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11. 发明授权

US08649532B2 Electronic volume circuit 失效
标题翻译：电子音量电路
公开(公告)号：US08649532B2
公开(公告)日：2014-02-11
申请号：US12850990
申请日：2010-08-05
申请人： Koichiro Adachi
发明人： Koichiro Adachi
IPC分类号： H03G3/00 , H03F99/00
CPC分类号： H03F3/45475 , H03F3/187 , H03F2200/03 , H03F2200/78 , H03F2203/45512 , H03F2203/45526 , H03F2203/45528 , H03F2203/45534 , H03F2203/45536 , H03F2203/45544 , H03F2203/45551 , H03F2203/45616 , H03G3/001 , H03G5/025
摘要： An electronic volume circuit includes a first signal processing circuit and a second signal processing circuit that are cascaded together. The first signal processing circuit includes a first operational amplifier including an input terminal and an output terminal, one or more input resistors inputting one or more signals to the input terminal of the first operational amplifier, and a feedback resistor connected between the input terminal and the output terminal of the first operational amplifier. The second signal processing circuit includes a second operational amplifier including an input terminal and an output terminal, an input capacitor inputting a signal output from the first operational amplifier to the input terminal of the second operational amplifier, and a resistor and a capacitor connected in parallel between the input terminal and the output terminal of the second operational amplifier.
摘要翻译：电子体积电路包括级联在一起的第一信号处理电路和第二信号处理电路。第一信号处理电路包括：第一运算放大器，包括输入端和输出端，将一个或多个输入电阻输入到第一运算放大器的输入端的一个或多个输入电阻，以及连接在输入端与第第一运算放大器的输出端。第二信号处理电路包括：第二运算放大器，包括输入端子和输出端子;输入电容器，将从第一运算放大器输出的信号输入到第二运算放大器的输入端子;以及电阻器和并联连接的电容器在第二运算放大器的输入端和输出端之间。

12. 发明授权

US5630904A Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent 失效
标题翻译：用于从半导体衬底去除干蚀刻和光致抗蚀剂残留物的剥离和清洁剂，以及使用剥离和清洁剂形成线图案的方法
公开(公告)号：US5630904A
公开(公告)日：1997-05-20
申请号：US410726
申请日：1995-03-27
申请人： Tetsuo Aoyama , Rieko Nakano , Akira Ishihama , Koichiro Adachi
发明人： Tetsuo Aoyama , Rieko Nakano , Akira Ishihama , Koichiro Adachi
IPC分类号： G03F7/42 , H01L21/02 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/3213 , C09K13/00
CPC分类号： H01L21/02071 , G03F7/422 , G03F7/425 , H01L21/02063 , H01L21/32138 , Y10S438/963
摘要： Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.
摘要翻译：用于去除干蚀刻光刻胶残渣的剥离和清洁剂，以及使用剥离和清洁剂形成铝基线图案的方法。剥离剂和清洁剂含有（a）5-50重量％的由式[R1] m [COONHp（R2）q] n表示的有机碳铵铵盐或胺羧酸盐，其中R 1是氢，或具有1至18个碳原子的烷基或芳基; R2是氢或具有1至4个碳原子的烷基; m和n独立地为1至4的整数，p为1至4的整数，q为1至3的整数，p + q = 4和（b）0.5至15重量％的氟复合。本发明的方法有利地应用于用剥离和清洁剂处理干蚀刻的半导体衬底。半导体衬底包括其上具有含有铝的导电层的半导体晶片。通过图案化的光致抗蚀剂掩模对导电层进行干蚀刻，以形成具有蚀刻侧壁的布线体。干蚀刻在侧壁上形成侧壁保护膜。根据本发明的方法，侧壁保护膜和其它抗蚀剂残留物完全释放而不会腐蚀布线体。

