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11. 发明授权

US08320168B2 Phase change random access memory device and related methods of operation 有权
标题翻译：相变随机存取存储器件及相关操作方法
公开(公告)号：US08320168B2
公开(公告)日：2012-11-27
申请号：US13108143
申请日：2011-05-16
申请人： Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
发明人： Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0092
摘要： A method of operating a phase change random access memory (PRAM) device includes performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.
摘要翻译：操作相变随机存取存储器（PRAM）装置的方法包括执行程序操作以将数据存储在所述装置的所选PRAM单元中，其中所述程序操作包括多个顺序程序循环。该方法还包括在编程操作的中间暂停编程操作，并且在暂停编程操作之后，响应于恢复命令恢复程序操作。

12. 发明申请

US20080084736A1 Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same 有权
标题翻译：多端口相变随机存取存储单元和多端口相变随机存取存储器件包括相同
公开(公告)号：US20080084736A1
公开(公告)日：2008-04-10
申请号：US11902704
申请日：2007-09-25
申请人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
发明人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
IPC分类号： G11C11/00
CPC分类号： G11C8/16 , G11C13/0004 , G11C2213/74 , G11C2213/79
摘要： A multi-port phase change random access memory (PRAM) cell, includes a PRAM element including a phase change material, a writing controller configured to operate in correspondence with a writing word line, the writing controller connecting a writing bit line to the PRAM element, and a reading controller configured to operate in correspondence with a reading word line, the reading controller connecting the PRAM element to a reading bit line.
摘要翻译：多端口相变随机存取存储器（PRAM）单元包括：包括相变材料的PRAM元件，配置成与写入字线对应地进行操作的写入控制器，写入控制器将写入位线连接到PRAM元件以及读取控制器，被配置为与读取字线对应地操作，读取控制器将PRAM元件连接到读取位线。

13. 发明授权

US07978490B2 Content addressable memory cell and content addressable memory using phase change memory 失效
标题翻译：内容可寻址存储单元和内容可寻址存储器，使用相变存储器
公开(公告)号：US07978490B2
公开(公告)日：2011-07-12
申请号：US11892851
申请日：2007-08-28
申请人： Kwang-jin Lee , Du-eung Kim
发明人： Kwang-jin Lee , Du-eung Kim
IPC分类号： G11C15/00
CPC分类号： G11C15/046 , G11C13/0004
摘要： According to an example embodiment, a CAM cell included in a CAM may include a phase change memory device, a connector, and/or a developer. The phase change memory device may be configured to store data. The phase change memory device may have a resistance that may be varied according to the logic level of the stored data. The connector may be configured to control writing data to the phase change memory device and reading data from the phase change memory device. The developer may be configured to control reading data from the phase change memory device in a search mode in which the data stored in the phase change memory device is compared to the search data.
摘要翻译：根据示例实施例，CAM中包括的CAM单元可以包括相变存储器件，连接器和/或显影器。相变存储器件可以被配置为存储数据。相变存储器件可以具有可以根据存储的数据的逻辑电平而改变的电阻。连接器可以被配置为控制向相变存储器件写入数据并从相变存储器件读取数据。开发者可以被配置为在存储在相变存储器件中的数据与搜索数据进行比较的搜索模式中控制从相变存储器件读取数据。

14. 发明授权

US07668006B2 Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same 有权
标题翻译：多端口相变随机存取存储单元和多端口相变随机存取存储器件包括相同
公开(公告)号：US07668006B2
公开(公告)日：2010-02-23
申请号：US11902704
申请日：2007-09-25
申请人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
发明人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
IPC分类号： G11C11/00
CPC分类号： G11C8/16 , G11C13/0004 , G11C2213/74 , G11C2213/79
摘要： A multi-port phase change random access memory (PRAM) cell, includes a PRAM element including a phase change material, a writing controller configured to operate in correspondence with a writing word line, the writing controller connecting a writing bit line to the PRAM element, and a reading controller configured to operate in correspondence with a reading word line, the reading controller connecting the PRAM element to a reading bit line.
摘要翻译：多端口相变随机存取存储器（PRAM）单元包括：包括相变材料的PRAM元件，配置成与写入字线对应地进行操作的写入控制器，写入控制器将写入位线连接到PRAM元件以及读取控制器，被配置为与读取字线对应地操作，读取控制器将PRAM元件连接到读取位线。

