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191. 发明申请

US20100233482A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device 审中-公开
标题翻译：有机氧化硅微粒及其制备方法，多孔膜形成组合物，多孔膜及其形成方法以及半导体器件
公开(公告)号：US20100233482A1
公开(公告)日：2010-09-16
申请号：US12789902
申请日：2010-05-28
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

192. 发明授权

US07786022B2 Method for forming insulating film with low dielectric constant 失效
标题翻译：低介电常数形成绝缘膜的方法
公开(公告)号：US07786022B2
公开(公告)日：2010-08-31
申请号：US12029569
申请日：2008-02-12
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , C08G77/08 , C08L83/04 , C09D183/04 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
摘要翻译：在本发明中，通过水解和缩合由下式表示的硅烷化合物制备的硅溶胶：Si（OR1）4或R2nSi（OR3 )4-n，其中R1，R2（s）和R3（s）可以相同或者在分子中含有多个它们并且在亲水性碱性催化剂存在下各自独立地表示直链或支链C 1-4烷基，并且将疏水性碱性催化剂用于常规多孔膜形成组合物时使用。

193. 发明申请

US20100209850A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20100209850A1
公开(公告)日：2010-08-19
申请号：US12767369
申请日：2010-04-26
申请人： Masayuki ENDOU , Masaru Sasago
发明人： Masayuki ENDOU , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0274 , H01L21/033 , H01L21/0337 , Y10S427/102 , Y10S430/143 , Y10S430/146
摘要： A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film.
摘要翻译：在基板上形成第一抗蚀剂膜，并且执行第一图案曝光，使得通过第一掩模用曝光光照射第一抗蚀剂膜。然后，第一抗蚀剂膜被显影，从而形成第一抗蚀剂图案从第一抗蚀剂膜。随后，将纳米碳材料附着到第一抗蚀剂图案的表面，然后在包括第一抗蚀剂图案的基板上形成第二抗蚀剂膜。此后，进行第二图案曝光，使得第二抗蚀剂膜通过第二掩模用曝光光照射。然后，使第二抗蚀剂膜显影，从而在第二抗蚀剂膜中形成第二抗蚀剂图案。

194. 发明授权

US07754330B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device 有权
标题翻译：有机氧化硅核壳颗粒及其制备方法，多孔成膜组合物，多孔膜及其形成方法以及半导体器件
公开(公告)号：US07754330B2
公开(公告)日：2010-07-13
申请号：US12472681
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B5/16
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

195. 发明授权

US07731862B2 Dry etching method, fine structure formation method, mold and mold fabrication method 失效
标题翻译：干蚀刻法，精细结构形成法，模具和模具制造方法
公开(公告)号：US07731862B2
公开(公告)日：2010-06-08
申请号：US11475190
申请日：2006-06-27
申请人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
发明人： Hideo Nakagawa , Masaru Sasago , Tomoyasu Murakami
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： C23F4/00 , G02B2006/12166 , G02B2006/12197
摘要： A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.
摘要翻译：通过使用等离子体蚀刻包括钨和碳的物质。等离子体由包括氟原子的气体，包括氮原子的气体和包括烃分子的气体的混合气体产生。

196. 发明授权

US07563709B2 Pattern formation method and method for forming semiconductor device 失效
标题翻译：用于形成半导体器件的图案形成方法和方法
公开(公告)号：US07563709B2
公开(公告)日：2009-07-21
申请号：US11907018
申请日：2007-10-09
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： H01L21/4763
CPC分类号： H01L21/76801 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/76802 , H01L21/76813 , H01L21/76817
摘要： A pattern formation method includes the steps of forming a flowable film made of a material with flowability; forming at least one of a concave portion and a convex portion provided on a pressing face of a pressing member onto the flowable film by pressing the pressing member against the flowable film; forming a solidified film by solidifying the flowable film, onto which the at least one of a concave portion and a convex portion has been transferred, through annealing at a first temperature with the pressing member pressed against the flowable film; and forming a pattern made of the solidified film burnt by annealing at a second temperature higher than the first temperature.
摘要翻译：图案形成方法包括形成由具有流动性的材料制成的可流动膜的步骤; 通过将所述按压构件压靠在所述可流动膜上，将设置在所述挤压构件的按压面上的凹部和凸部中的至少一个形成在所述可流动膜上; 通过使按压部件压靠在所述可流动膜上的第一温度退火，使其中已经转移了所述至少一个凹部和凸部的所述可流动膜固化而形成固化膜; 以及在高于第一温度的第二温度下通过退火而形成由固化膜制成的图案。

197. 发明申请

US20080290472A1 SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体层间绝缘膜形成组合物，其制备方法，膜形成方法和半导体器件
公开(公告)号：US20080290472A1
公开(公告)日：2008-11-27
申请号：US12029562
申请日：2008-02-12
申请人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Tsutomu Ogihara , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Tsutomu Ogihara , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/58 , C08K3/34 , C08K3/36 , B32B5/18 , H01L21/312
CPC分类号： H01L21/31695 , C08G77/16 , C08G77/70 , C08G77/80 , C08K3/36 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/7682 , H01L2221/1047 , Y10T428/249953 , C08L83/00
摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4 (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.
摘要翻译：本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

198. 发明申请

US20080248280A1 Process for Preparing a Dispersion Liquid of Zeolite Fine Particles 有权
标题翻译：沸石微粒分散液的制备方法
公开(公告)号：US20080248280A1
公开(公告)日：2008-10-09
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： B32B3/26 , C09K17/40 , H01L21/3105 , B05D3/02
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

199. 发明申请

US20080118737A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 审中-公开
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20080118737A1
公开(公告)日：2008-05-22
申请号：US11999076
申请日：2007-12-04
申请人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B5/18 , B05D5/00 , C08J9/22
CPC分类号： H01L23/5222 , C08K3/34 , C08L83/02 , C09D183/04 , H01L23/53228 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , Y10T428/249953 , Y10T428/31663 , H01L2924/00
摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.
摘要翻译：本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜一致性和机械强度优异的多孔膜，容易变薄; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得，（OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。

200. 发明授权

US07341775B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07341775B2
公开(公告)日：2008-03-11
申请号：US10706861
申请日：2003-11-12
申请人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/48
CPC分类号： H01L21/02126 , C08K5/19 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31649 , Y10T428/31663
摘要： Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising a surfactant and a solution comprising polymer obtainable by hydrolyzing and condensing, in the presence of the surfactant, one or more of alkoxysilane represented by Formula (1) and one or more of alkoxysilane represented by Formula (2): (R1)mSi(OR2)4-m (1) R3Si(R4)n(OR5)3-n (2) Also provided is a method for forming porous film comprising a step of applying said composition on a substrate to form film and a step of transforming the film into porous film.
摘要翻译：提供一种可形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜的成膜用组合物。多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。更具体地，提供了一种用于形成多孔膜的组合物，其包含表面活性剂和包含可通过在表面活性剂存在下水解和缩合获得的聚合物的溶液，所述聚合物可由一种或多种由式（1）表示的烷氧基硅烷和一种或多种烷氧基硅烷由式（2）表示：<？in-line-formula description =“In-line Formulas”end =“lead”？>（R＆lt; 1＆gt;）＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？> R <3> Si（R 4） 3-n（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>还提供了形成多孔的方法薄膜，其包括在基材上涂布所述组合物以形成薄膜的步骤和将薄膜转变成多孔薄膜的步骤。

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