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21. 发明授权

US06744064B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US06744064B2
公开(公告)日：2004-06-01
申请号：US09776846
申请日：2001-02-06
申请人： Sung-nam Lee , Yong-jo Park , Ok-hyun Nam , In-hwan Lee , Won-seok Lee , Shi-yun Cho , Cheol-soo Sone
发明人： Sung-nam Lee , Yong-jo Park , Ok-hyun Nam , In-hwan Lee , Won-seok Lee , Shi-yun Cho , Cheol-soo Sone
IPC分类号： H01L2906
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/2009 , H01S5/2013 , H01S5/3403 , H01S5/34333
摘要： A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.
摘要翻译：提供一种半导体发光器件，其包括用于通过使用GaN在半导体发光器件中注入多个载流子而减少应变和载流子溢出的装置。半导体发光器件包括通过将AlGaN / GaN双层沉积预定次数形成的多量子势垒，或通过在有源层的上侧或下侧形成的应变补偿多量子势垒，通过沉积AlGaN / InGaN双层预定次数，不需要p型覆层。

22. 发明授权

US06719808B1 Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard mask 失效
标题翻译：使用多晶硅硬掩模制造半导体器件的方法和装置
公开(公告)号：US06719808B1
公开(公告)日：2004-04-13
申请号：US09695068
申请日：2000-10-25
申请人： Ji-soo Kim , Tae-hyuk Ahn , Won-seok Lee , Wan-jae Park
发明人： Ji-soo Kim , Tae-hyuk Ahn , Won-seok Lee , Wan-jae Park
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , H01L21/31144
摘要： A method and apparatus for use in manufacturing a semiconductor device strips a polysilicon hard mask without damaging the layer left exposed by openings formed by using the polysilicon hard mask as an etching mask. The method includes forming a polysilicon hard mask in a pattern on a first layer to expose a portion of the first layer, dry etching the exposed portion of the first layer using the polysilicon hard mask as an etching mask to form an opening in the first layer, and thereafter removing the polysilicon hard mask by supplying an etching gas onto the polysilicon hard mask in a direction parallel to the major surface of the semiconductor substrate. The processing apparatus includes a reaction chamber including a spin chuck which supports the semiconductor substrate for rotation, a gas supply unit for supplying a process gas to the reaction chamber, a gas injection unit for injecting the process gas supplied by the gas supply unit into the reaction chamber in a direction parallel to the major surface of the semiconductor substrate, and an exhaust unit for exhausting gases from the reaction chamber.
摘要翻译：用于制造半导体器件的方法和装置剥离多晶硅硬掩模，而不会损坏通过使用多晶硅硬掩模形成的开口暴露的层作为蚀刻掩模。该方法包括在第一层上形成图案中的多晶硅硬掩模以暴露第一层的一部分，使用多晶硅硬掩模作为蚀刻掩模干蚀刻第一层的暴露部分，以在第一层中形成开口然后通过在多晶硅硬掩模上沿着与半导体基板的主表面平行的方向提供蚀刻气体来除去多晶硅硬掩模。处理装置包括：反应室，包括支撑旋转用半导体基板的旋转卡盘，向反应室供给处理气体的气体供给单元，将由气体供给单元供给的处理气体注入到反应室在与半导体基板的主表面平行的方向上，以及用于从反应室排出气体的排气单元。

