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1. 发明申请

WO2014158440A2 CHEMI-EPITAXY IN DIRECTED SELF-ASSEMBLY APPLICATIONS USING PHOTO-DECOMPOSABLE AGENTS 审中-公开
标题翻译：使用照片分解代理程序的方向自组装应用程序中的CHEMI-EPITAXY
公开(公告)号：WO2014158440A2
公开(公告)日：2014-10-02
申请号：PCT/US2014/016760
申请日：2014-02-18
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SOMERVELL, Mark, H. , CARCASI, Michael, A.
IPC分类号： G03F7/11
CPC分类号： G03F7/11 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0035 , G03F7/0045 , G03F7/039 , G03F7/168 , G03F7/322 , G03F7/325 , G03F7/40
摘要： A method (100) of forming a layered substrate comprising a self-assembled material is provided. The method (100) includes forming a first layer of material on a substrate (110), forming a layer of a radiation sensitive material on the first layer of material (120), imaging the layer of the radiation sensitive material (130) with patterned light, heating the layer of the radiation sensitive material (130) to a temperature at or above the cross-linking reaction temperature (140), developing the imaged layer (150), and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component.
摘要翻译：提供了形成包括自组装材料的层状基板的方法（100）。方法（100）包括在衬底（110）上形成第一材料层，在第一材料层（120）上形成辐射敏感材料层，使图案化的辐射敏感材料层（130）成像将所述辐射敏感材料（130）的层加热到等于或高于交联反应温度（140）的温度，显影所述成像层（150），并形成所述嵌段共聚物图案。辐射敏感材料包含至少一种选自（a）可光分解交联剂，（b）光碱发生剂或（c）可光分解基质的光敏组分; 和可交联聚合物，其中通过图案化光的成像提供了由具有由具有完整光敏组分的实质部分的区域包围的分解的光敏部件的实质部分的第一区域限定的图案。

2. 发明申请

WO2015130695A1 Chemical Amplification Methods and Techniques for Developable Bottom Anti-reflective Coatings and Dyed Implant Resists 审中-公开
标题翻译：可开发的底部防反射涂层和染色植入物抗蚀剂的化学扩增方法和技术
公开(公告)号：WO2015130695A1
公开(公告)日：2015-09-03
申请号：PCT/US2015/017353
申请日：2015-02-24
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： SCHEER, Steven , CARCASI, Michael, A. , RATHSACK, Benjamen, M. , SOMERVELL, Mark, H. , HOOGE, Joshua, S.
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01L21/0276 , G03F7/091 , G03F7/11 , G03F7/203 , H01L21/0271
摘要： The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.
摘要翻译：本文的公开内容描述了用于光敏化学放大抗蚀化学品（PS-CAR）在半导体衬底上图案感光膜（例如抗反射涂层上的光致抗蚀剂）的方法。在一个实施方案中，两步曝光工艺可在光致抗蚀剂层内产生更高的酸浓度区域。 PS-CAR化学品可以包括光酸产生剂（PAG）和增强PAG分解成酸的光敏剂元素。第一次曝光可以是产生初始量的酸和光敏剂的图案化的EUV或UV曝光。第二次暴露可能是非EUV泛滥暴露，其激发光敏剂，其增加了光敏剂位于膜堆中的酸产生速率。可以通过使用光致抗蚀剂层，下层和/或上覆层的某些特性（例如，厚度，折射率，掺杂）来优化曝光期间的能量分布。

3. 发明申请

WO2017197288A1 CRITICAL DIMENSION CONTROL BY USE OF A PHOTO AGENT 审中-公开
标题翻译：使用光剂进行临界尺寸控制
公开(公告)号：WO2017197288A1
公开(公告)日：2017-11-16
申请号：PCT/US2017/032450
申请日：2017-05-12
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： DEVILLIERS, Anton, J. , CARCASI, Michael, A.
IPC分类号： G03F7/20 , G03F7/00 , G03F7/40
摘要： A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation- sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer over the patterned layer, the overcoat layer containing a photo agent selected from a photosensitizer generator compound, a photosensitizer compound, a photoacid generator compound, a photoactive agent, an acid- containing compound, or a combination of two or more thereof. The overcoat layer is then exposed to electromagnetic radiation, wherein the dose of electromagnetic radiation applied to different regions of the substrate is varied, and then the overcoat layer and patterned layer are heated. The method further includes developing the overcoat layer and the patterned layer to alter the first critical dimension of the patterned layer to a second critical dimension.
摘要翻译：一种用于临界尺寸控制的方法，其中接收衬底，该衬底具有下层和形成在下层上的图案化层，图案化层包括辐射敏感材料和具有不同高度的图案第一关键维度。该方法进一步包括在图案化层上涂覆外涂层，外涂层含有选自光敏剂发生剂化合物，光敏剂化合物，光致酸发生剂化合物，光敏剂，含酸化合物或下列化合物的组合其中两个或更多个。然后将外涂层暴露于电磁辐射，其中施加于基材的不同区域的电磁辐射的剂量是变化的，然后加热外涂层和图案层。该方法进一步包括显影外涂层和图案化层以将图案化层的第一临界尺寸改变为第二临界尺寸。