15. 发明授权

US07352616B2 Phase change random access memory, boosting charge pump and method of generating write driving voltage 有权
标题翻译：相变随机存取存储器，升压电荷泵和产生写驱动电压的方法
公开(公告)号：US07352616B2
公开(公告)日：2008-04-01
申请号：US11319602
申请日：2005-12-29
申请人： Sang-beom Kang , Du-eung Kim , Hyung-rok Oh , Kwang-jin Lee
发明人： Sang-beom Kang , Du-eung Kim , Hyung-rok Oh , Kwang-jin Lee
IPC分类号： G11C11/00
CPC分类号： G11C5/145 , G11C8/08 , G11C11/5678 , G11C13/0004 , G11C13/0028 , G11C13/0038 , G11C13/0069 , G11C2013/009
摘要： A phase change random access memory on aspect includes a memory cell array block including a plurality of phase change memory cells, a column decoder, a row decoder, a column selector, and a write driver. The memory further includes a write boosting unit having a plurality of internal charge pumps which boost a first voltage to generate a write driving voltage which drives the write driver, where the number of internal charge pumps that are activated during a write operation is varied according to a number of phase change memory cells which are selected during the write operation. The memory still further includes a column boosting unit which boosts the first voltage to generate a column driving voltage which drives the column decoder, and a row boosting unit which boosts the first voltage to generate a row driving voltage which drives the row decoder.
摘要翻译：一方面的相变随机存取存储器包括包括多个相变存储器单元，列解码器，行解码器，列选择器和写驱动器的存储单元阵列块。存储器还包括具有多个内部电荷泵的写入升压单元，该多个内部电荷泵升压第一电压以产生驱动写入驱动器的写入驱动电压，其中在写入操作期间被激活的内部电荷泵的数量根据在写入操作期间选择的多个相变存储器单元。存储器还包括列升压单元，其升高第一电压以产生驱动列解码器的列驱动电压;以及行升压单元，其升高第一电压以产生驱动行解码器的行驱动电压。

16. 发明申请

US20070097741A1 Phase change random access memory, boosting charge pump and method of generating write driving voltage 有权
标题翻译：相变随机存取存储器，升压电荷泵和产生写驱动电压的方法
公开(公告)号：US20070097741A1
公开(公告)日：2007-05-03
申请号：US11319602
申请日：2005-12-29
申请人： Sang-beom Kang , Du-eung Kim , Hyung-rok Oh , Kwang-jin Lee
发明人： Sang-beom Kang , Du-eung Kim , Hyung-rok Oh , Kwang-jin Lee
IPC分类号： G11C11/00
CPC分类号： G11C5/145 , G11C8/08 , G11C11/5678 , G11C13/0004 , G11C13/0028 , G11C13/0038 , G11C13/0069 , G11C2013/009
摘要： A phase change random access memory on aspect includes a memory cell array block including a plurality of phase change memory cells, a column decoder, a row decoder, a column selector, and a write driver. The memory further includes a write boosting unit having a plurality of internal charge pumps which boost a first voltage to generate a write driving voltage which drives the write driver, where the number of internal charge pumps that are activated during a write operation is varied according to a number of phase change memory cells which are selected during the write operation. The memory still further includes a column boosting unit which boosts the first voltage to generate a column driving voltage which drives the column decoder, and a row boosting unit which boosts the first voltage to generate a row driving voltage which drives the row decoder.
摘要翻译：一方面的相变随机存取存储器包括包括多个相变存储器单元，列解码器，行解码器，列选择器和写驱动器的存储单元阵列块。存储器还包括具有多个内部电荷泵的写入升压单元，该多个内部电荷泵升压第一电压以产生驱动写入驱动器的写入驱动电压，其中在写入操作期间被激活的内部电荷泵的数量根据在写入操作期间选择的多个相变存储器单元。存储器还包括列升压单元，其升高第一电压以产生驱动列解码器的列驱动电压;以及行升压单元，其升高第一电压以产生驱动行解码器的行驱动电压。

17. 发明授权

US08190851B2 Resistance variable memory device 有权
标题翻译：电阻变量存储器件
公开(公告)号：US08190851B2
公开(公告)日：2012-05-29
申请号：US12617758
申请日：2009-11-13
申请人： Kwang-jin Lee , Young-kug Moon , Kwang-ho Kim
发明人： Kwang-jin Lee , Young-kug Moon , Kwang-ho Kim
IPC分类号： G06F12/00
CPC分类号： G06F12/0215 , G06F12/0238 , G06F2212/7203 , G11C7/103 , G11C13/0004 , G11C13/004 , Y02D10/13
摘要： A resistance variable memory device includes a resistance variable memory cell array, a data register that prefetches read data of the resistance variable memory cell array, a data output unit that receives the prefetched read data from the data register and outputs the received data, and a page mode setting unit that sets one of a first page mode and a second page mode as a page mode. In the first page mode, the data output unit sequentially reads the read data prefetched in the data register as page addresses are sequentially received, and in the second page mode, the data output unit sequentially reads the read data prefetched in the data register after a start page address among a plurality of page addresses has been received.
摘要翻译：电阻可变存储器件包括电阻可变存储单元阵列，预取电阻可变存储单元阵列的读取数据的数据寄存器，从数据寄存器接收预取的读取数据并输出接收的数据的数据输出单元，以及页面模式设置单元，其将第一页面模式和第二页面模式之一设置为页面模式。在第一页面模式中，数据输出单元顺序地读取在数据寄存器中预取的读取数据，因为顺序地接收页面地址，而在第二页面模式中，数据输出单元顺序地读取在数据寄存器中预读取的读取数据已经接收到多个页地址中的起始页地址。

