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    • 22. 发明申请
    • COOLING DEVICE FOR A POWER MODULE, AND A RELATED METHOD THEREOF
    • 用于功率模块的冷却装置及其相关方法
    • US20120327603A1
    • 2012-12-27
    • US13168030
    • 2011-06-24
    • Richard Alfred BeaupreJoseph Lucian SmolenskiWilliam Dwight GerstlerXiaochun Shen
    • Richard Alfred BeaupreJoseph Lucian SmolenskiWilliam Dwight GerstlerXiaochun Shen
    • H05K7/20B23P19/00F28F9/02
    • H01L23/473H01L2924/0002Y10T29/49817H01L2924/00
    • A cooling device for a power module having an electronic module disposed on a base plate via a substrate is disclosed. The cooling device includes a heat sink plate having at least one cooling segment. The cooling segment includes an inlet plenum for entry of a cooling medium, a plurality of inlet manifold channels, a plurality of outlet manifold channels, and an outlet plenum. The plurality of inlet manifold channels are coupled orthogonally to the inlet plenum for receiving the cooling medium from the inlet plenum. The plurality of outlet manifold channels are disposed parallel to the inlet manifold channels. The outlet plenum is coupled orthogonally to the plurality of outlet manifold channels for exhaust of the cooling medium. A plurality of millichannels are disposed in the base plate orthogonally to the inlet and the outlet manifold channels. The plurality of milli channels direct the cooling medium from the plurality of inlet manifold channels to the plurality of outlet manifold channels.
    • 公开了一种具有通过基板设置在基板上的电子模块的功率模块的冷却装置。 冷却装置包括具有至少一个冷却段的散热板。 冷却段包括用于进入冷却介质的入口增压室,多个入口歧管通道,多个出口歧管通道和出口增压室。 多个入口歧管通道正交地连接到入口气室,用于从入口通风室接收冷却介质。 多个出口歧管通道平行于入口歧管通道设置。 出口增压室正交地连接到多个出口歧管通道,用于排出冷却介质。 多个毫通道与入口和出口歧管通道正交地布置在基板中。 多个毫通道将冷却介质从多个入口歧管通道引导到多个出口歧管通道。
    • 25. 发明授权
    • Power converting apparatus having improved electro-thermal characteristics
    • 具有改善的电热特性的电力转换装置
    • US08675379B2
    • 2014-03-18
    • US13204834
    • 2011-08-08
    • Joseph Lucian SmolenskiMichael SchuttenEladio Clemente DelgadoRichard Alfred Beaupre
    • Joseph Lucian SmolenskiMichael SchuttenEladio Clemente DelgadoRichard Alfred Beaupre
    • H05K7/20H02M7/5387
    • H01L25/16H01L2924/0002H02M7/003H05K7/1432H01L2924/00
    • A power-converting apparatus, such as a power module, may include a base plate (16), a first direct current (DC) bus and a second DC bus (22, 24). A power semiconductor component (18, 20) may be electrically coupled to one of the buses, and may be disposed on a substrate (12, 14) physically coupled to the base plate. The power semiconductor component may be made from a high-temperature, wide bandgap material, and the substrate may be exposed to a heat flux based on an operational temperature of the power semiconductor component. At least a first capacitor (50) may be coupled across the first and second DC buses, and at least second and third capacitors (52) may be respectively coupled across respective ones of the first and second buses and an alternating current (AC) return path. Capacitors (50, 52) may each be located inside the power module to establish circuit connections sufficiently proximate to the first power semiconductor component to reduce a formation of parasitic inductances, and further may each be located physically apart from the substrate and thus not exposed to the heat flux.
    • 诸如功率模块的电力转换装置可以包括基板(16),第一直流(DC)总线和第二DC总线(22,24)。 功率半导体部件(18,20)可以电耦合到总线中的一个,并且可以设置在物理耦合到基板的基板(12,14)上。 功率半导体部件可以由高温,宽带隙材料制成,并且基板可以基于功率半导体部件的工作温度暴露于热通量。 至少第一电容器(50)可以跨越第一和第二DC总线耦合,并且至少第二和第三电容器(52)可以分别耦合在第一和第二总线中的相应的第一和第二总线上,并且交流(AC)返回 路径。 电容器(50,52)可以各自位于功率模块内部,以建立足够靠近第一功率半导体部件的电路连接,以减少寄生电感的形成,并且还可以分别位于与衬底物理分开的位置,从而不暴露于 热通量。
    • 27. 发明申请
    • POWER-CONVERTING APPARATUS HAVING IMPROVED ELECTRO-THERMAL CHARACTERISTICS
    • 具有改进的电热特性的动力转换装置
    • US20130039103A1
    • 2013-02-14
    • US13204834
    • 2011-08-08
    • JOSEPH LUCIAN SMOLENSKIMICHAEL SCHUTTENELADIO CLEMENTE DELGADORICHARD ALFRED BEAUPRE
    • JOSEPH LUCIAN SMOLENSKIMICHAEL SCHUTTENELADIO CLEMENTE DELGADORICHARD ALFRED BEAUPRE
    • H02M7/00
    • H01L25/16H01L2924/0002H02M7/003H05K7/1432H01L2924/00
    • A power-converting apparatus, such as a power module, may include a base plate (16), a first direct current (DC) bus and a second DC bus (22, 24). A power semiconductor component (18, 20) may be electrically coupled to one of the buses, and may be disposed on a substrate (12, 14) physically coupled to the base plate. The power semiconductor component may be made from a high-temperature, wide bandgap material, and the substrate may be exposed to a heat flux based on an operational temperature of the power semiconductor component. At least a first capacitor (50) may be coupled across the first and second DC buses, and at least second and third capacitors (52) may be respectively coupled across respective ones of the first and second buses and an alternating current (AC) return path. Capacitors (50, 52) may each be located inside the power module to establish circuit connections sufficiently proximate to the first power semiconductor component to reduce a formation of parasitic inductances, and further may each be located physically apart from the substrate and thus not exposed to the heat flux.
    • 诸如功率模块的电力转换装置可以包括基板(16),第一直流(DC)总线和第二DC总线(22,24)。 功率半导体部件(18,20)可以电耦合到总线中的一个,并且可以设置在物理耦合到基板的基板(12,14)上。 功率半导体部件可以由高温,宽带隙材料制成,并且基板可以基于功率半导体部件的工作温度暴露于热通量。 至少第一电容器(50)可以跨越第一和第二DC总线耦合,并且至少第二和第三电容器(52)可以分别耦合在第一和第二总线中的相应的第一和第二总线上,并且交流(AC)返回 路径。 电容器(50,52)可以各自位于功率模块内部,以建立足够靠近第一功率半导体部件的电路连接,以减少寄生电感的形成,并且还可以分别位于与衬底物理分开的位置,从而不暴露于 热通量。