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11. 发明授权

US5571236A Diamond wire drawing die 失效
标题翻译：金刚石拉丝模具
公开(公告)号：US5571236A
公开(公告)日：1996-11-05
申请号：US112777
申请日：1993-08-26
申请人： Toshiya Takahashi , Akihiko Ikegaya , Keiichiro Tanabe , Noaji Fujimori
发明人： Toshiya Takahashi , Akihiko Ikegaya , Keiichiro Tanabe , Noaji Fujimori
IPC分类号： B21C3/02 , C23C16/01 , C23C16/27
CPC分类号： C23C16/01 , B21C3/02 , B21C3/025 , C23C16/27 , C23C16/271 , Y10T428/24273 , Y10T428/24281 , Y10T428/24942 , Y10T428/30
摘要： A wire drawing die comprises first and second polycrystalline diamond layers made of gaseous phase synthesized diamond. The finest diamond particles of the diamond layers are made into the wire contact portion of the die.
摘要翻译：拉丝模具包括由气相合成金刚石制成的第一和第二多晶金刚石层。金刚石层的最好的金刚石颗粒被制成模具的导线接触部分。

12. 发明授权

US4900628A Gaseous phase synthesized diamond and method for synthesizing same 失效
标题翻译：气相合成金刚石及其合成方法
公开(公告)号：US4900628A
公开(公告)日：1990-02-13
申请号：US76721
申请日：1987-07-22
申请人： Akihiko Ikegaya , Masaaki Tobioka
发明人： Akihiko Ikegaya , Masaaki Tobioka
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B29/04 , Y10T428/30
摘要： The present invention relates to gaseous phase synthesized diamond and a method of synthesizing the same. In order to obtain crystalline diamond having remarkably high completeness and hardly containing carbon having a construction other than that of diamond, raw material gases are thermally activated by a thermoelectron-radiating material heated at an extremely high temperature, the thermoelectron-radiating material being connected to a negative pole while a substrate to be coated is connected to a positive pole, by the use of a direct current power source, a plasma being formed between the thermoelectron-radiating material and the substrate by applying a direct current voltage, and a diamond film having an average particle size of 2 microns or less, compression residual stress and electric resistance of 10.sup.8 ohm.cm or more being formed on the substrate by using the activation by the thermoelectron-radiating material together with the activation by the formation of DC plasma.In addition, homogeneous diamond particles uniform in shape can be obtained by using this method.

13. 发明申请

US20110020082A1 JOINED PRODUCT 有权
标题翻译：加工产品
公开(公告)号：US20110020082A1
公开(公告)日：2011-01-27
申请号：US12922655
申请日：2009-03-27
申请人： Kimihiro Ozaki , Keizo Kobayashi , Hideki Moriguchi , Tomoyuki Ishida , Akihiko Ikegaya , Nobuyuki Kitagawa
发明人： Kimihiro Ozaki , Keizo Kobayashi , Hideki Moriguchi , Tomoyuki Ishida , Akihiko Ikegaya , Nobuyuki Kitagawa
IPC分类号： B23B27/18 , B32B15/00
CPC分类号： B23K1/19 , B22F7/064 , B23B2226/125 , B23B2226/315 , B23B2240/08 , B23K1/0004 , B23K11/16 , B23K11/3009 , B23K20/021 , B23K20/16 , B23K35/005 , B23K35/3033 , B23K35/3046 , B23K35/325 , B23K2101/20 , B23K2103/18 , C22C26/00 , C22C29/06 , C23C16/00 , Y10T407/26 , Y10T407/27 , Y10T428/30 , Y10T428/31678
摘要： There is provided a joined product suitable as a cutting tool that is fit for high-speed cutting, CVD coating process and the like, and does not cause a reduction in joint strength of a joining layer even if a high temperature exceeding a temperature at which a brazing filler forms the liquid phase is reached during cutting. Specifically, the joined product includes a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact or a diamond sintered compact serving as a second material to be joined. The first material to be joined and the second material to be joined are joined by a joining material that does not form a liquid phase at a temperature lower than 1000° C. and that is placed between the first material to be joined and the second material to be joined. The joining is performed by resistance heating and pressing at a pressure of 0.1 to 200 MPa.
摘要翻译：提供了适合作为高速切割，CVD涂覆工艺等的切削工具的接合产品，并且即使超过其中的温度的高温也不会导致接合层的接合强度降低钎焊填料在切割过程中达到液相。具体而言，接合体包括作为第一接合材料的硬质合金烧结体和作为第二接合材料的cBN烧结体或金刚石烧结体。要接合的第一材料和待接合的第二材料通过在低于1000℃的温度下不形成液相的接合材料接合，并且被放置在待接合的第一材料和第二材料之间加入。通过电阻加热和压力为0.1〜200MPa进行接合。