13. 发明授权

US5498602A Oligosaccharide aromatic glycoside and sulfate thereof 失效
标题翻译：寡糖芳香糖苷及其硫酸盐
公开(公告)号：US5498602A
公开(公告)日：1996-03-12
申请号：US944077
申请日：1992-09-11
申请人： Tadao Shoji , Nahoko Takahashi , Naoya Ikushima , Toshiyuki Uryu , Takashi Yoshida , Naoki Yamamoto , Hideki Nakashima , Kaname Katsuraya , Koichiro Adachi , Fusayo Kataoka
发明人： Tadao Shoji , Nahoko Takahashi , Naoya Ikushima , Toshiyuki Uryu , Takashi Yoshida , Naoki Yamamoto , Hideki Nakashima , Kaname Katsuraya , Koichiro Adachi , Fusayo Kataoka
IPC分类号： A61K31/70 , A61K31/7028 , A61K31/7034 , A61P31/12 , A61P31/18 , C07H15/203 , C08B37/00 , C07G3/00 , C07H11/00
CPC分类号： C07H15/203 , C08B37/006
摘要： Oligosaccharide aromatic glycoside sulfates and physiologically acceptable salts thereof, are disclosed. Further, antiviral agents having these sulfate compounds as the active components, and particularly an antiviral agent, wherein the virus is one which causes AIDS (Acquired Immune Deficiency Syndrome), are disclosed. The active components or the glycoside sulfates, and the salts thereof, are characterized by an oligosaccharide aromatic glycoside sulfate in which the hydrogen of the position-1 hydroxyl group of the terminal sugar of an oligosaccharide is substituted with a specified formula having an alkyl group consisting of 1 to 18 carbons, an oxygen or no oxygen, and an allylene group. The number of constituent monosaccharides in the oligosaccharide portion is preferably within a range of 2 to 20. Further, 10% or more of the remaining hydroxyl groups of the sugar subunits are subjected to sulfated esterification. In addition the antiviral agent exhibits low toxicity and is useful in the treatment of AIDS. Furthermore, an oligosaccharide is also disclosed as described above with the exception that it is the hydrogen atom of the position 1 hydrogen group at the terminal sugar residue which is substituted with the specified formula, also described above. However, in addition the remaining hydroxyl groups of the sugar portion of this oligosaccharide are protected by acyl groups or are present in an unprotected form. Also disclosed is a method for the production of an oligosaccharide aromatic glycoside sulfate synthesized by sulfation using a sulfating agent.
摘要翻译：公开了寡糖芳香糖苷硫酸盐及其生理上可接受的盐。此外，公开了具有这些硫酸盐化合物作为活性成分的抗病毒剂，特别是其中病毒是引起AIDS（获得性免疫缺陷综合征）的抗病毒剂。活性成分或糖苷硫酸盐及其盐的特征在于寡糖芳香糖苷硫酸盐，其中寡糖末端糖的位置1羟基的氢被具有烷基的特定式所取代， 1至18个碳，氧或无氧，以及烯丙基。寡糖部分中的构成单糖的数量优选在2〜20的范围内。此外，将糖亚基的剩余羟基的10％以上进行硫酸化酯化。此外，抗病毒剂的毒性低，可用于治疗艾滋病。此外，还公开了如上所述的寡糖，不同之处在于它是上述也被指定式取代的末端糖残基上的1位氢原子的氢原子。然而，此外，该寡糖的糖部分的剩余羟基由酰基保护或以未保护的形式存在。还公开了通过使用硫酸化剂硫酸化合成的寡糖芳香族糖苷硫酸盐的制造方法。

14. 发明授权

US08193862B2 Operational amplifier 失效
标题翻译：运算放大器
公开(公告)号：US08193862B2
公开(公告)日：2012-06-05
申请号：US12872239
申请日：2010-08-31
申请人： Koichiro Adachi
发明人： Koichiro Adachi
IPC分类号： H03F3/45
CPC分类号： H03F3/3022 , H03F3/45094 , H03F2200/405 , H03F2200/516 , H03F2200/555
摘要： A multi-stage amplification type class-AB operational amplifier disclosed includes an amplification stage having plural amplification sections formed in multiple stages, and a class-AB output stage having a bias section and an output section, in which an input signal input to the amplification stage is sequentially amplified by the plural amplification sections, and further amplified by the bias section and the output section of the class-AB output stage. A positive supply voltage applied to the amplification stage is different from a positive supply voltage applied to the class-AB output stage, and a negative supply voltage applied to the amplification stage is different from a negative supply voltage applied to the class-AB output stage.
摘要翻译：所公开的多级放大型AB类运算放大器包括具有多级放大部分的多级放大级和具有偏置部分和输出部分的AB类输出级，其中输入到放大器的输入信号通过多个放大部分顺序地放大级，并且由AB类输出级的偏置部分和输出部分进一步放大。施加到放大级的正电源电压与施加到AB类输出级的正电源电压不同，施加到放大级的负电源电压与施加到AB类输出级的负电源电压不同。

