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21. 发明授权

US07413774B2 Method for controlled application of reactive vapors to produce thin films and coatings 有权
标题翻译：用于控制应用反应蒸气以产生薄膜和涂层的方法
公开(公告)号：US07413774B2
公开(公告)日：2008-08-19
申请号：US11018173
申请日：2004-12-21
申请人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
发明人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
IPC分类号： C23C16/00
CPC分类号： B82Y30/00 , B05D1/185 , B05D1/60 , B05D3/142 , B82Y40/00 , C09D4/00 , C23C16/4485 , C08G77/04
摘要： A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.
摘要翻译：一种用于在基底上施加薄层和涂层的气相沉积方法和装置。该方法和装置可用于制造电子设备，微机电系统（MEMS），生物MEMS装置，微型和纳米压印光刻以及微流体装置。用于实施该方法的装置提供了在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。该装置提供在单一步骤期间或当涂层形成过程中存在许多不同的单独步骤时精确添加量的不同组合的反应物。将蒸气形式的每种反应物的精确加入在指定温度下计量到预定设定体积至指定压力，以提供高精度的反应物。

22. 发明申请

US20070281492A1 Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures 有权
标题翻译：用于制造半导体，MEMS和微结构的保护薄膜
公开(公告)号：US20070281492A1
公开(公告)日：2007-12-06
申请号：US11447186
申请日：2006-06-05
申请人： Jeffrey D. Chinn , Boris Kobrin , Romuald Nowak
发明人： Jeffrey D. Chinn , Boris Kobrin , Romuald Nowak
IPC分类号： H01L21/47
CPC分类号： H01L21/02126 , B81C1/00896 , B81C2201/053 , C23C16/44 , C23C16/455 , H01L21/02263 , H01L21/3121
摘要： A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.
摘要翻译：一种在制造半导体，MEMS或生物技术设备期间保护衬底的方法。该方法包括施加通常具有约3至约1000的厚度的保护性薄膜，其中用于沉积保护性薄膜的前体材料是有机基前体，其包括至少一个含氟官能团碳骨架的一端和在碳骨架的相对端处的至少一个功能键合基团，其中碳骨架的长度为4个碳到约12个碳原子。在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

23. 发明授权

US06936183B2 Etch process for etching microstructures 失效
标题翻译：用于蚀刻微结构的蚀刻工艺
公开(公告)号：US06936183B2
公开(公告)日：2005-08-30
申请号：US10265598
申请日：2002-10-08
申请人： Jeffrey D. Chinn , Sofiane Soukane
发明人： Jeffrey D. Chinn , Sofiane Soukane
IPC分类号： B81B3/00 , G02B6/12 , G02B6/122 , G02B6/36 , C03C15/00
CPC分类号： B81C1/00928 , B81C2201/112 , G02B6/122 , G02B6/3692 , G02B2006/12176
摘要： A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
摘要翻译：公开了一种从基板释放微机电装置的两步法。第一步包括用夹杂在两个含硅层之间的氧化硅层与氟化氢 - 水气体混合物进行各向同性蚀刻，所述上层硅层将从底层硅层或衬底分离足以形成开口但不以释放上覆层，第二步骤包括加入干燥剂以代替残留在开口中的水分，并溶解开口中可能导致静电的残留物。

24. 发明授权

US06902947B2 Integrated method for release and passivation of MEMS structures 失效
标题翻译： MEMS结构的释放和钝化的集成方法
公开(公告)号：US06902947B2
公开(公告)日：2005-06-07
申请号：US10435757
申请日：2003-05-09
申请人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung , Claes H. Bjorkman
发明人： Jeffrey D. Chinn , Rolf A. Guenther , Michael B. Rattner , James A. Cooper , Toi Yue Becky Leung , Claes H. Bjorkman
IPC分类号： B81B3/00 , B81C1/00 , H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.
摘要翻译：本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

