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11. 发明授权

US07507144B2 Substrate polishing apparatus 有权
标题翻译：基材抛光装置
公开(公告)号：US07507144B2
公开(公告)日：2009-03-24
申请号：US11727727
申请日：2007-03-28
申请人： Kazuto Hirokawa , Shunsuke Nakai , Shinrou Ohta , Yutaka Wada , Yoichi Kobayashi
发明人： Kazuto Hirokawa , Shunsuke Nakai , Shinrou Ohta , Yutaka Wada , Yoichi Kobayashi
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B49/12 , H01L21/30625
摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.
摘要翻译：基板抛光装置用于将诸如半导体晶片的基板的表面抛光到平面镜面。基板研磨装置具有安装在研磨台上的用于研磨半导体基板的研磨台和研磨垫。抛光垫在其中形成有通孔。基板研磨装置还具有发光和接收装置，用于通过形成在抛光垫中的通孔将测量光发射到半导体衬底并接收来自半导体衬底的反射光，以测量半导体衬底上的膜。发光和接收装置设置在抛光台中。衬底抛光装置包括用于将流体供应到测量光的路径的供给通道。供给通道具有可拆卸地安装在抛光台上的出口部分。衬底抛光装置还包括安装在抛光台上并当抛光垫附接到抛光台时装配到通孔中的保护盖。

12. 发明申请

US20060105679A1 Substrate polishing apparatus 有权
公开(公告)号：US20060105679A1
公开(公告)日：2006-05-18
申请号：US11274112
申请日：2005-11-16
申请人： Kazuto Hirokawa , Shunsuke Nakai , Shinrou Ohta , Yutaka Wada , Yoichi Kobayashi
发明人： Kazuto Hirokawa , Shunsuke Nakai , Shinrou Ohta , Yutaka Wada , Yoichi Kobayashi
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B49/12 , H01L21/30625
摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

13. 发明授权

US07547242B2 Substrate polishing apparatus 有权
标题翻译：基材抛光装置
公开(公告)号：US07547242B2
公开(公告)日：2009-06-16
申请号：US10558257
申请日：2004-05-19
申请人： Kazuto Hirokawa , Yoichi Kobayashi , Shunsuke Nakai , Shinrou Ohta , Yasuo Tsukuda
发明人： Kazuto Hirokawa , Yoichi Kobayashi , Shunsuke Nakai , Shinrou Ohta , Yasuo Tsukuda
IPC分类号： B24B49/00 , B24B29/00
CPC分类号： B24B37/013 , B24B37/205 , B24B49/08 , B24B49/12 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： A substrate polishing apparatus polishes a substrate to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed, a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate, a fluid supply passage for supplying a measurement fluid, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the measurement fluid to the fluid chamber.
摘要翻译：基板研磨装置将基板抛光成平面镜面。基板研磨装置具有：被加压基板的研磨台，发光和受光装置，用于将来自研磨台的测量光发射到基板，并接收来自基板的反射光，以测量基板上的膜用于将测量光和反射光通过的测量流体供应到设置在抛光台的发光和光接收位置处的流体室的流体供给通道和用于控制的流体供应控制装置将测量流体供应到流体室。

14. 发明申请

US20090096446A1 Polishing monitoring method, polishing apparatus and monitoring apparatus 有权
标题翻译：抛光监测方法，抛光装置和监测装置
公开(公告)号：US20090096446A1
公开(公告)日：2009-04-16
申请号：US12285674
申请日：2008-10-10
申请人： Taro Takahashi , Yoichi Kobayashi , Shinrou Ohta , Akihiko Ogawa
发明人： Taro Takahashi , Yoichi Kobayashi , Shinrou Ohta , Akihiko Ogawa
IPC分类号： G01B7/06
CPC分类号： G01B7/105
摘要： The present invention provides a method for monitoring a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor comprises two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination.
摘要翻译：本发明提供一种用于使用涡流传感器监测与抛光垫的抛光表面滑动接触的导电膜的厚度变化的方法。涡电流传感器的输出信号包括对应于包括涡流传感器的线圈的电路的阻抗的电阻分量和电抗分量的两个信号。该方法包括当涡流传感器面向导电膜时获取涡流传感器的输出信号，将两个信号定义为坐标系上的坐标，重复获取输出信号和定义坐标，确定由坐标系上的至少三组坐标指定的圆弧的曲率中心，确定连接曲率中心的直线和最小三个坐标系中的最近一个的线的倾斜角度，通过监测倾斜角度的变化来确定导电膜的厚度。