15. 发明授权

US07636378B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US07636378B2
公开(公告)日：2009-12-22
申请号：US12028127
申请日：2008-02-08
申请人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
发明人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译：在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题一部分。为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。

16. 发明授权

US07583714B2 Vertical cavity surface emitting semiconductor laser device 有权
标题翻译：垂直腔表面发射半导体激光器件
公开(公告)号：US07583714B2
公开(公告)日：2009-09-01
申请号：US11679349
申请日：2007-02-27
申请人： Kouji Nakahara , Koichiro Adachi , Takashi Shiota , Tomonobu Tsuchiya , Kazunori Shinoda
发明人： Kouji Nakahara , Koichiro Adachi , Takashi Shiota , Tomonobu Tsuchiya , Kazunori Shinoda
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/305 , H01S5/3054 , H01S5/3095 , H01S5/34306
摘要： The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
摘要翻译：其中InP层和InGaAlAs层交替层压的DBR层的反射率特性与InGaAlAs层的光吸收特性之间的关系是垂直腔表面发射激光器的折衷 InP衬底。本发明应用半导体DBR层，其中InP层和InGaAlAs-MQW（多量子阱）层被交替层叠，以便解决上述折衷。 InGaAlAs-MQW层由InGaAlAs阱和阻挡层组成。 InP层被均匀地掺杂，并且InGaAlAs-MQW层具有其至少一部分被掺杂的结构。

17. 发明申请

US20080266638A1 SEMICONDUCTOR LASER AND OPTICAL MODULE 有权
标题翻译：半导体激光和光学模块
公开(公告)号：US20080266638A1
公开(公告)日：2008-10-30
申请号：US11831986
申请日：2007-08-01
申请人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
发明人： Kazunori Shinoda , Koichiro Adachi , Hideo Arimoto
IPC分类号： G02B26/00 , H01S5/02
CPC分类号： G02B6/4246 , B82Y20/00 , G02B6/4214 , H01S5/005 , H01S5/02212 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0267 , H01S5/028 , H01S5/1085 , H01S5/12 , H01S5/18 , H01S5/2224 , H01S5/2275 , H01S5/34306
摘要： In a horizontal cavity surface emitted laser, there is provided a device structure that is capable of obtaining a circular narrow-divergence emitted beam that is high in the optical coupling efficiency with a fiber. As a first means, there is provided a horizontal cavity surface emitting laser having a structure in which the plane mirror that is inclined by 45° and the bottom lens of the oval configuration are integrally structured. As a second means, there is provided a horizontal cavity surface emitting laser in which the mirror having the columnar front surface configuration inclined by 45° and the bottom lens of the columnar front surface configuration are integrally structured. Since the horizontal component and the vertical component of the laser beam can be shaped, independently, through the above means. As a result, it is possible to obtain the circular narrow-divergence emitted beam.
摘要翻译：在水平腔表面发射激光器中，提供了一种能够获得与光纤的光耦合效率高的圆形窄发散射束的器件结构。作为第一手段，提供了一种水平腔表面发射激光器，其具有倾斜45°的平面镜和椭圆形的底部透镜一体构造的结构。作为第二装置，提供了一种水平腔表面发射激光器，其中具有倾斜45°的柱状前表面结构的反射镜和柱状前表面构造的底部透镜是一体构造的。由于可以通过上述方式独立地对激光束的水平分量和垂直分量进行成形。结果，可以获得圆形窄发散光束。

