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11. 发明专利

JP2008166767A Apparatus and method for mounting silicon ingot 审中-公开
标题翻译：装置和方法安装硅胶
公开(公告)号：JP2008166767A
公开(公告)日：2008-07-17
申请号：JP2007326448
申请日：2007-12-18
申请人： Siltron Inc , シルトロンインク
发明人： JO YONG-JOON
IPC分类号： H01L21/304 , B28D7/04
CPC分类号： B28D5/0082 , Y10T156/10
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for mounting a silicon ingot, where the adhesion and drying time of an adhesive can be shortened. SOLUTION: The present invention relates to apparatus and method for mounting the silicon ingot, the apparatus including a frame; a mounter placed on the frame for mounting the silicon ingot; a pressing member installed movably to the frame for pressing the silicon ingot toward the mounter; and a heat or light-emitting member, arranged to emit heat or light to an adhesive member interposed between the silicon ingot and the mounter. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于安装硅锭的装置和方法，其中可以缩短粘合剂的粘合和干燥时间。解决方案：本发明涉及用于安装硅锭的装置和方法，该装置包括框架; 安装器放置在框架上用于安装硅锭; 按压构件，其可移动地安装到所述框架上，用于将所述硅锭压向所述安装器; 以及散热或发光构件，其布置成将热或光发射到介于硅锭和安装器之间的粘合构件。版权所有（C）2008，JPO＆INPIT

12. 发明专利

JP2007318160A Silicon wafer 审中-公开
标题翻译：硅胶
公开(公告)号：JP2007318160A
公开(公告)日：2007-12-06
申请号：JP2007175211
申请日：2007-07-03
申请人： Siltron Inc , シルトロンインク
发明人： YOON SUNG-HO , BAE SO IK , MUN YOUNG HEE
IPC分类号： H01L21/322 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/02
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer in which slip generation in a high temperature process is perfectly controlled, and uniform and sufficient DZ and COP free region are formed as the active region of an element, and a BMD with high density is secured in a bulk region.
SOLUTION: This silicon wafer has a front face, a rear face, a peripheral edge and a region between the front face and the rear face as a typical configuration. The silicon wafer has nitride concentration ranging from 1E12 atoms/cm
3 to 1E14 atoms/cm
3 . A region formed from the surface of the front face and the rear face to at least the depth of 8 μm is measured, after the wafer is grinded to a given depth. The number of LPDN (Light Point Defect Non-cleanable) about a defect having a size of 0.065 μm or more, is 20 pieces or less per wafer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种硅晶片，其中高温工艺中的滑移产生被完全控制，并且形成均匀和足够的DZ和COP自由区域作为元件的有源区域，并且具有高的BMD 密度固定在大块区域。作为典型的结构，该硅晶片具有前表面，后表面，周边边缘以及正面和背面之间的区域。硅晶片的氮化物浓度范围为1E12原子/厘米3（SP 3）至1E 14原子/ cm 3。在将晶片磨削至给定深度之后，测量从前表面和后表面至少形成8μm深度的区域。关于尺寸为0.065μm以上的缺陷的LPDN（光点缺陷不可清洗）的数量为每片晶片20片以下。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2006179898A Gallium nitride semiconductor and method for manufacturing same 审中-公开
标题翻译：氮化镓半导体及其制造方法
公开(公告)号：JP2006179898A
公开(公告)日：2006-07-06
申请号：JP2005358071
申请日：2005-12-12
申请人： Siltron Inc , シルトロンインク
发明人： KIM YONG JIN , LEE DONG-KUN
IPC分类号： H01L21/205 , C23C16/02 , H01L33/12 , H01L33/32 , H01S5/343
CPC分类号： C30B29/406 , H01L21/02381 , H01L21/0243 , H01L21/02439 , H01L21/0254 , H01L21/02658
摘要： PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor and a method for manufacturing the same. SOLUTION: The GaN semiconductor is capable of reducing defects due to the lattice constant difference via a blast process of a substrate and further, of suppressing the inner residual stress to a minimum, and the method is provided for manufacturing the same. In particular, by forming a GaN thin film of high quality using a silicon substrate, it is possible to obtain a large-diameter substrate of high quality at a low cost and to reduce the manufacturing cost, and thereby, various elements and circuit applicability can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种氮化镓半导体及其制造方法。解决方案：GaN半导体能够通过衬底的喷砂工艺减少由于晶格常数差异引起的缺陷，并且还将内部残余应力抑制到最小，并且提供了制造该方法。特别地，通过使用硅基板形成高质量的GaN薄膜，可以以低成本获得高质量的大直径基板，并降低制造成本，从而各种元件和电路适用性可以得到。版权所有（C）2006，JPO＆NCIPI

