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    • 11. 发明申请
    • Wafer processing method and laser processing apparatus
    • 晶圆加工方法和激光加工装置
    • US20080200012A1
    • 2008-08-21
    • US12068459
    • 2008-02-06
    • Ryugo Oba
    • Ryugo Oba
    • H01L21/00
    • H01L21/67132B23K26/03B23K26/032B23K26/40B23K2103/50H01L21/78H01L22/12
    • In a wafer processing method for penetrating a wafer by use of a laser processing apparatus including a chuck table for holding the wafer, laser beam irradiation means for irradiating the wafer held on the chuck table with a laser beam, and imaging means for imaging the wafer held on the chuck table, the chuck table includes a chuck table main body, a holding member disposed on an upper surface of the chuck table main body and having a holding surface for holding an entire surface of the wafer, the holding member comprising a transparent or translucent member, and a light emitting body disposed laterally of a side of the holding member opposite to the holding surface. The wafer processing method comprises irradiating a predetermined processing region of the wafer held on the chuck table with the laser beam to perform the penetration in a predetermined manner, then lighting the light emitting body, with the wafer being held on the chuck table, imaging the processing region by the imaging means, and determining acceptance or rejection of the penetration based on whether or not light has passed through the processing region.
    • 在通过使用包括用于保持晶片的卡盘台的激光加工装置贯穿晶片的晶片处理方法中,用激光束照射保持在卡盘台上的晶片的激光束照射装置,以及用于对晶片进行成像的成像装置 卡盘台包括卡盘台主体,设置在卡盘台主体的上表面上并具有用于保持晶片整个表面的保持表面的保持件,保持件包括透明的 或半透明构件,以及发光体,其布置在与保持表面相对的保持构件的侧面的侧面。 晶片处理方法包括用激光束照射保持在卡盘台上的晶片的预定处理区域,以预定方式进行穿透,然后点亮发光体,晶片保持在卡盘台上,对 通过成像装置处理区域,并且基于光是否通过处理区域来确定穿透的接受或拒绝。
    • 12. 发明授权
    • Method for laser processing of wafer
    • 晶圆激光加工方法
    • US07396780B2
    • 2008-07-08
    • US11261600
    • 2005-10-31
    • Hitoshi HoshinoRyugo ObaKenji FurutaNoburu TakedaNobuyasu Kitahara
    • Hitoshi HoshinoRyugo ObaKenji FurutaNoburu TakedaNobuyasu Kitahara
    • H01L21/324
    • H01L21/67092B23K26/0853B23K26/702
    • A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
    • 一种利用激光束处理机进行激光加工的方法,所述激光束处理机包括用于保持晶片的卡盘台,激光束施加装置,用于将激光束施加到保持在卡盘台上的晶片上,以及加工进给装置 用于将夹盘和激光束施加装置相对于彼此进行加工,包括以下步骤:将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤,用于保持 晶片放在卡盘台上的保护带上,以及激光束施加步骤,用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上, 馈送装置,其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。
    • 13. 发明申请
    • Method for laser processing of wafer
    • 晶圆激光加工方法
    • US20060094260A1
    • 2006-05-04
    • US11261600
    • 2005-10-31
    • Hitoshi HoshinoRyugo ObaKenji FurutaNoburu TakedaNobuyasu Kitahara
    • Hitoshi HoshinoRyugo ObaKenji FurutaNoburu TakedaNobuyasu Kitahara
    • H01L21/324
    • H01L21/67092B23K26/0853B23K26/702
    • A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
    • 一种利用激光束处理机进行激光加工的方法,所述激光束处理机包括用于保持晶片的卡盘台,激光束施加装置,用于将激光束施加到保持在卡盘台上的晶片上,以及加工进给装置 用于将夹盘和激光束施加装置相对于彼此进行加工,包括以下步骤:将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤,用于保持 晶片放在卡盘台上的保护带上,以及激光束施加步骤,用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上, 馈送装置,其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。
    • 14. 发明授权
    • Wafer processing method
    • 晶圆加工方法
    • US07772092B2
    • 2010-08-10
    • US12314997
    • 2008-12-19
    • Kentaro IizukaHirokazu MatsumotoRyugo Oba
    • Kentaro IizukaHirokazu MatsumotoRyugo Oba
    • H01L21/268
    • H01L21/67092B23K26/0853B23K26/364B23K26/40B23K2103/172B23K2103/50H01L21/78
    • A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a dividing groove in the laminate and the substrate along an intermediate portion between the first blocking groove and the second blocking groove formed in the street of the wafer by activating second laser beam application means.
