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11. 发明授权

US06275515B1 Semiconductor laser device and method of producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06275515B1
公开(公告)日：2001-08-14
申请号：US09238170
申请日：1999-01-28
申请人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
发明人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/3235 , H01S5/32358 , H01S5/32383
摘要： A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
摘要翻译： GaAs衬底上的半导体激光器件，其振荡波长为1.3μm或1.55μm，以及制造该激光器件的方法。激光器件具有与GaAs衬底晶格匹配的BT1GaAs有源层。为了生长BTlGaAs活性层，使用有机金属气相沉积作为Tl的来源的环戊二烯基铊。

12. 发明授权

US6154806A Method for recording digital signals on multiple-layered disks 有权
标题翻译：在多层磁盘上记录数字信号的方法
公开(公告)号：US6154806A
公开(公告)日：2000-11-28
申请号：US339816
申请日：1999-06-25
申请人： Hiroshi Hirayama , Osamu Kawamae , Masayuki Hirabayashi , Yutaka Nagai , Toshifumi Takeuchi
发明人： Hiroshi Hirayama , Osamu Kawamae , Masayuki Hirabayashi , Yutaka Nagai , Toshifumi Takeuchi
IPC分类号： G11B20/10 , G11B7/00 , G11B7/0037 , G11B7/004 , G11B7/0045 , G11B7/005 , G11B7/007 , G11B7/30 , G11B19/12 , G11B20/12 , G11B27/00 , G11B27/034 , G11B27/10 , G11B27/30 , G11B27/32 , B11B7/24
CPC分类号： G11B20/1217 , G11B19/12 , G11B27/034 , G11B27/105 , G11B27/3027 , G11B27/329 , G11B7/0037 , G11B7/0045 , G11B7/005 , G11B7/00745 , G11B20/1252 , G11B2007/0013 , G11B2020/1229 , G11B2020/1232 , G11B2020/1267 , G11B2020/1295 , G11B2220/213 , G11B2220/237 , G11B2220/2545
摘要： A method of recording digital signals on a disk having at least a first recording surface and a second recording surface. The digital signals are in the form of a data frame including a lead-in block and n data blocks. The lead-in block has a same format as the n data blocks. The method includes the steps of assigning n block addresses to respective ones of the n data blocks, assigning, to each of the n data blocks, information identifying an area on the disk in which a respective one of the n data blocks is to be recorded, recording m data block (0
摘要翻译：一种在具有至少第一记录表面和第二记录表面的盘上记录数字信号的方法。数字信号是包括导入块和n个数据块的数据帧的形式。导入块具有与n个数据块相同的格式。该方法包括以下步骤：将n个块地址分配给n个数据块中的相应的n个数据块，向n个数据块中的每个数据块分配用于识别在其中要记录n个数据块中的相应一个的盘上的区域的信息在盘的第一记录表面上记录n个数据块的m个数据块（0

13. 发明授权

US5983387A Information recording method, reproducing method, and reproducing apparatus 失效
公开(公告)号：US5983387A
公开(公告)日：1999-11-09
申请号：US13198
申请日：1998-01-26
申请人： Yutaka Nagai , Masafumi Nakamura , Toshifumi Takeuchi , Masayuki Hirabayashi
发明人： Yutaka Nagai , Masafumi Nakamura , Toshifumi Takeuchi , Masayuki Hirabayashi
IPC分类号： G11B20/10 , G11B7/00 , G11B7/004 , G11B11/10 , G11B11/105 , G11B20/12 , G11B20/18 , G11B27/30 , H04N5/783 , H04N5/85 , H04N9/804
CPC分类号： H04N5/783 , G11B20/1254 , G11B20/1809 , G11B27/3027 , H04N9/8042 , G11B2020/1222 , G11B2020/1232 , G11B2020/1267 , G11B2020/1287 , G11B2020/1288 , G11B2220/20 , G11B2220/213 , G11B2220/2545 , H04N5/85
摘要： In a system recording compressed video and audio signals or computer user data on a disk in the sector unit, to reproduce the data in a simple fashion at a high speed, data to be recorded on the disk is divided into data in a predetermined unit so as to add a first error correction (C1) code to each of the resultant data, which form (C1) correction blocks. Sectors are produced each including a plurality of (C1) correction blocks. Added to each (C1) correction block is a code enabling identification of a sector. To all data in the plural (C1) correction blocks, a second error correction (C2) code is added to record the resultant data on the disk to allow interleaving or deinterleaving completing in a block. The capacity of each sector is set to be substantially equal to that of a plurality of transport packets.

