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11. 发明授权

US06969538B2 Method for heat processing of substrate 有权
标题翻译：基板热处理方法
公开(公告)号：US06969538B2
公开(公告)日：2005-11-29
申请号：US09947474
申请日：2001-09-07
申请人： Masatoshi Deguchi , Eiichi Sekimoto , Koichi Asaka , Yuji Matsuyama
发明人： Masatoshi Deguchi , Eiichi Sekimoto , Koichi Asaka , Yuji Matsuyama
IPC分类号： G03F7/38 , B05D3/02 , H01L21/00 , H01L21/027 , H01L21/31
CPC分类号： H01L21/67109 , B05D3/0209 , B05D3/0254 , H01L21/67103
摘要： The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.
摘要翻译：本发明涉及一种热处理基板的方法。在基板上形成涂膜之后，在预定的高温下烘烤基板。通过首先将衬底温度从预定的低温升高到低于涂膜反应的预定反应温度的预定中间温度来进行烘烤步骤。接下来，第二烘烤步骤将基板保持在预定中间温度一段预定的时间，然后是将基板的温度升高到高于预定反应温度的预定高温的第三步骤。当衬底的温度达到反应温度时，这导致衬底表面内的均匀温度。因此，均匀地进行由于基板表面内的涂膜的热处理引起的化学反应。

12. 发明申请

US20050048421A1 Method and system for coating and developing 审中-公开
标题翻译：涂层和开发方法和系统
公开(公告)号：US20050048421A1
公开(公告)日：2005-03-03
申请号：US10964695
申请日：2004-10-15
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano
IPC分类号： G03F7/38 , G03F7/16 , H01L21/00 , H01L21/027 , G03C1/76
CPC分类号： H01L21/67253 , G03F7/168 , H01L21/67028 , Y10S414/135
摘要： In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.
摘要翻译：在基材的涂布和显影处理中，本发明包括以下步骤：向基材供给涂布溶液以在基材上形成涂层; 在不包括在系统中的对准器进行曝光处理之后，对处理区中的基板进行显影处理; 并且在形成涂层的步骤之后并且在曝光处理之前将衬底运送到室中，然后将气密封闭室内的压力降低到预定压力，以从衬底移除附着在室内的衬底上的杂质，以预定时间，其中基于在处理区内测量的杂质的密度来调整预定压力和预定时间。根据本发明，在曝光处理之前可以除去附着在基材的涂层上的分子水平的杂质如水分，蒸汽，氧气，臭氧和有机物质以及粘附到基材的涂层的杂质如细颗粒可以在优选的条件下进行曝光处理。由于基于在预定位置测量的杂质的密度来调节压力降低时的压力，时间和减压速度，因此可以在优选的情况下去除附着在基底上的杂质，例如水分和氧气最低要求条件根据杂质的粘附量。

13. 发明授权

US06672779B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06672779B2
公开(公告)日：2004-01-06
申请号：US10244755
申请日：2002-09-17
申请人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
发明人： Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
IPC分类号： G03D500
CPC分类号： H01L21/67161 , G07C9/00103 , G07C9/00111 , G08G3/00 , H01L21/67017 , H01L21/6715 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67742 , H01L21/67748 , H01L21/67754 , Y10S134/902 , Y10S414/14
摘要： Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.
摘要翻译：在第一主晶片传送部和第二主晶片传送部的周围配置具有10层的热处理单元部和各层的涂布处理单元部，并且在热处理单元部中，对基板所需的时间的影响通过在晶片W的温度由温度调节和转移装置调节的同时转移晶片W可以大大降低生产率下降的温度调节处理。

