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21. 发明申请

US20100164070A1 Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device 审中-公开
标题翻译： III族氮化物半导体晶体基板和半导体器件
公开(公告)号：US20100164070A1
公开(公告)日：2010-07-01
申请号：US12719719
申请日：2010-03-08
申请人： Takuji OKAHISA , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
发明人： Takuji OKAHISA , Tomohiro Kawase , Tomoki Uemura , Muneyuki Nishioka , Satoshi Arakawa
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403
摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。

22. 发明申请

US20090315150A1 III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Substrate, and III-Nitride Semiconductor Device 有权
标题翻译： III型氮化物晶体制造方法，III型氮化物晶体基板和III型氮化物半导体装置
公开(公告)号：US20090315150A1
公开(公告)日：2009-12-24
申请号：US12297311
申请日：2007-11-15
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L29/20 , C30B19/00
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在s）; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（1t）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

23. 发明授权

US07442355B2 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof 有权
标题翻译：磷化铟基片和磷化铟单晶及其制造方法
公开(公告)号：US07442355B2
公开(公告)日：2008-10-28
申请号：US10551923
申请日：2004-05-06
申请人： Tomohiro Kawase
发明人： Tomohiro Kawase
IPC分类号： C01B33/26 , C30B11/04 , C30B28/14
CPC分类号： C30B11/00 , C30B29/40
摘要： An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lower end of a growth container. The growth container housing the seed crystal, indium phosphide raw material, dopant, and boron oxide is placed in a crystal growth chamber. The temperature is raised to at or above the melting point of indium phosphide. After melting the boron oxide, indium phosphide raw material, and dopant, the temperature of the growth container is lowered in order to obtain an indium phosphide monocrystal having a low dislocation density and a uniform dopant concentration on the wafer as well as in the depth direction.
摘要翻译：如下获得半导体器件用磷化铟基板。为了具有<100>方向的晶体的生长方向，将具有与晶体的规定截面积比的晶种放置在生长容器的下端。容纳晶种，磷化铟原料，掺杂剂和氧化硼的生长容器放置在晶体生长室中。将温度升高至等于或高于磷化铟的熔点。在熔化氧化硼，磷化铟原料和掺杂剂之后，降低生长容器的温度，以便获得在晶片上以及在深度方向上具有低位错密度和均匀掺杂剂浓度的磷化铟单晶。

24. 发明授权

US6007622A Method of preparing group III-V compound semiconductor crystal 失效
标题翻译： III-V族化合物半导体晶体的制备方法
公开(公告)号：US6007622A
公开(公告)日：1999-12-28
申请号：US843124
申请日：1997-04-25
申请人： Tomohiro Kawase , Masami Tatsumi
发明人： Tomohiro Kawase , Masami Tatsumi
IPC分类号： C30B11/00 , C30B29/40 , C30B29/42 , C30B11/04
CPC分类号： C30B11/10 , C30B27/00 , C30B29/40 , C30B29/42
摘要： A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.
摘要翻译：提供了一种以高再现性制备具有良好电特性并从其中除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 密封填充坩埚气体不渗透材料; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。

25. 发明授权

US5656077A Crucible for preparing compound semiconductor crystal 失效
标题翻译：用于制备化合物半导体晶体的坩埚
公开(公告)号：US5656077A
公开(公告)日：1997-08-12
申请号：US503702
申请日：1995-07-18
申请人： Tomohiro Kawase
发明人： Tomohiro Kawase
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B29/42 , C30B11/00 , C30B11/002 , Y10S117/90 , Y10T117/10
摘要： A method of preparing a compound semiconductor crystal in a crucible involves first forming a boron or boron compound containing layer on an inner surface of the crucible and heat treating the same to form a B.sub.2 O.sub.3 containing layer. The resulting preheated crucible is then employed for preparing the compound semiconductor crystal. By pretreating the crucible in this manner, it is possible to previously form a homogenous B.sub.2 O.sub.3 film on the crucible interior surface while preventing incomplete and heterogeneous coating of the B.sub.2 O.sub.3 film. Consequently, it is possible to prevent a raw material melt from wetting the crucible interior surface and thus to suppress polycrystallization, thereby preparing a compound semiconductor single crystal with an excellent yield.
摘要翻译：在坩埚中制备化合物半导体晶体的方法包括首先在坩埚的内表面上形成含硼化合物或含硼化合物层并对其进行热处理以形成含B2O3的层。然后将所得的预热坩埚用于制备化合物半导体晶体。通过以这种方式预处理坩埚，可以预先在坩埚内表面上形成均匀的B2O3膜，同时防止B2O3膜的不均匀涂层。因此，可以防止原料熔体润湿坩埚内表面，从而抑制多晶化，从而以优异的成品率制备化合物半导体单晶。

26. 发明授权

US09797068B2 Method of producing semiconductor single crystal 有权
公开(公告)号：US09797068B2
公开(公告)日：2017-10-24
申请号：US13636477
申请日：2011-03-28
申请人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
发明人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
IPC分类号： C30B27/00 , C30B11/00 , C30B29/40
CPC分类号： C30B27/00 , C30B11/00 , C30B29/40
摘要： Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

