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    • 11. 发明授权
    • Method for making high speed, high areal density inductive write structure
    • 制造高速,高密度感应写入结构的方法
    • US07007372B1
    • 2006-03-07
    • US10656311
    • 2003-09-05
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • G11B5/127H04R31/00
    • G11B5/3146G11B5/3109G11B5/3113G11B5/3116G11B5/313G11B5/3153G11B5/3967Y10T29/49032Y10T29/49039Y10T29/49043Y10T29/49048Y10T29/49052Y10T29/49071Y10T29/49073
    • An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
    • 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩(高B sat sat)材料构成的基座,其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括一高层高层材料的薄层(也优选具有CoZrCr叠层的FeRhN纳米晶膜),其余部分由能够电镀的磁性材料构成,例如Ni -Fe合金。 导电线圈通过第一和第二极之间的磁轭,当电流流过线圈时,引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场,由此可以将信号传递到通过的磁介质上。
    • 12. 发明授权
    • Write head with high moment film layer having tapered portion extending beyond write gap layer
    • 用具有锥形部分延伸超过写间隙层的高力矩膜层写头
    • US06873494B2
    • 2005-03-29
    • US10134799
    • 2002-04-29
    • Yingjian ChenXiaozhong Dang
    • Yingjian ChenXiaozhong Dang
    • G11B5/31G11B5/39G11B5/40
    • B82Y25/00B82Y10/00G11B5/3106G11B5/313G11B5/3133G11B5/3153G11B5/3163G11B5/40G11B2005/3996
    • An inductive write head structure incorporating a high moment film in conjunction with at least one pole (e.g., the bottom pole) for use with magnetic storage media and a process for producing the same in which a lift-off photoresist mask is used prior to the deposition of the high moment sputtered film. Following the lift-off process, the high moment film remains on the bottom pole (“P1”) pedestal (in the case of a PDZT type write head) or on the P1 itself (in the case of a Stitched Pole write head). The edge of the lift-off sputtered film is then covered by cured photoresist insulation which is placed at a distance away from the air bearing surface (“ABS”). The coverage of insulation at the edge of the sputtered film is desirable in order to avoid forming a topographic step which may have undesired consequences in the subsequent top pole formation processes.
    • 结合至少一个极(例如,底极)与磁存储介质一起使用的高力矩膜的感应写头结构及其制造方法,其中在剥离光刻胶掩模之前使用剥离光致抗蚀剂掩模 沉积高速溅射膜。 在剥离过程之后,高力矩胶片保留在底极(“P1”)底座上(在PDZT型写入头的情况下)或P1本身(在缝合杆写入头的情况下)。 然后,剥离溅射膜的边缘被固定的光致抗蚀剂绝缘体覆盖,该固化的光致抗蚀剂绝缘体被放置在远离空气支承表面(“ABS”)的一定距离处。 在溅射膜的边缘处的绝缘层的覆盖是期望的,以避免形成在随后的顶极形成过程中可能具有不期望的后果的地形步骤。
    • 14. 发明授权
    • Method for manufacturing wraparound shield write head using hard masks
    • 使用硬掩模制造环绕屏蔽写头的方法
    • US08801943B2
    • 2014-08-12
    • US13193520
    • 2011-07-28
    • Shiwen HuangFenglin LiuQiping ZhongKyusik ShinYingjian Chen
    • Shiwen HuangFenglin LiuQiping ZhongKyusik ShinYingjian Chen
    • B44C1/22
    • G11B5/3116G11B5/3163
    • The present disclosure describes a method for manufacturing a full wraparound shield damascene write head through the implementation of a three layered (tri-layered) hard mask. According to an embodiment of the invention, the various layers of hard mask are used for different purposes during the formation of a write head. The wraparound shield head of the present invention exhibits improved physical characteristics that further result in improved performance characteristics. Use of the hard mask layers according to the present invention allows for use of manufacturing processes that can be more closely controlled than those processes used in other processes. For example, smaller dimension lithographic techniques can be used. Also, reliance on certain CMP processes is not necessary where the use of CMP processes is not as well-controlled as deposition or lithographic techniques as is possible using the present invention.
    • 本公开描述了通过实施三层(三层)硬掩模制造全封装屏蔽镶嵌写头的方法。 根据本发明的实施例,在形成写入头期间,各种硬掩模层用于不同的目的。 本发明的环绕式屏蔽头表现出改进的物理特性,进一步导致改善的性能特征。 根据本发明的硬掩模层的使用允许使用可以比其它工艺中使用的那些方法更加严格地控制的制造工艺。 例如,可以使用较小尺寸的光刻技术。 此外,在使用CMP工艺不如使用本发明可能的沉积或光刻技术那样不受控制的情况下,对某些CMP工艺的依赖是不必要的。