14. 发明授权

US07090914B2 Coated cutting tool 有权
标题翻译：涂层切割工具
公开(公告)号：US07090914B2
公开(公告)日：2006-08-15
申请号：US11138258
申请日：2005-05-27
申请人： Kazuo Yamagata , Akihiko Ikegaya
发明人： Kazuo Yamagata , Akihiko Ikegaya
IPC分类号： B32B9/00
CPC分类号： C23C30/005 , Y10T407/27 , Y10T428/24628 , Y10T428/24975 , Y10T428/265
摘要： A coated cutting tool with a hard coating layer formed on a substrate. The substrate comprises a binder phase and a hard phase. The coating layer comprises a smooth face having a surface roughness of 0.2 μm or less substantially at the blade-edge ridge and in a region which extends at least 200 μm from the rake face side boundary of the ridge toward the rake face side, and extends at least 50 μm from the flank side boundary of the ridge toward the flank side.
摘要翻译：一种在基底上形成有硬涂层的涂覆切割工具。基底包括粘结相和硬相。涂层包括基本上在叶片边缘处的表面粗糙度为0.2μm或更小的平滑表面，以及从脊部的前刀面侧边界向前刀面侧延伸至少200μm的区域，并且延伸从脊的侧面边界朝向侧面的至少50微米。

15. 发明授权

US06592726B1 Vacuum arc evaporation method, vacuum arc evaporation system, and rotary cutting tool 失效
标题翻译：真空电弧蒸发法，真空电弧蒸发系统和旋转切割工具
公开(公告)号：US06592726B1
公开(公告)日：2003-07-15
申请号：US09701020
申请日：2000-11-22
申请人： Yasuhisa Hashimoto , Kazuo Yamagata , Akihiko Ikegaya
发明人： Yasuhisa Hashimoto , Kazuo Yamagata , Akihiko Ikegaya
IPC分类号： C23C1432
CPC分类号： H01J37/32055 , C23C14/325
摘要： A vacuum arc coating process that can form a hard coating layer excellent in both bonding quality with the substrate and surface roughness, a coating machine for this process, and a revolving cutting tool produced by this process. Vacuum chamber 1 is provided with subchamber 3 that is less evacuatable than coating chamber 2. Arcing-type evaporation source 4 is placed in subchamber 3. A gas such as nitrogen gas is introduced into subchamber 3 from gas-introducing portion 6 when substrate 10 is cleaned before the deposition, so that the gas pressure is kept higher in subchamber 3 than in the vicinity of substrate 10. This condition suppresses the generation of molten particles when the cathode (the evaporating material) of arc evaporation source 4 is melted and ionized, without reducing the sputtering effect. A revolving cutting tool thus obtained has a small magnitude of surface roughness.
摘要翻译：可以形成与基板的粘合质量和表面粗糙度优异的硬涂层的真空电弧涂布工艺，该工艺的涂布机和通过该工艺生产的旋转切削工具。真空室1设置有比涂布室2更少可排气的下室3。将电弧型蒸发源4放置在子室3中。当衬底10是基底10时，气体如氮气被引入到气体导入部分6的子室3中在沉积之前清洁，使得气体压力在基板3中比在基板10附近保持较高。当电弧蒸发源4的阴极（蒸发材料）熔化并离子化时，该条件抑制熔融颗粒的产生，而不会降低溅射效应。由此获得的旋转切削工具具有小的表面粗糙度。