14. 发明授权

US06402821B1 Filter unit and solution treatment unit 失效
标题翻译：过滤单元和溶液处理单元
公开(公告)号：US06402821B1
公开(公告)日：2002-06-11
申请号：US09694981
申请日：2000-10-24
申请人： Yuji Matsuyama
发明人： Yuji Matsuyama
IPC分类号： B01D1900
CPC分类号： B01D19/0031 , B01D19/0005
摘要： Nitrogen gas is blown into a developing solution tank, and a developing solution is supplied through a supply nozzle to the surface of a wafer, through a filter unit or the like, with the pressure. The filter unit has a ring-shaped flow path flowing from down upward, an impurity filter provided on the inside thereof, an exhaust passage connected to an uppermost portion of the flow path, and a bubble filter composed of, for example, a hollow fiber membrane, which is provided to block a part of the exhaust passage and has the property of transmitting gas without transmitting liquid. The dissolved nitrogen contained in the developing solution is changed to bubbles by vaporizing in the flow path, and only the bubbles can be removed from the developing solution since the aforesaid bubble filter selectively transmits these bubbles whereby the amount of the developing solution can be saved. Accordingly, it is possible to remove the bubbles contained in a treatment solution while reducing consumption of the treatment solution.
摘要翻译：将氮气吹入显影液槽中，通过供给喷嘴将显影液通过过滤器单元等与压力一起供给到晶片的表面。过滤器单元具有从下向上流动的环状流路，设置在其内部的杂质过滤器，连接到流路的最上部的排气通路，以及由例如中空纤维膜，其被设置成阻挡排气通道的一部分，并且具有在不传输液体的情况下传输气体的性质。由于上述气泡过滤器选择性地透过这些气泡，所以显影液中含有的溶解的氮气通过在流路中蒸发而变为气泡，并且只能从显影液中除去气泡，由此可以节省显影液的量。因此，可以减少处理溶液中含有的气泡，同时降低处理溶液的消耗。

15. 发明授权

US6015066A Liquid supplying device 失效
标题翻译：液体供应装置
公开(公告)号：US6015066A
公开(公告)日：2000-01-18
申请号：US991783
申请日：1997-12-16
申请人： Yoshio Kimura , Satoshi Morita , Yuji Matsuyama , Norio Semba
发明人： Yoshio Kimura , Satoshi Morita , Yuji Matsuyama , Norio Semba
IPC分类号： G03F7/30 , B67D5/08
CPC分类号： G03F7/30 , Y10T137/3124
摘要： Disclosed herein is a device for supplying a liquid to a plurality of apparatuses which apply the liquid to substrates to process the substrates. The device comprises a tank containing the liquid, a supply passage for supplying the liquid from the tank to the apparatuses, branch passages connected to the supply passage, for supplying the liquid to liquid-applying members provided in the apparatuses, and valves provided on the branch passages, respectively. The valves are controlled each other, for opening and closing the branch passages such that the liquid-applying member of one apparatus applies the liquid to a substrate while the liquid-applying member of any other apparatus remains to apply the liquid to a substrate.
摘要翻译：这里公开了一种用于将液体供应到将液体施加到基板以处理基板的多个装置的装置。该装置包括容纳液体的容器，用于将液体从罐供给到设备的供给通道，连接到供给通道的分支通道，用于将液体供应到设置在设备中的液体施加部件，分支通道。阀被彼此控制，用于打开和关闭分支通道，使得一个设备的液体施加构件将液体施加到基底，同时任何其他设备的液体施加构件保持将液体施加到基底。

16. 发明授权

US07517217B2 Method and apparatus for heat processing of substrate 失效
公开(公告)号：US07517217B2
公开(公告)日：2009-04-14
申请号：US11229555
申请日：2005-09-20
申请人： Masatoshi Deguchi , Eiichi Sekimoto , Koichi Asaka , Yuji Matsuyama
发明人： Masatoshi Deguchi , Eiichi Sekimoto , Koichi Asaka , Yuji Matsuyama
IPC分类号： F27D5/00
CPC分类号： H01L21/67109 , B05D3/0209 , B05D3/0254 , H01L21/67103
摘要： The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature. By temporarily increasing the temperature of the substrate to the intermediate temperature lower than the reaction temperature, maintaining the substrate at this intermediate temperature for the predetermined period of time, and thereafter increasing the temperature of the substrate to the high temperature higher than the reaction temperature when the temperature of the substrate is increased, the temperature within the surface of the substrate can be made uniform when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

