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1. 发明申请

WO2011119618A3 DEVICES HAVING ENHANCED ELECTROMAGNETIC RADIATION DETECTION AND ASSOCIATED METHODS 审中-公开
标题翻译：具有增强电磁辐射检测和相关方法的装置
公开(公告)号：WO2011119618A3
公开(公告)日：2012-01-19
申请号：PCT/US2011029447
申请日：2011-03-22
申请人： SIONYX INC , ALIE SUSAN , PRALLE MARTIN U , PALSULE CHINTAMANI , MCKEE JEFFREY , LI XIA
发明人： ALIE SUSAN , PRALLE MARTIN U , PALSULE CHINTAMANI , MCKEE JEFFREY , LI XIA
IPC分类号： H01L31/101 , H01L31/0236
CPC分类号： H01L31/02327 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L31/1892 , Y02E10/50
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
摘要翻译：提供了感光半导体器件和相关方法。一方面，半导体器件可以包括半导体衬底和耦合到半导体衬底的半导体层，其中半导体层具有与半导体衬底相对的器件表面。该器件还包括耦合在半导体衬底和半导体层之间的至少一个纹理区域。在另一方面，该器件还包括耦合在半导体衬底和半导体层之间的至少一个电介质层。

2. 发明申请

WO2011119618A2 DEVICES HAVING ENHANCED ELECTROMAGNETIC RADIATION DETECTION AND ASSOCIATED METHODS 审中-公开
标题翻译：具有增强电磁辐射检测和相关方法的装置
公开(公告)号：WO2011119618A2
公开(公告)日：2011-09-29
申请号：PCT/US2011/029447
申请日：2011-03-22
申请人： SIONYX, INC. , ALIE, Susan , PRALLE, Martin, U. , PALSULE, Chintamani , MCKEE, Jeffrey , LI, Xia
发明人： ALIE, Susan , PRALLE, Martin, U. , PALSULE, Chintamani , MCKEE, Jeffrey , LI, Xia
IPC分类号： H01L31/101 , H01L31/0236
CPC分类号： H01L31/02327 , H01L27/1463 , H01L27/14632 , H01L27/14687 , H01L31/1892 , Y02E10/50
摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.
摘要翻译：提供了感光半导体器件和相关方法。一方面，半导体器件可以包括半导体衬底和耦合到半导体衬底的半导体层，其中半导体层具有与半导体衬底相对的器件表面。该器件还包括耦合在半导体衬底和半导体层之间的至少一个纹理区域。在另一方面，该器件还包括耦合在半导体衬底和半导体层之间的至少一个电介质层。

3. 发明申请

WO2011022687A3 LASER PROCESSED HETEROJUNCTION PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：激光加工异构光电器件及相关方法
公开(公告)号：WO2011022687A3
公开(公告)日：2011-07-21
申请号：PCT/US2010046216
申请日：2010-08-20
申请人： SIONYX INC , CAREY JAMES , PRALLE MARTIN U
发明人： CAREY JAMES , PRALLE MARTIN U
IPC分类号： H01L31/072 , H01L31/042
CPC分类号： H01L31/072 , H01L31/02363 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： Heterojunction devices and associated methods of making and using are provided. In one aspect, for example, a heterojunction photovoltaic device can include a crystalline semiconductor layer, a first doped semiconductor layer coupled to the crystalline semiconductor layer, and a second doped semiconductor layer coupled to the crystalline semiconductor layer opposite the first doped semiconductor layer. The first and second doped semiconductor layers form junctions with the semiconductor layer. The device can further include a laser processed semiconductor region coupled to the crystalline semiconductor layer.
摘要翻译：提供异质结装置及相关的制造和使用方法。在一个方面，例如，异质结光伏器件可以包括晶体半导体层，耦合到晶体半导体层的第一掺杂半导体层和耦合到与第一掺杂半导体层相对的晶体半导体层的第二掺杂半导体层。第一和第二掺杂半导体层与半导体层形成结。该器件还可以包括耦合到晶体半导体层的激光处理的半导体区域。