14. 发明专利

JP2005260230A Nitride semiconductor device and manufacturing method of the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：JP2005260230A
公开(公告)日：2005-09-22
申请号：JP2005062895
申请日：2005-03-07
申请人： Siltron Inc , シルトロンインク
发明人： YI GYU-CHUL , AN SUNG JIN , KIM YONG JIN
IPC分类号： C23C16/34 , C23C16/40 , H01L21/205 , H01L27/15 , H01L29/04 , H01L29/10 , H01L29/26 , H01L31/036 , H01L31/0376 , H01L31/12 , H01L31/20
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02472 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L33/12 , Y10S977/759
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor device excellent in light efficiency and to provide a manufacturing method of the same. SOLUTION: The nitride semiconductor device is vapor-deposited and distributed on a substrate, a large number of cylindrical semiconductor nano bars grown on the substrate, between the semiconductor nano bars and the upper sections of the semiconductor nano bars, and contains a nitride semiconductor film emitting lights of ultraviolet-ray, visible light and infrared-ray areas. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供光效率优异的氮化物半导体器件，并提供其制造方法。解决方案：氮化物半导体器件气相沉积并分布在衬底上，在衬底上生长的大量圆柱形半导体纳米棒，半导体纳米棒和半导体纳米棒的上部之间，并且包含紫外线，可见光和红外线区域的氮化物半导体膜发射光。版权所有（C）2005，JPO＆NCIPI

15. 发明专利

JP2005162599A Single crystal silicon ingot and wafer having homogeneous vacancy defect, and method and apparatus for making same 审中-公开
标题翻译：具有均质异位缺陷的单晶硅入口和波形，以及制造其的方法和装置
公开(公告)号：JP2005162599A
公开(公告)日：2005-06-23
申请号：JP2004277017
申请日：2004-09-24
申请人： Siltron Inc , シルトロンインク
发明人： HONG YOUNG HO , CHOI ILL SOO , KIM SANG HEE , KWAK MAN SEOK , LEE HONG-WOO
IPC分类号： C30B15/14 , C30B15/20 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T428/21
摘要： PROBLEM TO BE SOLVED: To manufacture a single crystal silicon ingot having homogeneous vacancy defect density and distribution in a radial direction by removing minute vacancy defects not larger than a critical size that adversely affects the voltage-resistance characteristics of an oxide film. SOLUTION: In this manufacturing method, the single crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20 K/cm in a range in which the temperature of the ingot measures from 1,000 to 1,100 °C when the single crystal silicon ingot is manufactured by a Czochralski method. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过去除不大于不利地影响氧化膜的耐电压特性的临界尺寸的微小空位缺陷来制造具有均匀的空位缺陷密度和径向分布的单晶硅锭。解决方案：在该制造方法中，在晶锭的温度为1,000以下的范围内，在锭的温度变化小于或等于20K / cm的条件下生长单晶硅锭当单晶硅锭通过切克劳斯（Czochralski）法制造时，达到1100℃。版权所有（C）2005，JPO＆NCIPI

16. 发明专利

JP2005086195A Silicon wafer and method of fabricating the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：JP2005086195A
公开(公告)日：2005-03-31
申请号：JP2003424487
申请日：2003-12-22
申请人： Hynix Semiconductor Inc , Siltron Inc , シルトロンインク , 株式会社ハイニックスセミコンダクター
发明人： MUN YOUNG HEE , KIM GUN , KOH CHUNG GEUN , PYI SEUNG HO
IPC分类号： C30B29/06 , H01L21/00 , H01L21/02 , H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer and a method of fabricating the same, in which an ideal device active zone is formed from a surface of a wafer to a fixed depth, and an oxygen sludge and a bulk stacking fault have a constant density to the direction of the depth in the internal region (bulk region) of the wafer. SOLUTION: The silicon wafer has a front face, a rear face, a marginal edge portion and a region in between the front face and the rear face. The silicon wafer is comprised of a first DZ formed from the front face of the wafer to a predetermined depth, a second DZ formed from the rear face of the wafer to the predetermined depth, and the bulk region formed between the first DZ and the second DZ, in which the density profile of the fault is kept at a constant distribution from the front face of the wafer to the direction of the rear face. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种硅晶片及其制造方法，其中从晶片表面到固定深度形成理想的器件活性区，以及氧污泥和块体堆垛层错对晶片的内部区域（体积区域）的深度方向具有恒定的密度。解决方案：硅晶片具有前表面，后表面，边缘部分以及前表面和后表面之间的区域。硅晶片由从晶片的前表面形成到预定深度的第一DZ，从晶片的后表面形成到预定深度的第二DZ，以及形成在第一DZ和第二DZ之间的主体区域 DZ，其中故障的密度分布保持从晶片的前表面到后表面的方向上的恒定分布。版权所有（C）2005，JPO＆NCIPI