18. 发明授权

US5304323A Liquid crystal devices and process for producing the same 失效
标题翻译：液晶装置及其制造方法
公开(公告)号：US5304323A
公开(公告)日：1994-04-19
申请号：US984279
申请日：1992-12-01
申请人： Yoshi Arai , Toru Fujisawa , Kiyohumi Takeuchi , Haruyoshi Takatsu , Koichiro Adachi , Hiroshi Ogawa , Kazunori Maruyama
发明人： Yoshi Arai , Toru Fujisawa , Kiyohumi Takeuchi , Haruyoshi Takatsu , Koichiro Adachi , Hiroshi Ogawa , Kazunori Maruyama
IPC分类号： C09K19/54 , G02F1/1334 , C09K19/52 , G02F1/13
CPC分类号： C09K19/542 , G02F1/1334 , G02F2001/13345
摘要： A liquid crystal device comprising a pair of substrate, at least one of them being transparent, and a light-control layer supported therebetween, wherein said light-control layer comprises a liquid crystal material showing positive dielectric anisotropy and a transparent solid substance, said liquid crystal material forming a continuous phase, and said transparent solid substance existing in said continuous phase in the form of dispersed particles or a three-dimensional network. The device exhibits a clear threshold voltage, a high fast response time and a highly contrast display with a low applied voltage.
摘要翻译：一种液晶装置，包括一对基板，其中至少一个是透明的，并且支撑在其间的光控层，其中所述光控层包括显示正介电各向异性的液晶材料和透明固体物质，所述液体形成连续相的晶体材料，所述透明固体物质以分散颗粒或三维网络的形式存在于所述连续相中。该器件具有清晰的阈值电压，高的快速响应时间和低施加电压的高对比度显示。

19. 发明申请

US20110063036A1 OPERATIONAL AMPLIFIER 失效
标题翻译：操作放大器
公开(公告)号：US20110063036A1
公开(公告)日：2011-03-17
申请号：US12872239
申请日：2010-08-31
申请人： Koichiro Adachi
发明人： Koichiro Adachi
IPC分类号： H03F3/04
CPC分类号： H03F3/3022 , H03F3/45094 , H03F2200/405 , H03F2200/516 , H03F2200/555
摘要： A multi-stage amplification type class-AB operational amplifier disclosed includes an amplification stage having plural amplification sections formed in multiple stages, and a class-AB output stage having a bias section and an output section, in which an input signal input to the amplification stage is sequentially amplified by the plural amplification sections, and further amplified by the bias section and the output section of the class-AB output stage. A positive supply voltage applied to the amplification stage is different from a positive supply voltage applied to the class-AB output stage, and a negative supply voltage applied to the amplification stage is different from a negative supply voltage applied to the class-AB output stage.
摘要翻译：所公开的多级放大型AB类运算放大器包括具有多级放大部分的多级放大级和具有偏置部分和输出部分的AB类输出级，其中输入到放大器的输入信号通过多个放大部分顺序地放大级，并且由AB类输出级的偏置部分和输出部分进一步放大。施加到放大级的正电源电压与施加到AB类输出级的正电源电压不同，施加到放大级的负电源电压与施加到AB类输出级的负电源电压不同。

20. 发明授权

US07705679B2 Operational amplifier 失效
标题翻译：运算放大器
公开(公告)号：US07705679B2
公开(公告)日：2010-04-27
申请号：US12251483
申请日：2008-10-15
申请人： Koichiro Adachi
发明人： Koichiro Adachi
IPC分类号： H03F3/45
CPC分类号： H03F3/45183 , H03F1/523 , H03F3/3028 , H03F2200/513 , H03F2203/45396 , H03F2203/45616 , H03F2203/45726
摘要： An operational amplifier includes a first differential stage, a second differential stage, a second cascade amplifier stage, an output unit, a first switching control unit and a second switching control unit. When an external signal for stopping operation is input, the first switching control unit shuts off a connection between a non-inverting input terminal and a control electrode of one input transistor at each first and second differential stage, and shuts off a connection between an inverting input terminal and a control electrode of another input transistor at the first and second differential stages, and the second switching control unit connects the negative-side power supply voltage terminal to each control gate of the input transistors at the first and second differential stages and to the substrate gates of the input transistors at the first differential stage.
摘要翻译：运算放大器包括第一差分级，第二差分级，第二级联放大级，输出单元，第一开关控制单元和第二开关控制单元。当输入用于停止操作的外部信号时，第一开关控制单元在每个第一和第二差分级处切断一个输入晶体管的非反相输入端子和控制电极之间的连接，并且切断反相输入端子和第一差分级和第二差分级的另一输入晶体管的控制电极，第二开关控制单元将负侧电源电压端子连接到第一和第二差分级的输入晶体管的每个控制栅极，并且在第一差分级的输入晶体管的衬底栅极。

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