25. 发明授权

US06849554B2 Method of etching a deep trench having a tapered profile in silicon 失效
标题翻译：在硅中蚀刻具有锥形轮廓的深沟槽的方法
公开(公告)号：US06849554B2
公开(公告)日：2005-02-01
申请号：US10137176
申请日：2002-05-01
申请人： Michael Rattner , Jeffrey D. Chinn
发明人： Michael Rattner , Jeffrey D. Chinn
IPC分类号： H01L21/3065 , H01L21/762 , H01L21/302
CPC分类号： H01L21/3065 , H01L21/76232
摘要： Disclosed herein is a method of etching deep trenches in a substrate which utilizes the overlying mask structure to achieve a trench having a positive tapered sidewall angle of less than about 88°. The method employs the successive etching of a lateral undercut in the substrate beneath a masking material, while at the same time etching vertically downward beneath the mask. The coordinated widening of the lateral undercut at the top of the trench, while vertically extending the depth of the trench, is designed to provide the desired trench sidewall taper angle.
摘要翻译：本文公开了一种蚀刻衬底中的深沟槽的方法，其利用上覆掩模结构来实现具有小于约88°的正锥形侧壁角的沟槽。该方法采用在掩模材料下面的衬底中的横向底切的连续蚀刻，同时在掩模下垂直向下蚀刻。在沟槽顶部的横向底切的协调加宽，同时垂直延伸沟槽的深度，被设计成提供所需的沟槽侧壁锥角。

26. 发明申请

US20040261703A1 Apparatus and method for controlled application of reactive vapors to produce thin films and coatings 审中-公开
标题翻译：用于控制应用反应蒸气以产生薄膜和涂层的装置和方法
公开(公告)号：US20040261703A1
公开(公告)日：2004-12-30
申请号：US10759857
申请日：2004-01-17
申请人： Jeffrey D. Chinn , Romuald Nowak
发明人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
IPC分类号： C23C016/00
CPC分类号： B82Y30/00 , B05D1/185 , B05D1/60 , B05D3/142 , B82Y40/00 , C09D4/00 , C23C16/4485 , C08G77/04
摘要： A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

27. 发明授权

US06666979B2 Dry etch release of MEMS structures 失效
标题翻译： MEMS结构的干蚀刻释放
公开(公告)号：US06666979B2
公开(公告)日：2003-12-23
申请号：US10046593
申请日：2001-10-29
申请人： Jeffrey D. Chinn , Vidyut Gopal , Sofiane Soukane , Toi Yue Becky Leung
发明人： Jeffrey D. Chinn , Vidyut Gopal , Sofiane Soukane , Toi Yue Becky Leung
IPC分类号： H01L2100
CPC分类号： B81B3/0005 , B81B3/0008 , B81B2201/033 , B81C2201/016 , B81C2201/112
摘要： The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.
摘要翻译：本发明涉及制造响应于刺激而自由移动的MEM内的表面的方法。自由移动表面是在一系列步骤中制造的，其包括释放方法，其中通过牺牲层材料的无质子蚀刻来实现释放。蚀刻步骤之后是清洁步骤，其中来自蚀刻步骤的副产物与可能导致静电的其它污染物一起被去除。存在一系列蚀刻然后清洁步骤，使得执行这些步骤的许多“循环”。在每个蚀刻步骤和每个清洁步骤之间，处理室压力通常突然降低，以产生湍流，并且有助于通过在降低腔室压力期间的泵送作用从结构表面和处理室排出的微粒去除。最终的蚀刻/清洁循环之后可以是表面钝化步骤，其中清洁的表面被钝化和/或涂覆。