23. 发明授权

US06643201B2 Memory device having read charge control, write charge control and floating or precharge circuits 失效
标题翻译：具有读取充电控制，写入充电控制和浮置或预充电电路的存储器件
公开(公告)号：US06643201B2
公开(公告)日：2003-11-04
申请号：US10205838
申请日：2002-07-26
申请人： Won-Seok Lee , Chang-Yong Lee , Jung-Bae Lee , Won-Chang Jung
发明人： Won-Seok Lee , Chang-Yong Lee , Jung-Bae Lee , Won-Chang Jung
IPC分类号： G11C700
CPC分类号： G11C7/1069 , G11C7/065 , G11C7/1048 , G11C7/1051 , G11C7/1078 , G11C7/1096 , G11C7/12
摘要： A memory charging circuit includes a read charge control circuit controlled according to a read control signal and an address value. A write charge control circuit is controlled according to a write control signal and the same or a different address value. Charging to and charging from the same data IO lines is controlled using the read charge amplifier circuit and the write charge amplifier circuit. A column select line circuit can be configured into a first arrangement where a first output is activated according to a read control signal and an address and a second output is activated according to a write control signal and the same or a different address. In a second arrangement, the first output is activated according to an address and either the read control signal or the write control signal.
摘要翻译：存储器充电电路包括根据读取控制信号和地址值控制的读取充电控制电路。写入充电控制电路根据写入控制信号和相同或不同的地址值进行控制。使用读取的电荷放大器电路和写入电荷放大器电路来控制对相同数据IO线的充电和充电。列选择线路电路可以被配置成根据读控制信号和地址激活第一输出的第一布置，并且根据写控制信号和相同或不同的地址来激活第二输出。在第二布置中，根据地址和读控制信号或写控制信号来激活第一输出。

24. 发明授权

US06500747B1 Method of manufacturing GaN semiconductor substrate 失效
标题翻译：制造GaN半导体衬底的方法
公开(公告)号：US06500747B1
公开(公告)日：2002-12-31
申请号：US09682746
申请日：2001-10-12
申请人： Won-seok Lee , Ok-hyun Nam , Cheol-soo Sone
发明人： Won-seok Lee , Ok-hyun Nam , Cheol-soo Sone
IPC分类号： H01L2128
CPC分类号： H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , Y10S438/974
摘要： A method of manufacturing a semiconductor substrate is provided. The method includes a first step of forming a rugged portion in a GaN substrate, and a second step of forming a GaN thin film on the GaN substrate at a lateral growth rate fast enough to cover the GaN thin film vertically grown with the GaN thin film laterally grown, so that the rugged portion is covered with the GaN thin film.
摘要翻译：提供一种制造半导体衬底的方法。该方法包括在GaN衬底中形成粗糙部分的第一步骤，以及在GaN衬底上以足以覆盖与GaN薄膜垂直生长的GaN薄膜的横向生长速率形成GaN薄膜的第二步骤横向生长，使得粗糙部分被GaN薄膜覆盖。

25. 发明授权

US06348375B1 Method of fabricating a bit line structure for a semiconductor device 失效
标题翻译：制造半导体器件的位线结构的方法
公开(公告)号：US06348375B1
公开(公告)日：2002-02-19
申请号：US09282006
申请日：1999-03-29
申请人： Won-seok Lee , Kyoung-sub Shin , Sang-sup Jeong
发明人： Won-seok Lee , Kyoung-sub Shin , Sang-sup Jeong
IPC分类号： H01L218242
CPC分类号： H01L27/10888 , H01L27/10855 , H01L27/10885
摘要： A bit line structure for semiconductor devices, and a fabrication method thereof are provided. In this method, a first conductive film pattern, which fills a first contact hole and is used as a bit line, is formed on a first dielectric film pattern having the first contact hole formed on a semiconductor substrate. A lower part protecting layer pattern, comprised of an anti-reflectance coating (ARC) layer used in a process for patterning the first dielectric layer pattern, is formed on the interface between the first conductive layer pattern and the first dielectric layer pattern. A spacer for covering the sidewall of the first conductive film pattern is formed. An upper part protecting layer pattern comprised of an upper ARC layer is formed to cover the upper part of the first conductive layer pattern. A second dielectric layer pattern having a second contact hole is formed to cover the first conductive layer pattern. A second conductive layer pattern filling the second contact hole is formed and used as a storage node of a capacitor.
摘要翻译：提供半导体器件的位线结构及其制造方法。在该方法中，在形成有半导体衬底的第一接触孔的第一电介质膜图案上形成填充第一接触孔并用作位线的第一导电膜图案。在第一导电层图案和第一介电层图案之间的界面上形成由用于图案化第一介电层图案的工艺中使用的抗反射涂层（ARC）层构成的下部保护层图案。形成用于覆盖第一导电膜图案的侧壁的间隔物。形成由上部ARC层构成的上部保护层图案，以覆盖第一导电层图案的上部。形成具有第二接触孔的第二电介质层图案以覆盖第一导电层图案。形成填充第二接触孔的第二导电层图案并用作电容器的存储节点。

