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21. 发明申请

WO2006107523A1 WAFER CURVATURE ESTIMATION, MONITORING, AND COMPENSATION 审中-公开
标题翻译：波形曲线估计，监测和补偿
公开(公告)号：WO2006107523A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/009019
申请日：2006-03-13
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KAUSHAL, Sanjeev , SUGISHIMA, Kenji , PANDEY, Pradeep
发明人： KAUSHAL, Sanjeev , SUGISHIMA, Kenji , PANDEY, Pradeep
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L21/67248 , H01L21/67288 , H01L22/12
摘要： A method (2100) of determining wafer curvature in real-time is presented; The method (2100) includes establishing a first temperature profile for a hotplate (58, 620) surface, where the hotplate (58, 620) surface is divided into a plurality of temperature control zones. The method (2100) further includes positioning a wafer (14, 690) at a first height above the hotplate (58, 620) surface and determining a second temperature profile for the hotplate (58, 620) surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model (904) of a processing system (900) is presented and wafer curvature can be incorporated into the dynamic model (904).
摘要翻译：提出了一种实时确定晶片曲率的方法（2100）。方法（2100）包括建立用于加热板（58,620）表面的第一温度分布，其中加热板（58,620）表面被分成多个温度控制区。方法（2100）还包括将晶片（14,690）定位在加热板（58,620）表面上方的第一高度处，并确定用于加热板（58,620）表面的第二温度曲线。然后通过使用第二温度分布来确定晶片曲率。此外，呈现处理系统（900）的动态模型（904），并且可以将晶片曲率并入到动态模型（904）中。

22. 发明申请

WO2006088561A2 METHOD FOR TREATING A SUBSTRATE WITH A HIGH PRESSURE FLUID USING A PEROXIDE-BASED PROCESS CHEMISTRY 审中-公开
标题翻译：用过氧化氢法处理具有高压流体的基板的方法
公开(公告)号：WO2006088561A2
公开(公告)日：2006-08-24
申请号：PCT/US2005/047409
申请日：2005-12-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KEVWITCH, Robert , GOSHI, Gentaro , HILLMAN, Joseph, T. , LOWE, Marie , HANSEN, Brandon
发明人： KEVWITCH, Robert , GOSHI, Gentaro , HILLMAN, Joseph, T. , LOWE, Marie , HANSEN, Brandon
IPC分类号： G03F7/42 , B08B7/00
CPC分类号： C11D3/3947 , B08B7/0021 , C11D11/0047 , C23G5/00 , G03F7/427 , H01L21/02063 , H01L21/02101 , H01L21/31133 , H01L21/67057 , H05K3/26
摘要： A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry.
摘要翻译：描述了用高压流体（例如超临界状态的二氧化碳）处理衬底（105,205）的方法和系统（100,200）。将工艺化学物质引入用于处理基材表面的高压流体中。工艺化学包括基于过氧化物的化学。

23. 发明申请

WO2018208825A1 COMPOSITE AEROGEL COATING FOR TEXTILE APPLICATIONS 审中-公开
公开(公告)号：WO2018208825A1
公开(公告)日：2018-11-15
申请号：PCT/US2018/031657
申请日：2018-05-08
申请人： LUKLA LLC
发明人： NASH, Jeffrey , MARKESBERY, Michael Glenn , VENNA, Rithvik
IPC分类号： C09D5/00
摘要： A composite material for coating a textile substrate. The composite material includes a polymer matrix and a particulate addition, wherein the particulate addition is 1-100% silica aerogel particles and 0-99% microspheres, by volume of the particulate addition. A textile assembly is also provided in which a first textile has a composite coating thereon, wherein the composite coating is made from the composite material. A method of making a textile assembly is also provided. The composite material is formed and then coated onto a first textile. In an embodiment, the particulate addition is effective to decrease thermal conductivity of the textile assembly by at least 30% compared to the textile assembly coated only with the polymer matrix.

24. 发明申请

WO2018112323A1 METHOD OF SELECTIVE DEPOSITION FOR BEOL DIELECTRIC ETCH 审中-公开
公开(公告)号：WO2018112323A1
公开(公告)日：2018-06-21
申请号：PCT/US2017/066639
申请日：2017-12-15
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： FEURPRIER, Yannick , PARNELL, Doni
IPC分类号： H01L21/02 , H01L21/3105
CPC分类号： H01L21/76826 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02203 , H01L21/02252 , H01L21/0234 , H01L21/02359 , H01L21/02362 , H01L21/3105 , H01L21/76831 , H01L21/76877
摘要： Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material.

