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21. 发明申请

US20130302952A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130302952A1
公开(公告)日：2013-11-14
申请号：US13580963
申请日：2012-06-07
申请人： Jun Luo , Jian Deng , Chao Zhao , Junfeng Li , Dapeng Chen
发明人： Jun Luo , Jian Deng , Chao Zhao , Junfeng Li , Dapeng Chen
IPC分类号： H01L21/336
CPC分类号： H01L29/7833 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： The present invention discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a gate stack structure on a substrate; forming source and drain regions as well as a gate spacer on both sides of the gate stack structure; depositing a first metal layer on the source and drain regions; performing a first annealing such that the first metal layer reacts with the source and drain regions, to epitaxially grow a first metal silicide; depositing a second metal layer on the first metal silicide; and performing a second annealing such that the second metal layer reacts with the first metal silicide as well as the source and drain regions, to form a second metal silicide. In accordance with the method for manufacturing a semiconductor device of the present invention, by means of epitaxially growing an ultra-thin metal silicide on the source and drain regions, the grain boundaries among silicide particles are minimized or eliminated, the metal diffusion speed and direction are limited, thus the lateral growth of the metal silicide is suppressed and the device performance is further increased.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括以下步骤：在衬底上形成栅叠层结构; 在栅极堆叠结构的两侧形成源极和漏极区域以及栅极间隔物; 在所述源区和漏区上沉积第一金属层; 进行第一退火，使得第一金属层与源区和漏区反应，以外延生长第一金属硅化物; 在第一金属硅化物上沉积第二金属层; 以及执行第二退火，使得所述第二金属层与所述第一金属硅化物以及所述源极和漏极区域反应，以形成第二金属硅化物。根据本发明的半导体器件的制造方法，通过在源极和漏极区域外延生长超薄金属硅化物，硅化物粒子之间的晶界被最小化或消除，金属扩散速度和方向受限，金属硅化物的横向生长受到抑制，器件性能进一步提高。

22. 发明申请

US20130273669A1 Method for improving Uniformity of Chemical-Mechanical Planarization Process 有权
标题翻译：改善化学机械平面化过程均匀性的方法
公开(公告)号：US20130273669A1
公开(公告)日：2013-10-17
申请号：US13698283
申请日：2012-06-12
申请人： Tao Yang , Chao Zhao , Junfeng Li
发明人： Tao Yang , Chao Zhao , Junfeng Li
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , H01L21/31053 , H01L21/31056 , H01L22/26 , H01L29/66545 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method for improving uniformity of chemical-mechanical planarization process, comprising the steps of: forming features on a substrate; forming a first dielectric isolation layer between the features; planarizing the first dielectric isolation layer until the features are exposed, causing the first dielectric isolation layer between the features to have a recess depth; forming a second dielectric isolation layer on the features and the first dielectric isolation layer, whereby reducing the difference in height between the second dielectric isolation layer between the features and the second dielectric isolation layer on the top of the features; planarizing the second dielectric isolation layer until the features are exposed. According to the method for improving uniformity of chemical-mechanical planarization process of the invention, a dielectric isolation layer is formed again after grinding the dielectric isolation layer on the top of the features, such that the difference in height between the dielectric layer between the features and the dielectric layer on the top of the features is effectively reduced, and the recess of the features is compensated, the within-in-die uniformity is effectively improved.
摘要翻译：本发明提供了一种改善化学机械平面化工艺的均匀性的方法，包括以下步骤：在基底上形成特征; 在所述特征之间形成第一绝缘隔离层; 平面化第一介电隔离层直到特征被暴露，使得特征之间的第一介电隔离层具有凹陷深度; 在特征和第一介电隔离层上形成第二介电隔离层，从而减小特征之间的第二介电隔离层与特征顶部的第二介电隔离层之间的高度差; 平坦化第二介电隔离层，直到特征被暴露。根据本发明的化学机械平面化方法的均匀性的方法，在研磨特征顶部的介电隔离层之后再次形成介电隔离层，使得介电层之间的高度差并且功能顶部的电介质层被有效地减少，并且特征的凹部得到补偿，从而有效地提高了模内均匀性。

23. 发明申请

US20130213434A1 METHOD FOR ELIMINATING CONTACT BRIDGE IN CONTACT HOLE PROCESS 有权
标题翻译：在接触孔过程中消除接触桥的方法
公开(公告)号：US20130213434A1
公开(公告)日：2013-08-22
申请号：US13497768
申请日：2011-11-28
申请人： Guilei Wang , Junfeng Li , Chao Zhao
发明人： Guilei Wang , Junfeng Li , Chao Zhao
IPC分类号： H01L21/02
CPC分类号： H01L21/02 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/505 , C23C16/56 , H01L21/76837
摘要： A method for eliminating contact bridge in a contact hole process is disclosed, wherein a cleaning menu comprising a multi-step adaptive protective thin film deposition process is provided, so that a stack adaptive protective thin film is formed on the sidewall of the chamber of the HDP CVD equipment. The stack adaptive protective thin film has good adhesivity, compactness and uniformity to protect the sidewall of the chamber of the HDP CVD equipment from being damaged by the plasma, and avoid the generation of defect particles, thereby improving the HDP CVD technical yield and eliminating the contact bridge phenomenon in the contact hole process.
摘要翻译：公开了一种用于消除接触孔工艺中的接触桥的方法，其中提供了包括多步自适应保护薄膜沉积工艺的清洁菜单，使得堆叠自适应保护薄膜形成在腔室的侧壁上 HDP CVD设备。叠层自适应保护薄膜具有良好的粘合性，紧凑性和均匀性，以保护HDP CVD设备室的侧壁不被等离子体损坏，并避免产生缺陷颗粒，从而提高HDP CVD技术产量并消除接触孔过程中的接触桥现象。

