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11. 发明授权

US09548387B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09548387B2
公开(公告)日：2017-01-17
申请号：US13812941
申请日：2012-08-27
申请人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L27/088 , H01L29/78 , H01L21/8234 , H01L21/8238 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823431 , H01L21/823807 , H01L21/823821 , H01L27/0886 , H01L29/66818 , H01L29/7845 , H01L29/785
摘要： The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.
摘要翻译：本发明公开了一种半导体器件，包括位于基片上并沿着第一方向延伸的多个翅片; 多个栅极堆叠结构，沿着第二方向延伸并穿过每个所述散热片; 多个应力层，其位于所述栅极叠层结构的两侧的所述鳍片中，并且在其中具有多个源极和漏极区域; 多个通道区域，位于所述栅极叠层结构下方的鳍中; 其特征在于，应力层在翅片中具有连接部分，并且通道区域包围连接部分。

12. 发明申请

US20140048765A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140048765A1
公开(公告)日：2014-02-20
申请号：US13812500
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
发明人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/78 , H01L21/26506 , H01L29/0895 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/456 , H01L29/66356 , H01L29/66477 , H01L29/66659 , H01L29/7391 , H01L29/7835 , H01L29/7848
摘要： The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that the source region in the source and drain regions comprises GeSn alloy, and a tunnel dielectric layer is optionally comprised between the GeSn alloy of the source region and the channel region. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn alloy having a narrow band gap is formed by implanting precursors and performing a laser rapid annealing, the on-state current of TFET is effectively enhanced, accordingly it has an important application prospect in a high performance low power consumption application.
摘要翻译：本发明公开了一种半导体器件，包括：衬底，衬底上的栅极堆叠结构，栅极堆叠结构两侧的衬底中的源极和漏极区域以及衬底中的源极和漏极区域之间的沟道区域其特征在于源极和漏极区中的源极区包括GeSn合金，并且隧道电介质层任选地包含在源极区的GeSn合金和沟道区之间。根据本发明的半导体器件及其制造方法，通过注入前体并进行激光快速退火来形成具有窄带隙的GeSn合金，有效地提高了TFET的通态电流，因此具有在高性能低功耗应用中的重要应用前景。

13. 发明授权

US09312187B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09312187B2
公开(公告)日：2016-04-12
申请号：US13520791
申请日：2012-04-11
申请人： Huaxiang Yin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L21/8238 , H01L29/78
CPC分类号： H01L21/823807 , H01L29/7833 , H01L29/7843
摘要： The present invention discloses a semiconductor device, comprising a first MOSFET; a second MOSFET; a first stress liner covering the first MOSFET and having a first stress; a second stress liner covering the second MOSFET and having a second stress; wherein the second stress liner and/or the first stress liner comprise(s) a metal oxide. In accordance with the high-stress CMOS and method of manufacturing the same of the present invention, a stress layer comprising a metal oxide is formed selectively on PMOS and NMOS respectively by using a CMOS compatible process, whereby carrier mobility of the channel region is effectively enhanced and the performance of the device is improved.
摘要翻译：本发明公开了一种半导体器件，包括第一MOSFET; 第二个MOSFET; 覆盖所述第一MOSFET并具有第一应力的第一应力衬垫; 覆盖所述第二MOSFET并具有第二应力的第二应力衬垫; 其中所述第二应力衬垫和/或所述第一应力衬垫包括金属氧化物。根据本发明的高应力CMOS及其制造方法，通过使用CMOS兼容工艺，分别在PMOS和NMOS上选择性地形成包含金属氧化物的应力层，由此，沟道区域的载流子迁移率有效地增强了设备的性能，提高了设备性能。

14. 发明申请

US20150179797A1 Semiconductor Structure and Method for Manufacturing the Same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20150179797A1
公开(公告)日：2015-06-25
申请号：US14355664
申请日：2012-07-03
申请人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Changliang Qin , Xiaolong Ma , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L29/78 , H01L29/10 , H01L29/66
CPC分类号： H01L29/7848 , H01L29/1037 , H01L29/1095 , H01L29/66636 , H01L29/7834
摘要： The present invention discloses a semiconductor device, which comprises a substrate, a gate stack structure on the substrate, a channel region in the substrate under the gate stack structure, and source and drain regions at both sides of the channel region, wherein there is a stressed layer under and at both sides of the channel region, in which the source and drain regions are formed. According to the semiconductor device and the method for manufacturing the same of the present invention, a stressed layer is formed at both sides of and under the channel region made of a silicon-based material so as to act on the channel region, thereby effectively increasing the carrier mobility of the channel region and improving the device performance.
摘要翻译：本发明公开了一种半导体器件，其包括衬底，衬底上的栅极堆叠结构，栅极堆叠结构下的衬底中的沟道区，以及沟道区两侧的源极和漏极区，其中存在在形成源极和漏极区的沟道区的下侧和两侧具有应力层。根据本发明的半导体器件及其制造方法，在由硅系材料制成的沟道区域的两侧和下方形成应力层，以作用于沟道区域，从而有效地增加通道区域的载波移动性和设备性能的提高。