25. 发明申请

WO2018057493A1 METHOD OF PATTERNING INTERSECTING STRUCTURES 审中-公开
标题翻译：图案化交互结构的方法
公开(公告)号：WO2018057493A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/052190
申请日：2017-09-19
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： VORONIN, Sergey, A. , TALONE, Christopher , RANJAN, Alok
IPC分类号： H01L21/027 , H01L21/311 , H01L29/66
CPC分类号： H01L21/823431 , H01J37/32935 , H01J2237/334 , H01L21/02057 , H01L21/3065 , H01L21/67069 , H01L21/67253 , H01L22/12 , H01L22/26 , H01L29/66795
摘要： Provided is a method of patterning structures on a substrate using an integration scheme in a patterning system, the method comprising: disposing a substrate in a processing chamber, the substrate having a plurality of structures and a pattern, the substrate including an underlying layer and a target layer, at least one structure intersecting with another structure, each intersection having an intersection angle and a corner, the integration scheme requiring a vertical corner profile at each intersection; altematingly and sequentially etching and cleaning the substrate to transfer the pattern onto the target layer and to achieve a target vertical corner profile at each intersection; controlling selected two or more operating variables of the integration scheme in the alternating and sequential etching and cleaning operations in order to achieve target integration objectives.
摘要翻译：提供一种在图案化系统中使用集成方案在衬底上图案化结构的方法，所述方法包括：将衬底布置在处理室中，所述衬底具有多个结构和图案，所述基底包括下层和目标层，至少一个结构与另一个结构相交，每个交点具有交叉角和拐角，所述整合方案在每个交点处需要垂直拐角轮廓; 蚀刻和清洁衬底以将图案转移到目标层上并在每个交叉点处实现目标垂直角轮廓; 在交替和顺序的蚀刻和清洁操作中控制整合方案的选定的两个或更多个操作变量，以实现目标整合目标。

26. 发明申请

WO2017197288A1 CRITICAL DIMENSION CONTROL BY USE OF A PHOTO AGENT 审中-公开
标题翻译：使用光剂进行临界尺寸控制
公开(公告)号：WO2017197288A1
公开(公告)日：2017-11-16
申请号：PCT/US2017/032450
申请日：2017-05-12
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： DEVILLIERS, Anton, J. , CARCASI, Michael, A.
IPC分类号： G03F7/20 , G03F7/00 , G03F7/40
摘要： A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation- sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer over the patterned layer, the overcoat layer containing a photo agent selected from a photosensitizer generator compound, a photosensitizer compound, a photoacid generator compound, a photoactive agent, an acid- containing compound, or a combination of two or more thereof. The overcoat layer is then exposed to electromagnetic radiation, wherein the dose of electromagnetic radiation applied to different regions of the substrate is varied, and then the overcoat layer and patterned layer are heated. The method further includes developing the overcoat layer and the patterned layer to alter the first critical dimension of the patterned layer to a second critical dimension.
摘要翻译：一种用于临界尺寸控制的方法，其中接收衬底，该衬底具有下层和形成在下层上的图案化层，图案化层包括辐射敏感材料和具有不同高度的图案第一关键维度。该方法进一步包括在图案化层上涂覆外涂层，外涂层含有选自光敏剂发生剂化合物，光敏剂化合物，光致酸发生剂化合物，光敏剂，含酸化合物或下列化合物的组合其中两个或更多个。然后将外涂层暴露于电磁辐射，其中施加于基材的不同区域的电磁辐射的剂量是变化的，然后加热外涂层和图案层。该方法进一步包括显影外涂层和图案化层以将图案化层的第一临界尺寸改变为第二临界尺寸。

27. 发明申请

WO2014035871A1 EUV RESIST SENSITIVITY REDUCTION 审中-公开
标题翻译：抗紫外线敏感性降低
公开(公告)号：WO2014035871A1
公开(公告)日：2014-03-06
申请号：PCT/US2013/056592
申请日：2013-08-26
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： HULI, Lior , HETZER, Dave
IPC分类号： G03F7/20 , G03F7/40
CPC分类号： G03F7/40 , G03F7/2004 , G03F7/2024 , G03F7/405
摘要： A method for patterning a substrate (1 30, 310, 410, 606) is described. The method includes forming a layer of radiation-sensitive material (120, 320, 420, 616) on a substrate (110, 310, 410, 606), and preparing a pattern (122, 321, 422, 612) in the layer of radiation-sensitive material (120, 320, 420, 616) using a lithographic process, wherein the pattern (122, 321, 422, 612) is characterized by a critical dimension (CD) (124, 325, 618) and a roughness (125, 424, 649). Following the preparation of the pattern (122, 321, 422, 612) in the layer of radiation-sensitive material (120, 320, 420, 616), the method further includes performing a CD slimming process to reduce the CD (124, 325, 618) to a reduced CD (134, 326, 335, 648), and performing a vapor smoothing process to reduce the roughness (125, 424, 649) to a reduced roughness (135, 425, 669).
摘要翻译：描述了用于图案化衬底（130,301,410,606）的方法。该方法包括在衬底（110,310,410,606）上形成辐射敏感材料层（120,320,420,616），以及在衬底（110,310,410,606）中形成图案（122,321,422,612）使用光刻工艺的辐射敏感材料（120,320,420,616），其中所述图案（122,321,422,612）的特征在于临界尺寸（CD）（124,325,618）和粗糙度 125，424，649）。在辐射敏感材料层（120,320,420,616）中制备图案（122,321,422,612）之后，该方法还包括进行CD减肥过程以减少CD（124,325 ，618）到减少的CD（134,326,335,648），并且执行蒸气平滑处理以将粗糙度（125,424,649）减小到减小的粗糙度（135,425,669）。