26. 发明申请

US20220335463A1 EVENT SERVICE PROVIDING SYSTEM USING DIGITAL TWIN OF REAL SPACE AND VIRTUAL SPACE 有权
公开(公告)号：US20220335463A1
公开(公告)日：2022-10-20
申请号：US17723226
申请日：2022-04-18
申请人： Ju Hyoung KIM , Won Seok LEE
发明人： Ju Hyoung KIM , Won Seok LEE
IPC分类号： G06Q30/02
摘要： Disclosed is an event service providing system using a digital twin of a real space and a virtual space, and more particularly, an event service providing system using a digital twin of a real space and a virtual space capable of securing evenness and fairness between participants competing in the offline and online stores by adjusting the difficulty according to the progress of the event held at each offline store and online store as well as securing the reliability and integrity of the determination of winners winning a prize in a process of conducting the same fusion lottery event between offline and online stores after generating an online store which is a virtual space equal to a real space using a digital twin with respect to an offline store which is a real space.

27. 发明申请

US20130305805A1 DEVICE, SYSTEM AND METHOD FOR CALIBRATION OF CAMERA AND LASER SENSOR 有权
标题翻译：用于校准摄像机和激光传感器的装置，系统和方法
公开(公告)号：US20130305805A1
公开(公告)日：2013-11-21
申请号：US13949622
申请日：2013-07-24
申请人： Seong Yong AHN , Tok Son CHOE , Yong Woon PARK , Won Seok LEE
发明人： Seong Yong AHN , Tok Son CHOE , Yong Woon PARK , Won Seok LEE
IPC分类号： G01C23/00
CPC分类号： G01C23/00 , G01S7/497 , G01S17/08 , G01S17/87
摘要： Disclosed are a calibration device, a calibration system and a calibration method. The calibration device includes a camera configured to capture image information, a laser sensor configured to capture image information, a laser sensor configured to detect distance information, and a calibration module configured to perform a calibration of the camera and the laser sensor by obtaining a relation between the image information and the distance information, wherein the calibration module includes a plane member disposed to intersect a scanning surface of the laser sensor such that an intersection line is generated, and disposed within a capturing range by the camera so as to be captured by the camera, and a controller configured to perform coordinate conversions with respect to the image information and the distance information based on a ratio between one side of the plane member and the intersection line, and based on a plane member image included in the image information. Under these configurations, a calibration is performed through direct coordinate conversions with respect to image information and distance information.
摘要翻译：公开了一种校准装置，校准系统和校准方法。该校准装置包括被配置为捕获图像信息的相机，被配置为捕获图像信息的激光传感器，被配置为检测距离信息的激光传感器，以及被配置为通过获得关系来执行相机和激光传感器的校准的校准模块在所述图像信息和所述距离信息之间，其中所述校准模块包括布置成与所述激光传感器的扫描表面相交的平面构件，使得生成交叉线，并且通过所述相机设置在捕获范围内，以被所述摄像机捕获相机和配置为基于平面构件的一侧与交叉线之间的比率，并且基于包括在图像信息中的平面构件图像来执行关于图像信息和距离信息的坐标转换的控制器。在这些配置下，通过对图像信息和距离信息的直接坐标转换执行校准。

