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11. 发明申请

WO2010129360A2 SEMICONDUCTOR SURFACE MODIFICATION 审中-公开
公开(公告)号：WO2010129360A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/032829
申请日：2010-04-28
申请人： SiONYX INC. , SICKLER, Jason , DONALDSON, Keith
发明人： SICKLER, Jason , DONALDSON, Keith
IPC分类号： H01L21/265 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/228 , H01L21/268 , H01L33/005 , Y02E10/547 , Y02P70/521 , Y10S438/914
摘要： Methods, systems, and devices associated with surface modifying a semiconductor material are taught. One such method includes providing a semiconductor material having a target region and providing a dopant fluid layer that is adjacent to the target region of the semiconductor material, where the dopant fluid layer includes at least one dopant. The target region of the semiconductor material is lased so as to incorporate the dopant or to surface modify the semiconductor material. During the surface modification, the dopant in the dopant fluid layer is actively replenished.
摘要翻译：教导了与表面修饰半导体材料有关的方法，系统和装置。一种这样的方法包括提供具有目标区域并提供与半导体材料的目标区域相邻的掺杂剂流体层的半导体材料，其中掺杂剂流体层包括至少一种掺杂剂。半导体材料的目标区域被引导以掺入掺杂剂或表面改性半导体材料。在表面改性期间，掺杂剂流体层中的掺杂剂被积极地补充。

12. 发明申请

WO2009111748A3 HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME 审中-公开
公开(公告)号：WO2009111748A3
公开(公告)日：2009-09-11
申请号：PCT/US2009/036408
申请日：2009-03-06
申请人： SIONYX, INC. , KURFISS, Neal
发明人： KURFISS, Neal
IPC分类号： H01L27/14
摘要： The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side and an architecture that enables the laser step to be the final step or a late step in the fabrication process. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.

13. 发明申请

WO2009111748A2 HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME 审中-公开
标题翻译：高填充因子激光处理半导体器件散装材料单边接触方案
公开(公告)号：WO2009111748A2
公开(公告)日：2009-09-11
申请号：PCT/US2009036408
申请日：2009-03-06
申请人： SIONYX INC , KURFISS NEAL
发明人： KURFISS NEAL
IPC分类号： H01L27/14
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/1464
摘要： The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side and an architecture that enables the laser step to be the final step or a late step in the fabrication process. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.
摘要翻译：本公开提供了用于配置和构造单个光检测器或光检测器阵列的系统和方法，其具有单侧上的所有制造电路以及使得激光步骤成为制造过程中的最后一步或后一步的结构。二极管的阳极和阴极触点都放置在单侧，而激光处理的半导体层则放置在对侧，以提高成本效益，光子检测和填充因子。

14. 发明申请

WO2014127376A2 HIGH DYNAMIC RANGE CMOS IMAGE SENSOR HAVING ANTI-BLOOMING PROPERTIES AND ASSOCIATED METHODS 审中-公开
标题翻译：具有抗起泡特性的高动态范围CMOS图像传感器及相关方法
公开(公告)号：WO2014127376A2
公开(公告)日：2014-08-21
申请号：PCT/US2014/016979
申请日：2014-02-18
申请人： SIONYX, INC.
发明人： JUTAO, Jiang , BORG, Matt
CPC分类号： H04N5/374 , H01L27/14654 , H04N5/35581 , H04N5/3591
摘要： A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.
摘要翻译：向具有以行和列排列的多个像素的像素阵列的CMOS成像器提供防溢保护的方法，其中CMOS成像器可操作以使用卷帘快门捕获高动态范围图像，被提供。这样的方法可以包括：读出第一积分时间的读出行中的像素所累积的电荷，将复位施加到读出行达足够的复位时间以允许在至少一个后续行中进行读出和复位，并且开始所述读出行中的所述像素的第二积分时间，其中所述第二积分时间短于所述第一积分时间，并且其中所述至少一个后续行是足够数量的行以具有组合的重置以排除来自像素阵列在第二次积分时间。

15. 发明申请

WO2013120093A1 LOW DAMAGE LASER-TEXTURED DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：低损耗激光设备和相关方法
公开(公告)号：WO2013120093A1
公开(公告)日：2013-08-15
申请号：PCT/US2013/025616
申请日：2013-02-11
申请人： SIONYX, INC.
发明人： SICKLER, Jason , VINEIS, Christopher , CAREY, James, E.
IPC分类号： H01L21/268 , H01L31/042 , H01L31/10
CPC分类号： H01L31/02363 , B23K26/0084 , B23K26/0624 , H01L21/268 , Y02E10/50
摘要： Methods for laser processing semiconductor materials for use in optoelectronic and other devices, including materials, devices, and systems associated therewith are provided. In one aspect, a method of minimizing laser-induced material damage while laser-texturing a semiconductor material can include delivering short pulse duration laser radiation to a target region of a semiconductor material to form a textured region having a reorganized surface layer, wherein the laser radiation has a wavelength from about 200 nm to about 600 nm and a pulse duration of from about 10 femtoseconds to about 400 picoseconds, and wherein defect density of the semiconductor material from beneath the reorganized surface layer up to a depth of about 1 micron is less than or equal to about 10 12 /cm 3 .
摘要翻译：提供了用于激光处理用于光电子器件和其他器件的半导体材料的方法，包括与其相关的材料，器件和系统。在一个方面，一种在半导体材料的激光纹理化过程中最小化激光诱导的材料损伤的方法可以包括将短脉冲持续时间的激光辐射传送到半导体材料的目标区域，以形成具有重新组织的表面层的纹理区域，其中激光辐射具有约200nm至约600nm的波长和约10飞秒至约400皮秒的脉冲持续时间，并且其中重组表面层下方的半导体材料的缺陷密度低至约1微米的深度较小大于或等于约1012 / cm3。

