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21. 发明授权

US07303662B2 Contacts for electrochemical processing 有权
标题翻译：电化学处理接点
公开(公告)号：US07303662B2
公开(公告)日：2007-12-04
申请号：US10210972
申请日：2002-08-02
申请人： Rashid Mavliev , Stan Tsai , Yongqi Hu , Paul Butterfield , Antoine Manens , Liang-Yuh Chen
发明人： Rashid Mavliev , Stan Tsai , Yongqi Hu , Paul Butterfield , Antoine Manens , Liang-Yuh Chen
IPC分类号： C25F3/16 , C25F3/30 , C25F7/00
CPC分类号： B23H5/08 , B24B37/046 , B24B37/20 , H01L21/32125
摘要： Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.
摘要翻译：电化学处理的系统和方法。接触元件限定在处理期间可定位成接触衬底的衬底接触表面。在一个实施例中，接触元件包括线元件。在另一个实施例中，接触元件是旋转构件。在一个实施例中，接触元件包括贵金属。

22. 发明申请

US20070102303A1 METHOD AND COMPOSITION FOR ELECTROCHEMICALLY POLISHING A CONDUCTIVE MATERIAL ON A SUBSTRATE 失效
标题翻译：用于电化学抛光衬底上的导电材料的方法和组合物
公开(公告)号：US20070102303A1
公开(公告)日：2007-05-10
申请号：US11556593
申请日：2006-11-03
申请人： HUYEN TRAN , RENHE JIA , YOU WANG , STAN TSAI , MARTIN WOHLERT , DAXIN MAO
发明人： HUYEN TRAN , RENHE JIA , YOU WANG , STAN TSAI , MARTIN WOHLERT , DAXIN MAO
IPC分类号： B23H3/00
CPC分类号： B23H5/08
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。该方法包括提供包括介电特征定义的基底，设置在特征定义中的阻挡材料和以足以填充特征定义的量设置在阻挡材料上的体导电材料; 抛光衬底以基本上去除体导电材料; 抛光残余导电材料以暴露特征定义，包括：施加第一电压第一时间段，其中所述第一电压小于所述临界电压; 以及施加第二时间段的第二电压，其中所述第二电压大于所述临界电压。

23. 发明申请

US20070099552A1 CONDUCTIVE PAD WITH ION EXCHANGE MEMBRANE FOR ELECTROCHEMICAL MECHANICAL POLISHING 失效
标题翻译：带有离子交换膜的电化学机械电化学机械抛光
公开(公告)号：US20070099552A1
公开(公告)日：2007-05-03
申请号：US11555145
申请日：2006-10-31
申请人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
发明人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
IPC分类号： B23F21/03
CPC分类号： B24B37/046 , B24B27/0023 , B24B37/24 , B24B37/26 , B24D3/34 , B82Y30/00
摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.
摘要翻译：提供了一种用于处理基板表面的制造和设备。在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。电极设置在其间具有介电材料的抛光表面下方。可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

24. 发明申请

US20070066201A1 CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING 有权
标题翻译：电化学机械抛光导电抛光法
公开(公告)号：US20070066201A1
公开(公告)日：2007-03-22
申请号：US11556011
申请日：2006-11-02
申请人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai
发明人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai
IPC分类号： B23F21/03
CPC分类号： B82Y30/00 , B24B37/046 , B24B37/24 , B24B37/26 , B24D3/34
摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.
摘要翻译：提供了一种用于平坦化基板表面的制造和设备。在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底的至少部分导电表面的主体。可以在抛光制品中形成多个穿孔，以使材料流过其中。电极还通过多个穿孔的至少一部分暴露于抛光表面。制品还可以包括具有多个凹槽的抛光表面，其中多个凹槽的一部分与多个穿孔的一部分相交。

25. 发明申请

US20060249394A1 Process and composition for electrochemical mechanical polishing 审中-公开
标题翻译：电化学机械抛光的工艺和组成
公开(公告)号：US20060249394A1
公开(公告)日：2006-11-09
申请号：US11251630
申请日：2005-10-14
申请人： Renhe Jia , You Wang , Zhihong Wang , Jie Diao , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , You Wang , Zhihong Wang , Jie Diao , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： C09K13/00 , B23H9/00 , C25F3/00 , C09K13/06
CPC分类号： C25F3/02 , B23H5/08 , C09K3/1463
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

26. 发明申请

US20060196778A1 Tungsten electroprocessing 审中-公开
标题翻译：钨电加工
公开(公告)号：US20060196778A1
公开(公告)日：2006-09-07
申请号：US11342179
申请日：2006-01-27
申请人： Renhe Jia , Zhihong Wang , Yuan Tian , Huyen Tran , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , Zhihong Wang , Yuan Tian , Huyen Tran , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： B23H9/00 , C25D17/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/08
摘要： Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.
摘要翻译：提供钨的抛光方法。在ECMP期间，增加焊盘的电压并不总是足以提高抛光速率。抛光钨时，简单地增加施加的电压将在某些情况下实际上降低去除率。通过增加抛光垫和基板之间的下压力，施加电压以及基板和抛光垫的旋转速度，钨去除率也将增加。