    • 一种处理具有多个器件的晶片的方法,所述晶片具有由基板前表面上的绝缘膜和功能膜构成的层叠体,沿着用于切割所述多个器件的街道,所述方法包括:第一阻挡槽 形成步骤,用于形成第一阻挡槽,用于在保持在卡盘台上的晶片的街道的宽度方向上沿着处理进给方向的第一方向移动卡盘台,沿着处理进给方向分割层压体, 第一激光束施加装置; 以及第二阻挡槽和分隔槽形成步骤,用于形成第二阻挡槽,该第二阻挡槽通过移动卡盘台,在已经经历了第一阻挡槽形成步骤的晶片的街道的宽度方向上的另一侧部分中分层叠层 沿着处理供给方向的第二方向,同时激活第一激光束施加装置,并且同时沿着形成在第一阻挡槽和第二阻挡槽之间的中间部分的层叠体和基板中形成分隔槽 通过激活第二激光束施加装置的晶片的街道。
    • 15. 发明申请
    • LASER BEAM MACHINING APPARATUS
    • 激光加工设备
    • US20080296275A1
    • 2008-12-04
    • US12110965
    • 2008-04-28
    • Ryugo ObaHiroshi Morikazu
    • Ryugo ObaHiroshi Morikazu
    • B23K26/067B23K26/06
    • B23K26/0736B23K26/0604B23K26/0613B23K26/067B23K26/0676B23K26/0853
    • A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens disposed between the beam splitter and the second quarter-wave plate.
    • 一种激光束加工设备,包括激光束照射单元,所述激光束照射单元包括:用于振荡激光束的激光束振荡器; 由激光束振荡器振荡的激光束通过该分束器被分成第一激光束和第二激光束; 设置在激光束振荡器和分束器之间的旋转半波片; 聚光透镜,设置在第一光路中,用于引导由分束器分裂的第一激光束; 第一反射镜,设置在第二光路中,用于引导由分束器分裂的第二激光束; 设置在分束器和第一反射镜之间的第一四分之一波长板; 第二反射镜,设置在第三光路中,用于将通过第二光路返回到分束器的第二激光束分离; 设置在分束器和第二反射镜之间的第二四分之一波片; 以及设置在分束器和第二四分之一波片之间的柱面透镜。
    • 19. 发明授权
    • Laser processing beam machine
    • 激光加工梁机
    • US07968821B2
    • 2011-06-28
    • US11727753
    • 2007-03-28
    • Ryugo Oba
    • Ryugo Oba
    • B23K26/06
    • B23K26/0853B23K26/073
    • A laser processing beam machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the laser beam application means comprises a laser beam oscillation means for oscillating a laser beam and a condenser for converging the laser beam oscillated by the laser beam oscillation means; and the condenser comprises a condenser lens opposed to the workpiece held on the chuck table, a cylindrical lens arranged on the upstream side in the laser beam application direction of the condenser lens, and an interval adjustment mechanism for adjusting the interval between the condenser lens and the cylindrical lens.
    • 一种激光加工光束机,包括用于保持工件的卡盘台,用于将激光束施加到保持在卡盘台上的工件的激光束施加装置,以及用于移动卡盘台和激光束施加装置的加工进给装置 相对于彼此,其中所述激光束施加装置包括用于振荡激光束的激光束振荡装置和用于会聚由所述激光束振荡装置振荡的激光束的聚光器; 并且所述冷凝器包括与保持在所述卡盘台上的所述工件相对的聚光透镜,配置在所述聚光透镜的激光束施加方向上的上游侧的柱面透镜,以及用于调整所述聚光透镜与所述聚光透镜之间的间隔的间隔调整机构, 柱面透镜。
    • 20. 发明授权
    • Wafer processing method and laser processing apparatus
    • 晶圆加工方法和激光加工装置
    • US07655541B2
    • 2010-02-02
    • US12068459
    • 2008-02-06
    • Ryugo Oba
    • Ryugo Oba
    • H01L21/78H01L21/30H01L21/46H01L21/50H01L21/48H01L21/44H01L21/768H01L23/544
    • H01L21/67132B23K26/03B23K26/032B23K26/40B23K2103/50H01L21/78H01L22/12
    • In a wafer processing method for penetrating a wafer by use of a laser processing apparatus including a chuck table for holding the wafer, laser beam irradiation means for irradiating the wafer held on the chuck table with a laser beam, and imaging means for imaging the wafer held on the chuck table, the chuck table includes a chuck table main body, a holding member disposed on an upper surface of the chuck table main body and having a holding surface for holding an entire surface of the wafer, the holding member comprising a transparent or translucent member, and a light emitting body disposed laterally of a side of the holding member opposite to the holding surface. The wafer processing method comprises irradiating a predetermined processing region of the wafer held on the chuck table with the laser beam to perform the penetration in a predetermined manner, then lighting the light emitting body, with the wafer being held on the chuck table, imaging the processing region by the imaging means, and determining acceptance or rejection of the penetration based on whether or not light has passed through the processing region.
    • 在通过使用包括用于保持晶片的卡盘台的激光加工装置贯穿晶片的晶片处理方法中,用激光束照射保持在卡盘台上的晶片的激光束照射装置,以及用于对晶片进行成像的成像装置 卡盘台包括卡盘台主体,设置在卡盘台主体的上表面上并具有用于保持晶片整个表面的保持表面的保持件,保持件包括透明的 或半透明构件,以及发光体,其布置在与保持表面相对的保持构件的侧面的侧面。 晶片处理方法包括用激光束照射保持在卡盘台上的晶片的预定处理区域,以预定方式进行穿透,然后点亮发光体,晶片保持在卡盘台上,对 通过成像装置处理区域,并且基于光是否通过处理区域来确定穿透的接受或拒绝。