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21. 发明授权

US06768755B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06768755B2
公开(公告)日：2004-07-27
申请号：US09746065
申请日：2000-12-26
申请人： Daijiro Inoue , Ryoji Hiroyama , Kunio Takeuchi , Yasuhiko Nomura , Masayuki Hata
发明人： Daijiro Inoue , Ryoji Hiroyama , Kunio Takeuchi , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S500
CPC分类号： H01S5/2231 , H01S5/06226 , H01S5/2206 , H01S5/2222 , H01S5/2226 , H01S5/2227
摘要： A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.
摘要翻译：在具有脊部的p型包覆层上依次形成具有在脊部上表面上的条纹开口的耗尽增强层，低载流子浓度层和n型电流阻挡层。低载流子浓度层的载流子浓度比n型电流阻挡层低。耗尽增强层的带隙被设定为p型覆层和低载流子浓度层的带隙之间的中间电平。或者，在n型耗尽增强层上形成具有低载流子浓度的第一电流阻挡层和相反导电型的第二电流阻挡层，并且在第二电流阻挡层上形成p型接触层相反的导电类型和另一个p型接触层。

22. 发明授权

US06649942B2 Nitride-based semiconductor light-emitting device 有权
公开(公告)号：US06649942B2
公开(公告)日：2003-11-18
申请号：US10150930
申请日：2002-05-21
申请人： Masayuki Hata , Yasuhiko Nomura , Kunio Takeuchi , Tsutomu Yamaguchi , Takashi Kano
发明人： Masayuki Hata , Yasuhiko Nomura , Kunio Takeuchi , Tsutomu Yamaguchi , Takashi Kano
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06 , H01L33/14 , H01L33/38
摘要： A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.

23. 发明授权

US08121163B2 Semiconductor laser diode apparatus and method of fabricating the same 失效
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US08121163B2
公开(公告)日：2012-02-21
申请号：US12047924
申请日：2008-03-13
申请人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
发明人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译：获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离，第一和第二个方向和基地之间大的扭曲。

24. 发明申请

US20110188532A1 Semiconductor Laser Apparatus 审中-公开
标题翻译：半导体激光设备
公开(公告)号：US20110188532A1
公开(公告)日：2011-08-04
申请号：US13020080
申请日：2011-02-03
申请人： Masayuki HATA , Yasuhiko NOMURA , Yasuyuki BESSHO
发明人： Masayuki HATA , Yasuhiko NOMURA , Yasuyuki BESSHO
IPC分类号： H01S5/40 , H01S5/323
CPC分类号： H01S5/323 , H01S5/40
摘要： This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface is bonded onto a first region of the support substrate, a first section of the first surface overlaps with at least part of the fourth surface, and a second section of the first surface is bonded to a second region of the support substrate.
摘要翻译：该半导体激光装置包括具有第一表面和第二表面的第一半导体激光器件，由第二半导体激光器件形成的集成激光器件和具有第三表面和第四表面的第三半导体激光器件以及支撑衬底。第三表面结合到支撑基板的第一区域上，第一表面的第一部分与第四表面的至少一部分重叠，第一表面的第二部分结合到支撑基板的第二区域。

25. 发明授权

US07978744B2 Nitride based semiconductor laser device with oxynitride protective films on facets 有权
标题翻译：氮化物基半导体激光器件，面上有氮氧化物保护膜
公开(公告)号：US07978744B2
公开(公告)日：2011-07-12
申请号：US12236616
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氮作为构成元素的第一保护膜。在另一方面形成包括氧作为构成元素的第二保护膜。

26. 发明授权

US07924898B2 Nitride based semiconductor laser device with oxynitride protective coatings on facets 失效
标题翻译：基于氮化物的半导体激光器件，具有氧氮化物保护涂层
公开(公告)号：US07924898B2
公开(公告)日：2011-04-12
申请号：US12236627
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氧作为构成元素的第一保护膜。在另一方面形成包括氮作为构成元素的第二保护膜。

27. 发明授权

US07869480B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07869480B2
公开(公告)日：2011-01-11
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

28. 发明申请

US20100284433A1 SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
标题翻译：半导体激光器件和显示器
公开(公告)号：US20100284433A1
公开(公告)日：2010-11-11
申请号：US12812715
申请日：2009-09-17
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
IPC分类号： H01S5/40 , H01S5/34 , H01S5/343 , H01S5/026
CPC分类号： H04N9/3161 , B82Y20/00 , H01L2224/48091 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02476 , H01S5/0425 , H01S5/22 , H01S5/24 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4093 , H04N9/3105 , H04N9/3111 , H01L2924/00014
摘要： A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the green semiconductor laser element, the blue semiconductor laser element and the red semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element whose total output power is relatively small is larger than the number of the laser beam emitting portions of the semiconductor laser element, having a plurality of laser beam emitting portions, whose total output power is relatively large, or the number of the semiconductor laser element, having one laser beam emitting portion, whose output power is relatively large.
摘要翻译：获得能够容易地获得期望色调的半导体激光器件。该半导体激光装置（100）包括具有一个或多个激光束发射部的绿色半导体激光元件（30），具有一个或多个激光束发射部的蓝色半导体激光元件（50）和红色半导体具有一个或多个激光束发射部分的激光元件（10）。绿色半导体激光元件，蓝色半导体激光元件和红色半导体激光元件中的至少两个半导体激光元件具有这样的关系：总输出功率相对较小的半导体激光元件的激光束发射部分的数量是大于具有多个总输出功率相对较大的激光束发射部分的半导体激光元件的激光束发射部分的数量或具有一个激光束发射部分的半导体激光元件的数量，其中，输出功率比较大。

29. 发明申请

US20100025701A1 Method Of Fabricating Nitride-Based Semiconductor Light-Emitting Device And Nitride-Based Semiconductor Light-Emitting Device 有权
标题翻译：制造基于氮化物的半导体发光器件和氮化物半导体发光器件的方法
公开(公告)号：US20100025701A1
公开(公告)日：2010-02-04
申请号：US12576813
申请日：2009-10-09
申请人： Takashi KANO , Masayuki HATA , Yasuhiko NOMURA
发明人： Takashi KANO , Masayuki HATA , Yasuhiko NOMURA
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/0202 , H01S5/0207 , H01S5/0425 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.
摘要翻译：描述了能够抑制特性降低和产量的氮化物半导体发光器件及其制造方法。制造方法包括以下步骤：通过选择性地除去与氮化物基半导体衬底的发光部分相对应的第一区域以外的氮化物系半导体衬底的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部氮化物基半导体层直到规定的深度，并且在氮化物基半导体衬底的第一区域和沟槽部分上形成具有与氮化物基半导体衬底不同的组成的氮化物基半导体层。

30. 发明授权

US07567605B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07567605B2
公开(公告)日：2009-07-28
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

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