18. 发明授权

US08250289B2 Phase-change random access memory and method of setting boot block therein 有权
标题翻译：相变随机存取存储器及其中设置引导块的方法
公开(公告)号：US08250289B2
公开(公告)日：2012-08-21
申请号：US12402006
申请日：2009-03-11
申请人： Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
发明人： Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0238 , G06F12/0223 , Y02D10/13
摘要： A semiconductor memory device includes a memory cell array and the memory cell array includes: a plurality of memory blocks and at least one setting unit. The at least one setting unit stores a location and a size of a boot data storage region within the plurality of memory blocks that stores boot data. The at least one setting units may include a register for setting usage of each memory block as a boot block. The semiconductor device may be a phase-change memory.
摘要翻译：半导体存储器件包括存储单元阵列，存储单元阵列包括：多个存储块和至少一个设置单元。所述至少一个设置单元将存储引导数据的多个存储块内的引导数据存储区域的位置和大小存储起来。至少一个设置单元可以包括用于将每个存储器块的使用设置为引导块的寄存器。半导体器件可以是相变存储器。

19. 发明申请

US20080112220A1 Input circuit of a non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件的输入电路
公开(公告)号：US20080112220A1
公开(公告)日：2008-05-15
申请号：US11984145
申请日：2007-11-14
申请人： Kwang-jin Lee , Won-Seok Lee , Qi Wang , Hye-Jin Kim , Joon Yong Choi
发明人： Kwang-jin Lee , Won-Seok Lee , Qi Wang , Hye-Jin Kim , Joon Yong Choi
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C7/1078 , G11C7/1084 , G11C7/225 , G11C16/10
摘要： A non-volatile semiconductor memory device may include a memory cell array that may include a plurality of memory transistors; a input circuit that may control a voltage level of an internal reference voltage and a delay time of an internal clock signal in response to an MRS trim code or an electric fuse trim code, and that may generate a first buffered input signal; a column gate that may gate the first buffered input signal in response to a decoded column address signal; and a sense amplifier that may amplify an output signal of the memory cell array to output to the column gate, and that may receive an output signal of the column gate to output to the memory cell array. The non-volatile semiconductor memory device may properly buffer an input signal of a small swing range.
摘要翻译：非易失性半导体存储器件可以包括可以包括多个存储晶体管的存储单元阵列; 输入电路，其可以响应于MRS修剪代码或电熔丝修剪代码来控制内部参考电压的电压电平和内部时钟信号的延迟时间，并且可以产生第一缓冲输入信号; 列门，其可以响应于解码列地址信号而选通第一缓冲输入信号; 以及读出放大器，其可以放大存储单元阵列的输出信号以输出到列门，并且可以接收列门的输出信号以输出到存储器单元阵列。非易失性半导体存储器件可以适当地缓冲小摆动范围的输入信号。

20. 发明授权

US08013063B2 Acryl-silicone hybrid impact modifiers and vinyl chloride resin compositions having the same 有权
标题翻译：丙烯酸酯 - 硅氧烷混合抗冲改性剂和具有该丙烯酸树脂的氯乙烯树脂组合物
公开(公告)号：US08013063B2
公开(公告)日：2011-09-06
申请号：US10567000
申请日：2004-05-13
申请人： Kwang-jin Lee , Jeong-heon Ahn , Hye-kyong Lee
发明人： Kwang-jin Lee , Jeong-heon Ahn , Hye-kyong Lee
IPC分类号： C08F30/08 , C08F30/00
CPC分类号： C08F265/00 , C08F265/04 , C08F265/06 , C08F265/10 , C08F285/00 , C08F291/00 , C08G77/442 , C08L27/06 , C08L51/00 , C08L51/003 , Y10S525/902 , C08F2/22 , C08L2666/24 , C08L2666/02
摘要： The present invention relates to acryl-silicone hybrid impact modifiers, the method of their manufacture, and vinyl chloride resin compositions containing the above. The acryl-silicone hybrid impact modifier of the present invention contains a seed obtained through emulsion copolymerization of vinyl monomers and hydrophilic monomers; an acryl-silicone hybrid rubber core covering the seed in which a polyorganosiloxane rubber phase is dispersed locally onto the inner part and surface of the acrylic rubber core containing alkyl acrylate polymers and a shell covering the above rubber core and containing alkyl methacrylate polymers. Thermoplastic resins containing the above, particularly by being added to vinyl chloride resins, they have effects of granting superior impact resistance, weatherability, and high gloss.
摘要翻译：本发明涉及丙烯酸 - 硅氧烷混合抗冲改性剂，其制造方法和含有上述的氯乙烯树脂组合物。本发明的丙烯酸 - 硅氧烷杂化抗冲改性剂含有通过乙烯基单体和亲水性单体的乳液共聚获得的种子; 覆盖种子的丙烯酸 - 硅氧烷混合橡胶芯，其中聚有机硅氧烷橡胶相局部分散在丙烯酸酯橡胶芯的内部和表面上，该丙烯酸橡胶芯含有丙烯酸烷基酯聚合物和覆盖上述橡胶芯并且含有甲基丙烯酸烷基酯聚合物的壳。含有上述的热塑性树脂，特别是通过加入到氯乙烯树脂中，它们具有赋予优异的耐冲击性，耐候性和高光泽度的效果。

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