16. 发明授权

US06202769B1 Drilling stabilizer 有权
标题翻译：钻孔稳定器
公开(公告)号：US06202769B1
公开(公告)日：2001-03-20
申请号：US09321224
申请日：1999-05-27
申请人： Akihiko Ikegaya , Keiichi Tsuda
发明人： Akihiko Ikegaya , Keiichi Tsuda
IPC分类号： E21B1036
CPC分类号： E21B17/1078 , Y10T428/1209
摘要： A high-performance drilling stabilizer is provided that is high in both wear resistance and strength. Blades are bonded to a stabilizer body. The blade is split into at least two segments. The blade segments are bonded to the stabilizer body to form the blade. A laminate made of cemented carbide and having a laminate structure made up of at least two layers is bonded to the top of each of the blade segments. The laminate has a thickness of between 1 mm and 5 mm. The cobalt contents of the respective layers decrease stepwise from the innermost layer toward the outermost layer.
摘要翻译：提供了耐磨性和强度高的高性能钻井稳定器。叶片结合到稳定器体上。刀片分为至少两个部分。叶片段结合到稳定器本体以形成叶片。由硬质合金制成的具有由至少两层构成的层压结构的层压板粘合到每个叶片段的顶部。层压体的厚度为1mm至5mm。各层的钴含量从最内层向最外层逐步降低。

17. 发明授权

US5964942A Wafer and method of producing same 失效
标题翻译：晶圆及其制造方法
公开(公告)号：US5964942A
公开(公告)日：1999-10-12
申请号：US494719
申请日：1995-06-26
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Takashi Tsuno
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04
摘要： No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
摘要翻译：目前没有宽的大块金刚石晶圆。提出了宽金刚石涂层的晶片代替块状金刚石晶片。通过气相沉积方法将金刚石异质外延沉积在凸变形的非金刚石单晶衬底上。在早期的步骤中，向衬底施加负偏压。在Si衬底的情况下，通过提供低碳浓度的材料气体，首先在Si衬底上沉积β-SiC的中间层。然后提高碳浓度以制备金刚石膜。凸起变形的晶片粘附到具有能够倾斜到保持器的轴的保持器上。将晶片推到抛光机的转台上。通过将支架倾斜到轴上，可以完全抛光凸面金刚石晶片。产生了一个宽扭曲的金刚石镜面晶圆。可以通过光刻在金刚石镜晶片上形成细线图案。

18. 发明授权

US5947651A Indexable insert 失效
标题翻译：可转位插入
公开(公告)号：US5947651A
公开(公告)日：1999-09-07
申请号：US017713
申请日：1998-02-05
申请人： Daisuke Murakami , Norihide Kimura , Reizo Murakami , Nobuyuki Kitagawa , Akihiko Ikegaya
发明人： Daisuke Murakami , Norihide Kimura , Reizo Murakami , Nobuyuki Kitagawa , Akihiko Ikegaya
IPC分类号： B23B27/22 , B23B27/14
CPC分类号： B23B27/143 , Y10T407/235 , Y10T407/24 , Y10T407/245
摘要： An indexable insert with a chip breaker configured such that chips produced under various cutting conditions from rough cutting to finish cutting can be disposed of in an optimum way. Protrusions are provided in a chip breaker groove to extend from a central land toward the respective corners of the insert. Each protrusion has a breaker wall which is concave and curved such that chips produced always collide against the breaker wall at an angle of 10.degree.-40.degree. so that the chips are curled helically with a helix angle of 10.degree.-40.degree. and broken into small pieces reliably.
摘要翻译：具有断屑器的可转位刀片构造成使得可以以最佳方式处理从粗切削到精加工切削的各种切割条件下生产的切屑。突出部分设置在断屑槽中，以从中心区域向插入件的相应拐角延伸。每个突起具有凹陷和弯曲的破碎器壁，使得所产生的碎屑总是以10°-40°的角度与破碎器壁碰撞，使得碎片以10°-40°的螺旋角螺旋形卷曲，并被分解成小件可靠。