4. 发明申请

WO2010127298A2 LOW OXYGEN CONTENT SEMICONDUCTOR MATERIAL FOR SURFACE ENHANCED PHOTONIC DEVICES ASSOCIATED METHODS 审中-公开
标题翻译：表面增强光电器件的低氧含量半导体材料相关方法
公开(公告)号：WO2010127298A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/033253
申请日：2010-04-30
申请人： SIONYX, INC. , CAREY, James , LI, Xia , ALIE, Susan , PRALLE, Martin, U.
发明人： CAREY, James , LI, Xia , ALIE, Susan , PRALLE, Martin, U.
IPC分类号： H01L31/101 , H01L31/18 , H01L21/324 , H01L21/265
CPC分类号： H01L21/268 , H01L21/223 , H01L21/324 , H01L31/0256 , H01L31/101 , H01L31/18
摘要： Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation- absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C to about 1100° C, wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment.
摘要翻译：提供了辐射吸收半导体器件及相关的制造和使用方法。一方面，例如，制造具有增强的光响应的辐射吸收半导体器件的方法可以包括在低氧含量半导体的表面上形成有源区，并将低氧含量半导体退火至约300 ℃至约1100℃，其中活性区域的形成和低氧含量半导体的退火在基本上耗氧的环境中进行。

5. 发明申请

WO2013010127A3 BIOMETRIC IMAGING DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：生物成像成像装置和相关方法
公开(公告)号：WO2013010127A3
公开(公告)日：2013-07-11
申请号：PCT/US2012046768
申请日：2012-07-13
申请人： SIONYX INC , SAYLOR STEPHEN D , PRALLE MARTIN U
发明人： SAYLOR STEPHEN D , PRALLE MARTIN U
IPC分类号： G06K9/46 , G06K9/20
CPC分类号： H04N5/33 , G06K9/00604 , H04N7/183
摘要： Systems, devices, and methods for identifying an individual are provided. In one aspect, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from 700 nm to 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can include an image processing module functionally coupled to the imager device to processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a device layer having a thickness of less than about 10 microns, two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an EQE of at least 33% for at least one wavelength of greater than 800 nm.
摘要翻译：提供了用于识别个体的系统，设备和方法。在一个方面，用于识别个体的系统可以包括能够发射具有从700nm至1200nm的至少一个波长的电磁辐射的主动光源，以及定位成当从个体反射时接收电磁辐射的成像器装置，生成个人的电子表示。该系统可以包括图像处理模块，该图像处理模块在功能上耦合到成像器设备以将电子表示处理成具有至少一个基本上唯一的标识特征的单独表示。成像器装置可以包括具有小于约10微米的厚度的器件层，形成结的两个掺杂区以及定位成与电磁辐射相互作用的纹理化区域，并且可以具有至少33％的EQE，用于至少一个波长大于800纳米。

6. 发明申请

WO2013010127A2 BIOMETRIC IMAGING DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：生物成像装置及相关方法
公开(公告)号：WO2013010127A2
公开(公告)日：2013-01-17
申请号：PCT/US2012/046768
申请日：2012-07-13
申请人： SIONYX, INC. , SAYLOR, Stephen D. , PRALLE, Martin U.
发明人： SAYLOR, Stephen D. , PRALLE, Martin U.
IPC分类号： G06K9/46 , G06K9/20
CPC分类号： H04N5/33 , G06K9/00604 , H04N7/183
摘要： Systems, devices, and methods for identifying an individual are provided. In one aspect, a system for identifying an individual can include an active light source capable of emitting electromagnetic radiation having at least one wavelength of from 700 nm to 1200 nm, and an imager device positioned to receive the electromagnetic radiation upon reflection from an individual to generate an electronic representation of the individual. The system can include an image processing module functionally coupled to the imager device to processes the electronic representation into an individual representation having at least one substantially unique identification trait. The imager device can include a device layer having a thickness of less than about 10 microns, two doped regions forming a junction, and a textured region positioned to interact with the electromagnetic radiation, and can have an EQE of at least 33% for at least one wavelength of greater than 800 nm.
摘要翻译：提供了用于识别个人的系统，设备和方法。在一个方面，用于识别个体的系统可以包括能够发射具有700nm至1200nm的至少一个波长的电磁辐射的有源光源，以及定位成在从个体到个体到反射时接收电磁辐射的成像器装置生成个人的电子表示。该系统可以包括功能上耦合到成像器装置的图像处理模块，以将电子表示处理成具有至少一个基本上唯一的识别特征的个体表示。成像装置可以包括具有小于约10微米的厚度的器件层，形成结的两个掺杂区域和被定位成与电磁辐射相互作用的纹理区域，并且至少可以具有至少33％的EQE 一个波长大于800nm。

