，可以替代地或另外地使用磁场和/或加权来控制提升销的垂直定向，限制提升销的角度和/或防止提升销在基座中无意地结合，因为感受器被升高并且防止由此产生的基板不均匀的支撑。

22. 发明授权

US08281739B2 RF shutter 有权
标题翻译：射频快门
公开(公告)号：US08281739B2
公开(公告)日：2012-10-09
申请号：US12040298
申请日：2008-02-29
申请人： Robin L. Tiner , Gaku Furuta , Yukinobu Adachi
发明人： Robin L. Tiner , Gaku Furuta , Yukinobu Adachi
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32651 , H01J2237/0206
摘要： The present invention generally comprises an RF shutter assembly for use in a plasma processing apparatus. The RF shutter assembly may reduce the amount of plasma creep below the substrate and shadow frame during processing, thereby reducing the amount of deposition that occurs on undesired surfaces. By reducing the amount of deposition on undesired surfaces, particle flaking and thus, substrate contamination may be reduced.
摘要翻译：本发明通常包括用于等离子体处理装置的RF快门组件。 RF快门组件可以在处理期间减少基板和阴影框架下方的等离子体蠕变的量，从而减少在不期望的表面上发生的沉积量。通过减少不期望的表面上的沉积量，可能会降低颗粒剥落，从而可能降低底物污染。

23. 发明申请

US20120103989A1 METHOD AND APPARATUS FOR SEALING AN OPENING OF A PROCESSING CHAMBER 有权
标题翻译：用于密封加工室的开口的方法和装置
公开(公告)号：US20120103989A1
公开(公告)日：2012-05-03
申请号：US13349307
申请日：2012-01-12
申请人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
发明人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
IPC分类号： B65D43/26
CPC分类号： C23C16/54 , C23C16/45517
摘要： A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译：提供一种用于密封处理室的开口的方法和装置。在一个实施例中，本发明通常提供集成在处理室的壁内的封闭构件，用于密封腔室壁内的开口。在另一个实施例中，本发明提供了一种封闭构件，其构造成将处理室的壁中的开口与室的内部密封。

24. 外观设计

USD640715S1 Lift pin assembly 有权
标题翻译：提升销总成
公开(公告)号：USD640715S1
公开(公告)日：2011-06-28
申请号：US29328012
申请日：2008-11-17
申请人： Robin L. Tiner
设计人： Robin L. Tiner

25. 发明申请

US20090258162A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090258162A1
公开(公告)日：2009-10-15
申请号：US12422183
申请日：2009-04-10
申请人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
发明人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
IPC分类号： C23C16/44 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32357 , C23C16/4405 , C23C16/507 , H01J37/3244 , H01J2237/3321
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

26. 发明申请

US20090064934A1 SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US20090064934A1
公开(公告)日：2009-03-12
申请号：US12205363
申请日：2008-09-05
申请人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/513
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

27. 发明授权

US06517303B1 Substrate transfer shuttle 失效
公开(公告)号：US06517303B1
公开(公告)日：2003-02-11
申请号：US09082484
申请日：1998-05-20
申请人： John M. White , Norman L. Turner , Robin L. Tiner , Ernst Keller , Shinichi Kurita , Wendell T. Blonigan , David E. Berkstresser
发明人： John M. White , Norman L. Turner , Robin L. Tiner , Ernst Keller , Shinichi Kurita , Wendell T. Blonigan , David E. Berkstresser
IPC分类号： B65G133
CPC分类号： H01L21/67748 , C03B25/08 , C03B29/08 , C03B35/142 , C03B35/202 , C03B2225/02 , C03C17/002 , F27D3/00 , F27D5/00 , H01L21/67173 , H01L21/67236 , Y02P40/57 , Y10S414/135 , Y10S414/139
摘要： The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.

28. 发明授权

US08992723B2 RF bus and RF return bus for plasma chamber electrode 有权
标题翻译：用于等离子体室电极的RF总线和RF返回总线
公开(公告)号：US08992723B2
公开(公告)日：2015-03-31
申请号：US12705600
申请日：2010-02-13
申请人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
发明人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
IPC分类号： H01L21/3065 , C23C16/505 , H01J37/32
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

29. 发明授权

US08853098B2 Substrate support with gas introduction openings 有权
标题翻译：衬底支撑与气体导入孔
公开(公告)号：US08853098B2
公开(公告)日：2014-10-07
申请号：US13401755
申请日：2012-02-21
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/00 , H01L21/44 , H01L21/31 , H01L21/469 , H01L21/687 , H01L21/683
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

30. 发明授权

US08381677B2 Prevention of film deposition on PECVD process chamber wall 有权
标题翻译：防止在PECVD工艺室壁上沉积膜
公开(公告)号：US08381677B2
公开(公告)日：2013-02-26
申请号：US11955575
申请日：2007-12-13
申请人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
发明人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/32623 , H01J37/32697
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

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