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    • 1. 发明申请
    • COATER
    • US20190080891A1
    • 2019-03-14
    • US16079307
    • 2017-02-24
    • GENCOA LTD
    • Victor Bellido-Gonzalez
    • H01J37/34H01J37/32
    • This invention relates to generation and control of electron emission and transport in a plasma device for enhancing ionization in sputtering, including magnetron sputtering, ion treatment, thermal evaporation, electron beam evaporation. The device in combines a sputtering enhanced electron emission on a cathodic element in which a strong electrical field around the electron emission element is created. In addition, this electric field area is in a magnetically confined space of nearly null strength and/or magnetic mirror features. The electron emission area would also comprise of guided magnetic field extraction magnetic field paths which could be either permanent or created at pulse modes. Also, the invention relates to reactive process and coating deposition ion bombardment management. This invention also relates to the use in feedback control systems; manufacturing process and methods which use these devices and materials and components processed by the present invention are also part of the invention.
    • 5. 发明申请
    • ION SOURCE SPUTTERING
    • 离子源爆炸
    • WO2017046787A1
    • 2017-03-23
    • PCT/IB2016/056069
    • 2016-10-11
    • GENCOA LTD
    • BELLIDO-GONZALEZ, Victor
    • H01J37/34H01J37/32
    • H01J37/32027H01J37/32045H01J37/32422H01J37/32568H01J37/342H01J37/3438H01J37/3444
    • An ion source comprising: an electrode (1); a counter electrode (2); means (3) for generating an electrical potential between the electrode (1) and counter-electrode (2); one or more magnets (4) arranged, in use, to confine a plasma generated around the electrode (1) upon application of the said electrical potential; and an aperture in the counter-electrode through which ions from the said plasma can escape; characterised in that: the means (3) for generating an electrical potential between the electrode (1) and counter electrode (2) comprises a DC signal generator that is: electrically connected to the electrode (1) and the counter-electrode (2); adapted, in use, to apply a baseline DC potential to the electrode (1) and the counter-electrode (2) with the DC potential at the electrode (1) being positive relative to the DC potential at the counter electrode (2); and adapted, in use, to apply a sequence of DC pulses (33) superimposed onto the baseline DC potential.
    • 一种离子源,包括:电极(1); 对电极(2); 用于在电极(1)和对电极(2)之间产生电位的装置(3); 一个或多个磁体(4)在使用中布置成在施加所述电位时限制在电极(1)周围产生的等离子体; 以及反电极中的孔,来自所述等离子体的离子可通过该孔离开; 其特征在于:用于在所述电极(1)和所述对置电极(2)之间产生电位的装置(3)包括:电连接到所述电极(1)和所述对置电极(2)的DC信号发生器, ; 在电极(1)处的直流电位相对于相对电极(2)处的直流电位为正的情况下,在使用中适应基线DC电位到电极(1)和对电极(2) 并且在使用中适应于施加叠加在基线DC电位上的一系列DC脉冲(33)。
    • 6. 发明申请
    • IN-VACUUM ROTATIONAL DEVICE
    • 真空中的旋转装置
    • WO2013104925A3
    • 2013-10-24
    • PCT/GB2013050064
    • 2013-01-14
    • GENCOA LTD
    • PRICE JONATHAN
    • C23C14/34H01J37/32H01J37/34
    • H01J37/3405C23C14/3407H01J37/342H01J37/3435
    • This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerisation, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control. This invention also relates to the arrangement of these devices as a singularity or a plurality of units. This invention also relates to the target construction which can be used in such device. This invention also relates to the use of these devices in different power modes such as DC, DC pulsed, RF, AC, AC dual, HIPIMS, or any other powering mode in order to generate a plasma, such as sputtering plasma, plasma arc, electron beam evaporation, plasma polymerization plasma, plasma treatment or any other plasma generated for the purpose of a process, for example, and not exclusively, as deposition process or surface treatment process, etc.