14. 发明授权

US5960020A Semiconductor laser diode including ridge and partially disordered active layer 失效
标题翻译：半导体激光二极管包括脊和部分无序的有源层
公开(公告)号：US5960020A
公开(公告)日：1999-09-28
申请号：US882208
申请日：1997-06-25
申请人： Yutaka Nagai
发明人： Yutaka Nagai
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01L33/44 , H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/0655 , H01S5/2059
摘要： A ridge type laser diode with a stabilized horizontal transverse mode and little variation in peak output power and a method for producing the laser. The ridge type laser diode includes a semiconductor substrate; an active layer on the semiconductor substrate, the active layer being interposed between a lower cladding layer and an upper cladding layer; and a ridge waveguide having a width, the ridge waveguide being part of the upper cladding layer so that the active layer located directly opposite the ridge waveguide is a first high refractive index region having a first refractive index; and a second high refractive index region in the central part of the first high refractive index region, having a second, higher refractive index than the first refractive index, and formed by disordering a region other than the central part and having a width less than the width of the ridge waveguide.
摘要翻译：具有稳定的水平横向模式并且峰值输出功率变化小的脊型激光二极管和用于制造激光器的方法。脊型激光二极管包括半导体衬底; 在所述半导体衬底上的有源层，所述有源层插入在下包层和上覆层之间; 和具有宽度的脊状波导，脊状波导是上部包层的一部分，使得与脊状波导正好相对的有源层为具有第一折射率的第一高折射率区域; 以及在第一高折射率区域的中心部分的第二高折射率区域，具有比第一折射率高的第二高折射率，并且通过使中心部分以外的区域失调而形成，并且具有小于脊波导的宽度。

15. 发明授权

US5469457A Semiconductor laser with COD preventing disordered regions 失效
标题翻译：半导体激光器具有COD防止无序区域
公开(公告)号：US5469457A
公开(公告)日：1995-11-21
申请号：US149958
申请日：1993-11-10
申请人： Yutaka Nagai , Akihiro Shima
发明人： Yutaka Nagai , Akihiro Shima
IPC分类号： H01S5/00 , H01S5/022 , H01S5/042 , H01S5/16 , H01S5/22 , H01S5/223 , H01S5/343 , H01S3/18 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/02232 , H01S5/168 , H01S5/221 , H01S5/2231 , H01S5/3432
摘要： A semiconductor laser includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer disposed on the substrate; a quantum well structure disposed on the lower cladding layer; a second conductivity type upper cladding disposed on the quantum well structure; a ridge including a stripe-shaped second conductivity type semiconductor of a length extending in the laser resonator length direction reaching neither semiconductor laser facet and disposed on the upper cladding layer; disordered regions, i.e, window structures, formed in the quantum well structure in the vicinity of the laser resonator facets by ion-implanting a dopant impurity; and a first conductivity type current blocking layer, disposed on the upper cladding layer on the disordered quantum well structure layer, burying the ridge. Accordingly, in the window structure regions, flow of a current that does not produce laser light is prevented, resulting in a semiconductor laser having a high power light output, a low threshold current, and a low operational current.
摘要翻译：半导体激光器包括：第一导电型半导体衬底; 设置在所述基板上的第一导电型下包层; 设置在下包层上的量子阱结构; 设置在量子阱结构上的第二导电型上包层; 包括沿激光谐振器长度方向延伸的长度的条状第二导电型半导体的脊不到达半导体激光刻面并且设置在上覆层上; 通过离子注入掺杂剂杂质在激光谐振器面附近在量子阱结构中形成的无序区域，即窗结构; 以及第一导电型电流阻挡层，设置在无序量子阱结构层上的上覆层上，埋入脊。因此，在窗口结构区域中，防止不产生激光的电流的流动，导致具有高功率光输出，低阈值电流和低工作电流的半导体激光器。