28. 发明授权

US06635573B2 Method of detecting an endpoint during etching of a material within a recess 失效
标题翻译：在蚀刻凹陷内的材料时检测端点的方法
公开(公告)号：US06635573B2
公开(公告)日：2003-10-21
申请号：US10040109
申请日：2001-10-29
申请人： Wilfred Pau , Meihua Shen , Jeffrey D. Chinn
发明人： Wilfred Pau , Meihua Shen , Jeffrey D. Chinn
IPC分类号： H01L21302
CPC分类号： H01L22/26 , H01L21/32137
摘要： We have discovered a method of detecting the approach of an endpoint during the etching of a material within a recess such as a trench or a contact via. The method provides a clear and distinct inflection endpoint signal, even for areas of a substrate containing isolated features. The method includes etching the material in the recess and using thin film interferometric endpoint detection to detect an endpoint of the etch process, where the interferometric incident light beam wavelength is tailored to the material being etched; the spot size of the substrate illuminated by the light beam is sufficient to provide adequate signal intensity from the material being etched; and the refractive index of the material being etched is sufficiently different from the refractive index of other materials contributing to reflected light from the substrate, that the combination of the light beam wavelength, the spot size, and the difference in refractive index provides a clear and distinct endpoint signal.
摘要翻译：我们已经发现了在凹槽（例如沟槽或接触通孔）内蚀刻材料期间检测端点的接近方法。该方法提供清晰和明确的拐点端点信号，即使对于包含隔离特征的基板的区域也是如此。该方法包括蚀刻凹陷中的材料并使用薄膜干涉测量端点检测来检测蚀刻过程的终点，其中干涉入射光束波长适合被蚀刻的材料; 由光束照射的基板的光斑尺寸足以从被蚀刻的材料提供足够的信号强度; 并且被蚀刻的材料的折射率与其他有助于来自衬底的反射光的材料的折射率充分不同，光束波长，光点尺寸和折射率差的组合提供了清晰和不同的端点信号。

29. 发明授权

US06620575B2 Construction of built-up structures on the surface of patterned masking used for polysilicon etch 失效
标题翻译：在用于多晶硅蚀刻的图案化掩模的表面上构建堆积结构
公开(公告)号：US06620575B2
公开(公告)日：2003-09-16
申请号：US09875069
申请日：2001-06-05
申请人： Nam-Hun Kim , Jeffrey D. Chinn
发明人： Nam-Hun Kim , Jeffrey D. Chinn
IPC分类号： G06F736
CPC分类号： H01L21/32139 , H01L21/32137
摘要： The present invention pertains to a method for depositing built-up structures on the surface of patterned masking material used for semiconductor device fabrication. Such built-up structures are useful in achieving critical dimensions in the fabricated device. The composition of the built-up structure to be fabricated is dependant upon the plasma etchants used during etching of underlying substrates and on the composition of the substrate material directly underlying the masking material. One preferred method of the present invention for depositing built-up structures upon a patterned mask surface comprises the following steps: (a) providing a patterned mask surface, wherein said patterned mask rests on an underlying substrate; and (b) depositing a polymeric built-up structure over at least a portion of said patterned mask surface using a plasma formed from a source gas comprising Cl2, a compound which comprises fluorine, and an inert gas which provides physical bombardment of surfaces contacted by said plasma.
摘要翻译：本发明涉及用于在用于半导体器件制造的图案化掩模材料的表面上沉积积聚结构的方法。这种组合结构可用于在制造的装置中实现临界尺寸。要制造的积层结构的组成取决于在蚀刻下面的衬底期间使用的等离子体蚀刻剂以及直接在掩模材料下面的衬底材料的组成。本发明的一种优选的方法用于将图案化掩模表面上的堆积结构沉积在一起，包括以下步骤：（a）提供图案化掩模表面，其中所述图案化掩模位于下面的基底上; 和（b）使用由包含Cl 2的源气体形成的等离子体形成的等离子体积聚结构，所述源气体包括氟化合物，以及惰性气体，所述惰性气体提供物理轰击与说等离子体

30. 发明授权

US06576489B2 Methods of forming microstructure devices 失效
公开(公告)号：US06576489B2
公开(公告)日：2003-06-10
申请号：US09850923
申请日：2001-05-07
申请人： Toi Yue Becky Leung , Jeffrey D. Chinn
发明人： Toi Yue Becky Leung , Jeffrey D. Chinn
IPC分类号： H01L2100
CPC分类号： B81C1/0096 , B81B3/0005 , B81C2201/0176 , B81C2201/112 , B82Y30/00
摘要： The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.

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