15. 发明申请

US20150115374A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20150115374A1
公开(公告)日：2015-04-30
申请号：US14387143
申请日：2012-04-26
申请人： Huaxiang Yin , Xiaolong Ma , Changliang Qi , Qiuxia Xu , Dapeng Chen
发明人： Huaxiang Yin , Xiaolong Ma , Changliang Qi , Qiuxia Xu , Dapeng Chen
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/66575 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66636 , H01L29/7833
摘要： The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure.
摘要翻译：本发明提供一种包括基板的半导体结构; 衬底上的栅极堆叠; 在栅极堆叠的侧壁上的间隔物; 通过外延生长形成在栅极堆叠的两侧的衬底中的源极/漏极结延伸; 以及在源极/漏极结延伸部的两侧上的衬底中的源极/漏极区域。因此，本发明还提供了制造半导体结构的方法。本发明可以提供具有高掺杂浓度和低结深度的源极/漏极结延伸，从而有效地改善了半导体结构的性能。

16. 发明授权

US08912070B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08912070B2
公开(公告)日：2014-12-16
申请号：US13812500
申请日：2012-10-12
申请人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
发明人： Xiaolong Ma , Huaxiang Yin , Zuozhen Fu
IPC分类号： H01L27/108
CPC分类号： H01L29/78 , H01L21/26506 , H01L29/0895 , H01L29/161 , H01L29/165 , H01L29/41783 , H01L29/456 , H01L29/66356 , H01L29/66477 , H01L29/66659 , H01L29/7391 , H01L29/7835 , H01L29/7848
摘要： The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a gate stack structure on a substrate; forming a drain region in the substrate on one side of the gate stack structure; and forming a source region made of GeSn in the substrate on the other side of the gate stack structure; wherein the forming the source region made of GeSn comprises: implanting precursors in the substrate on the other side of the gate stack structure; and performing a laser rapid annealing such that the precursors react to produce GeSn alloy, thereby to constitute a source region; and wherein the step of implanting precursors further comprises: performing a pre-amorphization ion implantation, so as to form an amorphized region in the substrate; and implanting Sn in the amorphized region.
摘要翻译：本发明公开了一种制造半导体器件的方法，包括：在衬底上形成栅叠层结构; 在所述栅极堆叠结构的一侧上的所述衬底中形成漏区; 以及在所述栅堆叠结构的另一侧的所述衬底中形成由GeSn制成的源区; 其中形成由GeSn制成的源极区域包括：在所述栅极堆叠结构的另一侧上的衬底中注入前体; 并进行激光快速退火，使得前体反应生成GeSn合金，从而构成源极区; 并且其中植入前体的步骤还包括：进行前非晶化离子注入，以在所述基底中形成非晶化区域; 并将Sn注入到非晶化区域中。

17. 发明申请

US20130329151A1 LIQUID CRYSTAL PANEL, MANUFACTURING PROCESS AND DISPLAY DEVICE THEREOF 审中-公开
标题翻译：液晶面板，制造工艺及其显示装置
公开(公告)号：US20130329151A1
公开(公告)日：2013-12-12
申请号：US13636652
申请日：2012-06-28
申请人： Xiaolong Ma , Hong-Ji Huang
发明人： Xiaolong Ma , Hong-Ji Huang
IPC分类号： G02F1/1337 , G02F1/136 , H01J9/00
CPC分类号： G02F1/133711 , G02F1/134363 , G02F2001/133742 , G02F2001/13706
摘要： The present invention provides to a liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first and second alignment films, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal film comprises positive liquid crystal molecules and reactive mesogens (RMs). The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the IPS mode. In comparison with the PSVA mode, the present invention can simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.
摘要翻译：本发明提供一种液晶面板，其包括：第一基板，第二基板，共面透明电极层和液晶层。第一和第二基板分别具有第一和第二取向膜。共面透明电极层设置在第二取向膜上。液晶层设置在第一基板的第一取向膜和第二基板的共面透明电极层之间的空间中。液晶膜包含正极性液晶分子和反应性介晶（RMs）。本发明的液晶面板可以克服在IPS模式下由摩擦对准产生的污染和静电的问题。与PSVA模式相比，本发明可以简化制造工艺，并提供高对比度，高响应速度和宽视角的优点。