28. 发明申请

US20110228581A1 STACKED MEMORY DEVICE AND METHOD OF REPAIRING SAME 失效
标题翻译：堆叠式存储器件及其修复方法
公开(公告)号：US20110228581A1
公开(公告)日：2011-09-22
申请号：US13015847
申请日：2011-01-28
申请人： Chul-Woo PARK , Hong-Sun HWANG , Sang-Beom KANG , Won-Seok LEE
发明人： Chul-Woo PARK , Hong-Sun HWANG , Sang-Beom KANG , Won-Seok LEE
IPC分类号： G11C5/02 , G11C29/04
CPC分类号： G11C5/025 , G11C29/80
摘要： A stacked semiconductor memory device comprises memory cell array layers that are stacked in an inverted wedge shape and have different redundancy sizes from each other. The stacked semiconductor memory device has space for vertical connection between layers, a relatively small size, and a relatively high yield.
摘要翻译：层叠的半导体存储器件包括以倒置的楔形堆叠并且具有彼此不同的冗余尺寸的存储单元阵列层。层叠的半导体存储器件具有用于层之间的垂直连接的空间，相对较小的尺寸和相对高的产量。

29. 发明申请

US20090017837A1 System and method for determining position of mobile communication device 审中-公开
标题翻译：用于确定移动通信设备位置的系统和方法
公开(公告)号：US20090017837A1
公开(公告)日：2009-01-15
申请号：US10576817
申请日：2005-09-09
申请人： Tae Kim, II , Sung Kang, II , Tae Kyoung Kwon , Sung Hee Kim , Won Seok Lee
发明人： Tae Kim, II , Sung Kang, II , Tae Kyoung Kwon , Sung Hee Kim , Won Seok Lee
IPC分类号： H04Q7/20
CPC分类号： H04W64/00 , G01S5/10
摘要： Provided is a method and system for determining a position of a mobile communication device in a mobile communication network, the method including the steps of: receiving a plurality of pieces of base station signal information, the base station signal information including base station identification information, the base stations transmitting the base station signal information to the mobile communication device; determining a base station corresponding to each of the plurality of pieces of base station signal information based on the base station identification information; generating vector information associated with the plurality of the base stations based on geographic information corresponding to the determined base station; and generating location information of the device according to the generated vector information, wherein the step of generating the vector information comprises the steps of: determining a predetermined vector proceeding order associated with the plurality of the base stations according to the base station signal information; and sequentially determining a vector with respect to the plurality of the base stations according to the determined vector proceeding order, with the base station in which the device is currently communicating with as a starting point.
摘要翻译：提供一种用于确定移动通信网络中的移动通信设备的位置的方法和系统，该方法包括以下步骤：接收多条基站信号信息，所述基站信号信息包括基站识别信息，所述基站向所述移动通信装置发送所述基站信号信息; 基于所述基站识别信息确定与所述多个基站信号信息中的每一个对应的基站; 基于与所确定的基站对应的地理信息，生成与所述多个基站相关联的矢量信息; 以及根据所生成的矢量信息生成设备的位置信息，其中产生矢量信息的步骤包括以下步骤：根据所述基站信号信息确定与所述多个基站相关联的预定向量处理顺序; 并且根据所确定的向量进行顺序，与设备当前正在通信的基站作为起点，顺序地确定关于多个基站的向量。

30. 发明申请

US20070133267A1 Phase change memory device and method of programming the same 有权
标题翻译：相变存储器件及其编程方法
公开(公告)号：US20070133267A1
公开(公告)日：2007-06-14
申请号：US11319284
申请日：2005-12-29
申请人： Beak-Hyung Cho , Jong-Soo Seo , Won-Seok Lee
发明人： Beak-Hyung Cho , Jong-Soo Seo , Won-Seok Lee
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2013/0078 , G11C2013/0092 , G11C2213/72 , G11C2213/79
摘要： A phase change memory device includes a memory cell having a phase change material, a write driver which supplies a step-down set current to the memory cell, where the step-down set current includes a plurality of successive steps of decreasing current magnitude, and a set program control circuit which controls a duration of the step-down set current supplied by the write driver.
摘要翻译：相变存储器件包括具有相变材料的存储单元，向该存储单元提供降压设定电流的写入驱动器，其中降压设定电流包括减小电流幅度的多个连续步骤，以及控制由写入驱动器提供的降压设定电流的持续时间的设定程序控制电路。

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