7. 发明申请

WO2011022687A2 LASER PROCESSED HETEROJUNCTION PHOTOVOLTAIC DEVICES AND ASSOCIATED METHODS 审中-公开
标题翻译：激光处理的异质结光伏器件和相关方法
公开(公告)号：WO2011022687A2
公开(公告)日：2011-02-24
申请号：PCT/US2010/046216
申请日：2010-08-20
申请人： SIONYX, INC. , CAREY, James , PRALLE, Martin, U.
发明人： CAREY, James , PRALLE, Martin, U.
IPC分类号： H01L31/072 , H01L31/042
CPC分类号： H01L31/072 , H01L31/02363 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： Heterojunction devices and associated methods of making and using are provided. In one aspect, for example, a heterojunction photovoltaic device can include a crystalline semiconductor layer, a first doped semiconductor layer coupled to the crystalline semiconductor layer, and a second doped semiconductor layer coupled to the crystalline semiconductor layer opposite the first doped semiconductor layer. The first and second doped semiconductor layers form junctions with the semiconductor layer. The device can further include a laser processed semiconductor region coupled to the crystalline semiconductor layer.
摘要翻译：提供了异质结器件和相关的制造和使用方法。在一个方面，例如，异质结光伏器件可以包括晶体半导体层，耦合到晶体半导体层的第一掺杂半导体层以及耦合到与第一掺杂半导体层相对的晶体半导体层的第二掺杂半导体层。第一和第二掺杂半导体层与半导体层形成结。该器件可以进一步包括耦合到晶体半导体层的激光处理半导体区域。

8. 发明申请

WO2010127298A3 LOW OXYGEN CONTENT SEMICONDUCTOR MATERIAL FOR SURFACE ENHANCED PHOTONIC DEVICES ASSOCIATED METHODS 审中-公开
标题翻译：表面增强光电器件的低氧含量半导体材料相关方法
公开(公告)号：WO2010127298A3
公开(公告)日：2011-02-24
申请号：PCT/US2010033253
申请日：2010-04-30
申请人： SIONYX INC , CAREY JAMES , LI XIA , ALIE SUSAN , PRALLE MARTIN U
发明人： CAREY JAMES , LI XIA , ALIE SUSAN , PRALLE MARTIN U
IPC分类号： H01L31/101 , H01L21/265 , H01L21/324 , H01L31/18
CPC分类号： H01L21/268 , H01L21/223 , H01L21/324 , H01L31/0256 , H01L31/101 , H01L31/18
摘要： Radiation-absorbing semiconductor devices and associated methods of making and using are provided. In one aspect, for example, a method for making a radiation- absorbing semiconductor device having enhanced photoresponse can include forming an active region on a surface of a low oxygen content semiconductor, and annealing the low oxygen content semiconductor to a temperature of from about 300° C to about 1100° C, wherein the forming of the active region and the annealing of the low oxygen content semiconductor are performed in a substantially oxygen-depleted environment.
摘要翻译：提供了辐射吸收半导体器件及相关的制造和使用方法。一方面，例如，制造具有增强的光响应的辐射吸收半导体器件的方法可以包括在低氧含量半导体的表面上形成有源区，并将低氧含量半导体退火至约300 ℃至约1100℃，其中活性区域的形成和低氧含量半导体的退火在基本上耗氧的环境中进行。