18. 发明申请

US20130314656A1 Liquid Crystal Panel And Method Of Liquid Crystal Alignment 审中-公开
标题翻译：液晶面板及液晶对准方法
公开(公告)号：US20130314656A1
公开(公告)日：2013-11-28
申请号：US13521738
申请日：2012-05-30
申请人： Xiaolong Ma , Hong-Ji Huang
发明人： Xiaolong Ma , Hong-Ji Huang
IPC分类号： G02F1/1337
CPC分类号： G02F1/133788 , G02F1/133711 , G02F2001/133715 , G02F2001/133749
摘要： The present invention provides a method of liquid crystal (LC) alignment and LC panel, which includes: providing first substrate, forming first alignment film on surface of first substrate; providing second substrate, disposed oppositely to first substrate, and forming common electrodes, pixel electrodes disposed with separating space, and second alignment film covering common electrodes and pixel electrodes on surface of second substrate; filling LC composite between first alignment film and second alignment film, LC composite comprising reactive monomers and LC molecules; applying high frequency alternating electric field to common electrodes and pixel electrodes so that reactive monomers and LC molecules arranged perpendicular to high frequency alternating electric field with pretilt angle; continuing applying high frequency alternating electric field and using UV radiation to fix pretilt angle to perform alignment. The present invention does not use rubbing to perform alignment, and avoids pollution to LC panel.
摘要翻译：本发明提供一种液晶（LC）取向和LC面板的方法，包括：提供第一衬底，在第一衬底的表面上形成第一取向膜; 提供与第一衬底相对设置的第二衬底，以及形成公共电极，设置有分隔空间的像素电极，以及覆盖第二衬底表面上的公共电极和像素电极的第二取向膜; 在第一取向膜和第二取向膜之间填充LC复合物，包含反应性单体和LC分子的LC复合物; 将高频交变电场施加到公共电极和像素电极，使反应性单体和LC分子垂直于具有预倾角的高频交变电场排列; 继续施加高频交变电场并使用紫外线辐射来固定预倾角以进行对准。本发明不使用摩擦进行取向，避免了对LC面板的污染。

19. 发明授权

US09115308B2 Liquid crystal medium composition of liquid crystal display 有权
标题翻译：液晶介质组成液晶显示
公开(公告)号：US09115308B2
公开(公告)日：2015-08-25
申请号：US13698029
申请日：2012-08-03
申请人： Xinhui Zhong , Hongji Huang , Kuancheng Lee , Xiaolong Ma
发明人： Xinhui Zhong , Hongji Huang , Kuancheng Lee , Xiaolong Ma
IPC分类号： C09K19/54 , C09K19/30 , C09K19/12 , C09K19/06 , C09K19/32 , C09K19/04
CPC分类号： C09K19/54 , C09K19/062 , C09K19/322 , C09K2019/0448 , C09K2019/122 , C09K2019/3009
摘要： A liquid crystal medium composition of liquid crystal display includes: a negative liquid crystal material, reactive monomer, an initiator, and a stabilizer. The initiator functions to induce photo polymerization of the reactive monomer. The initiator has a molecular structure comprising aromatic rings, carbonyl groups connected to the aromatic rings, and substituted moieties connected to the aromatic rings. The initiator lowers the activation energy of chain initiation reaction of the polymerization of reactive monomer to allow the photo polymerization of the reactive monomer to take place in a wider wavelength range of 200-450 nm, so as to reduce the required intensity and luminance of ultraviolet light and to speed up the reaction of the reactive monomers and also to provide a uniform result of reaction, to reduce the destruction that the ultraviolet light causes on the material of alignment layer and the liquid crystal material, and to improve stability of the panel.
摘要翻译：液晶显示器的液晶介质组合物包括负极性液晶材料，反应性单体，引发剂和稳定剂。引发剂用于引发反应性单体的光聚合。引发剂具有包含芳族环，与芳环连接的羰基和与芳环连接的取代部分的分子结构。引发剂降低反应性单体聚合引发反应的活化能，使反应性单体的光聚合在较宽的波长范围内发生，从而降低紫外线的强度和亮度并且加速反应性单体的反应，并且还提供均匀的反应结果，以减少紫外光对取向层和液晶材料的材料的破坏，并提高面板的稳定性。

20. 发明申请

US20130335659A1 IN-PLANE-SWITCHING MODE LIQUID CRYSTAL PANEL, MANUFACTURING PROCESS AND DISPLAY DEVICE THEREOF 有权
标题翻译：平面切换模式液晶板，制造工艺及其显示装置
公开(公告)号：US20130335659A1
公开(公告)日：2013-12-19
申请号：US13638078
申请日：2012-06-28
申请人： Xiaolong Ma , Hong-Ji Huang
发明人： Xiaolong Ma , Hong-Ji Huang
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/1333 , G02F1/133711 , G02F2001/133726 , G02F2001/133765
摘要： The present invention provides to an in-plane-switching (IPS) mode liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first alignment film and a second alignment film, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal layer comprises dual-frequency liquid crystal molecules and dual-frequency reactive mesogens/monomers. The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the in-plane-switching (IPS) mode, so as to simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.
摘要翻译：本发明提供一种面内切换（IPS）模式液晶面板，其包括：第一基板，第二基板，共面透明电极层和液晶层。第一基板和第二基板分别具有第一取向膜和第二取向膜。共面透明电极层设置在第二取向膜上。液晶层设置在第一基板的第一取向膜和第二基板的共面透明电极层之间的空间中。液晶层包括双频液晶分子和双频反应性介晶/单体。本发明的液晶面板可以克服在平面切换（IPS）模式中由摩擦取向产生的污染和静电的问题，从而简化制造过程，并提供高对比度，高响应速度和广视角。

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