17. 发明授权

US07408199B2 Nitride semiconductor laser device and nitride semiconductor device 有权
标题翻译：氮化物半导体激光器件和氮化物半导体器件
公开(公告)号：US07408199B2
公开(公告)日：2008-08-05
申请号：US10907398
申请日：2005-03-31
申请人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
发明人： Yuji Matsuyama , Shinji Suzuki , Kousuke Ise , Atsuo Michiue , Akinori Yoneda
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (θa) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.
摘要翻译：氮化物半导体激光装置在氮化物半导体基板的原理面上包括：具有第一导电类型的氮化物半导体层; 包含铟的有源层和具有与所述第一导电类型不同的第二导电类型的氮化物半导体层，并且其表面形成条纹脊; 所述氮化物半导体衬底的所述主面在至少基本上平行于所述条纹脊的方向上具有相对于参考晶面的偏角α（θ_{a ）。}

18. 发明申请

US20070128356A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20070128356A1
公开(公告)日：2007-06-07
申请号：US11673299
申请日：2007-02-09
申请人： Yuji Matsuyama , Takahiro Kitano , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人： Yuji Matsuyama , Takahiro Kitano , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： B05D3/12 , B05D1/40
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

19. 发明申请

US20060088072A1 Semiconductor laser apparatus 审中-公开
标题翻译：半导体激光装置
公开(公告)号：US20060088072A1
公开(公告)日：2006-04-27
申请号：US11255932
申请日：2005-10-24
申请人： Toshiro Hayakawa , Hideki Asano , Shinichi Nagahama , Yuji Matsuyama , Katsutoshi Komoto
发明人： Toshiro Hayakawa , Hideki Asano , Shinichi Nagahama , Yuji Matsuyama , Katsutoshi Komoto
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333
摘要： A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference Δn between the central region of the stripe and outside of the stripe is set not greater than 1.5×10−2.
摘要翻译：一种具有折射率引导结构的GaN系带条型半导体激光器，在横模中产生较高模式或多模振荡，其结构使得多个发射区域中的每一个的水平射束辐射角最小化以提供高亮度聚焦光束。在GaN系带状半导体激光器中，其具有例如由p-GaN覆盖层28和p-Al 0.1 Ga 0.9形成的脊结构构成的折射引导结构具有宽度W 2的N包覆层27，并且在横向模式中产生较高模式或多模式振荡，条纹的中心区域和条纹外部之间的有效折射率差Deltan被设置为不大于1.5×10 ^{-2 。}

20. 发明授权

US06884298B2 Method and system for coating and developing 失效
标题翻译：涂层和开发方法和系统
公开(公告)号：US06884298B2
公开(公告)日：2005-04-26
申请号：US10309273
申请日：2002-12-04
申请人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Hidetami Yaegashi
发明人： Junichi Kitano , Yuji Matsuyama , Takahiro Kitano , Hidetami Yaegashi
IPC分类号： G03F7/16 , G03F7/30 , G03F7/38 , H01L21/027 , C23C16/00 , C23C14/00 , C23F1/00
CPC分类号： G03F7/168
摘要： A coating and developing treatment system for performing coating and developing treatment. A coating treatment unit is configured to form a resist film on a substrate. A developing treatment unit is configured to develop the substrate. A heating/cooling unit includes a heat plate configured to continuously heat and a cooling plate configured to continuously cool in one casing the substrate on which the resist film has been formed by the coating treatment unit. A gas nozzle is configured to supply a treatment gas to the resist film formed on the substrate to form a protective film on a surface of the resist film. The gas nozzle is disposed on a cooling plate side in the heating/cooling unit. The gas nozzle is configured to move to a position above the substrate on the cooling plate during cooling at the cooling plate, to supply the treatment gas.
摘要翻译：一种用于进行涂层和显影处理的涂层和显影处理系统。涂布处理单元构造成在基板上形成抗蚀剂膜。显影处理单元构造成显影基板。加热/冷却单元包括被配置为连续加热的加热板和构造成在一个壳体中连续地冷却由涂覆处理单元形成有抗蚀剂膜的基板的冷却板。气体喷嘴被构造成将处理气体供给到形成在基板上的抗蚀剂膜，以在抗蚀剂膜的表面上形成保护膜。气体喷嘴设置在加热/冷却单元中的冷却板侧。气体喷嘴构造成在冷却板冷却期间移动到冷却板上的基板上方的位置，以供应处理气体。

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