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    • 29. 发明申请
    • EUV COLLECTOR DEBRIS MANAGEMENT
    • EUV收集器破产管理
    • WO2006049886A3
    • 2009-03-05
    • PCT/US2005037725
    • 2005-10-20
    • CYMER INCPARTLO WILLIAM NFOMENKOV IGOR VERSHOV ALEXANDER IOLDHAM WILLIAMHEMBERG OSCARMARX WILLIAM F
    • PARTLO WILLIAM NFOMENKOV IGOR VERSHOV ALEXANDER IOLDHAM WILLIAMHEMBERG OSCARMARX WILLIAM F
    • H01L21/302H01L21/306
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。
    • 30. 发明申请
    • METHOD AND APPARATUS FOR STABILIZING AND TUNING THE BANDWIDTH OF LASER LIGHT
    • 用于稳定和调谐激光束带宽的方法和装置
    • WO2008127599A3
    • 2008-12-11
    • PCT/US2008004598
    • 2008-04-09
    • CYMER INC A NEVADA CORPPARTLO WILLIAM NJACQUES ROBERT NO'BRIEN KEVIN MISHIHARA TOSHIHIKO
    • PARTLO WILLIAM NJACQUES ROBERT NO'BRIEN KEVIN MISHIHARA TOSHIHIKO
    • H01S3/22
    • H01S3/1055G02B27/646H01S3/137H01S3/139H01S3/225H01S2301/02
    • According to aspects of an embodiment of the disclosed subject matter, method and apparatus are disclose that ma y comprise adjusting a differential timing between gas discharges in the seed laser and amplifier laser for bandwidth control, based on the error signal, or for control of another laser operating parameter other than bandwidth, without utilizing any beam magnification control, or adjusting a differential timing between gas discharges in the seed laser and amplifier laser for bandwidth control, based on the error signal, or for control of another laser operating parameter other than bandwidth, while utilizing beam magnification control for other than bandwidth control, and adjusting a differential timing between gas discharges in the seed laser and amplifier laser for bandwidth control, based on the error signal, or for control of another laser operating parameter other than bandwidth, while utilizing beam magnification control for bandwidth control based on the error signal.
    • 根据所公开的主题的实施例的方面,公开了一种方法和装置,其包括基于误差信号调整种子激光器中的气体放电与用于带宽控制的放大器激光器之间的差分定时,或用于控制另一个 除了带宽之外的激光操作参数,不利用任何光束放大控制,或者基于误差信号调整种子激光器和放大器激光器中的气体放电之间的差分定时,或用于控制除带宽之外的另一个激光器操作参数 同时利用除带宽控制之外的光束放大控制,并且基于误差信号调整种子激光器和放大器激光器中的气体放电之间的差分定时,或用于控制除带宽之外的另一激光器操作参数,同时 利用基于误差信号的带宽控制的光束放大控制。