17. 发明专利

JP2004072066A Method of manufacturing annealed wafer 审中-公开
标题翻译：制造退火波的方法
公开(公告)号：JP2004072066A
公开(公告)日：2004-03-04
申请号：JP2002381755
申请日：2002-12-27
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , H01L21/3221
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an annealed wafer for manufacturing a high-quality annealed wafer in which crystal defects do not exist in the silicon wafer and boron concentration is constant yielding uniform specific resistivity, for giving high heat treatment efficiency, and for reducing the manufacturing cost.
SOLUTION: The method contains a first heat treatment step in which a silicon wafer is preheated at approximately 500°C in a heat treatment furnace of a gas atmosphere of any one of argon gas, nitrogen gas, or an inert gas containing these, a second heat treatment step in which the wafer is heat treated by changing the gas atmosphere in the heat treatment furnace to 100% hydrogen gas atmosphere to remove adsorbed boron on the surface of the silicon wafer while raising the temperature to a constant temperature of approximately 850°C to 1150°C, a third heat treatment step in which the gas atmosphere in the heat treatment furnace to 100% argon atmosphere, and after the temperature is raised to approximately 1200°C, the wafer is heat treated keeping the temperature at that value for approximately 1 hour, and a temperature lowering step in which the temperature in the heat treatment furnace is lowered down to approximately 500°C or lower.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种制造用于制造硅晶片中不存在晶体缺陷的高质量退火晶片的退火晶片的方法，并且硼浓度恒定，产生均匀的电阻率，用于产生高热处理效率和降低制造成本。解决方案：该方法包括第一热处理步骤，其中在氩气，氮气或含有这些的气体的惰性气体中的任何一种的气体气氛的热处理炉中，将硅晶片预热约500℃ ，第二热处理步骤，其中通过将热处理炉中的气体气氛改变为100％氢气气氛来对晶片进行热处理，以除去硅晶片表面上的吸附的硼，同时将温度升高至大约的恒定温度 850℃至1150℃，第三热处理步骤，其中将热处理炉中的气体气氛加入到100％氩气氛中，并且在温度升高至约1200℃之后，将晶片进行热处理，将温度保持在该值约1小时，以及将热处理炉中的温度降低到约500℃以下的降温步骤。版权所有（C）2004，JPO

18. 发明专利

JP2009114054A Method for producing semiconductor single crystal having improved oxygen concentration characteristics 审中-公开
标题翻译：生产具有改善氧化浓度特性的半导体单晶的方法
公开(公告)号：JP2009114054A
公开(公告)日：2009-05-28
申请号：JP2008273496
申请日：2008-10-23
申请人： Siltron Inc , シルトロンインク
发明人： CHO HYON-JONG , SHIN SEUNG-HO , MOON JI-HUN , LEE HONG-WOO , HONG YOUNG-HO
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor single crystal presenting crucible rotation conditions controlling the oxygen concentration to reduce the oxygen concentration deviation in a prime zone during growth of a large-diameter single crystal of, for example, 12-inch diameter.
SOLUTION: The method for producing a semiconductor single crystal using a Czochralski (Cz) method for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt housed in a quartz crucible, and pulling the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled while the quartz crucible is rotated with a rate of from 0.6 to 1.5 rpm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体单晶呈现坩埚旋转条件的方法，所述旋转条件控制氧浓度以降低大直径单晶生长期间的初始区中的氧浓度偏差，例如， 12寸直径。解决方案：使用Czochralski（Cz）方法制造半导体单晶的方法，用于通过将种子浸入容纳在石英坩埚中的半导体熔体中并通过固 - 液界面生长半导体单晶，并拉出种子同时旋转石英坩埚并施加强的水平磁场，其中当石英坩埚以0.6至1.5rpm的速率旋转时拉动种子。版权所有（C）2009，JPO＆INPIT