16. 发明授权

US5247396A PCM signal recording method and apparatus for recording four-channel data to be compatible with two-channel data 失效
标题翻译：用于记录四通道数据以与双通道数据兼容的PCM信号记录方法和装置
公开(公告)号：US5247396A
公开(公告)日：1993-09-21
申请号：US350402
申请日：1989-05-11
申请人： Yutaka Nagai , Toshifumi Takeuchi
发明人： Yutaka Nagai , Toshifumi Takeuchi
IPC分类号： G11B20/00 , G11B20/10 , G11B20/12 , G11B20/18
CPC分类号： G11B20/00992 , G11B20/00007 , G11B20/10527 , G11B20/1208 , G11B20/1809 , G11B20/1211 , G11B2020/10546 , G11B2020/1087 , G11B2220/90 , G11B2220/913
摘要： A PCM signal recording/reproducing apparatus includes write means for writing data on a recording medium, a data detecting circuit for detecting data from the recording medium, a temporary storage unit for storing temporarily the data to be recorded on the recording medium or the data reproduced from the recording medium, an error correcting circuit for correcting error of the data through cooperation with the storage unit and a switching circuit for changing over a first mode in which first data of two channels each having a sampling frequency of 48 KHz and a quantization bit number of n are recorded/reproduced with a second mode in which second data of two channels each having a sampling frequency of 32 KHz and a quantization bit number of n are recorded/reproduced in accordance with a recording format having a data location for the input data and dummy data location for dummy data to be added to the input data. Upon recording/reproduction of data of four channels including data of main two channels each having a sampling frequency of 32 KHz and a quantization number bits of n and two-sub-channels, recording/reproduction mode is changed over to the second mode in which the main two channel data are disposed at a data location on the recording format through the storage unit, while the input sub-two-channel data are disposed at the location for the dummy data on the recording format through a second block address control circuit.
摘要翻译： PCM信号记录/再现装置包括用于在记录介质上写入数据的写入装置，用于从记录介质检测数据的数据检测电路，临时存储单元，用于临时存储要记录在记录介质上的数据或再现的数据从记录介质，通过与存储单元协作来校正数据误差的纠错电路和用于切换第一模式的切换电路，其中每个采样频率为48KHz的两个通道的第一数据和量化位根据具有用于输入的数据位置的记录格式来记录/再现以第二模式记录/再现n个数，其中每个具有32KHz的采样频率和n的量化位数的两个通道的第二数据被记录/再现用于将要添加到输入数据的虚拟数据的数据和虚拟数据位置。在记录/再现包括每个采样频率为32KHz的主要两个信道和n个和两个子信道的量化数位的四个信道的数据时，将记录/再现模式切换到第二模式，其中主二通道数据通过存储单元设置在记录格式的数据位置，而输入的二通道数据通过第二块地址控制电路设置在记录格式上的伪数据的位置。

17. 发明授权

US5247203A Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material 失效
标题翻译：在具有干扰的非晶半导体材料的散热器上安装的半导体器件
公开(公告)号：US5247203A
公开(公告)日：1993-09-21
申请号：US649062
申请日：1991-02-01
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01L23/14 , H01L21/28 , H01L21/48 , H01L21/52 , H01L23/36 , H01L23/373 , H01L29/43 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042
CPC分类号： H01L23/3738 , H01L21/4882 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0021 , H01S5/02272 , H01S5/02484 , H01S5/0425
摘要： A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element includes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