27. 发明授权

US08848100B2 Information processing device, information processing system, and launch program and storage medium storing the same providing photographing functionality 有权
标题翻译：信息处理装置，信息处理系统以及存储相同提供拍摄功能的发射程序和存储介质
公开(公告)号：US08848100B2
公开(公告)日：2014-09-30
申请号：US12531586
申请日：2008-10-01
申请人： Masato Kuwahara , Kazunori Koshiishi , Yui Ehara , Ryo Fukasawa , Masahiro Imaizumi , Yoshihiro Matsushima , Yuki Onozawa , Hiroyuki Kono , Yoshihiro Iwasa , Tomohiro Kawase , Yusuke Akifusa , Tomohisa Saito
发明人： Masato Kuwahara , Kazunori Koshiishi , Yui Ehara , Ryo Fukasawa , Masahiro Imaizumi , Yoshihiro Matsushima , Yuki Onozawa , Hiroyuki Kono , Yoshihiro Iwasa , Tomohiro Kawase , Yusuke Akifusa , Tomohisa Saito
IPC分类号： H04N5/225
CPC分类号： A63F13/213 , A63F13/10 , A63F13/2145 , A63F13/215 , A63F13/26 , A63F13/95 , A63F2300/1081 , A63F2300/1087 , A63F2300/204 , A63F2300/301 , G06F1/1616 , G06F1/1643 , G06F1/1647 , G06F1/1656 , G06F1/1677 , G06F1/1686 , G06F1/1692 , G06F3/03545 , G06F3/0488 , G06F3/167 , G06F2200/1632 , H04B5/0031 , H04N1/00204 , H04N1/00965 , H04N1/2112 , H04N1/2129 , H04N1/2158 , H04N5/225 , H04N5/2252 , H04N5/23216 , H04N5/23293 , H04N2101/00 , H04N2201/0084 , H04N2201/216 , H04N2201/3264
摘要： A game device according to the present embodiment includes a camera as image pick-up means. An inner camera is accommodated in an upper housing. In addition, a microphone hole is provided in an inner surface of the upper housing so as to sense external sound through a microphone.
摘要翻译：根据本实施例的游戏装置包括作为图像拾取装置的相机。内部照相机容纳在上部外壳中。此外，麦克风孔设置在上壳体的内表面中，以便通过麦克风感测外部声音。

28. 发明授权

US08470090B2 AlN crystal and method for growing the same, and AlN crystal substrate 有权
标题翻译： AlN晶体和生长方法相同，和AlN晶体衬底
公开(公告)号：US08470090B2
公开(公告)日：2013-06-25
申请号：US11997153
申请日：2006-07-10
申请人： Naho Mizuhara , Michimasa Miyanaga , Tomohiro Kawase , Shinsuke Fujiwara
发明人： Naho Mizuhara , Michimasa Miyanaga , Tomohiro Kawase , Shinsuke Fujiwara
IPC分类号： C30B23/06
CPC分类号： C30B23/02 , C30B23/066 , C30B25/02 , C30B29/403 , Y10T428/2982
摘要： Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24).
摘要翻译：提供适用于具有优异结晶度的各种类型的半导体器件的大直径AlN晶体，生长AlN晶体的方法和AlN晶体衬底。 AlN晶体生长方法是通过气相外延生长AlN晶体（4）到放置在晶体生长容器（12）内的晶体生长室（24）内的晶种衬底（2）上的方法，提供在反应室内，其特征在于，在晶体生长期间，含碳气体被供应到晶体生长室（24）的内部。

29. 发明申请

US20130008370A1 METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：生产半导体单晶的方法
公开(公告)号：US20130008370A1
公开(公告)日：2013-01-10
申请号：US13636477
申请日：2011-03-28
申请人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
发明人： Takashi Sakurada , Tomohiro Kawase , Yoshiaki Hagi
IPC分类号： C30B17/00
CPC分类号： C30B27/00 , C30B11/00 , C30B29/40
摘要： Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.
摘要翻译：涉及一种在半导体单晶中产生抑制缺陷的半导体晶体的制造方法。该制造方法包括以下步骤：在具有与底部连续的底部和主体部分的生长容器的内壁上形成氧化硼膜; 使氧化硼膜与含有氧化硅的氧化硼熔体接触，在生长容器的内壁上形成含有氧化硅的氧化硼膜; 在置于生长容器底部和底部的晶种上形成原料熔体; 并且从晶种侧固化原料熔融物以生长半导体单晶。

30. 发明授权

US08149315B2 System and method for changing display of an image during a changed state of electronic device 有权
标题翻译：在电子设备改变状态下改变图像显示的系统和方法
公开(公告)号：US08149315B2
公开(公告)日：2012-04-03
申请号：US12243355
申请日：2008-10-01
申请人： Yoshihiro Matsushima , Tomohiro Kawase
发明人： Yoshihiro Matsushima , Tomohiro Kawase
IPC分类号： H04N5/222
CPC分类号： G06F3/0482 , G06F3/04842 , G06F3/0488 , G06F9/445 , H04N5/23293 , H04N2101/00 , Y02D10/43
摘要： An information processing apparatus capable of being opened and closed includes storage means, display means, and taken image display control means. The storage means stores a taken image therein. The display means has a display screen provided in a surface which is located inside when the information processing apparatus is closed and which is located outside when the information processing apparatus is opened. The taken image display control means displays a taken image on the display screen, and changes a taken image to be displayed between before and after closing and opening the information processing apparatus when the information processing apparatus is closed and opened again.
摘要翻译：能够打开和关闭的信息处理装置包括存储装置，显示装置和拍摄图像显示控制装置。存储装置将拍摄图像存储在其中。显示装置具有设置在当信息处理装置关闭时位于内部并且当信息处理装置打开时位于外部的表面中的显示屏幕。拍摄图像显示控制装置在显示屏幕上显示拍摄图像，并且当信息处理装置再次闭合并打开时，在关闭和打开信息处理装置之前和之后改变要显示的拍摄图像。

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