15. 发明申请

US20070042679A1 Substrate polishing apparatus 有权
标题翻译：基材抛光装置
公开(公告)号：US20070042679A1
公开(公告)日：2007-02-22
申请号：US10558257
申请日：2004-05-19
申请人： Kazuto Hirokawa , Yoichi Kobayashi , Shunsuke Nakai , Shinrou Ohta , Yasuo Tsukuda
发明人： Kazuto Hirokawa , Yoichi Kobayashi , Shunsuke Nakai , Shinrou Ohta , Yasuo Tsukuda
IPC分类号： B24B49/00 , B24B29/00
CPC分类号： B24B37/013 , B24B37/205 , B24B49/08 , B24B49/12 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： A substrate polishing apparatus (10) polishes a substrate (20) to a flat mirror finish. The substrate polishing apparatus (10) has a polishing table (12) against which a substrate (20) is pressed, a light-emitting and light-receiving device (24) to emit measurement light from the polishing table (12) to the substrate (20) and to receive reflected light from the substrate (20) for measuring a film on the substrate (20), a fluid supply passage (42) for supplying a measurement fluid, through which the measurement light and the reflected light pass, to a fluid chamber (68) provided at a light-emitting and light-receiving position of the polishing table (12), and a fluid supply control device (56, 58) for controlling supply of the measurement fluid to the fluid chamber (68).
摘要翻译：基板研磨装置（10）将基板（20）抛光成平面镜面。基板研磨装置（10）具有：被加压基板（20）的研磨台（12），从研磨台（12）向基板发射测定光的发光和受光装置（24）（20）接收来自基板（20）的反射光，用于测量基板（20）上的薄膜;流体供给通道（42），用于将测量光和反射光通过的测量流体通过，设置在所述研磨台（12）的发光和受光位置处的流体室（68）和用于控制向所述流体室（68）供给所述测量流体的流体供应控制装置（56,58）。

16. 发明授权

US08078419B2 Polishing monitoring method and polishing apparatus 有权
标题翻译：抛光监测方法和抛光装置
公开(公告)号：US08078419B2
公开(公告)日：2011-12-13
申请号：US12285604
申请日：2008-10-09
申请人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
发明人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
IPC分类号： G06F19/00 , B24B49/00 , G01B7/06 , G01B5/02 , G01R19/00 , G01C17/38
CPC分类号： G01B7/105 , B24B37/042 , B24B49/105
摘要： A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.
摘要翻译：一种方法使用涡流传感器监测抛光过程中膜厚度的变化。该方法包括在修整抛光垫期间或在更换抛光垫期间获取涡流传感器的输出信号作为衬底的水抛光期间的校正信号值，或者在抛光垫的更换期间，从校正之间的差计算校正量信号值和预定的校正基准值，通过在研磨具有导电膜的基板时从涡电流传感器的输出信号中减去校正量，并且在抛光期间监测导电膜的厚度变化来计算实际测量信号值通过监视实际测量信号值的变化。

17. 发明申请

US20090104847A1 Polishing monitoring method and polishing apparatus 有权
标题翻译：抛光监测方法和抛光装置
公开(公告)号：US20090104847A1
公开(公告)日：2009-04-23
申请号：US12285604
申请日：2008-10-09
申请人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
发明人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
IPC分类号： B24B51/00
CPC分类号： G01B7/105 , B24B37/042 , B24B49/105
摘要： The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.
摘要翻译：本发明提供一种使用涡流传感器来监测在抛光期间膜厚变化的方法。该方法包括在修整抛光垫期间或在更换抛光垫期间获取涡流传感器的输出信号作为衬底的水抛光期间的校正信号值，或者在抛光垫的更换期间，从校正之间的差计算校正量信号值和预定的校正基准值，通过在研磨具有导电膜的基板时从涡电流传感器的输出信号中减去校正量，并且在抛光期间监测导电膜的厚度变化来计算实际测量信号值通过监视实际测量信号值的变化。

18. 发明申请

US20070173177A1 Substrate polishing apparatus 有权
公开(公告)号：US20070173177A1
公开(公告)日：2007-07-26
申请号：US11727727
申请日：2007-03-28
申请人： Kazuto Hirokawa , Shunsuke Nakai , Shinrou Ohta , Yutaka Wada , Yoichi Kobayashi
发明人： Kazuto Hirokawa , Shunsuke Nakai , Shinrou Ohta , Yutaka Wada , Yoichi Kobayashi
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B49/12 , H01L21/30625
摘要： A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table. The substrate polishing apparatus also includes a protection cover mounted on the polishing table and fitted into the through hole when the polishing pad is attached to the polishing table.

19. 发明申请

US20100015889A1 Processing end point detection method, polishing method,and polishing apparatus 有权
标题翻译：处理终点检测方法，抛光方法和抛光装置
公开(公告)号：US20100015889A1
公开(公告)日：2010-01-21
申请号：US12311560
申请日：2007-10-05
申请人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
发明人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
IPC分类号： B24B49/04 , B24B49/12 , B24B37/04
CPC分类号： B24B49/04 , B24B37/013 , B24B49/12 , B24B49/16 , B24D7/12 , G01B11/0675 , G01N21/55 , G01N21/9501 , G05B19/406 , G05B19/4065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
摘要翻译：本发明涉及通过计算工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）的处理终点检测方法，例如底物。该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值并且通过在工件的加工期间检测特征点来检测工件的加工终点。

20. 发明授权

US08554356B2 Processing end point detection method, polishing method, and polishing apparatus 有权
标题翻译：处理终点检测方法，抛光方法和抛光装置
公开(公告)号：US08554356B2
公开(公告)日：2013-10-08
申请号：US12311560
申请日：2007-10-05
申请人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
发明人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
IPC分类号： G06F19/00 , G01B11/00 , B24B49/00 , B24B51/00 , G05B19/406 , G05B19/4065 , G01B11/06 , B24B49/16 , B24B49/12
CPC分类号： B24B49/04 , B24B37/013 , B24B49/12 , B24B49/16 , B24D7/12 , G01B11/0675 , G01N21/55 , G01N21/9501 , G05B19/406 , G05B19/4065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
摘要翻译：处理终点检测方法通过计算诸如基板的工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）。该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值并且通过在工件的加工期间检测特征点来检测工件的加工终点。

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