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21. 发明授权

US08797123B2 Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient 有权
标题翻译：具有电极边缘对准的双膜体声波谐振器提供改善的品质因数或机电耦合系数
公开(公告)号：US08797123B2
公开(公告)日：2014-08-05
申请号：US13232213
申请日：2011-09-14
申请人： Dariusz Burak , Chris Feng , Stefan Bader
发明人： Dariusz Burak , Chris Feng , Stefan Bader
IPC分类号： H03H9/02 , H03H9/58 , H03H9/13 , H03H9/15
CPC分类号： H03H9/132 , H03H9/585 , H03H9/587
摘要： An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.
摘要翻译：声谐振器包括具有横向边界的沟槽的衬底，形成在沟槽上的衬底上的第一电极，并且具有横向边缘，该侧边缘从沟槽的横向边界横向偏移第一距离;第一压电层第一电极，形成在第一压电层上并具有在沟槽的横向边界内侧向对齐的边缘的第二电极，位于第二电极上的第二压电层，以及位于第二压电层上的第三电极，其从第二电极的边缘横向偏移。

22. 发明申请

US20130106534A1 PLANARIZED ELECTRODE FOR IMPROVED PERFORMANCE IN BULK ACOUSTIC RESONATORS 有权
标题翻译：用于改进大容量谐波谐振器性能的平面电极
公开(公告)号：US20130106534A1
公开(公告)日：2013-05-02
申请号：US13286038
申请日：2011-10-31
申请人： Dariusz BURAK , Phil NIKKEL , John CHOY , Alexandre SHIRAKAWA , Stefan BADER
发明人： Dariusz BURAK , Phil NIKKEL , John CHOY , Alexandre SHIRAKAWA , Stefan BADER
IPC分类号： H03H9/54
CPC分类号： H03H9/173
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板中的空腔; 设置在所述空腔上的第一电极; 与第一电极相邻设置的平坦化层; 设置在所述第一电极上的压电层; 以及设置在所述压电层上的第二电极。

23. 发明申请

US20130106248A1 BULK ACOUSTIC RESONATOR COMPRISING PIEZOELECTRIC LAYER AND INVERSE PIEZOELECTRIC LAYER 有权
标题翻译：包含压电层和反向压电层的大容量谐振谐振器
公开(公告)号：US20130106248A1
公开(公告)日：2013-05-02
申请号：US13286051
申请日：2011-10-31
申请人： Dariusz BURAK , Kevin J. GRANNEN , John D. LARSON, III , Alexandre SHIRAKAWA
发明人： Dariusz BURAK , Kevin J. GRANNEN , John D. LARSON, III , Alexandre SHIRAKAWA
IPC分类号： H01L41/083 , H01L41/187
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。

24. 发明申请

US20120280767A1 DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR 有权
标题翻译：双层膜膨胀谐振器，带电极层和PIEZO电层厚度提供改进的质量因子
公开(公告)号：US20120280767A1
公开(公告)日：2012-11-08
申请号：US13101376
申请日：2011-05-05
申请人： Dariusz BURAK , Chris FENG , Alexandre SHIRAKAWA , Stefan BADER
发明人： Dariusz BURAK , Chris FENG , Alexandre SHIRAKAWA , Stefan BADER
IPC分类号： H03H9/56
CPC分类号： H03H9/56 , H03H9/132 , H03H9/205 , H03H9/566 , H03H9/582 , H03H9/585 , H03H9/587 , H03H2003/028
摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.
摘要翻译：一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

25. 发明申请

US20120218060A1 BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER 有权
标题翻译：包含在压电层中形成的桥的大容量声波谐波器
公开(公告)号：US20120218060A1
公开(公告)日：2012-08-30
申请号：US13208909
申请日：2011-08-12
申请人： Dariusz Burak , Phil Nikkel , Jyrki Kaitila , John D. Larson, III , Alexandre Shirakawa
发明人： Dariusz Burak , Phil Nikkel , Jyrki Kaitila , John D. Larson, III , Alexandre Shirakawa
IPC分类号： H03H9/56
CPC分类号： H03H9/132 , H03H3/04 , H03H9/02007 , H03H9/02118 , H03H9/173 , H03H9/175 , H03H9/584 , H03H9/585 , H03H9/587 , H03H9/589
摘要： A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
摘要翻译：体声波（BAW）结构包括设置在基板上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。桥接器形成在压电层内，桥被压电层的压电材料包围。

