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21. 发明申请

WO2009015213A1 MULTI-JUNCTION SOLAR CELLS AND METHODS AND APPARATUSES FOR FORMING THE SAME 审中-公开
标题翻译：多功能太阳能电池及其形成方法及装置
公开(公告)号：WO2009015213A1
公开(公告)日：2009-01-29
申请号：PCT/US2008/070900
申请日：2008-07-23
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , CHAE, Yong Kee , CHOI, Soo Young , WON, Tae Kyung , LI, Liwei
发明人： SHENG, Shuran , CHAE, Yong Kee , CHOI, Soo Young , WON, Tae Kyung , LI, Liwei
IPC分类号： H01L31/00
CPC分类号： H01L31/03921 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.
摘要翻译：本发明的实施例一般涉及太阳能电池及其形成方法和装置。更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

22. 发明申请

WO2008124507A1 METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE 审中-公开
标题翻译：用于形成具有低接触电阻的光伏器件的方法
公开(公告)号：WO2008124507A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059274
申请日：2008-04-03
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , CHAE, Yong Kee , WON, Tae Kyung , LI, Liwei , CHOI, Soo Young , LI, Yanping , CRUZ, Joe Griffith
发明人： SHENG, Shuran , CHAE, Yong Kee , WON, Tae Kyung , LI, Liwei , CHOI, Soo Young , LI, Yanping , CRUZ, Joe Griffith
IPC分类号： H01M10/44
CPC分类号： H01L31/022425 , H01L31/0745 , H01L31/076 , H01L31/077 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.
摘要翻译：提供了一种改进的PV太阳能电池结构及其制造方法。在一个实施例中，光伏器件包括第一光电转换单元，第一透明导电氧化物层和布置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。在另一实施例中，形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底，在透明导电氧化物层上沉积第一微晶硅层，以及在微晶硅上形成第一光电转换单元层。

23. 发明申请

WO2011087514A1 ETCH STOP MICROCRYSTALLINE THIN FILM TRANSISTOR 审中-公开
标题翻译： ETCH停止微晶薄膜晶体管
公开(公告)号：WO2011087514A1
公开(公告)日：2011-07-21
申请号：PCT/US2010/021323
申请日：2010-01-18
申请人： APPLIED MATERIALS, INC. , NOMINANDA, Helinda , WON, Tae, Kyung , CHOI, Soo, Young
发明人： NOMINANDA, Helinda , WON, Tae, Kyung , CHOI, Soo, Young
IPC分类号： H01L29/786
CPC分类号： H01L29/78678 , H01L29/66765 , H01L29/78669
摘要： The present invention generally relates to a thin film transistor (TFT) and methods for its fabrication. Some TFTs have an etch stop structure formed thereon in the active channel. The etch stop structure is formed by etching a layer of etch stop material. The etching may damage the underlying microcrystalline silicon material. By depositing an amorphous silicon layer over the microcrystalline silicon, the microcrystalline silicon may be protected from damage from the etching. Additionally, the doped amorphous silicon that is used as the ohmic contact may be tailored so that the resistivity is less than 1 ohm-cm. A hydrogen or nitrogen plasma treatment of the amorphous silicon layer may also be used to improve numerous characteristics of the TFT.
摘要翻译：本发明一般涉及薄膜晶体管（TFT）及其制造方法。一些TFT在有源沟道中形成有蚀刻停止结构。通过蚀刻蚀刻停止材料层形成蚀刻停止结构。蚀刻可能损坏下面的微晶硅材料。通过在微晶硅上沉积非晶硅层，可以保护微晶硅免受蚀刻损伤。另外，可以调整用作欧姆接触的掺杂非晶硅，使电阻率小于1欧姆 - 厘米。也可以使用非晶硅层的氢或氮等离子体处理来改善TFT的许多特性。

24. 发明申请

WO2009102520A9 MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR 审中-公开
标题翻译：微晶硅薄膜晶体管
公开(公告)号：WO2009102520A9
公开(公告)日：2010-09-30
申请号：PCT/US2009030865
申请日：2009-01-13
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , CHOI SOO YOUNG , PARK BEOM SOO , YIM DONG-KIL , CHEN JRIYAN JERRY
发明人： WON TAE KYUNG , CHOI SOO YOUNG , PARK BEOM SOO , YIM DONG-KIL , CHEN JRIYAN JERRY
IPC分类号： H01L21/205 , H01L29/78
CPC分类号： H01L29/04 , C23C16/26 , H01J37/32009 , H01J37/32357 , H01J37/32862 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/66742 , H01L29/7866
摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.
摘要翻译：提供了在薄膜晶体管结构中形成微晶硅层的方法。在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

