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    • 14. 发明授权
    • System and method for sample charge control
    • 样品充电控制系统和方法
    • US07335879B2
    • 2008-02-26
    • US11203674
    • 2005-08-12
    • Zhong-Wei Chen
    • Zhong-Wei Chen
    • G01N23/00
    • H01J37/026G01R31/307H01J2237/0044H01J2237/0048H01J2237/2817
    • A system and method for characterizing and charging a sample. The system includes a vacuum chamber, a first apparatus in the vacuum chamber and configured to characterize a sample, and a second apparatus in the vacuum chamber and configured to charge the sample. The second apparatus includes an electron gun configured to provide an electron beam to the sample and including an emission cathode biased to a first voltage relative to a reference voltage, a sample holder configured to support the sample, and a mesh located between the electron gun and the sample holder. Additionally, the second apparatus includes a first voltage supply configured to bias the mesh to a second voltage relative to the sample holder, and a second voltage supply configured to bias the sample holder to a third voltage relative to the reference voltage.
    • 用于表征和充电样品的系统和方法。 该系统包括真空室,真空室中的第一装置,并且构造成表征样品;以及第二装置,其被配置成对样品充电。 第二装置包括电子枪,其构造成向样品提供电子束,并且包括相对于参考电压偏置到第一电压的发射阴极,被配置为支撑样品的样品保持器,以及位于电子枪和 样品架。 另外,第二装置包括配置成相对于样品架保持器将网状物偏压到第二电压的第一电压源,以及配置为将样品架保持器相对于参考电压偏置到第三电压的第二电压源。
    • 16. 发明申请
    • System and method for sample charge control
    • 样品充电控制系统和方法
    • US20060038126A1
    • 2006-02-23
    • US11203674
    • 2005-08-12
    • Zhong-Wei Chen
    • Zhong-Wei Chen
    • G21K7/00
    • H01J37/026G01R31/307H01J2237/0044H01J2237/0048H01J2237/2817
    • A system and method for characterizing and charging a sample. The system includes a vacuum chamber, a first apparatus in the vacuum chamber and configured to characterize a sample, and a second apparatus in the vacuum chamber and configured to charge the sample. The second apparatus includes an electron gun configured to provide an electron beam to the sample and including an emission cathode biased to a first voltage relative to a reference voltage, a sample holder configured to support the sample, and a mesh located between the electron gun and the sample holder. Additionally, the second apparatus includes a first voltage supply configured to bias the mesh to a second voltage relative to the sample holder, and a second voltage supply configured to bias the sample holder to a third voltage relative to the reference voltage.
    • 用于表征和充电样品的系统和方法。 该系统包括真空室,真空室中的第一装置,并且构造成表征样品;以及第二装置,其被配置成对样品充电。 第二装置包括电子枪,其构造成向样品提供电子束,并且包括相对于参考电压偏置到第一电压的发射阴极,被配置为支撑样品的样品保持器,以及位于电子枪和 样品架。 另外,第二装置包括配置成相对于样品架保持器将网状物偏压到第二电压的第一电压源,以及配置为将样品架保持器相对于参考电压偏置到第三电压的第二电压源。
    • 17. 发明授权
    • Inspecting optical masks with electron beam microscopy
    • 用电子束显微镜检查光学掩模
    • US5717204A
    • 1998-02-10
    • US606854
    • 1996-02-26
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. Jau
    • Dan MeisburgerAlan D. BrodieZhong-Wei ChenJack Y. Jau
    • H01J37/28H01J37/30H01J37/26
    • H01J37/28H01J37/3005H01J2237/2817
    • An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.
    • 一种装置通过光学相移掩模扫描电子束,并自动检查掩模以确定相移掩模的特征和缺陷的分类。 电子束指向掩模的表面以扫描该掩模,并且提供检测器以从掩模的表面测量次级和背散射带电粒子。 掩模安装在x-y平台上,以在掩模被电子束扫描时提供至少一个自由度。 通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征,可以检测掩模的各种物理特征以及它们的尺寸和位置。 也可以确定铬层的厚度。 在检查配置中,还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。