9. 发明申请

WO2006007446A3 PHOTONIC CRYSTAL EMITTER, DETECTOR, AND SENSOR 审中-公开
标题翻译：光电晶体发射器，探测器和传感器
公开(公告)号：WO2006007446A3
公开(公告)日：2009-04-02
申请号：PCT/US2005021617
申请日：2005-06-17
申请人： ION OPTICS INC , PRALLE MARTIN U , DALY JAMES T , PUSCASU IRINA , MCNEAL MARK P , JOHNSON EDWARD A
发明人： PRALLE MARTIN U , DALY JAMES T , PUSCASU IRINA , MCNEAL MARK P , JOHNSON EDWARD A
IPC分类号： H01L33/00
CPC分类号： G01J5/20 , B82Y20/00 , G01J1/02 , G01J1/0252 , G01J1/42 , G01J3/02 , G01J3/0286 , G01J3/108 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/08 , G01J5/0803 , G01J5/0853 , G01J5/0862 , G01N21/3504 , G01N2021/317 , G01N2021/3513 , G02B6/1225 , H01L27/14676
摘要： An infrared emitter, which utilizes a photonic bandgap (PBG) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of holes are defined in the device in a periodic manner, wherein each hole extends at least partially through the metallic material layer. The three material layers are adapted to transfer energy from the semiconductor material layer to the outer side of the metallic material layer and emit electromagnetic energy in a narrow band of wavelengths from the outer side of the metallic material layer.
摘要翻译：利用光子带隙（PBG）结构产生具有窄波长波段的电磁发射的红外发射器包括半导体材料层，覆盖半导体材料层的电介质材料层和具有内侧重叠的金属材料层介电材料层。半导体材料层能够耦合到能量源以将能量引入到半导体材料层。定期地在器件中限定一组孔，其中每个孔至少部分地延伸通过金属材料层。三个材料层适于将能量从半导体材料层转移到金属材料层的外侧，并从金属材料层的外侧发射出窄波长的波长的电磁能。

10. 发明申请

WO2008127648A1 ABSORPTION SPECTROSCOPY APPARATUS AND METHOD 审中-公开
标题翻译：吸收光谱仪和方法
公开(公告)号：WO2008127648A1
公开(公告)日：2008-10-23
申请号：PCT/US2008/004703
申请日：2008-04-11
申请人： ION OPTICS, LLC , PRALLE, Martin, U. , PUSCASU, Irina , FLOWERS, Peter
发明人： PRALLE, Martin, U. , PUSCASU, Irina , FLOWERS, Peter
IPC分类号： G01J5/02
CPC分类号： G01N21/0303 , G01N21/031 , G01N21/05 , G01N2021/0378 , G01N2201/0637
摘要： An absorption spectroscopy apparatus including an elliptical mirror centered on the midpoint between a source/detector and a mirror. The cavity between the elliptical mirror and the source/bolometer and mirror defines an interior volume of a sample cell. Electromagnetic radiation from the source/detector travels along a multi-segment path starting from the source/bolometer toward the elliptical mirror, reflecting off of the elliptical mirror and traveling toward the mirror, reflecting off of the mirror and traveling back toward the elliptical mirror and finally reflecting off the elliptical mirror for a second time and returning toward the source/bolometer. The multiple reflections combined with the focusing effects of the elliptical mirrored surface result in an efficient sampling device. Among other aspects and advantages, the apparatus of the present disclosure is able to use incoherent, non-collimated light sources while maintaining high optical throughput efficiencies.
摘要翻译：一种吸收光谱仪，包括以源/检测器和反射镜之间的中点为中心的椭圆镜。椭圆镜和源/测辐射热计和反射镜之间的空腔限定了样品池的内部体积。来自/检测器的电磁辐射沿着从光源/测辐射热计朝着椭圆镜开始的多段路径行进，从椭圆镜反射离开并朝向反射镜行进，反射离开反射镜并朝向椭圆镜返回，终于从椭圆镜反射了第二次，并返回到源头/测辐射热计。多重反射与椭圆形镜面的聚焦效应相结合形成了一种高效的采样装置。除了其它方面和优点之外，本公开的装置能够使用非相干的非准直光源，同时保持高的光通量效率。

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