18. 发明授权

US5223722A Superluminescent diode 失效
标题翻译：超发光二极管
公开(公告)号：US5223722A
公开(公告)日：1993-06-29
申请号：US850273
申请日：1992-03-12
申请人： Yutaka Nagai , Kenichi Kajiwara
发明人： Yutaka Nagai , Kenichi Kajiwara
IPC分类号： H01L33/10 , H01L33/14 , H01L33/30 , H01S5/042 , H01S5/10
CPC分类号： H01L33/0045 , H01S5/0425 , H01S5/10
摘要： A superluminescent diode includes a substrate; a double heterojunction structure including a first conductivity type cladding layer, an undoped or first or second conductivity type active layer, and a second conductivity type cladding layer disposed on said substrate; a first conductivity type cap layer disposed on the second conductivity type cladding layer; and a second conductivity type stripe-shaped diffusion region penetrating the cap layer and reaching into the second conductivity type cladding layer. Current is injected into the active layer through the diffusion region. The stripe-shaped diffusion region extends from a front facet toward but not reaching a rear facet and is inclined an angle in a range from 3 to 20 degrees with respect to the front facet. Accordingly, repetition of reflection and amplification of light having a directionality perpendicular to the facets is decreased and the effective reflection of light from both facets is decreased, resulting in an SLD that can operate stably even in high power output operation without inviting laser oscillation and that can be produced with a high yield.
摘要翻译：超发光二极管包括基板; 包括第一导电型包覆层，未掺杂或第一或第二导电型有源层的双异质结结构和设置在所述基板上的第二导电型包层; 设置在所述第二导电型包层上的第一导电型盖层; 以及穿透盖层并到达第二导电型包层的第二导电型条形扩散区域。通过扩散区将电流注入有源层。条形扩散区域从正面朝向但不到达后面延伸，并且相对于前刻面倾斜3〜20度的角度。因此，具有垂直于小面的方向性的光的反射和放大的重复减少，并且来自两个面的光的有效反射减小，导致即使在高功率输出操作中也可以稳定运行的SLD而不引起激光振荡，并且可以以高产率生产。

19. 发明授权

US5161164A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5161164A
公开(公告)日：1992-11-03
申请号：US693318
申请日：1991-04-29
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01S5/00 , H01S3/105 , H01S3/107 , H01S5/028 , H01S5/062 , H01S5/14 , H01S5/34
CPC分类号： B82Y20/00 , H01S3/105 , H01S3/107 , H01S5/14 , H01S5/34 , H01S5/028 , H01S5/0285 , H01S5/0622 , H01S5/3418
摘要： A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n

20. 发明授权

US5126804A Light interactive heterojunction semiconductor device 失效
标题翻译：光交互式异质半导体器件
公开(公告)号：US5126804A
公开(公告)日：1992-06-30
申请号：US710366
申请日：1991-06-03
申请人： Yutaka Nagai , Akira Takemoto , Hitoshi Watanabe
发明人： Yutaka Nagai , Akira Takemoto , Hitoshi Watanabe
IPC分类号： H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01S5/00 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/341
摘要： A semiconductor optical element includes a semiconductor layer on a semiconductor substrate, a plurality of parallel stripe-shaped grooves in the layer having widths sufficiently narrow to produce a quantum effect and spaced at an interval sufficiently narrow to produce a quantum effect in a semiconductor layer disposed between adjacent grooves, and a structure including alternating semiconductor quantum well and barrier layers disposed on the semiconductor layer in which the quantum well layer thickness is less than the depth of the grooves and sufficiently thin to produce a quantum effect and the barrier layer thickness is larger than the depth of the grooves, the quantum well and barrier layers being alternatingly disposed on the semiconductor layer in the grooves and on regions between adjacent grooves.

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