25. 发明申请

WO2009129391A3 LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT 审中-公开
标题翻译：低温薄膜晶体管工艺，器件性能和器件稳定性改进
公开(公告)号：WO2009129391A3
公开(公告)日：2010-02-18
申请号：PCT/US2009040811
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , YANG YA-TANG , PARK BEOM SOO , WON TAE KYUNG , CHOI SOO YOUNG , WHITE JOHN M
发明人： YANG YA-TANG , PARK BEOM SOO , WON TAE KYUNG , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
摘要翻译：提供一种用于形成薄膜晶体管的方法和装置。形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。在一些实施例中，第一介电层是富硅的氮化硅层。形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

26. 发明申请

WO2009129391A2 LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT 审中-公开
标题翻译：低温薄膜晶体管工艺，器件性能和器件稳定性改进
公开(公告)号：WO2009129391A2
公开(公告)日：2009-10-22
申请号：PCT/US2009/040811
申请日：2009-04-16
申请人： APPLIED MATERIALS, INC. , YANG, Ya-Tang , PARK, Beom Soo , WON, Tae Kyung , CHOI, Soo Young , WHITE, John, M.
发明人： YANG, Ya-Tang , PARK, Beom Soo , WON, Tae Kyung , CHOI, Soo Young , WHITE, John, M.
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
摘要翻译：提供一种用于形成薄膜晶体管的方法和装置。形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。在一些实施例中，第一介电层是富硅的氮化硅层。形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

27. 发明申请

WO2006007313A2 IMPROVING WATER-BARRIER PERFORMANCE OF AN ENCAPSULATING FILM 审中-公开
标题翻译：改善封隔膜的水障碍性能
公开(公告)号：WO2006007313A2
公开(公告)日：2006-01-19
申请号：PCT/US2005020079
申请日：2005-06-06
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , YADAV SANJAY
发明人： WON TAE KYUNG , YADAV SANJAY
IPC分类号： C23C16/00
CPC分类号： C23C16/345 , C23C8/36 , C23C28/00 , C23C28/04 , C23C28/42 , H01L51/5256
摘要： A method and apparatus for depositing a material layer onto a substrate at low temperature is described. The material layer can be used as an encapsulating layer for low temperature processes required in various display applications due to thermal instability of underlying materials. The encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials to reduce surface roughness, improve water-barrier performance, reduce thermal stress, and provide good step coverage for many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In addition, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.
摘要翻译：描述了一种用于在低温下将材料层沉积到衬底上的方法和装置。由于下层材料的热不稳定性，材料层可用作各种显示应用中所需的低温工艺的封装层。封装层包括具有一个或多个阻挡层材料和一种或多种低介电常数材料的一种或多种材料层（多层），以降低表面粗糙度，改善防水性能，降低热应力，并为许多材料提供良好的阶梯覆盖衬底类型和许多衬底尺寸。因此，如此沉积的封装层为诸如OLED器件的各种显示器件提供了良好的器件寿命。此外，提供了一种在低温下在基板上沉积无定形碳材料的方法。无定形碳材料可用于降低热应力并防止沉积的薄膜从基底上剥离。

28. 发明申请

WO2005108642A1 METHOD AND APPARATUS OF DEPOSITING LOW TEMPERATURE INORGANIC FILMS ON PLASTIC SUBSTRATES 审中-公开
标题翻译：沉积低温无机膜在塑料基材上的方法与装置
公开(公告)号：WO2005108642A1
公开(公告)日：2005-11-17
申请号：PCT/US2005/012810
申请日：2005-04-14
申请人： APPLIED MATERIALS, INC. , HOU, Li , WON, Tae Kyung
发明人： HOU, Li , WON, Tae Kyung
IPC分类号： C23C16/02
CPC分类号： C23C16/0245 , C23C16/02 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/505 , H01L51/5253
摘要： A method and apparatus for depositing a low temperature inorganic film onto large area plastic substrates are described in this invention. Low temperature (
摘要翻译：本发明描述了一种将低温无机膜沉积到大面积塑料基底上的方法和装置。低温（<80°C）无机膜不能很好地粘附到塑料基材上。因此，加入低温（<80℃）等离子体预处理以提高粘附性。具有等离子体预处理的无机膜显示出良好的附着力和密封性。

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