24. 发明申请

US20130059435A1 Method of Manufacturing Dummy Gates in Gate Last Process 有权
标题翻译：闸门最后工序制造虚拟闸门的方法
公开(公告)号：US20130059435A1
公开(公告)日：2013-03-07
申请号：US13510730
申请日：2011-11-30
申请人： Tao Yang , Chao Zhao , Jiang Yan , Junfeng Li , Yihong Lu , Dapeng Chen
发明人： Tao Yang , Chao Zhao , Jiang Yan , Junfeng Li , Yihong Lu , Dapeng Chen
IPC分类号： H01L21/336
CPC分类号： H01L29/66545 , H01L21/28114 , H01L21/31111 , H01L21/32139 , H01L29/51
摘要： The present invention provides a method of manufacturing a dummy gate in a gate last process, which comprises the steps of forming a dummy gate material layer and a hard mask material layer sequentially on a substrate; etching the hard mask material layer to form a top-wide-bottom-narrow hard mask pattern; dry etching the dummy gate material layer using the hard mask pattern as a mask to form a top-wide-bottom-narrow dummy gate. According to the dummy gate manufacturing method of the present invention, instead of vertical dummy gates used conventionally, top-wide-bottom-narrow trapezoidal dummy gates are formed, and after removing the dummy gates, trapezoidal trenches can be formed. It facilitates the subsequent filling of the high-k or metal gate material and enlarges the window for the filling process; as a result, the device reliability will be improved.
摘要翻译：本发明提供一种在栅极最后工艺中制造虚拟栅极的方法，其包括以下步骤：在衬底上依次形成虚拟栅极材料层和硬掩模材料层; 蚀刻硬掩模材料层以形成顶部宽底部窄的硬掩模图案; 使用硬掩模图案作为掩模对伪栅极材料层进行干蚀刻以形成顶部 - 宽度 - 底部 - 窄度的虚拟栅极。根据本发明的虚拟栅极制造方法，代替常规使用的垂直虚拟栅极，形成顶部 - 宽度 - 底部 - 窄 - 窄的梯形伪栅极，并且在去除伪栅极之后，可以形成梯形沟槽。它有利于随后填充高k或金属栅极材料，并扩大了填充过程的窗口; 结果，设备的可靠性将得到提高。

25. 发明申请

US20120244784A1 CHEMICAL-MECHANICAL POLISHING TOOL AND METHOD FOR PREHEATING THE SAME 审中-公开
标题翻译：化学机械抛光工具及其预热方法
公开(公告)号：US20120244784A1
公开(公告)日：2012-09-27
申请号：US13142714
申请日：2011-04-11
申请人： Tao Yang , Chao Zhao , Junfeng Li
发明人： Tao Yang , Chao Zhao , Junfeng Li
IPC分类号： B24B53/017 , B24B1/00
CPC分类号： B24B37/015 , B24B37/20 , B24B53/017 , Y02P80/30
摘要： A chemical-mechanical polishing tool and a method for preheating the same are disclosed. The chemical-mechanical polishing tool includes: a polishing pad, a deionized water supply channel, a polishing slurry supply channel and a polishing pad conditioner; and the chemical-mechanical polishing tool further includes: a heating apparatus, adapted to heat DI water fed to the DI water supply channel; a temperature sensor, arranged close to the polishing pad to measure a temperature of the polishing pad; and a preheating control system, connected to the temperature sensor, and adapted to control the DI water supply channel to spray the heated DI water to the polishing pad, and when the temperature measured by the temperature sensor is equal to or higher than a predetermined temperature, to close the DI water supply channel, control the polishing slurry supply channel to spray polishing slurry to the polishing pad, and startup the polishing pad conditioner to dress the polishing pad. The invention can reduce the consumption of polishing consumables by the chemical-mechanical polishing tool during preheating, thereby reducing production cost.
摘要翻译：公开了一种化学机械抛光工具及其预热方法。化学机械抛光工具包括：抛光垫，去离子水供应通道，抛光浆料供应通道和抛光垫调节剂; 并且所述化学机械抛光工具还包括：加热设备，其适于加热供给到所述DI供水通道的去离子水; 温度传感器，布置在抛光垫附近以测量抛光垫的温度; 以及预热控制系统，其连接到所述温度传感器，并且适于控制所述DI供水通道将所述加热的去离子水喷射到所述抛光垫，并且当所述温度传感器测量的温度等于或高于预定温度关闭DI供水通道，控制抛光浆料供应通道将抛光浆料抛光到抛光垫上，并启动抛光垫调节剂来修整抛光垫。本发明可以通过化学机械抛光工具在预热期间减少抛光耗材的消耗，从而降低生产成本。

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