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1. 发明授权

US07998847B2 III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device 有权
标题翻译： III族氮化物晶体制造方法，III族氮化物晶体衬底和III族氮化物半导体器件
公开(公告)号：US07998847B2
公开(公告)日：2011-08-16
申请号：US12297311
申请日：2007-11-15
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L21/36
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（1t）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

2. 发明授权

US08310030B2 III-nitride crystal substrate and III-nitride semiconductor device 有权
标题翻译： III族氮化物晶体衬底和III族氮化物半导体器件
公开(公告)号：US08310030B2
公开(公告)日：2012-11-13
申请号：US13178479
申请日：2011-07-07
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L29/02 , H01L21/20
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（it）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

3. 发明申请

US20090315150A1 III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Substrate, and III-Nitride Semiconductor Device 有权
标题翻译： III型氮化物晶体制造方法，III型氮化物晶体基板和III型氮化物半导体装置
公开(公告)号：US20090315150A1
公开(公告)日：2009-12-24
申请号：US12297311
申请日：2007-11-15
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L29/20 , C30B19/00
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在s）; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（1t）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

4. 发明申请

US20110260295A1 III-Nitride Crystal Substrate and III-Nitride Semiconductor Device 有权
标题翻译： III型氮化物晶体基板和III型氮化物半导体器件
公开(公告)号：US20110260295A1
公开(公告)日：2011-10-27
申请号：US13178479
申请日：2011-07-07
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
IPC分类号： H01L29/02 , H01L21/20
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译：提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（it）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

5. 发明授权

US08801912B2 Continuous copper electroplating method 有权
标题翻译：连续铜电镀方法
公开(公告)号：US08801912B2
公开(公告)日：2014-08-12
申请号：US12401113
申请日：2009-03-10
申请人： Naoyuki Omura , Toshihisa Isono , Koji Shimizu , Shinji Tachibana , Tomohiro Kawase , Shunsaku Hoshi
发明人： Naoyuki Omura , Toshihisa Isono , Koji Shimizu , Shinji Tachibana , Tomohiro Kawase , Shunsaku Hoshi
IPC分类号： C25D21/18 , C25D17/00 , C25D3/38 , H05K3/24
CPC分类号： C25D17/00 , C25D3/38 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/18 , H05K3/241
摘要： Disclosed is a method for a repeated electroplating of a workpiece to be plated as a cathode by using an insoluble anode in a plating vessel accommodating a copper sulfate plating bath, wherein a copper dissolution vessel different from the plating vessel is provided, the plating bath is transferred to the copper dissolution vessel and is returned from the copper dissolution vessel to the plating vessel for circulating the plating bath between the plating vessel and the copper dissolution vessel, copper ion supplying salt is charged into the copper dissolution vessel and dissolved in the plating bath so that copper ions consumed by the plating can be replenished, and the workpiece to be plated is continuously electroplated, characterized in that the plating bath is permitted to transfer between the anode side and the cathode side, and the plating bath is returned to vicinity of the anode in the return of the plating bath from the copper dissolution vessel to the plating vessel. Plating performance impairing components, which are produced when the copper ion supplying salt is dissolved in the plating bath for replenishing the copper ions, are oxidized and decomposed, whereby defective plating due to the presence of the plating performance impairing components can be prevented.
摘要翻译：公开了一种通过在容纳硫酸铜电镀浴的电镀槽中使用不溶性阳极来重复电镀作为阴极的工件的方法，其中提供了不同于电镀槽的铜溶解容器，电镀浴是转移到铜溶解容器中，并从铜溶解容器返回到电镀槽，用于使电镀槽和铜溶解容器之间的电镀槽循环，将铜离子供应盐装入铜溶解容器中并溶解在镀浴中使得可以补充由电镀消耗的铜离子，并且将被镀工件连续电镀，其特征在于允许电镀液在阳极侧和阴极侧之间转移，电镀浴返回到阳极将电镀液从铜溶解容器返回到电镀槽中。当铜离子供应盐溶解在用于补充铜离子的镀浴中时产生的电镀性能损害部件被氧化分解，从而可以防止由于存在电镀性能损害部件而导致的不良电镀。

6. 发明授权

US08679317B2 Copper electroplating bath 有权
标题翻译：铜电镀浴
公开(公告)号：US08679317B2
公开(公告)日：2014-03-25
申请号：US12599436
申请日：2007-05-21
申请人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
发明人： Toshihisa Isono , Shinji Tachibana , Tomohiro Kawase , Naoyuki Omura
IPC分类号： C25D3/00 , C25D3/38 , C25D3/02 , H01L21/02 , H05K3/42
CPC分类号： C25D3/38 , C25D3/00 , C25D3/02 , H01L21/02 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H05K3/423 , H05K3/424
摘要： A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.
摘要翻译：一种铜电镀槽，其可用于填充形成在包含水溶性铜盐，硫酸和氯离子的基底上的非通孔，并且还包含作为添加剂的增白剂，载体和矫味剂，其中所述矫平剂含有含有在溶液中可阳离子化的季氮，叔氮或二者的至少一种水溶性聚合物。在铜电镀槽中，通过将水溶性聚合物的季氮与叔氮比例变更为容易控制，可以容易地控制在基板上形成的非贯通孔的填充力，以适应孔的尺寸用作平整机，其使得能够对各种尺寸的非通孔的铜电镀具有很好的尺寸。