4. 发明申请

WO2019060570A1 METHODS FOR SENSITIZING PHOTORESIST USING FLOOD EXPOSURES 审中-公开
公开(公告)号：WO2019060570A1
公开(公告)日：2019-03-28
申请号：PCT/US2018/051988
申请日：2018-09-20
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： CARCASI, Michael, A. , SOMERVELL, Mark, H. , NAGAHARA, Seiji
IPC分类号： G03F7/20 , G03F7/38
摘要： A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm 2 - 200 mJ/cm 2 , and a flood exposure at a wavelength of 200nm - 420nm and a dose of 0.5 J/cm 2 - 20 J/cm 2 . The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and

5. 发明申请

WO2017197279A1 CRITICAL DIMENSION CONTROL BY USE OF PHOTO-SENSITIZED CHEMICALS OR PHOTO-SENSITIZED CHEMICALLY AMPLIFIED RESIST 审中-公开
标题翻译：通过使用光敏化学品或光敏化学放大电阻来控制关键尺寸
公开(公告)号：WO2017197279A1
公开(公告)日：2017-11-16
申请号：PCT/US2017/032435
申请日：2017-05-12
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： CARCASI, Michael, A. , DEVILLIERS, Anton, J.
IPC分类号： G03F7/20
摘要： A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation- sensitive material is flood exposed to a second wavelength of light different from the first wavelength of light and developed a second time to form a pattern. Prior to flood exposure, the radiation-sensitive material has a first light wavelength activation threshold that controls generation of acid to a first acid concentration in the radiation-sensitive material layer and controls generation of photosensitizer molecules in the radiation- sensitive material layer, and a second light wavelength activation threshold different than the first light wavelength activation threshold that can excite the photosensitizer molecules resulting in the acid comprising a second acid concentration greater than the first acid concentration.
摘要翻译：一种用于临界尺寸控制的方法，其中接收衬底，衬底上具有底层和辐射敏感材料层。辐射敏感材料通过图案化掩模暴露于UV光谱中的第一波长的光，并且第一次发展。将辐射敏感材料暴露于不同于第一波长光的第二波长光并再次显影以形成图案。在洪水曝光之前，辐射敏感材料具有第一光波长激活阈值，其控制酸生成为辐射敏感材料层中的第一酸浓度并且控制辐射敏感材料层中光敏剂分子的生成，第二光波长激活阈值不同于第一光波长激活阈值，其可以激发光敏剂分子，导致包含比第一酸浓度大的第二酸浓度的酸。

6. 发明申请

WO2012134910A1 METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS 审中-公开
标题翻译：在光刻应用中消除辐射敏感材料线的方法
公开(公告)号：WO2012134910A1
公开(公告)日：2012-10-04
申请号：PCT/US2012/029905
申请日：2012-03-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , CARCASI, Michael, A. , RATHSACK, Benjamin, M. , SOMERVELL, Mark, H.
发明人： CARCASI, Michael, A. , RATHSACK, Benjamin, M. , SOMERVELL, Mark, H.
IPC分类号： G03F7/20 , G03F7/32 , G03F7/40
CPC分类号： G03F7/40 , G03F7/2024 , G03F7/32 , H01L21/0273 , H01L21/0274 , H01L21/67207
摘要： A method and system for patterning a substrate (101, 201, 301, 401 ) using a radiation-sensitive material (102, 202, 302, 402) is described. The method and system include forming a layer of radiation-sensitive material (102, 202, 302, 402) on a substrate (101, 201, 301, 401 ), exposing the layer of radiation-sensitive material (102, 202, 302, 402) to a pattern of radiation (107, 207, 307, 407), and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material (101, 201, 301, 401 ) is then developed to remove either a region (105, 205,312, 412) having high radiation exposure or a region (106, 206, 313, 413) having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.
摘要翻译：描述了使用辐射敏感材料（102,202,302,402）构图衬底（101,201,301,401）的方法和系统。所述方法和系统包括在衬底（101,201,301,401）上形成辐射敏感材料层（102,202,302,402），使所述辐射敏感材料层（102,202,302,402） 402）到辐射图案（107,207,307,407），然后在曝光之后进行曝光后烘烤。然后显影成像的辐射敏感材料层（101,201,301,401）以去除具有高辐射照射的区域（105,205,312,412）或具有低辐射敏感性材料的区域（106,206,313,413）辐射暴露形成辐射敏感材料线。然后去除辐射敏感材料线内的曝光梯度，随后减少辐射敏感材料线。

