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    • 24. 发明申请
    • IN-VACUUM ROTATIONAL DEVICE
    • 真空旋转装置
    • US20150008120A1
    • 2015-01-08
    • US14372003
    • 2013-01-14
    • Gencoa Ltd.
    • Jonathan Price
    • H01J37/34
    • H01J37/3405C23C14/3407H01J37/342H01J37/3435
    • This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerisation, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control. This invention also relates to the arrangement of these devices as a singularity or a plurality of units. This invention also relates to the target construction which can be used in such device. This invention also relates to the use of these devices in different power modes such as DC, DC pulsed, RF, AC, AC dual, HIPIMS, or any other powering mode in order to generate a plasma, such as sputtering plasma, plasma arc, electron beam evaporation, plasma polymerization plasma, plasma treatment or any other plasma generated for the purpose of a process, for example, and not exclusively, as deposition process or surface treatment process, etc.
    • 本发明涉及圆柱形磁控溅射源上的真空内旋转装置,其中这种装置的目标结构的目标元件能够转动而不需要真空至大气或真空到冷却剂动态密封。 本发明涉及该装置在真空等离子体技术中的应用,其中等离子体放电或任何其它适当的能量源(例如弧,激光)可以施加到靶或其附近将产生合适的涂层沉积或等离子体处理 对不同性质的成分。 本发明还涉及但不限于在溅射,磁控溅射,电弧,等离子体聚合,激光烧蚀和等离子体蚀刻中使用该装置。 本发明还涉及在具有或不具有反馈等离子体过程控制的非反应性和反应性过程中这种装置的使用和控制。 本发明还涉及这些装置作为奇点或多个单元的布置。 本发明还涉及可用于这种装置中的目标结构。 本发明还涉及这些器件在诸如DC,DC脉冲,RF,AC,AC双重,HIPIMS或任何其它供电模式的不同功率模式中的用途,以便产生等离子体,例如溅射等离子体,等离子弧, 电子束蒸发,等离子体聚合等离子体,等离子体处理或为了工艺目的而产生的任何其他等离子体,例如但不限于沉积工艺或表面处理工艺等。