7. 发明授权

US08361226B2 III-nitride single-crystal growth method 有权
标题翻译： III族氮化物单晶生长法
公开(公告)号：US08361226B2
公开(公告)日：2013-01-29
申请号：US12067936
申请日：2007-03-22
申请人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Hideaki Nakahata , Tomohiro Kawase
发明人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Hideaki Nakahata , Tomohiro Kawase
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C30B23/00
摘要： This III-nitride single-crystal growth method, being a method of growing a AlxGa1-xN single crystal (4) by sublimation, is furnished with a step of placing source material (1) in a crucible (12), and a step of sublimating the source material (1) to grow AlxGa1-xN (0
摘要翻译：作为通过升华生长Al x Ga 1-x N单晶（4）的方法的III族氮化物单晶生长方法具有将源材料（1）放置在坩埚（12）中的步骤，并且使源材料（1）升华以在坩埚（12）中生长Al x Ga 1-x N（0

8. 再颁专利

USRE42279E1 Method of preparing a compound semiconductor crystal 有权
标题翻译：化合物半导体晶体的制备方法
公开(公告)号：USRE42279E1
公开(公告)日：2011-04-12
申请号：US12341876
申请日：2008-12-22
申请人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
IPC分类号： C30B9/00
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.
摘要翻译：制备化合物半导体晶体的方法能够以高重现性将碳掺杂。该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。

9. 发明申请

US20090072205A1 INDIUM PHOSPHIDE SUBSTRATE, INDIUM PHOSPHIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THEM 审中-公开
标题翻译：磷酸铟衬底，磷化铟单晶及其生产工艺
公开(公告)号：US20090072205A1
公开(公告)日：2009-03-19
申请号：US12209803
申请日：2008-09-12
申请人： Tomohiro Kawase
发明人： Tomohiro Kawase
IPC分类号： H01B1/02 , C30B17/00
CPC分类号： C30B29/40 , C30B11/00
摘要： An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lower end of a growth container. The growth container housing the seed crystal, indium phosphide raw material, dopant, and boron oxide is placed in a crystal growth chamber. The temperature is raised to at or above the melting point of indium phosphide. After melting the boron oxide, indium phosphide raw material, and dopant, the temperature of the growth container is lowered in order to obtain an indium phosphide monocrystal. An average dislocation density is a function of a carrier density and diameter of the substrate, dislocation density, and a dopant concentration on the wafer is substantially uniform in the depth direction.
摘要翻译：如下获得半导体器件用磷化铟基板。为了具有<100>方向的晶体的生长方向，将具有与晶体的规定截面积比的晶种放置在生长容器的下端。容纳晶种，磷化铟原料，掺杂剂和氧化硼的生长容器放置在晶体生长室中。将温度升高至等于或高于磷化铟的熔点。在熔化氧化硼，磷化铟原料和掺杂剂之后，降低生长容器的温度以获得磷化铟单晶。平均位错密度是衬底的载流子浓度和直径，位错密度和晶片上的掺杂剂浓度在深度方向上基本均匀的函数。

10. 发明申请

US20070101924A1 Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof 有权
标题翻译：磷化铟基片和磷化铟单晶及其制造方法
公开(公告)号：US20070101924A1
公开(公告)日：2007-05-10
申请号：US10551923
申请日：2004-05-06
申请人： Tomohiro Kawase
发明人： Tomohiro Kawase
IPC分类号： H01L21/322
CPC分类号： C30B11/00 , C30B29/40
摘要： An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lower end of a growth container. The growth container housing the seed crystal, indium phosphide raw material, dopant, and boron oxide is placed in a crystal growth chamber. The temperature is raised to at or above the melting point of indium phosphide. After melting the boron oxide, indium phosphide raw material, and dopant, the temperature of the growth container is lowered in order to obtain an indium phosphide monocrystal having a low dislocation density and a uniform dopant concentration on the wafer as well as in the depth direction.
摘要翻译：如下获得半导体器件用磷化铟基板。为了具有<100>方向的晶体的生长方向，将具有与晶体的特定截面积比的晶种放置在生长容器的下端。容纳晶种，磷化铟原料，掺杂剂和氧化硼的生长容器放置在晶体生长室中。将温度升高至等于或高于磷化铟的熔点。在熔化氧化硼，磷化铟原料和掺杂剂之后，降低生长容器的温度，以便获得在晶片上以及在深度方向上具有低位错密度和均匀掺杂剂浓度的磷化铟单晶。

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