27. 发明申请

US20060175298A1 Method and composition for polishing a substrate 审中-公开
标题翻译：抛光基材的方法和组合物
公开(公告)号：US20060175298A1
公开(公告)日：2006-08-10
申请号：US11350051
申请日：2006-02-07
申请人： Junzi Zhao , You Wang , Feng Liu , Stan Tsai
发明人： Junzi Zhao , You Wang , Feng Liu , Stan Tsai
IPC分类号： C09K13/00 , C09K13/06 , H01L21/461 , B44C1/22 , C03C25/68
CPC分类号： H01L21/7684 , B24B37/044 , C09G1/02 , C09G1/04 , C25F3/02 , H01L21/32125
摘要： Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a substrate surface including an acid based electrolyte system, one or more chelating agents, one or more pH adjusting agents to provide a pH between about 3 and about 11, and a solvent. The composition may be used in an electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of barrier materials from the substrate surface with a reduction in planarization type defects.
摘要翻译：提供了用于从衬底表面去除阻挡材料的抛光组合物和方法。一方面，提供一种组合物，用于从基材表面至少除去阻挡材料，所述基材表面包括酸性电解质体系，一种或多种螯合剂，一种或多种pH调节剂以提供约3至约11的pH，以及溶剂。该组合物可用于电化学机械平面化工艺中。本文所述的抛光组合物和方法通过减小平坦化型缺陷来提高阻挡材料从衬底表面的有效去除速率。

28. 发明授权

US07022608B2 Method and composition for the removal of residual materials during substrate planarization 失效
公开(公告)号：US07022608B2
公开(公告)日：2006-04-04
申请号：US10419440
申请日：2003-04-21
申请人： Lizhong Sun , Stan Tsai , Shijian Li
发明人： Lizhong Sun , Stan Tsai , Shijian Li
IPC分类号： H01L21/302
CPC分类号： C09G1/02
摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

29. 发明申请

US20050092620A1 Methods and apparatus for polishing a substrate 审中-公开
标题翻译：抛光基材的方法和设备
公开(公告)号：US20050092620A1
公开(公告)日：2005-05-05
申请号：US10957199
申请日：2004-10-01
申请人： Rashid Mavliev , Alain Duboust , Stan Tsai
发明人： Rashid Mavliev , Alain Duboust , Stan Tsai
IPC分类号： B23H5/08 , B24B37/04 , B24B57/02 , C25F3/02 , H01L21/321 , B23H3/00
CPC分类号： B24B37/345 , B23H5/08 , B24B37/042 , B24B57/02 , C25F3/02 , H01L21/32125
摘要： Polishing compositions and methods for removing conductive material and barrier layer materials from a substrate surface are provided. Generally, variable amounts of abrasive particles are used for removing conductive material and barrier layer materials. In one aspect, a process is provided including providing an polishing composition between the first electrode and the substrate, wherein the polishing composition comprises a first concentration of abrasive particles, applying a bias between the first electrode and the second electrode, providing relative motion between the substrate and the polishing article, removing conductive layer material from the substrate, introducing abrasive particles to the polishing composition to form a second concentration of abrasive particles greater than a first concentration of abrasive particles, and removing barrier layer material from the substrate. The abrasive particles may be incrementally introduced or pulsed during a polishing process.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料和阻挡层材料的方法。通常，可用量的磨料颗粒用于去除导电材料和阻挡层材料。在一个方面，提供了一种方法，包括在第一电极和衬底之间提供抛光组合物，其中抛光组合物包含第一浓度的磨料颗粒，在第一电极和第二电极之间施加偏压，衬底和抛光制品，从衬底移除导电层材料，将磨料颗粒引入抛光组合物以形成大于第一浓度的磨料颗粒的第二浓度的磨料颗粒，以及从衬底去除阻挡层材料。研磨颗粒可以在抛光过程中递增地引入或脉冲。

30. 发明授权

US06309276B1 Endpoint monitoring with polishing rate change 有权
标题翻译：端点监测与抛光速率变化
公开(公告)号：US06309276B1
公开(公告)日：2001-10-30
申请号：US09495616
申请日：2000-02-01
申请人： Stan Tsai , Fred C. Redeker , Kapila Wijekoon
发明人： Stan Tsai , Fred C. Redeker , Kapila Wijekoon
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , B24B49/12
摘要： A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.
摘要翻译：具有设置在第二层上的第一层的衬底被化学机械抛光。抛光端点检测系统生成监视端点标准的信号。当第一层的主体已被去除但在第二层被暴露之前，衬底的抛光速率降低。例如，当抛光时间接近预期的抛光结束时间但在检测到端点标准之前，抛光速率降低。一旦在底层暴露后检测到终点标准，抛光停止。

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