19. 发明授权

US5314570A Process and apparatus for the production of diamond 失效
标题翻译：用于生产钻石的工艺和设备
公开(公告)号：US5314570A
公开(公告)日：1994-05-24
申请号：US838726
申请日：1992-03-13
申请人： Akihiko Ikegaya , Naoji Fujimori
发明人： Akihiko Ikegaya , Naoji Fujimori
IPC分类号： C30B29/04 , C23C16/27 , C23C16/44 , C23C16/52 , C30B25/10 , C30B25/00
CPC分类号： C30B25/10 , C23C16/27 , C23C16/44 , C23C16/52 , C30B25/105
摘要： The present invention aims at improving a hot filament CVD method and apparatus capable of enlarging the diamond-forming area in relatively easy manner and utilizing effectively the capacity of a thermoelectron radiation material and provides a process and apparatus for producing diamond with excellent productivity as well as a compact size of apparatus, which can be applied to production on a commercial scale. The feature of the present invention consists in subjecting to decomposition, excitation and activation by a thermoelectron radiation material heated at a high temperature a raw material gas comprising at least one carbon source selected from the group consisting of hydrocarbons, hydrocarbons containing oxygens and/or nitrogens in the bonded groups, carbon oxides, halogenated hydrocarbons and solid carbon, hydrogen and optionally any one of inert gases of Group VIII elements, H.sub.2 O, O.sub.2 and F.sub.2 and depositing diamond on the surface of a substrate provided near the thermoelectron radiation material, characterized by surrounding the circumference of the thermoelectron radiation material by a cooling plate, providing a substrate to be deposited with diamond between the cooling plate and the thermoelectron radiation material with small gaps and controlling the surface temperature of the substrate facing the thermoelectron radiation material by the cooling plate and optionally a buffer material inserted between the cooling plate and the substrate, thereby depositing diamond.
摘要翻译： PCT No.PCT / JP91 / 00955 Sec。 371日期：1992年3月13日 102（e）1992年3月13日PCT PCT 1991年7月17日PCT公布。出版物WO92 / 01828 日本1992年6月2日。本发明旨在改进能够以相对容易的方式扩大金刚石成形区域并有效利用热电子辐射材料的能力的热丝CVD方法和装置，并提供用于生产钻石具有优异的生产率以及尺寸紧凑的装置，其可以以商业规模应用于生产。本发明的特征在于通过在高温下加热的热电子辐射材料进行分解，激发和活化，所述原料气体包括至少一种选自烃，含氧和/或氮的烃的碳源在结合基团中，碳氧化物，卤代烃和固体碳，氢和任选的VIII族元素，H 2 O，O 2和F 2的惰性气体中的任何一种，并在设置在热电子辐射材料附近的衬底的表面上沉积金刚石，其特征在于通过冷却板围绕热电子辐射材料的周边，提供在冷却板和具有小间隙的热电子辐射材料之间沉积金刚石的基底，并且通过冷却板控制面向热电子辐射材料的基板的表面温度和任选的缓冲材料插入冷却板和基板之间，由此沉积金刚石。

20. 发明授权

US5197651A Bonding tool 失效
标题翻译：连接工具
公开(公告)号：US5197651A
公开(公告)日：1993-03-30
申请号：US573062
申请日：1990-08-24
申请人： Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
发明人： Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
IPC分类号： C04B41/50 , C04B41/85
CPC分类号： C04B41/009 , C04B41/5002 , C04B41/85 , H01L24/75 , H01L2924/12033 , H01L2924/351
摘要： A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.

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