7. 发明申请

WO2007047284A1 REDUCTION OF ISO-DENSE FIELD THICKNESS BIAS THROUGH GAS JET FOR GAPFILL PROCESS 审中-公开
标题翻译： ISO-DENSE现场厚度的减少通过气体喷射进行平滑处理
公开(公告)号：WO2007047284A1
公开(公告)日：2007-04-26
申请号：PCT/US2006/039640
申请日：2006-10-10
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , CARCASI, Michael, A.
发明人： CARCASI, Michael, A.
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/00 , G03F7/16 , B05C11/08
CPC分类号： H01L21/02282 , H01L21/0276 , H01L21/31051 , H01L21/31058 , H01L21/312 , H01L21/316 , H01L21/6708 , H01L21/6715
摘要： A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle (25) to dispense the liquid dielectric and a separate nozzle (26) for jetting N2 or other gas onto a semiconductor wafer (10). The gas is jetted onto the wafer shortly after spin-on-dielectric liquid is dispensed. The jetting of the gas in the spin-coating process increases the volumetric flow of the liquid coating material in the radial direction, which in turn reduces the field thickness above isolated or no patterned areas to that at the more densely patterned areas, thereby improving the uniformity of the spun-on dielectric thickness on the wafer.
摘要翻译：影响质量传输以减少或消除旋转电介质（SOD）或旋涂玻璃（SOG）工艺中的等密度偏差的系统和方法使用喷嘴（25）分配液体电介质和单独的喷嘴（ 26），用于将N 2或其它气体喷射到半导体晶片（10）上。在旋涂电介质液体分配后不久，将气体喷射到晶片上。在旋涂过程中喷射气体会增加液体涂覆材料在径向方向上的体积流量，这进一步减小了隔离或无图案化区域上的场强比在更密集图案区域的场强，从而改善了晶片上纺丝介质厚度的均匀性。

8. 发明申请

WO2014152910A1 METHOD AND APPARATUS FOR SUBSTRATE RINSING AND DRYING 审中-公开
标题翻译：用于基材冲洗和干燥的方法和装置
公开(公告)号：WO2014152910A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/028199
申请日：2014-03-14
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDING, INC,
发明人： FONSECA, Carlos, A. , CARCASI, Michael, A.
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , B08B3/00 , B08B3/02 , B08B3/024 , B08B3/04 , B08B3/041 , B08B5/00 , B08B5/02 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/6704
摘要： A method and apparatus are disclosed for optimizing a rinsing and drying process in semiconductor manufacturing. The optimization seeks to maximize processing throughput while maintaining low defect counts and high device yields, and utilizes simulation and experimental data to set the optimal process parameters for the rinsing and drying process. Improved methods of rinse liquid and purge gas nozzle movement are also disclosed.
摘要翻译：公开了用于优化半导体制造中的冲洗和干燥过程的方法和装置。该优化旨在最大限度地提高处理吞吐量，同时保持低缺陷计数和高设备产量，并利用模拟和实验数据设置漂洗和干燥过程的最佳工艺参数。还公开了改进的冲洗液体和吹扫气喷嘴运动的方法。

9. 发明申请

WO2011123433A2 METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS 审中-公开
标题翻译：在光刻应用中消除辐射敏感材料线的方法
公开(公告)号：WO2011123433A2
公开(公告)日：2011-10-06
申请号：PCT/US2011/030299
申请日：2011-03-29
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , CARCASI, Michael, A. , RATHSACK, Benjamin, M. , SOMERVELL, Mark, H.
发明人： CARCASI, Michael, A. , RATHSACK, Benjamin, M. , SOMERVELL, Mark, H.
IPC分类号： G03F7/20 , G03B27/58
CPC分类号： G03F7/26 , G03F7/2024 , G03F7/40 , H01L21/67207
摘要： A method and system for patterning a substrate using a radiation-sensitive material is described. The method (500) and system include forming a layer of radiation-sensitive material on a substrate (510), exposing the layer of radiation- sensitive material to a pattern of radiation (520), and then performing a post-exposure bake following the exposing (530). The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines (540). An exposure gradient within the radiation-sensitive material lines is then removed (550), followed by slimming the radiation-sensitive material lines (560).
摘要翻译：描述了使用辐射敏感材料构图衬底的方法和系统。方法（500）和系统包括在衬底（510）上形成辐射敏感材料层，将辐射敏感材料层暴露于辐射图案（520），然后进行曝光后烘烤曝光（530）。然后对成像的辐射敏感材料层进行正色调显影以去除具有高辐射照射的区域以形成辐射敏感材料线（540）。然后去除辐射敏感材料线内的曝光梯度（550），随后使辐射敏感材料线（560）减薄。

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