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21. 发明授权

US5286297A Multi-electrode plasma processing apparatus 失效
标题翻译：多电极等离子体处理装置
公开(公告)号：US5286297A
公开(公告)日：1994-02-15
申请号：US903637
申请日：1992-06-24
申请人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
发明人： Mehrdad M. Moslehi , Cecil J. Davis , John Jones , Robert T. Matthews
IPC分类号： H01L21/205 , C23C16/44 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C14/22
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/509 , C23C16/517 , H01J37/32165 , H01J37/32192 , H01J37/32541 , H01J37/32587 , H01J37/32688 , Y10S438/905
摘要： A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity. The circuitry (74) electrically connect screen (70) to a power source (100) or (104) to cause screen (70) electrode to affect process plasma density and distribution. Any of the plasma electrodes showerhead assembly (52), chuck (24), or screen electrode (66) may be connected to a low-frequency power source (108), a high-frequency power source (100 or 132), electrical ground (110), or may remain electrically floating (94).
摘要翻译：多电极等离子体处理系统（10）为半导体器件制造提供了灵活的等离子体处理能力。等离子体处理设备（10）包括气体喷头组件（52），射频卡盘（24）和屏幕电极（66）。屏幕电极（66）包括用于定位在处理室（10）内的基座（68），并且由诸如陶瓷或聚四氟乙烯的绝缘材料制成。穿孔筛（70）与基部（68）成一体，并且经由射频电源（104）从等离子体产生气体产生等离子体。屏幕（70）具有许多通道（78），以允许等离子体和处理室壁的相互作用。屏幕（70）围绕喷头组件（52）和半导体晶片（22）并且可以影响包括等离子体密度和均匀性的整个半导体晶片等离子体处理环境（62）。电路（74）将屏幕（70）电连接到电源（100）或（104）以使屏幕（70）电极影响处理等离子体密度和分布。任何等离子电极喷头组件（52），卡盘（24）或屏蔽电极（66）可以连接到低频电源（108），高频电源（100或132），电接地（110），或者可以保持电浮动（94）。

22. 发明授权

US5138973A Wafer processing apparatus having independently controllable energy sources 失效
标题翻译：具有独立可控能量源的晶片处理装置
公开(公告)号：US5138973A
公开(公告)日：1992-08-18
申请号：US282917
申请日：1988-12-05
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/54
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

23. 发明授权

US4949671A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4949671A
公开(公告)日：1990-08-21
申请号：US292624
申请日：1985-12-21
申请人： Cecil J. Davis , Robert T. Matthews , Rudy L. York , Joseph D. Luttmer , Dwain R. Jakubik , James B. Hunter
发明人： Cecil J. Davis , Robert T. Matthews , Rudy L. York , Joseph D. Luttmer , Dwain R. Jakubik , James B. Hunter
IPC分类号： H01J37/32
CPC分类号： H01J37/3244
摘要： A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.
摘要翻译：一种处理装置和方法，其中在面向下的晶片的表面附近提供两个单独的气体进料。可以使用护罩来最大化两种气体进料流的混合而没有过多的停留时间。

24. 发明授权

US4832777A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4832777A
公开(公告)日：1989-05-23
申请号：US198634
申请日：1988-05-18
申请人： Cecil J. Davis , Robert T. Matthews
发明人： Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A process module having a heating module with two heating rings and a reflector. The heating rings are separately controlled in order to provide a variety of heating configurations to a wafer. A transparent wall or a conductive substrate is provided between the heating rings and a workpiece which is to be heated.
摘要翻译：一种具有具有两个加热环的加热模块和反射器的处理模块。加热环被单独控制，以便向晶片提供各种加热构型。在加热环和待加热的工件之间设置有透明壁或导电基板。

25. 发明授权

US4818327A Wafer processing apparatus 失效
标题翻译：晶圆加工设备
公开(公告)号：US4818327A
公开(公告)日：1989-04-04
申请号：US74419
申请日：1987-07-16
申请人： Cecil J. Davis , Robert T. Matthews
发明人： Cecil J. Davis , Robert T. Matthews
IPC分类号： H01L21/00 , B44C1/22 , C23C14/00 , C23F1/02 , H01L21/306
CPC分类号： H01L21/67115
摘要： A processing apparatus and method for rapid thermal processing wherein the radiant heat source is dynamically reconfigurable to change the heating distribution across the radii of the wafer. Since the radiative and conductive heat flow paths from parts of the wafer near the center are different from the heat flow paths for the parts of the wafer near the edge, the loadings will change dynamically as the wafer is heated and cooled. This temperature dependence in the relative couplings across the wafer makes it very difficult to maintain a flat temperature profile during heatup and cooldown, and failure to maintain a flat temperature profile can cause wafer damage (especially wafer warpage). The present application describes a processing apparatus and method which changes the distribution dynamically, so that a higher fraction of the total power is provided to the wafer edge regions after the wafer is at high temperature. This can be done by using (as a radiant heat source) a lamp module wherein the central portion of the lamp reflector module is mechanically moved in and out to change the center to edge distribution of heating power.
摘要翻译：一种用于快速热处理的处理装置和方法，其中辐射热源是动态可重构的，以改变横跨晶片半径的加热分布。由于靠近中心的晶片部分的辐射和导电热流路径不同于靠近边缘的晶片部分的热流路径，所以当晶片被加热和冷却时，负载将动态变化。在晶圆相对耦合中的这种温度依赖性使得在加热和冷却期间保持平坦的温度分布非常困难，并且不能保持平坦的温度分布可能导致晶片损坏（特别是晶片翘曲）。本申请描述了动态地改变分布的处理装置和方法，使得在晶片处于高温之后，将总功率的较高部分提供给晶片边缘区域。这可以通过使用（作为辐射热源）灯模块来完成，其中灯反射器模块的中心部分被机械地移入和移出以改变加热功率的中心到边缘分布。

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