28. 发明申请

WO2013019814A2 SYSTEM AND METHOD FOR TISSUE CONSTRUCTION USING AN ELECTRIC FIELD APPLICATOR 审中-公开
标题翻译：使用电场施加器的组织构造的系统和方法
公开(公告)号：WO2013019814A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/049056
申请日：2012-07-31
申请人： TOKYO ELECTRON LIMITED , BRCKA, Jozef
发明人： BRCKA, Jozef
IPC分类号： C12M3/00
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A method and apparatus are provided for constructing tissue from cells or other objects by application of temporally and spatially controlled electric fields. Electric field applicators expose a substrate (32) to the electric field controlled to affect the processing medium (28) to achieve a processing effect on the construction of tissue on the substrate (32). Electrical bias is selected to interact with dipole properties of the medium (28) to control the movement of suspended dielectrophoretic cells or other particles in the medium (28) or at the substrate (32). The motion of suspended particles may be affected to cause suspended particles of different properties to follow different paths in the processing medium (28), which may be used to cause the suspended particles to be sorted. The processing medium (28) and electrical bias may be selected to affect the structure, or orientation, of one or more layers on the substrate (32).
摘要翻译：提供了一种方法和设备，用于通过应用时间和空间控制的电场从细胞或其他物体构建组织。电场施加器将衬底（32）暴露于被控制以影响处理介质（28）的电场，以实现衬底（32）上的组织构造的处理效果。选择电偏压以与介质（28）的偶极性质相互作用，以控制介质（28）中或衬底（32）处的悬浮介电泳细胞或其他颗粒的移动。可以影响悬浮颗粒的运动，以使不同性质的悬浮颗粒遵循处理介质（28）中的不同路径，这可以用来使悬浮颗粒分选。可以选择处理介质（28）和电偏压以影响衬底（32）上的一个或多个层的结构或取向。

29. 发明申请

WO2013019810A9 METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 审中-公开
公开(公告)号：WO2013019810A9
公开(公告)日：2013-02-07
申请号：PCT/US2012/049040
申请日：2012-07-31
申请人： TOKYO ELECTRON LIMITED , BRCKA, Jozef , FAGUET, Jacques , LEE, Eric, M. , YUE, Hongyu
发明人： BRCKA, Jozef , FAGUET, Jacques , LEE, Eric, M. , YUE, Hongyu
IPC分类号： H01J37/32 , B03C5/00
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

30. 发明申请

WO2010101688A1 ULTRA-THIN FILM FORMATION USING GAS CLUSTER ION BEAM PROCESSING 审中-公开
标题翻译：使用气体离子束加工的超薄膜形成
公开(公告)号：WO2010101688A1
公开(公告)日：2010-09-10
申请号：PCT/US2010/023014
申请日：2010-02-03
申请人： TEL EPION INC. , HAUTALA, John, J. , BURKE, Edmund , RUSSELL, Noel , HERDT, Gregory
发明人： HAUTALA, John, J. , BURKE, Edmund , RUSSELL, Noel , HERDT, Gregory
IPC分类号： C23C14/22 , H01L21/768
CPC分类号： C23C14/221 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/31144 , H01L21/3148 , H01L21/31612 , H01L21/31662 , H01L21/318 , H01L21/3185 , H01L21/3212 , H01L21/76802 , H01L21/76807 , H01L21/76825 , H01L21/76829 , H01L21/76834 , H01L21/7684 , Y10S438/902
摘要： A method of preparing a thin film on a substrate (152, 252, 30') is described. The method comprises forming an ultra-thin hermetic film (40', 71, 622, 762, 812, 832) over a portion of a substrate (152, 252, 30') using a gas cluster ion beam (GCIB) (128), wherein the ultra-thin hermetic film (40', 71, 622, 762, 812, 832) has a thickness less than approximately 5 nm. The method further comprises providing a substrate (152, 252, 30') in a reduced-pressure environment, and generating a GCIB (128) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film (40', 71, 622, 762, 812, 832) less than about 5 nanometers (nm). The GCIB (128) is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate (152, 252, 30') according to the beam dose. By doing so, the thin film (40', 71, 622, 762, 812, 832) is formed on the at least a portion of the substrate (152, 252, 30') to achieve the thickness desired.
摘要翻译：描述了在衬底（152,252,30'）上制备薄膜的方法。该方法包括使用气体簇离子束（GCIB）（128）在衬底（152,252,30'）的一部分上形成超薄密封膜（40'，71,622,762,812,832），其中所述超薄密封膜（40'，71,622,762,812,832）具有小于约5nm的厚度。该方法还包括在减压环境中提供衬底（152,252,30'），以及在减压环境中从加压气体混合物产生GCIB（128）。选择光束加速电位和光束剂量以获得小于约5纳米（nm）的薄膜（40'，71,622,762,812,832）的厚度。 GCIB（128）根据光束加速电位被加速，并且加速的GCIB根据光束剂量照射到衬底（152,252,30'）的至少一部分上。通过这样做，薄膜（40'，71,622,762,812,832）形成在衬底（152,252,30'）的至少一部分上，以实现所需的厚度。

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