19. 发明专利

JP2009102218A Method for manufacturing compound semiconductor substrate 审中-公开
标题翻译：制造化合物半导体基板的方法
公开(公告)号：JP2009102218A
公开(公告)日：2009-05-14
申请号：JP2008190934
申请日：2008-07-24
申请人： Siltron Inc , シルトロンインク
发明人： LEE HO-JUN , KIM YONG JIN , LEE DONG-KUN , KIM DOO-SOO , KIM JI HUN
IPC分类号： C30B29/38 , C23C16/01 , C30B25/18 , H01L21/205
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02639 , H01L21/02642 , H01L21/02664
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor substrate such as gallium nitride having few dislocation, which need not apply a laser lift-off process for separating an epitaxial layer of the compound semiconductor from the substrate.
SOLUTION: This method for manufacturing the compound semiconductor substrate comprises a step of coating the substrate 10 with a plurality of spherical balls 20; a step of forming voids 35 under the spherical balls 20 while growing an epitaxial layer 30 of a compound semiconductor on the substrate 10 coated with the spherical balls 20; a step of cooling the substrate 10 on which the epitaxial layer 30 of the compound semiconductor is grown so that the epitaxial layer 30 of the compound semiconductor is self-split from the substrate 10 along the voids 35. The method demonstrates an effect to reduce dislocation by virtue of spherical ball treatment, also as it utilizes self-splitting, it need not to apply the laser lift-off process for separating the epitaxial layer of the compound semiconductor from the substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造化合物半导体衬底的方法，所述化合物半导体衬底例如几乎没有位错的氮化镓，不需要用于从衬底分离化合物半导体的外延层的激光剥离工艺。解决方案：用于制造化合物半导体衬底的方法包括用多个球形球20涂覆衬底10的步骤; 同时在涂覆有球形球20的基板10上生长化合物半导体的外延层30，同时在球形球20下形成空隙35的步骤; 冷却其上生长化合物半导体的外延层30的衬底10的步骤，使得化合物半导体的外延层30沿着空隙35从衬底10自我分裂。该方法证明了减少位错的效果通过球形球处理，由于利用自分裂，因此不需要施加用于将化合物半导体的外延层与基板分离的激光剥离工艺。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2008166805A Method of manufacturing silicon wafer with high planarity 审中-公开
标题翻译：具有高平面度的硅波的制造方法
公开(公告)号：JP2008166805A
公开(公告)日：2008-07-17
申请号：JP2007337093
申请日：2007-12-27
申请人： Siltron Inc , シルトロンインク
发明人： NAM BYUNG-WOOK
IPC分类号： H01L21/304 , B24B7/22
CPC分类号： B24B37/042 , H01L21/02008 , H01L21/02019
摘要： PROBLEM TO BE SOLVED: To effectively remove a damaged layer generated during a grinding process, to secure high planarity by a minimum amount of polishing in a successive polishing process, and to solve the problem of metallic contamination that can occur during the progress of these processes.
SOLUTION: A method of manufacturing a silicon wafer with high-planarity includes: a step (S21) of slicing an ingot of silicon single crystal to produce the wafers; a step (S22) of chamfering the edge of the sliced wafers; a step (S23) of lapping the chamfered wafers; a step (S24) of etching the lapped wafers; a step (S25) of grinding the etched wafers; a step (S26) of slight-etching the wafers by using an alkaline solution, to remove the damaged layer generated in the ground wafers; a step (S27) of polishing both sides or one side of the slight-etched wafers; and a step (S28) of cleaning the polished wafers.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了有效地去除研磨过程中产生的损伤层，通过在连续抛光工艺中的最小抛光量来确保高平坦度，并且解决在进行过程中可能发生的金属污染的问题的这些过程。解决方案：制造具有高平面度的硅晶片的方法包括：将单晶硅锭切片以制造晶片的步骤（S21）; 对切片晶片的边缘进行倒角的步骤（S22）; 研磨倒角晶片的步骤（S23）; 蚀刻重叠晶片的工序（S24）研磨被蚀刻的晶片的工序（S25）通过使用碱性溶液轻微蚀刻晶片的步骤（S26）来去除在晶片中产生的损伤层; 抛光微蚀刻晶片的两侧或一侧的台阶（S27）以及清洁抛光的晶片的步骤（S28）。版权所有（C）2008，JPO＆INPIT

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