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    • 26. 发明授权
    • Methods of forming trench isolation regions having stress-reducing nitride layers therein
    • 在其中形成具有应力减小氮化物层的沟槽隔离区的方法
    • US06251746B1
    • 2001-06-26
    • US09415475
    • 1999-10-08
    • Soo-Jin HongYung-Seob YuBon-Young KooByung-Ki KimSeung-Mok Shin
    • Soo-Jin HongYung-Seob YuBon-Young KooByung-Ki KimSeung-Mok Shin
    • H01L2176
    • H01L21/76224
    • Methods of forming trench isolation regions include the steps of forming a trench masking layer comprising a first material (e.g., polysilicon) on a semiconductor substrate and then etching a trench in the semiconductor substrate, using the trench masking layer as etching mask. A trench nitride layer comprising a second material different from the first material is then formed on a sidewall of the trench and on a sidewall of the trench masking layer. The trench is then filled with a trench insulating material (e.g., USG). The trench masking layer is then removed by selectively etching the trench masking layer with an etchant that selectively etches the first material at a higher rate than the second material. This step of removing the trench masking layer results in exposure of a protruding portion of the trench nitride layer but does not cause the trench nitride layer to become recessed. The trench insulating material and the trench nitride layer are then etched back to define the trench isolation region.
    • 形成沟槽隔离区的方法包括以下步骤:使用沟槽掩模层作为蚀刻掩模,在半导体衬底上形成包含第一材料(例如多晶硅)的沟槽屏蔽层,然后蚀刻半导体衬底中的沟槽。 然后在沟槽的侧壁和沟槽掩模层的侧壁上形成包括不同于第一材料的第二材料的沟槽氮化物层。 然后用沟槽绝缘材料(例如USG)填充沟槽。 然后通过用比第二材料更高的速率选择性地蚀刻第一材料的蚀刻剂选择性蚀刻沟槽掩模层来去除沟槽掩模层。 去除沟槽屏蔽层的这个步骤导致了沟槽氮化物层的突出部分的曝光,但是不会使沟槽氮化物层变凹陷。 然后将沟槽绝缘材料和沟槽氮化物层回蚀刻以限定沟槽隔离区域。
    • 28. 发明申请
    • APPARATUS FOR ELECTRONICALLY CONTROLLABLE TRANSMISSION
    • 电子控制传输装置
    • US20120318090A1
    • 2012-12-20
    • US13586595
    • 2012-08-15
    • Jeong-Ho BakByung-Ki Kim
    • Jeong-Ho BakByung-Ki Kim
    • B60K20/02
    • F16H59/0204F16H59/044F16H2059/0273Y10T74/2003Y10T74/20116
    • Provided is an apparatus for electronically controllable transmission, and more particularly, an apparatus for electronically controllable transmission, the apparatus capable of shifting gears by moving a shift lever and sensing the magnetic flux density of a magnet, which moves in accordance with the rotation of the shift lever, by using a three-dimensional (3D) hall sensor. The apparatus includes: a shift lever including one end which is connected to a magnet and shifting gears by moving the shift lever; a shift lever body which is connected to the shift lever and is allowing the shift lever to move around shift axis or select axis; and a sensor unit including a 3D sensor which is mounted fixedly in the place intersecting the shift axis and select axis within the shift lever body and can sense the movement of the magnet around an X-axis, a Y-axis and a Z-axis as the magnet moves, wherein the 3D sensor is mounted at a tilted angle for providing at least two of three output signals with linearity.
    • 本发明提供一种电子可控变速器的装置,更具体地说,涉及一种用于电子可控变速器的装置,该装置能够通过移动变速杆并检测磁体的磁通密度来移动齿轮,磁体的磁通量密度根据 换档杆,通过使用三维(3D)霍尔传感器。 该装置包括:变速杆,其包括通过移动变速杆而连接到磁体的一端和变速齿轮; 变速杆主体,其与所述变速杆连接并且允许所述变速杆绕变速轴或选择轴线移动; 以及传感器单元,其包括固定地安装在与换档轴相交的位置和变速杆主体内的选择轴的位置的3D传感器,并且可以感测磁体围绕X轴,Y轴和Z轴的移动 当磁体移动时,其中3D传感器以倾斜角安装,以提供具有线性度的三个输出信号中的至少两个。