26. 发明申请

US20070200940A1 Vertical tri-color sensor 有权
标题翻译：垂直三色传感器
公开(公告)号：US20070200940A1
公开(公告)日：2007-08-30
申请号：US11362711
申请日：2006-02-28
申请人： Russell Gruhlke , Dariusz Burak , Thomas Dungan
发明人： Russell Gruhlke , Dariusz Burak , Thomas Dungan
IPC分类号： H04N9/083 , H04N3/14 , H04N5/335 , H04N9/04
CPC分类号： G02B5/201 , B82Y20/00 , G02B5/008 , G02B6/1226 , H01L27/1462 , H01L27/14647 , H01L31/111 , H04N2209/047
摘要： A vertical tri-color sensor having vertically stacked blue, green, and red pixels detects at least blue and green components of incident light by converting the blue and green components to surface plasmons.
摘要翻译：具有垂直堆叠的蓝色，绿色和红色像素的垂直三色传感器通过将蓝色和绿色部件转换成表面等离子体激元来至少检测入射光的至少蓝色和绿色分量。

27. 发明授权

US06801558B2 Material systems for long wavelength lasers grown on InP substrates 失效
标题翻译：用于在InP衬底上生长的长波长激光器的材料系统
公开(公告)号：US06801558B2
公开(公告)日：2004-10-05
申请号：US10173369
申请日：2002-06-14
申请人： Dariusz Burak
发明人： Dariusz Burak
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/34306
摘要： A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of InP and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 1.2-1.4 um. The quantum well is made of AlGaAsSb or GaAsSb, and the barrier layers are made of AlGaAsSb, AlInGaAs, or AlInAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (&Dgr;Ec and &Dgr;Ev) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the InP substrate.
摘要翻译：能够产生长波长光的垂直腔表面发射激光器（VCSEL）具有InP衬底和具有交替的量子阱和势垒层的有源区。目标波长范围优选在1.2-1.4μm之间。量子阱由AlGaAsSb或GaAsSb制成，并且阻挡层由AlGaAsSb，AlInGaAs或AlInAs制成。有源区夹在优选外延生长的分布布拉格反射器的两个反射镜叠层之间。有源区域在VCSEL预期起作用的宽范围的环境温度范围内具有大的传导和价带偏移（DeltaEc和DeltaEv），用于有效的载流子保持。有源区可以被设计成在InP衬底上具有很少或没有晶格应变。

28. 发明授权

US08796904B2 Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer 有权
标题翻译：包括压电层和反压电层的体声波谐振器
公开(公告)号：US08796904B2
公开(公告)日：2014-08-05
申请号：US13286051
申请日：2011-10-31
申请人： Dariusz Burak , Kevin J. Grannen , John D. Larson, III , Alexandre Shirakawa
发明人： Dariusz Burak , Kevin J. Grannen , John D. Larson, III , Alexandre Shirakawa
IPC分类号： H01L41/08 , H03H9/58
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。

29. 发明授权

US08330325B1 Bulk acoustic resonator comprising non-piezoelectric layer 有权
标题翻译：包含非压电层的体声波谐振器
公开(公告)号：US08330325B1
公开(公告)日：2012-12-11
申请号：US13161946
申请日：2011-06-16
申请人： Dariusz Burak , Jyrki Kaitila , Alexandre Shirakawa , Martin Handtmann , Phil Nikkel
发明人： Dariusz Burak , Jyrki Kaitila , Alexandre Shirakawa , Martin Handtmann , Phil Nikkel
IPC分类号： H03H9/15 , H03H9/125
CPC分类号： H03H9/173 , H03H9/585
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.
摘要翻译：在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

30. 发明申请

US20120248941A1 STACKED BULK ACCOUSTIC RESONATOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：堆叠式散热器共振器及其制造方法
公开(公告)号：US20120248941A1
公开(公告)日：2012-10-04
申请号：US13074094
申请日：2011-03-29
申请人： Alexandre Augusto Shirakawa , Paul Bradley , Dariusz Burak , Stefan Bader , Chris Feng
发明人： Alexandre Augusto Shirakawa , Paul Bradley , Dariusz Burak , Stefan Bader , Chris Feng
IPC分类号： H03H9/17 , H01L41/047
CPC分类号： H03H3/02 , H03H9/132 , H03H9/585 , H03H2003/0428
摘要： A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator includes further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.
摘要翻译：层叠的体声波谐振器包括堆叠在第一电极上的第一压电层，堆叠在第一压电层上的第二电极; 堆叠在第二电极上的第二压电层和堆叠在第二压电层上的第三电极。所述层叠的体声波谐振器还包括形成在所述第一，第二和第三电极中的至少一个的表面上的内部部分中的内部凸起区域，以及沿所述至少一个表面上的外周边形成的外部凸起区域第一，第二或第三电极之一。外部凸起区域围绕内部凸起区域并且在内部升高区域和外部凸起区域之间限定间隙。

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