16. 发明申请

WO2011140273A3 PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：光伏器件及相关方法
公开(公告)号：WO2011140273A3
公开(公告)日：2012-03-08
申请号：PCT/US2011035259
申请日：2011-05-04
申请人： SIONYX INC , SAYLOR STEPHEN D , SICKLER JASON , CAREY JAMES , VINEIS CHRISTOPHER , LI XIA
发明人： SAYLOR STEPHEN D , SICKLER JASON , CAREY JAMES , VINEIS CHRISTOPHER , LI XIA
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for making a semiconductor device includes providing a semiconductor material and doping at least a portion of the semiconductor material to form at least one doped region. A portion of the semiconductor material is removed with a pulsed laser from at least one first region to form at least one adjacent second region.
摘要翻译：制造半导体器件的方法包括提供半导体材料并掺杂半导体材料的至少一部分以形成至少一个掺杂区域。用来自至少一个第一区域的脉冲激光去除半导体材料的一部分，以形成至少一个相邻的第二区域。

17. 发明申请

WO2011119618A3 DEVICES HAVING ENHANCED ELECTROMAGNETIC RADIATION DETECTION AND ASSOCIATED METHODS 审中-公开
标题翻译：具有增强电磁辐射检测和相关方法的装置
公开(公告)号：WO2011119618A3
公开(公告)日：2012-01-19
申请号：PCT/US2011029447
申请日：2011-03-22
申请人： SIONYX INC , ALIE SUSAN , PRALLE MARTIN U , PALSULE CHINTAMANI , MCKEE JEFFREY , LI XIA
发明人： ALIE SUSAN , PRALLE MARTIN U , PALSULE CHINTAMANI , MCKEE JEFFREY , LI XIA
IPC分类号： H01L31/101 , H01L31/0236
CPC分类号： H01L31/02327 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L31/1892 , Y02E10/50
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
摘要翻译：提供了感光半导体器件和相关方法。一方面，半导体器件可以包括半导体衬底和耦合到半导体衬底的半导体层，其中半导体层具有与半导体衬底相对的器件表面。该器件还包括耦合在半导体衬底和半导体层之间的至少一个纹理区域。在另一方面，该器件还包括耦合在半导体衬底和半导体层之间的至少一个电介质层。

18. 发明申请

WO2011160130A2 HIGH SPEED PHOTOSENSITIVE DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：高速感光装置及相关方法
公开(公告)号：WO2011160130A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/041108
申请日：2011-06-20
申请人： SIONYX, INC , CAREY, James , MILLER, Drake
发明人： CAREY, James , MILLER, Drake
IPC分类号： H01L31/10 , H01L31/04
CPC分类号： H01L31/02024 , H01L27/1446 , H01L27/14629 , H01L27/14643 , H01L31/02363 , H01L31/028 , H01L31/103 , Y02E10/50
摘要： High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
摘要翻译：提供高速光电子器件及相关方法。在一个方面，例如，高速光电子器件可以包括具有入射光表面的硅材料，在硅材料中形成半导体结的第一掺杂区域和第二掺杂区域，以及耦合到硅材料的纹理区域并定位成与电磁辐射相互作用。对于具有至少一个波长为约800nm至约1200nm的电磁辐射，光电子器件的响应时间为约1皮秒至约5纳秒，响应度大于或等于约0.4A / W。

19. 发明申请

WO2011119618A2 DEVICES HAVING ENHANCED ELECTROMAGNETIC RADIATION DETECTION AND ASSOCIATED METHODS 审中-公开
标题翻译：具有增强电磁辐射检测和相关方法的装置
公开(公告)号：WO2011119618A2
公开(公告)日：2011-09-29
申请号：PCT/US2011/029447
申请日：2011-03-22
申请人： SIONYX, INC. , ALIE, Susan , PRALLE, Martin, U. , PALSULE, Chintamani , MCKEE, Jeffrey , LI, Xia
发明人： ALIE, Susan , PRALLE, Martin, U. , PALSULE, Chintamani , MCKEE, Jeffrey , LI, Xia
IPC分类号： H01L31/101 , H01L31/0236
CPC分类号： H01L31/02327 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L31/1892 , Y02E10/50
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
摘要翻译：提供了感光半导体器件和相关方法。一方面，半导体器件可以包括半导体衬底和耦合到半导体衬底的半导体层，其中半导体层具有与半导体衬底相对的器件表面。该器件还包括耦合在半导体衬底和半导体层之间的至少一个纹理区域。在另一方面，该器件还包括耦合在半导体衬底和半导体层之间的至少一个电介质层。

20. 发明申请

WO2011035188A2 PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：光敏成像装置和相关方法
公开(公告)号：WO2011035188A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049375
申请日：2010-09-17
申请人： SIONYX, INC. , HADDAD, Homayoon , JIANG, Jutao , MCKEE, Jeffrey , MILLER, Drake , FORBES, Leonard , PALSULE, Chintamani
发明人： HADDAD, Homayoon , JIANG, Jutao , MCKEE, Jeffrey , MILLER, Drake , FORBES, Leonard , PALSULE, Chintamani
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464
摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.
摘要翻译：提供了光敏装置和相关方法。在一个方面，例如，光敏成像器装置可以包括具有形成至少一个结的多个掺杂区的半导体衬底，耦合到半导体衬底并定位成与电磁辐射相互作用的纹理化区域，以及耦合到半导体衬底并且可操作以传输来自所述至少一个结的电信号。在一个方面，纹理化区域可操作以促进从红外电磁辐射的检测产生电信号。在另一方面，与电磁辐射相互作用进一步包括与缺乏纹理化区域的半导体衬底相比增加半导体衬底的有效吸收波长。

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