    • 本发明涉及圆柱形磁控溅射源中的真空内旋转装置,其中该装置的目标结构的目标或目标元件能够在不需要真空到大气或真空到冷却剂动态密封的情况下旋转。 本发明涉及该装置在真空等离子体技术中的应用,其中等离子体放电或任何其他适当的能量源,例如电弧,激光,其可施加到目标或其附近将产生合适的涂层沉积或等离子体处理 对不同性质的组件。 本发明还涉及但不是专门涉及该装置在溅射,磁控溅射,电弧,等离子体聚合,激光烧蚀和等离子体蚀刻中的用途。 本发明还涉及在非反应性和反应性过程期间使用这种装置和控制,有或没有反馈等离子体过程控制。 本发明还涉及这些设备作为单个或多个单元的布置。 本发明还涉及可用于这种装置的目标结构。 本发明还涉及这些器件在诸如DC,DC脉冲,RF,AC,AC对偶,HIPIMS或任何其他供电模式的不同功率模式下的使用,以便产生等离子体,诸如溅射等离子体,等离子弧, 电子束蒸发,等离子体聚合等离子体,等离子体处理或为工艺目的而产生的任何其他等离子体,例如但不限于沉积工艺或表面处理工艺等
    • 7. 发明授权
    • In-vacuum rotational device
    • US09721769B2
    • 2017-08-01
    • US14372003
    • 2013-01-14
    • Gencoa Ltd.
    • Jonathan Price
    • C23C14/34H01J37/34
    • H01J37/3405C23C14/3407H01J37/342H01J37/3435
    • This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerization, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control. This invention also relates to the arrangement of these devices as a singularity or a plurality of units. This invention also relates to the target construction which can be used in such device. This invention also relates to the use of these devices in different power modes such as DC, DC pulsed, RF, AC, AC dual, HIPIMS, or any other powering mode in order to generate a plasma, such as sputtering plasma, plasma arc, electron beam evaporation, plasma polymerization plasma, plasma treatment or any other plasma generated for the purpose of a process, for example, and not exclusively, as deposition process or surface treatment process, etc.
    • 8. 发明申请
    • Plasma Source
    • 等离子源
    • US20150243484A1
    • 2015-08-27
    • US14427579
    • 2013-09-11
    • GENCOA LTD
    • Victor Bellido-Gonzalez
    • H01J37/32C23C16/50C23C14/22H01J37/34
    • H01J37/3266C23C14/22C23C14/34C23C16/50H01J37/32055H01J37/32651H01J37/3402H01J37/3405H01J37/3408H01J2237/332
    • This invention relates to magnetically enhanced cathodic plasma deposition and cathodic plasma discharges where the charged particles can be guided in a rarefied vacuum system. Specifically, a cluster or combination of cathodic plasma sources is described where a least two plasma source units are arranged in a rarefied gas vacuum system in such way that the resulting magnetic field interaction offers a guided channelling escape path of electrons in essentially perpendicular direction to the main bulk of neutral particles and droplets generated in the cathodic plasma source. In addition the cathodic plasma source arrangement of the present invention would generate a zone of very low magnetic field where the electrons are trapped via electric and magnetic fields. Ions generated by the plasma cluster would follow electrons via escape paths determined by electric and magnetic fields. The direction for the ions is fundamentally different from those of the neutral particles offering in this manner a charged particles filtering method. The invention could take form in different embodiments and different arrangements of these plasma clusters, interacting by magnetic interactions in such a way that the plasma would cross areas for the desired plasma treatment and/or coating of suitable substrates.
    • 本发明涉及磁性增强的阴极等离子体沉积和阴极等离子体放电,其中带电粒子可以在稀薄的真空系统中引导。 具体地,描述了阴极等离子体源的簇或组合,其中至少两个等离子体源单元被布置在稀薄气体真空系统中,使得所得到的磁场相互作用提供电子的引导通道逃逸路径在基本垂直于 在阴极等离子体源中产生的中性粒子和液滴的主要体积。 此外,本发明的阴极等离子体源装置将产生非常低磁场的区域,其中电子经由电场和磁场被捕获。 由等离子体簇产生的离子将通过由电场和磁场确定的逃生路径跟随电子。 离子的方向与以这种方式提供的带电粒子过滤方法的中性粒子的方向基本上不同。 本发明可以采取不同实施例的形式和这些等离子体簇的不同布置,通过磁相互作用相互作用,使得等离子体将跨越所需等离子体处理和/或涂覆合适基底的区域。